WO2005074606A3 - Method of photolithography using a fluid and a system thereof - Google Patents

Method of photolithography using a fluid and a system thereof Download PDF

Info

Publication number
WO2005074606A3
WO2005074606A3 PCT/US2005/003219 US2005003219W WO2005074606A3 WO 2005074606 A3 WO2005074606 A3 WO 2005074606A3 US 2005003219 W US2005003219 W US 2005003219W WO 2005074606 A3 WO2005074606 A3 WO 2005074606A3
Authority
WO
WIPO (PCT)
Prior art keywords
fluid
projection optical
exposure system
optical exposure
refractive index
Prior art date
Application number
PCT/US2005/003219
Other languages
French (fr)
Other versions
WO2005074606A2 (en
Inventor
Bruce W Smith
Original Assignee
Rochester Inst Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rochester Inst Tech filed Critical Rochester Inst Tech
Priority to EP05712603A priority Critical patent/EP1723467A2/en
Priority to JP2006552206A priority patent/JP2007520893A/en
Publication of WO2005074606A2 publication Critical patent/WO2005074606A2/en
Publication of WO2005074606A3 publication Critical patent/WO2005074606A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Abstract

A photolithographic exposure system for use on a photoresis on a substrate includes an illumination system, a photomask with one or more object patterns, a projection optical exposure system, and a fluid dispensing system. The projection optical exposure system is positioned to project an image of the one or more object patterns toward an image plane. The fluid dispensing system positions a fluid between the projection optical exposure system and the photoresist on the substrate. The fluid has a refractive index value above a refractive index value of water and an absorbance below 0.8 per millimeter at wavelength between about 180 nm and about 300 nm.
PCT/US2005/003219 2004-02-03 2005-02-03 Method of photolithography using a fluid and a system thereof WO2005074606A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05712603A EP1723467A2 (en) 2004-02-03 2005-02-03 Method of photolithography using a fluid and a system thereof
JP2006552206A JP2007520893A (en) 2004-02-03 2005-02-03 Photolithographic method and system using fluid

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54134904P 2004-02-03 2004-02-03
US60/541,349 2004-02-03

Publications (2)

Publication Number Publication Date
WO2005074606A2 WO2005074606A2 (en) 2005-08-18
WO2005074606A3 true WO2005074606A3 (en) 2006-10-05

Family

ID=34837480

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/003219 WO2005074606A2 (en) 2004-02-03 2005-02-03 Method of photolithography using a fluid and a system thereof

Country Status (5)

