WO2005059645A3 - Microlithography projection objective with crystal elements - Google Patents

Microlithography projection objective with crystal elements Download PDF

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Publication number
WO2005059645A3
WO2005059645A3 PCT/EP2004/014100 EP2004014100W WO2005059645A3 WO 2005059645 A3 WO2005059645 A3 WO 2005059645A3 EP 2004014100 W EP2004014100 W EP 2004014100W WO 2005059645 A3 WO2005059645 A3 WO 2005059645A3
Authority
WO
WIPO (PCT)
Prior art keywords
projection objective
microlithography projection
crystal elements
crystal
lithography
Prior art date
Application number
PCT/EP2004/014100
Other languages
French (fr)
Other versions
WO2005059645A9 (en
WO2005059645A2 (en
Inventor
Karl-Heinz Schuster
Original Assignee
Zeiss Carl Smt Ag
Karl-Heinz Schuster
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Ag, Karl-Heinz Schuster filed Critical Zeiss Carl Smt Ag
Priority to JP2006544290A priority Critical patent/JP5102492B2/en
Priority to DE102005021341A priority patent/DE102005021341A1/en
Publication of WO2005059645A2 publication Critical patent/WO2005059645A2/en
Publication of WO2005059645A3 publication Critical patent/WO2005059645A3/en
Priority to US11/298,019 priority patent/US7375897B2/en
Publication of WO2005059645A9 publication Critical patent/WO2005059645A9/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Abstract

A microlithography projection objective is proposed with optical elements, i.e. lenses or planar-parallel plates (used as end-closure plates) of crystalline magnesium fluoride, quartz, lanthanum fluoride, sapphire and Alpha-aluminium oxide. Suitable crystallographic orientations, crystal 10 combinations, and polarizations of the light are described. Suitable applications are for immersion lithography or near-field lithography in the DUV and VLN range, using the highest numerical aperture values.
PCT/EP2004/014100 2003-12-19 2004-12-10 Microlithography projection objective with crystal elements WO2005059645A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006544290A JP5102492B2 (en) 2003-12-19 2004-12-10 Objective lens for microlithography projection with crystal elements
DE102005021341A DE102005021341A1 (en) 2004-12-10 2005-05-04 Imaging system for producing micro structured element e.g. integrated circuit has optical element whose optical crystal axis is parallel to optical axis of imaging system whereby one component of optical element is reflected more strongly
US11/298,019 US7375897B2 (en) 2003-12-19 2005-12-09 Imaging systems

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US53062303P 2003-12-19 2003-12-19
US60/530,623 2003-12-19
US56800604P 2004-05-04 2004-05-04
US60/568,006 2004-05-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/298,019 Continuation-In-Part US7375897B2 (en) 2003-12-19 2005-12-09 Imaging systems

Publications (3)

Publication Number Publication Date
WO2005059645A2 WO2005059645A2 (en) 2005-06-30
WO2005059645A3 true WO2005059645A3 (en) 2005-10-20
WO2005059645A9 WO2005059645A9 (en) 2006-06-08

Family

ID=34704297

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/EP2004/014100 WO2005059645A2 (en) 2003-12-19 2004-12-10 Microlithography projection objective with crystal elements
PCT/EP2004/014290 WO2005059618A2 (en) 2003-12-19 2004-12-15 Microlithography projection objective with crystal lens

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/014290 WO2005059618A2 (en) 2003-12-19 2004-12-15 Microlithography projection objective with crystal lens

Country Status (3)

Country Link
US (1) US7755839B2 (en)
JP (1) JP5102492B2 (en)
WO (2) WO2005059645A2 (en)

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