WO2005079182A3 - Vertical fin-fet mos devices - Google Patents

Vertical fin-fet mos devices Download PDF

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Publication number
WO2005079182A3
WO2005079182A3 PCT/US2004/001721 US2004001721W WO2005079182A3 WO 2005079182 A3 WO2005079182 A3 WO 2005079182A3 US 2004001721 W US2004001721 W US 2004001721W WO 2005079182 A3 WO2005079182 A3 WO 2005079182A3
Authority
WO
WIPO (PCT)
Prior art keywords
fins
fin
vertical fin
vertical
mos devices
Prior art date
Application number
PCT/US2004/001721
Other languages
French (fr)
Other versions
WO2005079182A2 (en
Inventor
Jochen Beintner
Dureseti Chidambarrao
Ramachandra Divkaruni
Original Assignee
Ibm
Jochen Beintner
Dureseti Chidambarrao
Ramachandra Divkaruni
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Jochen Beintner, Dureseti Chidambarrao, Ramachandra Divkaruni filed Critical Ibm
Priority to AT04704467T priority Critical patent/ATE546837T1/en
Priority to PCT/US2004/001721 priority patent/WO2005079182A2/en
Priority to JP2006551016A priority patent/JP4717014B2/en
Priority to CNB2004800407737A priority patent/CN100570894C/en
Priority to US10/597,288 priority patent/US7683428B2/en
Priority to EP04704467A priority patent/EP1711966B1/en
Priority to TW094100034A priority patent/TWI319218B/en
Publication of WO2005079182A2 publication Critical patent/WO2005079182A2/en
Publication of WO2005079182A3 publication Critical patent/WO2005079182A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon

Abstract

A new class of high-density, vertical Fin-FET devices that exhibit low contact resistance is described. These vertical Fin-FET devices have vertical silicon “fins” (12A) that act as the transistor body. Doped source and drain regions (26A, 28A) are formed at the bottoms and tops, respectively, of the fins (12A). Gates (24A, 24B) are formed along sidewalls of the fins. Current flows vertically through the fins (12A) between the source and drain regions (26A, 28A) when an appropriate bias is applied to the gates (24A, 24B). An integrated process for forming pFET, nFET, multi-fin, single-fin, multi-gate and double-gate vertical Fin-FETs simultaneously is described.
PCT/US2004/001721 2004-01-22 2004-01-22 Vertical fin-fet mos devices WO2005079182A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
AT04704467T ATE546837T1 (en) 2004-01-22 2004-01-22 VERTICAL FIN FET MOS DEVICES
PCT/US2004/001721 WO2005079182A2 (en) 2004-01-22 2004-01-22 Vertical fin-fet mos devices
JP2006551016A JP4717014B2 (en) 2004-01-22 2004-01-22 Vertical FIN-FETMOS device
CNB2004800407737A CN100570894C (en) 2004-01-22 2004-01-22 Vertical fin-FET MOS devices
US10/597,288 US7683428B2 (en) 2004-01-22 2004-01-22 Vertical Fin-FET MOS devices
EP04704467A EP1711966B1 (en) 2004-01-22 2004-01-22 Vertical fin-fet mos devices
TW094100034A TWI319218B (en) 2004-01-22 2005-01-03 Vertical fin-fet mos devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/001721 WO2005079182A2 (en) 2004-01-22 2004-01-22 Vertical fin-fet mos devices

Publications (2)

Publication Number Publication Date
WO2005079182A2 WO2005079182A2 (en) 2005-09-01
WO2005079182A3 true WO2005079182A3 (en) 2006-04-06

Family

ID=34887929

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/001721 WO2005079182A2 (en) 2004-01-22 2004-01-22 Vertical fin-fet mos devices

Country Status (7)

Country Link
US (1) US7683428B2 (en)
EP (1) EP1711966B1 (en)
JP (1) JP4717014B2 (en)
CN (1) CN100570894C (en)
AT (1) ATE546837T1 (en)
TW (1) TWI319218B (en)
WO (1) WO2005079182A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8734583B2 (en) 2006-04-04 2014-05-27 Micron Technology, Inc. Grown nanofin transistors
US8823006B2 (en) 2006-04-04 2014-09-02 Micron Technology, Inc. Nanofin transistors with crystalline semiconductor fins
US9087730B2 (en) 2006-04-04 2015-07-21 Micron Technology, Inc. DRAM with nanofin transistors

