WO2005064650A3 - Method and apparatus for performing a limited area spectral analysis - Google Patents
Method and apparatus for performing a limited area spectral analysis Download PDFInfo
- Publication number
- WO2005064650A3 WO2005064650A3 PCT/US2004/043444 US2004043444W WO2005064650A3 WO 2005064650 A3 WO2005064650 A3 WO 2005064650A3 US 2004043444 W US2004043444 W US 2004043444W WO 2005064650 A3 WO2005064650 A3 WO 2005064650A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- spectral analysis
- limited area
- substrate
- area spectral
- optics assembly
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006547409A JP2007517408A (en) | 2003-12-23 | 2004-12-23 | Method and apparatus for performing spectral analysis of limited regions |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/744,711 US7158221B2 (en) | 2003-12-23 | 2003-12-23 | Method and apparatus for performing limited area spectral analysis |
US10/744,711 | 2003-12-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005064650A2 WO2005064650A2 (en) | 2005-07-14 |
WO2005064650A3 true WO2005064650A3 (en) | 2005-08-25 |
Family
ID=34678944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/043444 WO2005064650A2 (en) | 2003-12-23 | 2004-12-23 | Method and apparatus for performing a limited area spectral analysis |
Country Status (5)
Country | Link |
---|---|
US (3) | US7158221B2 (en) |
JP (1) | JP2007517408A (en) |
KR (1) | KR20070092096A (en) |
TW (1) | TW200527573A (en) |
WO (1) | WO2005064650A2 (en) |
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US7158221B2 (en) * | 2003-12-23 | 2007-01-02 | Applied Materials, Inc. | Method and apparatus for performing limited area spectral analysis |
US8152365B2 (en) | 2005-07-05 | 2012-04-10 | Mattson Technology, Inc. | Method and system for determining optical properties of semiconductor wafers |
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US20080176149A1 (en) * | 2006-10-30 | 2008-07-24 | Applied Materials, Inc. | Endpoint detection for photomask etching |
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US20080099435A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
US20080099436A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
TWI405909B (en) * | 2008-01-15 | 2013-08-21 | Asia Vital Components Co Ltd | Fan noise cancellation system |
US8009938B2 (en) * | 2008-02-29 | 2011-08-30 | Applied Materials, Inc. | Advanced process sensing and control using near infrared spectral reflectometry |
CN101990704B (en) * | 2008-04-03 | 2012-06-20 | 朗姆研究公司 | Methods and apparatus for normalizing optical emission spectra |
US20100005911A1 (en) * | 2008-07-11 | 2010-01-14 | Atlas Material Testing Technology, Llc | Weathering Test Apparatus With Real-Time Color Measurement |
US8274645B2 (en) * | 2009-07-20 | 2012-09-25 | Applied Materials, Inc. | Method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber |
US8670857B2 (en) * | 2010-02-02 | 2014-03-11 | Applied Materials, Inc. | Flexible process condition monitoring |
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US8173450B1 (en) * | 2011-02-14 | 2012-05-08 | Tokyo Electron Limited | Method of designing an etch stage measurement system |
US8173451B1 (en) * | 2011-02-16 | 2012-05-08 | Tokyo Electron Limited | Etch stage measurement system |
US8193007B1 (en) * | 2011-02-17 | 2012-06-05 | Tokyo Electron Limited | Etch process control using optical metrology and sensor devices |
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JP5964626B2 (en) * | 2012-03-22 | 2016-08-03 | 株式会社Screenホールディングス | Heat treatment equipment |
JP6296001B2 (en) * | 2015-05-20 | 2018-03-20 | 信越半導体株式会社 | Manufacturing method and evaluation method of silicon epitaxial wafer |
US11171023B2 (en) * | 2015-10-09 | 2021-11-09 | Applied Materials, Inc. | Diode laser for wafer heating for EPI processes |
US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
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US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
WO2018222771A1 (en) | 2017-06-02 | 2018-12-06 | Applied Materials, Inc. | Dry stripping of boron carbide hardmask |
US10234630B2 (en) | 2017-07-12 | 2019-03-19 | Applied Materials, Inc. | Method for creating a high refractive index wave guide |
US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
US10179941B1 (en) | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
KR102405723B1 (en) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | High pressure and high temperature annealing chamber |
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US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
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JP2021503714A (en) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Capacitor system for high pressure processing system |
