Recherche Images Maps Play YouTube Actualités Gmail Drive Plus »
Connexion
Les utilisateurs de lecteurs d'écran peuvent cliquer sur ce lien pour activer le mode d'accessibilité. Celui-ci propose les mêmes fonctionnalités principales, mais il est optimisé pour votre lecteur d'écran.

Brevets

  1. Recherche avancée dans les brevets
Numéro de publicationWO2005060723 A3
Type de publicationDemande
Numéro de demandePCT/US2004/005266
Date de publication18 janv. 2007
Date de dépôt23 févr. 2004
Date de priorité2 déc. 2003
Autre référence de publicationWO2005060723A2
Numéro de publicationPCT/2004/5266, PCT/US/2004/005266, PCT/US/2004/05266, PCT/US/4/005266, PCT/US/4/05266, PCT/US2004/005266, PCT/US2004/05266, PCT/US2004005266, PCT/US200405266, PCT/US4/005266, PCT/US4/05266, PCT/US4005266, PCT/US405266, WO 2005/060723 A3, WO 2005060723 A3, WO 2005060723A3, WO-A3-2005060723, WO2005/060723A3, WO2005060723 A3, WO2005060723A3
InventeursHarry A Atwater Jr, James M Zahler, Anna Fontcuberta Imorral
DéposantCalifornia Inst Of Techn, Harry A Atwater Jr, James M Zahler, Anna Fontcuberta Imorral
Exporter la citationBiBTeX, EndNote, RefMan
Liens externes:  Patentscope, Espacenet
Wafer bonded epitaxial templates for silicon heterostructures
WO 2005060723 A3
Résumé
A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.
Citations de brevets
Brevet cité Date de dépôt Date de publication Déposant Titre
US5801084 *14 avr. 19971 sept. 1998Harris CorporationBonded wafer processing
US5882987 *26 août 199716 mars 1999International Business Machines CorporationSmart-cut process for the production of thin semiconductor material films
US6323108 *27 juil. 199927 nov. 2001The United States Of America As Represented By The Secretary Of The NavyFabrication ultra-thin bonded semiconductor layers
US6562127 *16 janv. 200213 mai 2003The United States Of America As Represented By The Secretary Of The NavyMethod of making mosaic array of thin semiconductor material of large substrates
Classifications
Classification internationaleH01L21/30, H01L21/3213, H01L21/265, H01L21/762, H01L21/321, H01L21/306, H01L33/00
Classification coopérativeH01L21/30617, H01L33/0079, H01L21/76254, H01L21/32115, H01L21/32134, H01L21/26506
Classification européenneH01L21/265A, H01L21/762D8B, H01L21/3213C2, H01L21/321P, H01L21/306B4B
Événements juridiques
DateCodeÉvénementDescription
7 juil. 2005AKDesignated states
Kind code of ref document: A2
Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW
7 juil. 2005ALDesignated countries for regional patents
Kind code of ref document: A2
Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG
3 juin 2006NENPNon-entry into the national phase in:
Ref country code: DE
3 juin 2006WWWWipo information: withdrawn in national office
Country of ref document: DE
28 févr. 2007122Ep: pct application non-entry in european phase