WO2005059618A3 - Microlithography projection objective with crystal lens - Google Patents
Microlithography projection objective with crystal lens Download PDFInfo
- Publication number
- WO2005059618A3 WO2005059618A3 PCT/EP2004/014290 EP2004014290W WO2005059618A3 WO 2005059618 A3 WO2005059618 A3 WO 2005059618A3 EP 2004014290 W EP2004014290 W EP 2004014290W WO 2005059618 A3 WO2005059618 A3 WO 2005059618A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- microlithography projection
- crystal lens
- projection objective
- crystalline
- lenses
- Prior art date
Links
- 238000001393 microlithography Methods 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 title 1
- 210000000695 crystalline len Anatomy 0.000 abstract 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 2
- 238000007654 immersion Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000011780 sodium chloride Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/596,626 US7755839B2 (en) | 2003-12-19 | 2004-12-15 | Microlithography projection objective with crystal lens |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53062303P | 2003-12-19 | 2003-12-19 | |
US60/530,623 | 2003-12-19 | ||
US56800604P | 2004-05-04 | 2004-05-04 | |
US60/568,006 | 2004-05-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005059618A2 WO2005059618A2 (en) | 2005-06-30 |
WO2005059618A3 true WO2005059618A3 (en) | 2006-01-19 |
Family
ID=34704297
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/014100 WO2005059645A2 (en) | 2003-12-19 | 2004-12-10 | Microlithography projection objective with crystal elements |
PCT/EP2004/014290 WO2005059618A2 (en) | 2003-12-19 | 2004-12-15 | Microlithography projection objective with crystal lens |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/014100 WO2005059645A2 (en) | 2003-12-19 | 2004-12-10 | Microlithography projection objective with crystal elements |
Country Status (3)
Country | Link |
---|---|
US (1) | US7755839B2 (en) |
JP (1) | JP5102492B2 (en) |
WO (2) | WO2005059645A2 (en) |
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US7972438B2 (en) * | 2006-08-30 | 2011-07-05 | Crystal Photonics, Incorporated | High-index UV optical materials for immersion lithography |
JP5029611B2 (en) | 2006-09-08 | 2012-09-19 | 株式会社ニコン | Cleaning member, cleaning method, exposure apparatus, and device manufacturing method |
KR101422298B1 (en) | 2006-09-08 | 2014-08-13 | 가부시키가이샤 니콘 | Mask, exposure apparatus and device manufacturing method |
US7872730B2 (en) | 2006-09-15 | 2011-01-18 | Nikon Corporation | Immersion exposure apparatus and immersion exposure method, and device manufacturing method |
US7557997B2 (en) | 2006-09-28 | 2009-07-07 | Nikon Corporation | Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element |
KR101419196B1 (en) | 2006-09-29 | 2014-07-15 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device manufacturing method |
US8023104B2 (en) | 2007-01-22 | 2011-09-20 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus |
US8004651B2 (en) | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
JP2008216498A (en) * | 2007-03-01 | 2008-09-18 | Canon Inc | Projection optical system, exposure apparatus, and device fabrication method |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US8134685B2 (en) | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
KR20100031694A (en) | 2007-05-28 | 2010-03-24 | 가부시키가이샤 니콘 | Exposure apparatus, device manufacturing method, cleaning device, cleaning method and exposure method |
DE102008001761A1 (en) | 2007-06-06 | 2008-12-11 | Carl Zeiss Smt Ag | Projection lens for microlithographic projection illumination system for forming mask on light sensitive layer, has two compensation units arranged on different position along optical axis, where refractive lens are provided between units |
US8194232B2 (en) | 2007-07-24 | 2012-06-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
US8264669B2 (en) | 2007-07-24 | 2012-09-11 | Nikon Corporation | Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head |
US8547527B2 (en) | 2007-07-24 | 2013-10-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method |
