WO2005059971A3 - Active matrix pixel device with photo sensor - Google Patents
Active matrix pixel device with photo sensor Download PDFInfo
- Publication number
- WO2005059971A3 WO2005059971A3 PCT/IB2004/052778 IB2004052778W WO2005059971A3 WO 2005059971 A3 WO2005059971 A3 WO 2005059971A3 IB 2004052778 W IB2004052778 W IB 2004052778W WO 2005059971 A3 WO2005059971 A3 WO 2005059971A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- amorphous silicon
- diode
- tft
- region
- active matrix
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/596,380 US7514762B2 (en) | 2003-12-15 | 2004-12-13 | Active matrix pixel device with photo sensor |
JP2006544657A JP2007524197A (en) | 2003-12-15 | 2004-12-13 | Active matrix pixel device with optical sensor |
EP04806570A EP1697993A2 (en) | 2003-12-15 | 2004-12-13 | Active matrix pixel device with photo sensor |
US12/391,334 US8067277B2 (en) | 2003-12-15 | 2009-02-24 | Active matrix device with photo sensor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0329002.0 | 2003-12-15 | ||
GB0329002A GB0329002D0 (en) | 2003-12-15 | 2003-12-15 | Photo sensor |
GB0426413.1 | 2004-12-02 | ||
GB0426413A GB0426413D0 (en) | 2003-12-15 | 2004-12-02 | Active matrix pixel device with photo sensor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/391,334 Division US8067277B2 (en) | 2003-12-15 | 2009-02-24 | Active matrix device with photo sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005059971A2 WO2005059971A2 (en) | 2005-06-30 |
WO2005059971A3 true WO2005059971A3 (en) | 2005-08-04 |
Family
ID=34702507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2004/052778 WO2005059971A2 (en) | 2003-12-15 | 2004-12-13 | Active matrix pixel device with photo sensor |
Country Status (5)
Country | Link |
---|---|
US (2) | US7514762B2 (en) |
EP (1) | EP1697993A2 (en) |
JP (1) | JP2007524197A (en) |
KR (1) | KR20070003784A (en) |
WO (1) | WO2005059971A2 (en) |
Families Citing this family (72)
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US6998656B2 (en) * | 2003-02-07 | 2006-02-14 | Hewlett-Packard Development Company, L.P. | Transparent double-injection field-effect transistor |
CA2419704A1 (en) | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
US7514762B2 (en) * | 2003-12-15 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Active matrix pixel device with photo sensor |
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US7397065B2 (en) * | 2006-05-02 | 2008-07-08 | Tpo Displays Corp. | Organic electroluminescent device and fabrication methods thereof |
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US20080061678A1 (en) * | 2006-09-12 | 2008-03-13 | Matsushita Electric Industrial Co., Ltd. | Light emitting device |
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US7955890B2 (en) * | 2008-06-24 | 2011-06-07 | Applied Materials, Inc. | Methods for forming an amorphous silicon film in display devices |
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US4862237A (en) * | 1983-01-10 | 1989-08-29 | Seiko Epson Corporation | Solid state image sensor |
US5262649A (en) * | 1989-09-06 | 1993-11-16 | The Regents Of The University Of Michigan | Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation |
EP0634800A1 (en) * | 1993-07-12 | 1995-01-18 | Philips Electronics Uk Limited | An imaging device |
US5589694A (en) * | 1993-03-22 | 1996-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a thin film transistor and thin film diode |
US20010052597A1 (en) * | 2000-06-20 | 2001-12-20 | U.S. Philips Corporation | Light-emitting matrix array display devices with light sensing elements |
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KR910006249B1 (en) * | 1983-04-01 | 1991-08-17 | 가부시기가이샤 히다찌세이사꾸쇼 | Semiconductor device |
JPS6351681A (en) * | 1986-08-20 | 1988-03-04 | Agency Of Ind Science & Technol | Semiconductor device |
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JP3193803B2 (en) * | 1993-03-12 | 2001-07-30 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor element |
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EP1129446A1 (en) | 1999-09-11 | 2001-09-05 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display device |
GB0219771D0 (en) * | 2002-08-24 | 2002-10-02 | Koninkl Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuit elements |
US7514762B2 (en) * | 2003-12-15 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Active matrix pixel device with photo sensor |
-
2004
- 2004-12-13 US US10/596,380 patent/US7514762B2/en active Active
- 2004-12-13 WO PCT/IB2004/052778 patent/WO2005059971A2/en not_active Application Discontinuation
- 2004-12-13 JP JP2006544657A patent/JP2007524197A/en not_active Withdrawn
- 2004-12-13 EP EP04806570A patent/EP1697993A2/en not_active Withdrawn
- 2004-12-13 KR KR1020067011482A patent/KR20070003784A/en not_active Application Discontinuation
-
2009
- 2009-02-24 US US12/391,334 patent/US8067277B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4862237A (en) * | 1983-01-10 | 1989-08-29 | Seiko Epson Corporation | Solid state image sensor |
US5262649A (en) * | 1989-09-06 | 1993-11-16 | The Regents Of The University Of Michigan | Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation |
US5589694A (en) * | 1993-03-22 | 1996-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a thin film transistor and thin film diode |
EP0634800A1 (en) * | 1993-07-12 | 1995-01-18 | Philips Electronics Uk Limited | An imaging device |
US20010052597A1 (en) * | 2000-06-20 | 2001-12-20 | U.S. Philips Corporation | Light-emitting matrix array display devices with light sensing elements |
Also Published As
Publication number | Publication date |
---|---|
US20090162961A1 (en) | 2009-06-25 |
KR20070003784A (en) | 2007-01-05 |
US8067277B2 (en) | 2011-11-29 |
US7514762B2 (en) | 2009-04-07 |
EP1697993A2 (en) | 2006-09-06 |
US20070093007A1 (en) | 2007-04-26 |
JP2007524197A (en) | 2007-08-23 |
WO2005059971A2 (en) | 2005-06-30 |
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