Families Citing this family (174)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
KR20090007393A (en) * 2006-04-04 2009-01-16 마이크론 테크놀로지, 인크. Nanofin tunneling transistors
US7425491B2 (en) 2006-04-04 2008-09-16 Micron Technology, Inc. Nanowire transistor with surrounding gate
KR100828030B1 (en) * 2006-10-25 2008-05-08 삼성전자주식회사 Semiconductor device including Fin FET and method of manufacturing the same
US8040717B2 (en) 2006-12-28 2011-10-18 National Institute Of Advanced Industrial Science And Technology SRAM cell and SRAM device
KR100861211B1 (en) 2007-04-12 2008-09-30 주식회사 하이닉스반도체 Semiconductor device and method for fabricating the same
WO2009096001A1 (en) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. Semiconductor storage device and memory embedded semiconductor device, and manufacturing method thereof
WO2009110050A1 (en) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 Method for manufacturing semiconductor device
JP5340180B2 (en) * 2008-02-15 2013-11-13 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device and manufacturing method thereof
US8211758B2 (en) * 2008-02-15 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and method of producing the same
US8241976B2 (en) 2008-02-15 2012-08-14 Unisantis Electronics Singapore Pte Ltd. Semiconductor surrounding gate transistor device and production method therefor
JP5356258B2 (en) * 2008-02-15 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Manufacturing method of semiconductor device
JP5779702B2 (en) * 2008-02-15 2015-09-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Semiconductor device and manufacturing method thereof
JP5632055B2 (en) * 2008-02-15 2014-11-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Semiconductor device and manufacturing method thereof
WO2009110048A1 (en) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 Semiconductor devuce and manufacturing method thereof
WO2009101704A1 (en) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. Method for manufacturing semiconductor device
US8158468B2 (en) * 2008-02-15 2012-04-17 Unisantis Electronics Singapore Pte Ltd. Production method for surrounding gate transistor semiconductor device
JP5356260B2 (en) * 2008-02-15 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Semiconductor device and manufacturing method thereof
JP6014726B2 (en) * 2008-02-15 2016-10-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Semiconductor device and manufacturing method thereof
KR101000472B1 (en) * 2008-05-07 2010-12-14 주식회사 하이닉스반도체 Soi device and method for fabricating the same
WO2009153712A1 (en) * 2008-06-17 2009-12-23 Nxp B.V. Finfet method and device
US20100090274A1 (en) * 2008-10-10 2010-04-15 Force Mos Technology Co. Ltd. Trench mosfet with shallow trench contact
JP5331443B2 (en) * 2008-10-29 2013-10-30 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method and semiconductor device
DE102008059500B4 (en) * 2008-11-28 2010-08-26 Advanced Micro Devices, Inc., Sunnyvale Method for producing a multi-gate transistor with homogeneously silicided land end regions
US8232150B2 (en) 2009-01-09 2012-07-31 International Business Machines Corporation Structure and method of forming a transistor with asymmetric channel and source/drain regions
CN101783322B (en) * 2009-01-19 2012-01-25 中芯国际集成电路制造(上海)有限公司 CMOS (complementary metal-oxide-semiconductor) transistor and manufacturing method thereof
JP4577592B2 (en) * 2009-04-20 2010-11-10 日本ユニサンティスエレクトロニクス株式会社 Manufacturing method of semiconductor device
US8274110B2 (en) 2009-05-20 2012-09-25 Micron Technology, Inc. Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory
JP2011066109A (en) * 2009-09-16 2011-03-31 Unisantis Electronics Japan Ltd Semiconductor memory device
US20130011986A1 (en) * 2011-07-08 2013-01-10 Huajie Zhou Method for Manufacturing Full Silicide Metal Gate Bulk Silicon Multi-Gate Fin Field Effect Transistors
CN102867751B (en) * 2011-07-08 2015-09-09 中国科学院微电子研究所 A kind of preparation method of full silicidation metal gate body silicon multiple-grid fin FET
US8546208B2 (en) * 2011-08-19 2013-10-01 International Business Machines Corporation Isolation region fabrication for replacement gate processing
US8969154B2 (en) 2011-08-23 2015-03-03 Micron Technology, Inc. Methods for fabricating semiconductor device structures and arrays of vertical transistor devices
CN102983079B (en) * 2011-09-06 2017-12-19 联华电子股份有限公司 Semiconductor technology
US10438836B2 (en) 2011-11-09 2019-10-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing a semiconductor device
US8759178B2 (en) 2011-11-09 2014-06-24 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8629038B2 (en) * 2012-01-05 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with vertical fins and methods for forming the same
US9059248B2 (en) * 2012-02-09 2015-06-16 International Business Machines Corporation Junction butting on SOI by raised epitaxial structure and method