US8867022B2 (en) | 2007-08-24 | 2014-10-21 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method |
US9304412B2 (en) | 2007-08-24 | 2016-04-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method |
US8218129B2 (en) | 2007-08-24 | 2012-07-10 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system |
US8023106B2 (en) | 2007-08-24 | 2011-09-20 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
US8237919B2 (en) | 2007-08-24 | 2012-08-07 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads |
JP5498385B2 (en) * | 2007-10-02 | 2014-05-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Projection objective for microlithography |
US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US9013681B2 (en) | 2007-11-06 | 2015-04-21 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
CN101675500B (en) | 2007-11-07 | 2011-05-18 | 株式会社尼康 | Exposure apparatus, exposure method and device manufacturing method |
US9256140B2 (en) | 2007-11-07 | 2016-02-09 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction |
US8665455B2 (en) | 2007-11-08 | 2014-03-04 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US8422015B2 (en) | 2007-11-09 | 2013-04-16 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US8711327B2 (en) | 2007-12-14 | 2014-04-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
KR101497862B1 (en) | 2007-12-28 | 2015-03-04 | 가부시키가이샤 니콘 | Exposure apparatus, moving body driving system, pattern forming apparatus, exposure method and device manufacturing method |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
TWI434142B (en) * | 2008-07-25 | 2014-04-11 | Nanya Technology Corp | Lithography apparatus with a fiber module |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4861148A (en) * | 1986-03-12 | 1989-08-29 | Matsushita Electric Industrial Co., Inc. | Projection optical system for use in precise copy |
EP0475020A2 (en) * | 1990-08-28 | 1992-03-18 | International Business Machines Corporation | Field compensated lens |
US6025115A (en) * | 1990-09-26 | 2000-02-15 | Canon Kabushiki Kaisha | Processing method for etching a substrate |
US20020102497A1 (en) * | 1999-06-04 | 2002-08-01 | Sparrow Robert W. | Fluoride lens crystal for optical microlithography systems |
US20030174408A1 (en) * | 2002-03-08 | 2003-09-18 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
Family Cites Families (160)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2380887A (en) * | 1941-05-22 | 1945-07-31 | Taylor Taylor & Hobson Ltd | Optical system |
NL269391A (en) * | 1961-09-19 | |||
JPS6019484B2 (en) * | 1975-11-07 | 1985-05-16 | キヤノン株式会社 | Copying lens |
US4293186A (en) | 1977-02-11 | 1981-10-06 | The Perkin-Elmer Corporation | Restricted off-axis field optical system |
CH624776A5 (en) | 1977-12-08 | 1981-08-14 | Kern & Co Ag | |
US4241390A (en) | 1978-02-06 | 1980-12-23 | The Perkin-Elmer Corporation | System for illuminating an annular field |
CH651943A5 (en) * | 1980-08-16 | 1985-10-15 | Ludvik Dr Canzek | HIGH OPENING CATADIOPTRIC LENS. |
JPS5744115A (en) * | 1980-08-30 | 1982-03-12 | Asahi Optical Co Ltd | Reflex telephoto zoom lens system |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
GB2148017B (en) | 1981-05-15 | 1986-04-09 | Gen Signal Corp | Apparatus for projecting a series of images onto dies of a semiconductor wafer |
US4469414A (en) * | 1982-06-01 | 1984-09-04 | The Perkin-Elmer Corporation | Restrictive off-axis field optical system |
JPS60184223A (en) * | 1984-03-01 | 1985-09-19 | Nippon Kogaku Kk <Nikon> | Cata-dioptric telephoto lens |
US4812028A (en) * | 1984-07-23 | 1989-03-14 | Nikon Corporation | Reflection type reduction projection optical system |
US4834515A (en) * | 1984-11-29 | 1989-05-30 | Lockheed Missiles & Space Company, Inc. | Catadioptric imaging system with dioptric assembly of the petzval type |
US4779966A (en) | 1984-12-21 | 1988-10-25 | The Perkin-Elmer Corporation | Single mirror projection optical system |
JPS61156737A (en) * | 1984-12-27 | 1986-07-16 | Canon Inc | Catadioptric system |
US4711535A (en) | 1985-05-10 | 1987-12-08 | The Perkin-Elmer Corporation | Ring field projection system |