Country Link
US (1) US8852850B2 (en)
EP (1) EP1723467A2 (en)
JP (1) JP2007520893A (en)
KR (1) KR20070039869A (en)
WO (1) WO2005074606A2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US9134623B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100585476B1 (en) * 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10261775A1 (en) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Device for the optical measurement of an imaging system
KR101381538B1 (en) 2003-02-26 2014-04-04 가부시키가이샤 니콘 Exposure apparatus and method, and method of manufacturing device
WO2004086470A1 (en) 2003-03-25 2004-10-07 Nikon Corporation Exposure system and device production method
WO2004090956A1 (en) 2003-04-07 2004-10-21 Nikon Corporation Exposure apparatus and method for manufacturing device
KR20110104084A (en) 2003-04-09 2011-09-21 가부시키가이샤 니콘 Immersion lithography fluid control system
KR101431938B1 (en) * 2003-04-10 2014-08-19 가부시키가이샤 니콘 Environmental system including a transport region for an immersion lithography apparatus
WO2004090633A2 (en) * 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
KR101129213B1 (en) * 2003-04-10 2012-03-27 가부시키가이샤 니콘 Run-off path to collect liquid for an immersion lithography apparatus
EP2950148B1 (en) 2003-04-10 2016-09-21 Nikon Corporation Environmental system including vaccum scavenge for an immersion lithography apparatus
SG2013077797A (en) 2003-04-11 2017-02-27 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
SG139736A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
EP1614000B1 (en) 2003-04-17 2012-01-18 Nikon Corporation Immersion lithographic apparatus
KR20060009356A (en) * 2003-05-15 2006-01-31 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
TWI503865B (en) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI463533B (en) 2003-05-23 2014-12-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
KR20110110320A (en) 2003-05-28 2011-10-06 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3104396B1 (en) 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
KR101265450B1 (en) * 2003-06-19 2013-05-16 가부시키가이샤 니콘 Exposure device and device producing method
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
JP4697138B2 (en) 2003-07-08 2011-06-08 株式会社ニコン Immersion lithography apparatus, immersion lithography method, and device manufacturing method
CN102944981A (en) 2003-07-09 2013-02-27 株式会社尼康 Exposure apparatus, and device fabricating method
KR101296501B1 (en) * 2003-07-09 2013-08-13 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
JP4524669B2 (en) 2003-07-25 2010-08-18 株式会社ニコン Projection optical system inspection method and inspection apparatus
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
CN102323724B (en) 2003-07-28 2014-08-13 株式会社尼康 Liquid immersion exposure apparatus, producing method thereof, exposure apparatus and device producing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101303536B (en) 2003-08-29 2011-02-09 株式会社尼康 Exposure apparatus and device producing method
CN101430508B (en) 2003-09-03 2011-08-10 株式会社尼康 Device and method for supplying fluid for immersion lithography
WO2005029559A1 (en) 2003-09-19 2005-03-31 Nikon Corporation Exposure apparatus and device producing method
KR101335736B1 (en) 2003-09-29 2013-12-02 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device manufacturing method
KR101361892B1 (en) 2003-10-08 2014-02-12 가부시키가이샤 자오 니콘 Substrate carrying apparatus, substrate carrying method, exposure apparatus, exposure method, and method for producing device
JP4335213B2 (en) 2003-10-08 2009-09-30 株式会社蔵王ニコン Substrate transport apparatus, exposure apparatus, and device manufacturing method
TWI553701B (en) 2003-10-09 2016-10-11 尼康股份有限公司 Exposure apparatus and exposure method, component manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
WO2005050324A2 (en) * 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
EP3139214B1 (en) 2003-12-03 2019-01-30 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR101281397B1 (en) 2003-12-15 2013-07-02 가부시키가이샤 니콘 Stage system, exposure apparatus and exposure method
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
TWI259319B (en) * 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
US20050161644A1 (en) 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101276392B1 (en) 2004-02-03 2013-06-19 가부시키가이샤 니콘 Exposure apparatus and method of producing device
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
TWI628697B (en) 2004-03-25 2018-07-01 尼康股份有限公司 Exposure apparatus, and device manufacturing method
WO2005111722A2 (en) 2004-05-04 2005-11-24 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005119369A1 (en) * 2004-06-04 2005-12-15 Carl Zeiss Smt Ag Projection system with compensation of intensity variatons and compensation element therefor
KR101433496B1 (en) 2004-06-09 2014-08-22 가부시키가이샤 니콘 Exposure system and device production method
JP4264038B2 (en) * 2004-07-13 2009-05-13 パナソニック株式会社 Liquid for immersion exposure and pattern forming method
WO2006019124A1 (en) 2004-08-18 2006-02-23 Nikon Corporation Exposure apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101506100B1 (en) 2004-09-17 2015-03-26 가부시키가이샤 니콘 Exposure apparatus, exposure method, and method for manufacturing device
US7894040B2 (en) * 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006053751A2 (en) 2004-11-18 2006-05-26 Carl Zeiss Smt Ag Projection lens system of a microlithographic projection exposure installation
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
WO2006080516A1 (en) 2005-01-31 2006-08-03 Nikon Corporation Exposure apparatus and method for manufacturing device
KR101140755B1 (en) 2005-02-10 2012-05-03 에이에스엠엘 네델란즈 비.브이. Immersion liquid, exposure apparatus, and exposure process
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
JP5045437B2 (en) * 2005-06-21 2012-10-10 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
WO2007001848A2 (en) * 2005-06-24 2007-01-04 Sachem, Inc. High refractive index fluids with low absorption for immersion lithography
WO2007017089A1 (en) 2005-07-25 2007-02-15 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
KR100768849B1 (en) * 2005-12-06 2007-10-22 엘지전자 주식회사 Power supply apparatus and method for line conection type fuel cell system
US7893047B2 (en) * 2006-03-03 2011-02-22 Arch Chemicals, Inc. Biocide composition comprising pyrithione and pyrrole derivatives
DE102006021797A1 (en) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optical imaging device with thermal damping
US20080063982A1 (en) * 2006-08-10 2008-03-13 Stefan Wurm Fluids and methods of forming thereof
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8011377B2 (en) * 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7900641B2 (en) 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8193182B2 (en) 2008-01-04 2012-06-05 Intellikine, Inc. Substituted isoquinolin-1(2H)-ones, and methods of use thereof
US8629970B2 (en) * 2008-01-23 2014-01-14 Asml Netherlands B.V. Immersion lithographic apparatus with immersion fluid re-circulating system
KR101448152B1 (en) 2008-03-26 2014-10-07 삼성전자주식회사 Distance measuring sensor having vertical photogate and three dimensional color image sensor having the same
JP5097166B2 (en) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic apparatus and method of operating the apparatus
DK2663309T3 (en) 2011-01-10 2017-06-19 Infinity Pharmaceuticals Inc METHODS FOR PRODUCING ISOQUINOLINONES AND SOLID FORMS OF ISOQUINOLINONES
US20130016041A1 (en) * 2011-07-13 2013-01-17 Kuo-Ching Chiang High Resolution Mouse