US10515956B2 (en) 2012-03-01 2019-12-24 Taiwan Semiconductor Manufacturing Company Semiconductor devices having Fin Field Effect Transistor (FinFET) structures and manufacturing and design methods thereof
US9105744B2 (en) * 2012-03-01 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices having inactive fin field effect transistor (FinFET) structures and manufacturing and design methods thereof
US9166043B2 (en) 2012-05-17 2015-10-20 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9012981B2 (en) 2012-05-17 2015-04-21 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8829601B2 (en) 2012-05-17 2014-09-09 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8697511B2 (en) 2012-05-18 2014-04-15 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US8877578B2 (en) 2012-05-18 2014-11-04 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US8723268B2 (en) * 2012-06-13 2014-05-13 Synopsys, Inc. N-channel and P-channel end-to-end finFET cell architecture with relaxed gate pitch
US11037923B2 (en) * 2012-06-29 2021-06-15 Intel Corporation Through gate fin isolation
JP5856545B2 (en) * 2012-07-06 2016-02-09 株式会社東芝 Semiconductor device and manufacturing method thereof
US20140264607A1 (en) * 2013-03-13 2014-09-18 International Business Machines Corporation Iii-v finfets on silicon substrate
US9634000B2 (en) * 2013-03-14 2017-04-25 International Business Machines Corporation Partially isolated fin-shaped field effect transistors
US9245979B2 (en) * 2013-05-24 2016-01-26 GlobalFoundries, Inc. FinFET semiconductor devices with local isolation features and methods for fabricating the same
EP4224531A3 (en) * 2013-09-25 2023-08-23 Tahoe Research, Ltd. Isolation well doping with solid-state diffusion sources for finfet architectures
US9184281B2 (en) 2013-10-30 2015-11-10 Infineon Technologies Ag Method for manufacturing a vertical semiconductor device and vertical semiconductor device
US10460999B2 (en) 2013-11-27 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Metrology device and metrology method thereof
US9159811B2 (en) * 2013-12-18 2015-10-13 International Business Machines Corporation Growing buffer layers in bulk finFET structures
US9691763B2 (en) 2013-12-27 2017-06-27 International Business Machines Corporation Multi-gate FinFET semiconductor device with flexible design width
US9190466B2 (en) 2013-12-27 2015-11-17 International Business Machines Corporation Independent gate vertical FinFET structure
JP5657151B1 (en) 2014-01-23 2015-01-21 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Semiconductor device and manufacturing method of semiconductor device
US9087897B1 (en) 2014-01-31 2015-07-21 International Business Machines Corporation Semiconductor structures with pair(s) of vertical field effect transistors, each pair having a shared source/drain region and methods of forming the structures
US9318447B2 (en) * 2014-07-18 2016-04-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and method of forming vertical structure
US9299835B1 (en) 2014-12-04 2016-03-29 International Business Machines Corporation Vertical field effect transistors
US9620643B2 (en) 2015-01-27 2017-04-11 International Business Machines Corporation Reducing parasitic capacitance and resistance in finFET
EP3070737A1 (en) 2015-03-17 2016-09-21 IMEC vzw Vertical Fin-FET semiconductor device
KR102365305B1 (en) * 2015-03-27 2022-02-22 삼성전자주식회사 Semiconductor device
US9543304B2 (en) * 2015-04-02 2017-01-10 Stmicroelectronics, Inc. Vertical junction FinFET device and method for manufacture
US9659941B2 (en) 2015-06-30 2017-05-23 Globalfoundries Inc. Integrated circuit structure with methods of electrically connecting same
KR102424963B1 (en) 2015-07-30 2022-07-25 삼성전자주식회사 Integrated circuit device and method of manufacturing the same
WO2017052612A1 (en) 2015-09-25 2017-03-30 Intel Corporation Methods of doping fin structures of non-planar transistor devices
US9570356B1 (en) * 2015-12-07 2017-02-14 International Business Machines Corporation Multiple gate length vertical field-effect-transistors
US10026653B2 (en) 2015-12-16 2018-07-17 International Business Machines Corporation Variable gate lengths for vertical transistors
US9431305B1 (en) 2015-12-18 2016-08-30 International Business Machines Corporation Vertical transistor fabrication and devices
US9437503B1 (en) 2015-12-22 2016-09-06 International Business Machines Corporation Vertical FETs with variable bottom spacer recess
US9530700B1 (en) 2016-01-28 2016-12-27 International Business Machines Corporation Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess etch
US10141426B2 (en) * 2016-02-08 2018-11-27 International Business Macahines Corporation Vertical transistor device
US9666488B1 (en) * 2016-04-11 2017-05-30 Globalfoundries Inc. Pass-through contact using silicide
US9799655B1 (en) 2016-04-25 2017-10-24 International Business Machines Corporation Flipped vertical field-effect-transistor