US4757354A (en) * | 1986-05-02 | 1988-07-12 | Matsushita Electrical Industrial Co., Ltd. | Projection optical system |
DE3752314T2 (en) | 1986-07-11 | 2000-09-14 | Canon Kk | Reduction type projection exposure system of the reflection type for X-ray radiation |
GB2197962A (en) | 1986-11-10 | 1988-06-02 | Compact Spindle Bearing Corp | Catoptric reduction imaging apparatus |
US4951078A (en) * | 1988-05-16 | 1990-08-21 | Minolta Camera Kabushiki Kaisha | Camera system including catadioptric lens and catadioptric lens system used therein |
US5004331A (en) * | 1989-05-03 | 1991-04-02 | Hughes Aircraft Company | Catadioptric projector, catadioptric projection system and process |
US5063586A (en) | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
US5114238A (en) * | 1990-06-28 | 1992-05-19 | Lockheed Missiles & Space Company, Inc. | Infrared catadioptric zoom relay telescope |
US5031976A (en) * | 1990-09-24 | 1991-07-16 | Kla Instruments, Corporation | Catadioptric imaging system |
GB9020902D0 (en) * | 1990-09-26 | 1990-11-07 | Optics & Vision Ltd | Optical systems,telescopes and binoculars |
US5315629A (en) * | 1990-10-10 | 1994-05-24 | At&T Bell Laboratories | Ringfield lithography |
US5734496A (en) * | 1991-06-03 | 1998-03-31 | Her Majesty The Queen In Right Of New Zealand | Lens system |
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
US5212588A (en) * | 1991-04-09 | 1993-05-18 | The United States Of America As Represented By The United States Department Of Energy | Reflective optical imaging system for extreme ultraviolet wavelengths |
JP3203719B2 (en) | 1991-12-26 | 2001-08-27 | 株式会社ニコン | Exposure apparatus, device manufactured by the exposure apparatus, exposure method, and device manufacturing method using the exposure method |
US5220590A (en) * | 1992-05-05 | 1993-06-15 | General Signal Corporation | X-ray projection lithography camera |
US5353322A (en) | 1992-05-05 | 1994-10-04 | Tropel Corporation | Lens system for X-ray projection lithography camera |
JPH06188169A (en) | 1992-08-24 | 1994-07-08 | Canon Inc | Method of image formation, exposure system, and manufacture of device |
US5477304A (en) | 1992-10-22 | 1995-12-19 | Nikon Corporation | Projection exposure apparatus |
US6078381A (en) * | 1993-02-01 | 2000-06-20 | Nikon Corporation | Exposure method and apparatus |
US5636066A (en) * | 1993-03-12 | 1997-06-03 | Nikon Corporation | Optical apparatus |
JP3635684B2 (en) * | 1994-08-23 | 2005-04-06 | 株式会社ニコン | Catadioptric reduction projection optical system, catadioptric optical system, and projection exposure method and apparatus |
US5410434A (en) * | 1993-09-09 | 1995-04-25 | Ultratech Stepper, Inc. | Reflective projection system comprising four spherical mirrors |
US5515207A (en) * | 1993-11-03 | 1996-05-07 | Nikon Precision Inc. | Multiple mirror catadioptric optical system |
DE59409276D1 (en) * | 1994-08-08 | 2000-05-11 | Micronas Intermetall Gmbh | Process for digital interpolation of signals |
US5488229A (en) * | 1994-10-04 | 1996-01-30 | Excimer Laser Systems, Inc. | Deep ultraviolet microlithography system |
JPH08166542A (en) | 1994-10-13 | 1996-06-25 | Nisshin Koki Kk | Catadioptric system and optical device using the same |
IL113350A (en) * | 1995-04-12 | 1998-06-15 | State Rafaelel Ministry Of Def | Catadioptric optics for staring array detector system |
JP3711586B2 (en) | 1995-06-02 | 2005-11-02 | 株式会社ニコン | Scanning exposure equipment |
US5650877A (en) * | 1995-08-14 | 1997-07-22 | Tropel Corporation | Imaging system for deep ultraviolet lithography |
US5805365A (en) * | 1995-10-12 | 1998-09-08 | Sandia Corporation | Ringfield lithographic camera |
JP3456323B2 (en) * | 1995-11-01 | 2003-10-14 | 株式会社ニコン | Microscope objective lens |
JPH09148241A (en) | 1995-11-27 | 1997-06-06 | Canon Inc | Scanning aligner and method for manufacturing device using the same |
US5815310A (en) * | 1995-12-12 | 1998-09-29 | Svg Lithography Systems, Inc. | High numerical aperture ring field optical reduction system |