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4493533A (en) * 1981-04-27 1985-01-15 Hoffmann-La Roche Inc. Immersion oil containing aliphatic thio compounds
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS57182712A (en) * 1981-04-27 1982-11-10 Hoffmann La Roche Immersion oil
JPH04305917A (en) * 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH06124873A (en) * 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
US5900534A (en) * 1996-10-07 1999-05-04 Natural Fuels Corporation Densitometer
JP3747566B2 (en) * 1997-04-23 2006-02-22 株式会社ニコン Immersion exposure equipment
JP3817836B2 (en) * 1997-06-10 2006-09-06 株式会社ニコン EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
JPH11176727A (en) * 1997-12-11 1999-07-02 Nikon Corp Projection aligner
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (en) * 1998-08-11 2000-02-25 Nikon Corp Projection aligner and exposure method
DE10210899A1 (en) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refractive projection lens for immersion lithography
US7145641B2 (en) * 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4493533A (en) * 1981-04-27 1985-01-15 Hoffmann-La Roche Inc. Immersion oil containing aliphatic thio compounds
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US9285686B2 (en) 2003-07-31 2016-03-15 Asml Netherlands B.V. Lithographic apparatus involving an immersion liquid supply system with an aperture
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US9134623B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9134622B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US9436096B2 (en) 2005-12-30 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947631B2 (en) 2005-12-30 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply

Also Published As

Publication number Publication date
JP2007520893A (en) 2007-07-26
US20050270505A1 (en) 2005-12-08
EP1723467A2 (en) 2006-11-22
US8852850B2 (en) 2014-10-07
WO2005074606A2 (en) 2005-08-18
KR20070039869A (en) 2007-04-13

Similar Documents

Publication Publication Date Title
WO2005074606A3 (en) Method of photolithography using a fluid and a system thereof
EP1670041A4 (en) Exposure method and apparatus, and device manufacturing method
JP2009042753A5 (en)
EP2278402A3 (en) Optical element and exposure apparatus
ATE394706T1 (en) PHOTO MASK
EP1589377A3 (en) Patterning process and resist overcoat material
TW201203318A (en) Exposure method, exposure device, and device manufacturing method
WO2005001572A3 (en) Lithographic apparatus and device manufacturing method
WO2004053938A3 (en) Programmable photolithographic mask based on nano-sized semiconductor particles
TW200615282A (en) Polymer, resist protective coating material, and patterning process
JP2010507906A (en) Method for forming a patterned material layer
WO2005096098A3 (en) Projection objective, projection exposure apparatus and reflective reticle for microlithography
WO2005088395A3 (en) Systems and methods for sub-wavelength imaging
EP1122611A3 (en) Method of reducing surface defects of a patterned resist layer
US7022452B2 (en) Contrast enhanced photolithography
TW200730867A (en) Projection objective of a microlithographic projection exposure apparatus
WO2006041544A3 (en) Solid immersion lens lithography
EP1643542A4 (en) Focus test mask, focus measureing method, and exposure device
WO2005081068A3 (en) Imaging system for a microlithographical projection light system
TW200727337A (en) Exposure method and apparatus
Partel et al. Contact and proximity lithography using 193 nm Excimer laser in Mask Aligner
US20060063104A1 (en) Top anti-reflective coating composition and method for forming the pattern of a semiconductor device using the same
JP4978097B2 (en) Proximity exposure photomask and color filter manufacturing method
WO2003019272A3 (en) Exposure mask
JP2005243904A5 (en)

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 2006552206

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020067015749

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

WWE Wipo information: entry into national phase

Ref document number: 2005712603

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2005712603

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067015749

Country of ref document: KR