WO2005071762A3 - Superluminescent light emitting diode - Google Patents

Superluminescent light emitting diode Download PDF

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Publication number
WO2005071762A3
WO2005071762A3 PCT/CH2005/000031 CH2005000031W WO2005071762A3 WO 2005071762 A3 WO2005071762 A3 WO 2005071762A3 CH 2005000031 W CH2005000031 W CH 2005000031W WO 2005071762 A3 WO2005071762 A3 WO 2005071762A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
beam path
optical beam
junction
contact means
Prior art date
Application number
PCT/CH2005/000031
Other languages
French (fr)
Other versions
WO2005071762A2 (en
Inventor
Christian Velez
Raffaele Rezzonico
Original Assignee
Exalos Ag
Christian Velez
Raffaele Rezzonico
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exalos Ag, Christian Velez, Raffaele Rezzonico filed Critical Exalos Ag
Priority to JP2006549828A priority Critical patent/JP2007519244A/en
Priority to EP05700326A priority patent/EP1706909A2/en
Publication of WO2005071762A2 publication Critical patent/WO2005071762A2/en
Publication of WO2005071762A3 publication Critical patent/WO2005071762A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes

Abstract

A non-lasing superluminescent light emitting diode (SLED) comprises a semiconductor heterostructure forming a PN junction and a waveguide defining an optical beam path. The heterostructure includes a gain region and an absorber region in series with the gain region in the optical beam path. A voltage is applied to the PN junction in the gain region by first contact means, so that light emission from the active region and along the optical beam path is produced. According to the invention, second contact means are provided, contacting the PN junction in the absorber region and operable to remove charge carriers generated by absorption in the absorber region. The second contact means are not connected to a voltage source, but to a charge carrier reservoir such as a metal surface. According to a preferred embodiment, the two end facets of the waveguide are perpendicular to the optical beam path.
PCT/CH2005/000031 2004-01-23 2005-01-21 Superluminescent light emitting diode WO2005071762A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006549828A JP2007519244A (en) 2004-01-23 2005-01-21 Super luminescent light emitting diode
EP05700326A EP1706909A2 (en) 2004-01-23 2005-01-21 Superluminescent light emitting diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/763,508 US7119373B2 (en) 2004-01-23 2004-01-23 Sled
US10/763,508 2004-01-23

Publications (2)

Publication Number Publication Date
WO2005071762A2 WO2005071762A2 (en) 2005-08-04
WO2005071762A3 true WO2005071762A3 (en) 2006-02-02

Family

ID=34795053

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2005/000031 WO2005071762A2 (en) 2004-01-23 2005-01-21 Superluminescent light emitting diode

Country Status (4)

Country Link
US (1) US7119373B2 (en)
EP (1) EP1706909A2 (en)
JP (1) JP2007519244A (en)
WO (1) WO2005071762A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7050222B2 (en) * 2003-05-23 2006-05-23 Covega, Inc. Methods and devices for high power, depolarized superluminescent diodes
US7485892B2 (en) * 2005-12-29 2009-02-03 Carl Zeiss Meditec Inc. Optical broadband emitters and methods of making the same
US7600893B2 (en) * 2007-05-01 2009-10-13 Exalos Ag Display apparatus, method and light source
WO2008131576A1 (en) * 2007-05-01 2008-11-06 Exalos Ag Light source, and device
US8154127B1 (en) 2007-07-30 2012-04-10 Hewlett-Packard Development Company, L.P. Optical device and method of making the same
KR100953658B1 (en) * 2008-06-05 2010-04-20 삼성모바일디스플레이주식회사 Organic light emitting diode display device
US8320621B2 (en) 2009-12-21 2012-11-27 Microsoft Corporation Depth projector system with integrated VCSEL array
US8670029B2 (en) 2010-06-16 2014-03-11 Microsoft Corporation Depth camera illuminator with superluminescent light-emitting diode
DE102011111604B4 (en) * 2011-08-25 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Radiation-emitting semiconductor component
US10109762B2 (en) * 2012-09-28 2018-10-23 Canon Kabushiki Kaisha Light source and optical coherence tomography apparatus including the light source
CN103137818B (en) * 2013-03-07 2016-03-30 天津三安光电有限公司 A kind of LED for plant illumination
US9397254B2 (en) 2013-10-24 2016-07-19 Electronics And Telecommunications Research Institute Superluminescent diode and method for implementing the same
JP2015226048A (en) * 2014-05-29 2015-12-14 株式会社トリマティス Broadband light source
JP6679767B1 (en) * 2019-01-07 2020-04-15 Ｄｏｗａエレクトロニクス株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
DE102019201699A1 (en) 2019-02-11 2019-04-04 Carl Zeiss Smt Gmbh Optical sensor for a projection exposure apparatus for semiconductor lithography and projection exposure apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0301438A2 (en) * 1987-07-27 1989-02-01 Ortel Corporation Superluminescent diode and single mode laser
US5252839A (en) * 1992-06-10 1993-10-12 Hewlett-Packard Company Superluminescent light-emitting diode with reverse biased absorber
WO2004005985A1 (en) * 2002-07-05 2004-01-15 Denselight Semiconductors Pte Ltd A superluminescent diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236377A (en) * 1987-03-25 1988-10-03 Fujitsu Ltd Edge emission type light-emitting diode
JP2658398B2 (en) * 1989-06-14 1997-09-30 松下電器産業株式会社 Semiconductor light emitting device
JP2695995B2 (en) * 1991-01-14 1998-01-14 株式会社東芝 Optical semiconductor device
US5606572A (en) * 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
JPH08162669A (en) * 1994-12-06 1996-06-21 Nippondenso Co Ltd Superluminescent diode
US6184542B1 (en) * 1998-06-16 2001-02-06 Princeton Lightwave Superluminescent diode and optical amplifier with extended bandwidth
JP2003332667A (en) * 2002-05-13 2003-11-21 Sumitomo Electric Ind Ltd Semiconductor laser module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0301438A2 (en) * 1987-07-27 1989-02-01 Ortel Corporation Superluminescent diode and single mode laser
US5252839A (en) * 1992-06-10 1993-10-12 Hewlett-Packard Company Superluminescent light-emitting diode with reverse biased absorber
WO2004005985A1 (en) * 2002-07-05 2004-01-15 Denselight Semiconductors Pte Ltd A superluminescent diode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
OKAMOTO H ET AL: "A NARROW BEAM 1.3-MUM-SUPER LUMINESCENT DIODE INTEGRATED WITH A SPOT-SIZE CONVERTER AND A NEW TYPE REAR ABSORBING REGION", JOURNAL OF LIGHTWAVE TECHNOLOGY, IEEE. NEW YORK, US, vol. 16, no. 10, October 1998 (1998-10-01), pages 1881 - 1887, XP000793326, ISSN: 0733-8724 *

Also Published As

Publication number Publication date
WO2005071762A2 (en) 2005-08-04
US20050161685A1 (en) 2005-07-28
EP1706909A2 (en) 2006-10-04
JP2007519244A (en) 2007-07-12
US7119373B2 (en) 2006-10-10

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