JPH09251097A (en) * | 1996-03-15 | 1997-09-22 | Nikon Corp | Reflection reduction image-forming optical system for x-ray lithography |
US5686728A (en) | 1996-05-01 | 1997-11-11 | Lucent Technologies Inc | Projection lithography system and method using all-reflective optical elements |
US5729376A (en) * | 1996-07-01 | 1998-03-17 | The United States Of America As Represented By The Secretary Of The Army | Catadioptric multi-functional optical assembly |
US5999310A (en) | 1996-07-22 | 1999-12-07 | Shafer; David Ross | Ultra-broadband UV microscope imaging system with wide range zoom capability |
US5717518A (en) | 1996-07-22 | 1998-02-10 | Kla Instruments Corporation | Broad spectrum ultraviolet catadioptric imaging system |
DE19633128A1 (en) * | 1996-08-16 | 1998-02-19 | Zeiss Carl Fa | Achromatic lens system for ultraviolet rays with germanium dioxide glass |
US6631036B2 (en) * | 1996-09-26 | 2003-10-07 | Carl-Zeiss-Stiftung | Catadioptric objective |
US6169627B1 (en) * | 1996-09-26 | 2001-01-02 | Carl-Zeiss-Stiftung | Catadioptric microlithographic reduction objective |
JP4029183B2 (en) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | Projection exposure apparatus and projection exposure method |
CN1244021C (en) | 1996-11-28 | 2006-03-01 | 株式会社尼康 | Photoetching device and exposure method |
US7130129B2 (en) | 1996-12-21 | 2006-10-31 | Carl Zeiss Smt Ag | Reticle-masking objective with aspherical lenses |
KR100512450B1 (en) | 1996-12-24 | 2006-01-27 | 에이에스엠엘 네델란즈 비.브이. | Two-dimensionally stabilized positioning device with two object holders and lithographic device with such positioning device |
JPH10183099A (en) | 1996-12-27 | 1998-07-07 | Lion Corp | Low-foaming friction resistance-reducing agent for water-base medium and reduction of friction resistance of water-base medium with little foaming by using the same |
JPH10284408A (en) | 1997-04-08 | 1998-10-23 | Nikon Corp | Exposure method |
JP3747566B2 (en) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | Immersion exposure equipment |
US6291110B1 (en) * | 1997-06-27 | 2001-09-18 | Pixelligent Technologies Llc | Methods for transferring a two-dimensional programmable exposure pattern for photolithography |
US5956192A (en) * | 1997-09-18 | 1999-09-21 | Svg Lithography Systems, Inc. | Four mirror EUV projection optics |
US5920380A (en) * | 1997-12-19 | 1999-07-06 | Sandia Corporation | Apparatus and method for generating partially coherent illumination for photolithography |
JP4333035B2 (en) | 1998-03-06 | 2009-09-16 | 株式会社ニコン | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE APPARATUS |
US6097537A (en) * | 1998-04-07 | 2000-08-01 | Nikon Corporation | Catadioptric optical system |
JPH11316343A (en) * | 1998-05-01 | 1999-11-16 | Nikon Corp | Catadioptric lens |
DE19923609A1 (en) | 1998-05-30 | 1999-12-02 | Zeiss Carl Fa | Reduction objective useful in projector for deep ultraviolet microlithography in chip manufacture |
EP1293831A1 (en) * | 1998-06-08 | 2003-03-19 | Nikon Corporation | Projection exposure apparatus and method |
EP0989434B1 (en) * | 1998-07-29 | 2006-11-15 | Carl Zeiss SMT AG | Catadioptric optical system and exposure apparatus having the same |
US6213610B1 (en) * | 1998-09-21 | 2001-04-10 | Nikon Corporation | Catoptric reduction projection optical system and exposure apparatus and method using same |
JP2000100694A (en) * | 1998-09-22 | 2000-04-07 | Nikon Corp | Reflection/reduction projection optical system, projection aligner comprising it, and exposure method using the aligner |
US6220713B1 (en) * | 1998-10-23 | 2001-04-24 | Compaq Computer Corporation | Projection lens and system |
WO2000039623A1 (en) | 1998-12-25 | 2000-07-06 | Nikon Corporation | Reflection refraction image-forming optical system and projection exposure apparatus comprising the optical system |
EP1035445B1 (en) * | 1999-02-15 | 2007-01-31 | Carl Zeiss SMT AG | Microlithographic reduction objective and projection exposure apparatus |
US6033079A (en) * | 1999-03-15 | 2000-03-07 | Hudyma; Russell | High numerical aperture ring field projection system for extreme ultraviolet lithography |