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US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
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US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
WO2020092002A1 (en) | 2018-10-30 | 2020-05-07 | Applied Materials, Inc. | Methods for etching a structure for semiconductor applications |
JP2022507390A (en) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | Membrane deposition using enhanced diffusion process |
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US11114286B2 (en) | 2019-04-08 | 2021-09-07 | Applied Materials, Inc. | In-situ optical chamber surface and process sensor |
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US11499869B2 (en) | 2019-11-13 | 2022-11-15 | Applied Materials, Inc. | Optical wall and process sensor with plasma facing sensor |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091320A (en) * | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5213985A (en) * | 1991-05-22 | 1993-05-25 | Bell Communications Research, Inc. | Temperature measurement in a processing chamber using in-situ monitoring of photoluminescence |
US5313044A (en) * | 1992-04-28 | 1994-05-17 | Duke University | Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor |
EP0898300A2 (en) * | 1997-08-18 | 1999-02-24 | Motorola, Inc. | Method and apparatus for processing a semiconductor wafer on a robotic track having access to in situ wafer backside particle detection |
US20020054290A1 (en) * | 1997-09-22 | 2002-05-09 | Vurens Gerard H. | Optical measurment system using polarized light |
Family Cites Families (18)
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JPH0691045B2 (en) * | 1986-03-03 | 1994-11-14 | 日電アネルバ株式会社 | Etching monitor-device |
RU2036418C1 (en) | 1992-07-07 | 1995-05-27 | Научно-исследовательский институт механики и физики при Саратовском государственном университете | Device to determine thickness and optical properties of layers in process of their formation |
US5450205A (en) * | 1993-05-28 | 1995-09-12 | Massachusetts Institute Of Technology | Apparatus and method for real-time measurement of thin film layer thickness and changes thereof |
US5793042A (en) * | 1996-09-30 | 1998-08-11 | Quick; Nathaniel R. | Infrared spectrophotometer accelerated corrosion-erosion analysis system |
US6038525A (en) * | 1997-04-30 | 2000-03-14 | Southwest Research Institute | Process control for pulsed laser deposition using raman spectroscopy |
US5969805A (en) * | 1997-11-04 | 1999-10-19 | Micron Technology, Inc. | Method and apparatus employing external light source for endpoint detection |
US6390019B1 (en) * | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
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JP3740079B2 (en) * | 2002-03-04 | 2006-01-25 | 大日本スクリーン製造株式会社 | Apparatus and method for measuring etching groove depth distribution |
US7158221B2 (en) * | 2003-12-23 | 2007-01-02 | Applied Materials, Inc. | Method and apparatus for performing limited area spectral analysis |
-
2003
- 2003-12-23 US US10/744,711 patent/US7158221B2/en not_active Expired - Fee Related
-
2004
- 2004-12-23 KR KR1020067014878A patent/KR20070092096A/en not_active Application Discontinuation
- 2004-12-23 TW TW093140213A patent/TW200527573A/en unknown
- 2004-12-23 WO PCT/US2004/043444 patent/WO2005064650A2/en active Application Filing
- 2004-12-23 JP JP2006547409A patent/JP2007517408A/en active Pending
-
2006
- 2006-12-28 US US11/617,221 patent/US7330244B2/en not_active Expired - Fee Related
-
2007
- 2007-12-07 US US11/952,748 patent/US7602484B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091320A (en) * | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5213985A (en) * | 1991-05-22 | 1993-05-25 | Bell Communications Research, Inc. | Temperature measurement in a processing chamber using in-situ monitoring of photoluminescence |
US5313044A (en) * | 1992-04-28 | 1994-05-17 | Duke University | Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor |
EP0898300A2 (en) * | 1997-08-18 | 1999-02-24 | Motorola, Inc. | Method and apparatus for processing a semiconductor wafer on a robotic track having access to in situ wafer backside particle detection |
US20020054290A1 (en) * | 1997-09-22 | 2002-05-09 | Vurens Gerard H. | Optical measurment system using polarized light |
Also Published As
Publication number | Publication date |
---|---|
US20080074658A1 (en) | 2008-03-27 |
US7158221B2 (en) | 2007-01-02 |
KR20070092096A (en) | 2007-09-12 |
JP2007517408A (en) | 2007-06-28 |
US20050134834A1 (en) | 2005-06-23 |
WO2005064650A2 (en) | 2005-07-14 |
US7602484B2 (en) | 2009-10-13 |
US20070153263A1 (en) | 2007-07-05 |
US7330244B2 (en) | 2008-02-12 |
TW200527573A (en) | 2005-08-16 |
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