US6188513B1 (en) * | 1999-03-15 | 2001-02-13 | Russell Hudyma | High numerical aperture ring field projection system for extreme ultraviolet lithography |
US6426506B1 (en) * | 1999-05-27 | 2002-07-30 | The Regents Of The University Of California | Compact multi-bounce projection system for extreme ultraviolet projection lithography |
US6867922B1 (en) | 1999-06-14 | 2005-03-15 | Canon Kabushiki Kaisha | Projection optical system and projection exposure apparatus using the same |
DE10029938A1 (en) * | 1999-07-09 | 2001-07-05 | Zeiss Carl | Optical system for projection exposure device, includes optical element which consists of magnesium fluoride, as main constituent |
JP4717974B2 (en) | 1999-07-13 | 2011-07-06 | 株式会社ニコン | Catadioptric optical system and projection exposure apparatus provided with the optical system |
US6495202B1 (en) * | 1999-09-08 | 2002-12-17 | Nikon Corporation | Method for manufacturing an optical element containing fluoride in at least its surface portions |
EP1093021A3 (en) * | 1999-10-15 | 2004-06-30 | Nikon Corporation | Projection optical system as well as equipment and methods making use of said system |
US6600608B1 (en) * | 1999-11-05 | 2003-07-29 | Carl-Zeiss-Stiftung | Catadioptric objective comprising two intermediate images |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
TW538256B (en) * | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
WO2002044786A2 (en) | 2000-11-28 | 2002-06-06 | Carl Zeiss Smt Ag | Catadioptric projection system for 157 nm lithography |
US6285737B1 (en) | 2000-01-21 | 2001-09-04 | Euv Llc | Condenser for extreme-UV lithography with discharge source |
JP2001228401A (en) * | 2000-02-16 | 2001-08-24 | Canon Inc | Projection optical system, projection aligner by this projection optical system and method for manufacturing device |
DE10010131A1 (en) * | 2000-03-03 | 2001-09-06 | Zeiss Carl | Microlithography projection exposure with tangential polarization involves using light with preferred direction of polarization oriented perpendicularly with respect to plane of incidence |
US7301605B2 (en) * | 2000-03-03 | 2007-11-27 | Nikon Corporation | Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices |
JP2001343589A (en) | 2000-03-31 | 2001-12-14 | Canon Inc | Projection optical system, projection exposure device by the same, manufacturing method of devices |
JP2002083766A (en) * | 2000-06-19 | 2002-03-22 | Nikon Corp | Projectoin optical system, method of manufacturing the optical system, and projection exposure system equipped with the optical system |
US6842298B1 (en) * | 2000-09-12 | 2005-01-11 | Kla-Tencor Technologies Corporation | Broad band DUV, VUV long-working distance catadioptric imaging system |
JP2004512552A (en) * | 2000-10-20 | 2004-04-22 | カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス | 8 Reflection mirror type projection optical system for microlithography |
JP4245286B2 (en) | 2000-10-23 | 2009-03-25 | 株式会社ニコン | Catadioptric optical system and exposure apparatus provided with the optical system |
JP2002217095A (en) | 2000-11-14 | 2002-08-02 | Canon Inc | Aligner, method for fabricating semiconductor device, factory for producing semiconductor and method for maintaining aligner and position detector |
JP2002208551A (en) | 2001-01-10 | 2002-07-26 | Nikon Corp | Reflection/refraction optical system and projection aligner |
DE10123725A1 (en) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Objective for microlithographic projection, includes lens element with axis perpendicular to specified fluoride crystal plane |
KR20040015251A (en) | 2001-05-15 | 2004-02-18 | 칼 짜이스 에스엠티 아게 | Objective with fluoride crystal lenses |
DE10127227A1 (en) * | 2001-05-22 | 2002-12-05 | Zeiss Carl | Catadioptric reduction lens |
JP4780364B2 (en) | 2001-06-14 | 2011-09-28 | 株式会社ニコン | Catadioptric optical system and exposure apparatus provided with the optical system |
WO2003001520A1 (en) * | 2001-06-21 | 2003-01-03 | Koninklijke Philips Electronics N.V. | Optical scanning device |
DE10143385C2 (en) * | 2001-09-05 | 2003-07-17 | Zeiss Carl | Projection exposure system |
JP2003114387A (en) | 2001-10-04 | 2003-04-18 | Nikon Corp | Cata-dioptic system and projection exposure device equipped with the same system |
JP2005517570A (en) * | 2002-02-14 | 2005-06-16 | コンティネンタル・テーベス・アクチエンゲゼルシヤフト・ウント・コンパニー・オッフェネ・ハンデルスゲゼルシヤフト | How to adjust set variable brake pressure |
JP4016179B2 (en) | 2002-02-28 | 2007-12-05 | ソニー株式会社 | Exposure apparatus and converging lens control method |
US7075721B2 (en) * | 2002-03-06 | 2006-07-11 | Corning Incorporated | Compensator for radially symmetric birefringence |
DE10332112A1 (en) | 2003-07-09 | 2005-01-27 | Carl Zeiss Smt Ag | Manufacturing semiconductor, other finely-structured components involves setting working distance at least temporarily to less than maximum size of optical near field of emanating projection light |
JP4350341B2 (en) * | 2002-03-26 | 2009-10-21 | キヤノン株式会社 | Optical system and exposure apparatus |
US6912042B2 (en) * | 2002-03-28 | 2005-06-28 | Carl Zeiss Smt Ag | 6-mirror projection objective with few lenses |
JP2003297729A (en) * | 2002-04-03 | 2003-10-17 | Nikon Corp | Projection optical system, exposure apparatus, and method of exposure |
JP2003307680A (en) | 2002-04-17 | 2003-10-31 | Nikon Corp | Catadioptric system |
JP2003309059A (en) | 2002-04-17 | 2003-10-31 | Nikon Corp | Projection optical system and manufacturing method thereof, projection aligner, and exposure method |
JP4292497B2 (en) | 2002-04-17 | 2009-07-08 | 株式会社ニコン | Projection optical system, exposure apparatus, and exposure method |
WO2003093904A1 (en) * | 2002-05-03 | 2003-11-13 | Carl Zeiss Smt Ag | Projection lens comprising an extremely high aperture |
AU2002316719A1 (en) | 2002-07-17 | 2004-02-09 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Catadioptric multi-mirror systems for protection lithography |
JP4217437B2 (en) | 2002-07-22 | 2009-02-04 | キヤノン株式会社 | Zoom lens and image projection apparatus having the same |
US7154669B2 (en) * | 2002-08-05 | 2006-12-26 | Asml Holding N.V. | Method and system for correction of intrinsic birefringence in UV microlithography |
JP2005536775A (en) | 2002-08-23 | 2005-12-02 | 株式会社ニコン | Projection optical system, photolithography method and exposure apparatus, and method using exposure apparatus |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US8675276B2 (en) | 2003-02-21 | 2014-03-18 | Kla-Tencor Corporation | Catadioptric imaging system for broad band microscopy |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
JP2004317534A (en) | 2003-04-11 | 2004-11-11 | Nikon Corp | Catadioptric image-formation optical system, exposure device, and exposure method |
US7348575B2 (en) * | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
KR101516142B1 (en) | 2003-05-06 | 2015-05-04 | 가부시키가이샤 니콘 | Projection optical system, and exposure apparatus and exposure method |
JP2004333761A (en) | 2003-05-06 | 2004-11-25 | Nikon Corp | Catadioptric projection optical system, projection aligner, and exposure method |
US6995833B2 (en) | 2003-05-23 | 2006-02-07 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
JP2005003982A (en) | 2003-06-12 | 2005-01-06 | Nikon Corp | Projection optical system, and device and method of exposure |
KR101674329B1 (en) | 2003-06-19 | 2016-11-08 | 가부시키가이샤 니콘 | Exposure device and device producing method |
WO2005013009A1 (en) | 2003-08-01 | 2005-02-10 | E.I. Dupont De Nemours And Company | Use of perfluoro-n-alkanes in vacuum ultraviolet applications |
WO2005015316A2 (en) | 2003-08-12 | 2005-02-17 | Carl Zeiss Smt Ag | Projection objective for microlithography |
US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
JP4880869B2 (en) * | 2003-08-28 | 2012-02-22 | 株式会社ニコン | Lens system and projection exposure apparatus |
JP2007508591A (en) | 2003-10-17 | 2007-04-05 | カール・ツァイス・エスエムティー・アーゲー | Catadioptric projection objective |
WO2005059055A2 (en) | 2003-12-12 | 2005-06-30 | 3M Innovative Properties Company | Pressure sensitive adhesive composition and article |
WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
US7466489B2 (en) * | 2003-12-15 | 2008-12-16 | Susanne Beder | Projection objective having a high aperture and a planar end surface |
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US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
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US7224520B2 (en) * | 2004-09-28 | 2007-05-29 | Wavefront Research, Inc. | Compact fast catadioptric imager |
US7697198B2 (en) * | 2004-10-15 | 2010-04-13 | Carl Zeiss Smt Ag | Catadioptric projection objective |
DE102005045862A1 (en) * | 2004-10-19 | 2006-04-20 | Carl Zeiss Smt Ag | Optical system for ultraviolet light has liquid lens arranged in space between first and second limiting optical elements and containing liquid transparent for wavelength less than or equal to 200 nm |
US20060198018A1 (en) | 2005-02-04 | 2006-09-07 | Carl Zeiss Smt Ag | Imaging system |
JP2006309220A (en) | 2005-04-29 | 2006-11-09 | Carl Zeiss Smt Ag | Projection objective |
WO2007025643A1 (en) | 2005-08-30 | 2007-03-08 | Carl Zeiss Smt Ag | High-na projection objective with aspheric lens surfaces |
KR20080091182A (en) | 2006-01-30 | 2008-10-09 | 가부시키가이샤 니콘 | Cata-dioptric imaging system, exposure device, and device manufacturing method |
US8930758B2 (en) | 2012-01-16 | 2015-01-06 | Siemens Aktiengesellschaft | Automated testing of mechatronic systems |
-
2004
- 2004-12-10 WO PCT/EP2004/014100 patent/WO2005059645A2/en active Application Filing
- 2004-12-10 JP JP2006544290A patent/JP5102492B2/en not_active Expired - Fee Related
- 2004-12-15 US US10/596,626 patent/US7755839B2/en not_active Expired - Fee Related
- 2004-12-15 WO PCT/EP2004/014290 patent/WO2005059618A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4861148A (en) * | 1986-03-12 | 1989-08-29 | Matsushita Electric Industrial Co., Inc. | Projection optical system for use in precise copy |
EP0475020A2 (en) * | 1990-08-28 | 1992-03-18 | International Business Machines Corporation | Field compensated lens |
US6025115A (en) * | 1990-09-26 | 2000-02-15 | Canon Kabushiki Kaisha | Processing method for etching a substrate |
US20020102497A1 (en) * | 1999-06-04 | 2002-08-01 | Sparrow Robert W. | Fluoride lens crystal for optical microlithography systems |
US20030174408A1 (en) * | 2002-03-08 | 2003-09-18 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
Non-Patent Citations (1)
Title |
---|
JOHN H. BURNETT ET AL.: "High Index Materials for 193nm and 157nm Immersion Lithography", INTERNATIONAL SEMATECH, 2 August 2004 (2004-08-02), International Symposium on Immersion & 157 nm Lithography, Vancouver, XP001207229 * |
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US9366972B2 (en) | 2002-11-12 | 2016-06-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9477160B2 (en) | 2003-05-13 | 2016-10-25 | Asml Netherland B.V. | Lithographic apparatus and device manufacturing method |
US9285686B2 (en) | 2003-07-31 | 2016-03-15 | Asml Netherlands B.V. | Lithographic apparatus involving an immersion liquid supply system with an aperture |
US9429495B2 (en) | 2004-06-04 | 2016-08-30 | Carl Zeiss Smt Gmbh | System for measuring the image quality of an optical imaging system |
US9104117B2 (en) | 2004-07-07 | 2015-08-11 | Bob Streefkerk | Lithographic apparatus having a liquid detection system |
US9250537B2 (en) | 2004-07-12 | 2016-02-02 | Nikon Corporation | Immersion exposure apparatus and method with detection of liquid on members of the apparatus |
US8941810B2 (en) | 2005-12-30 | 2015-01-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8947631B2 (en) | 2005-12-30 | 2015-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9436096B2 (en) | 2005-12-30 | 2016-09-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9256136B2 (en) | 2010-04-22 | 2016-02-09 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply |
Also Published As
Publication number | Publication date |
---|---|
JP5102492B2 (en) | 2012-12-19 |
WO2005059645A2 (en) | 2005-06-30 |
JP2007529762A (en) | 2007-10-25 |
US7755839B2 (en) | 2010-07-13 |
WO2005059645A3 (en) | 2005-10-20 |
US20070091451A1 (en) | 2007-04-26 |
WO2005059645A9 (en) | 2006-06-08 |
WO2005059618A2 (en) | 2005-06-30 |
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