US9721845B1 (en) 2016-04-26 2017-08-01 International Business Machines Corporation Vertical field effect transistors with bottom contact metal directly beneath fins
US10002962B2 (en) 2016-04-27 2018-06-19 International Business Machines Corporation Vertical FET structure
US10032906B2 (en) * 2016-04-29 2018-07-24 Samsung Electronics Co., Ltd. Vertical field effect transistor and method of fabricating the same
US9905645B2 (en) 2016-05-24 2018-02-27 Samsung Electronics Co., Ltd. Vertical field effect transistor having an elongated channel
US9865705B2 (en) 2016-06-02 2018-01-09 International Business Machines Corporation Vertical field effect transistors with bottom source/drain epitaxy
US10103246B2 (en) 2016-06-09 2018-10-16 International Business Machines Corporation Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges
US10083871B2 (en) 2016-06-09 2018-09-25 International Business Machines Corporation Fabrication of a vertical transistor with self-aligned bottom source/drain
US9870957B2 (en) * 2016-06-16 2018-01-16 Samsung Electronics Co., Ltd. Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFET
US9793160B1 (en) * 2016-07-03 2017-10-17 International Business Machines Coporation Aggressive tip-to-tip scaling using subtractive integraton
US9941391B2 (en) 2016-08-12 2018-04-10 International Business Machines Corporation Method of forming vertical transistor having dual bottom spacers
US9735253B1 (en) 2016-08-26 2017-08-15 International Business Machines Corporation Closely packed vertical transistors with reduced contact resistance
US11088033B2 (en) * 2016-09-08 2021-08-10 International Business Machines Corporation Low resistance source-drain contacts using high temperature silicides
FR3056010B1 (en) 2016-09-09 2018-10-26 Stmicroelectronics (Rousset) Sas METHOD FOR MANUFACTURING TRANSISTORS, IN PARTICULAR SELECTION TRANSISTORS FOR NON-VOLATILE MEMORIES, AND CORRESPONDING DEVICE
US11081484B2 (en) 2016-09-30 2021-08-03 Institute of Microelectronics, Chinese Academy of Sciences IC unit and method of manufacturing the same, and electronic device including the same
CN106298778A (en) 2016-09-30 2017-01-04 中国科学院微电子研究所 Semiconductor device and manufacture method thereof and include the electronic equipment of this device
US9716170B1 (en) 2016-09-30 2017-07-25 International Business Machines Corporation Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drain
WO2018059109A1 (en) * 2016-09-30 2018-04-05 中国科学院微电子研究所 Semiconductor device, manufacturing method thereof, and electronic apparatus comprising same
US10312346B2 (en) 2016-10-19 2019-06-04 International Business Machines Corporation Vertical transistor with variable gate length
US9741626B1 (en) 2016-10-20 2017-08-22 International Business Machines Corporation Vertical transistor with uniform bottom spacer formed by selective oxidation
US9773901B1 (en) 2016-10-26 2017-09-26 International Business Machines Corporation Bottom spacer formation for vertical transistor
US9899515B1 (en) 2016-10-31 2018-02-20 International Business Machines Corporation Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
US9806078B1 (en) * 2016-11-02 2017-10-31 Globalfoundries Inc. FinFET spacer formation on gate sidewalls, between the channel and source/drain regions
US10396208B2 (en) 2017-01-13 2019-08-27 International Business Machines Corporation Vertical transistors with improved top source/drain junctions
US10468524B2 (en) 2017-03-24 2019-11-05 International Business Machines Corporation Vertical field effect transistor with improved reliability
EP3404721A1 (en) * 2017-05-15 2018-11-21 IMEC vzw A method for forming pillars in a vertical transistor device
US9960272B1 (en) 2017-05-16 2018-05-01 International Business Machines Corporation Bottom contact resistance reduction on VFET
US10020381B1 (en) 2017-05-17 2018-07-10 International Business Machines Corporation Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors
US10622458B2 (en) 2017-05-19 2020-04-14 International Business Machines Corporation Self-aligned contact for vertical field effect transistor
US10573745B2 (en) * 2017-05-23 2020-02-25 International Business Machines Corporation Super long channel device within VFET architecture
US10424663B2 (en) * 2017-05-23 2019-09-24 International Business Machines Corporation Super long channel device within VFET architecture
US10199278B2 (en) 2017-05-30 2019-02-05 International Business Machines Corporation Vertical field effect transistor (FET) with controllable gate length
US10396178B2 (en) 2017-06-02 2019-08-27 International Business Machines Corporation Method of forming improved vertical FET process with controlled gate length and self-aligned junctions
US10276689B2 (en) 2017-06-07 2019-04-30 Globalfoundries Inc. Method of forming a vertical field effect transistor (VFET) and a VFET structure
US10672888B2 (en) 2017-08-21 2020-06-02 International Business Machines Corporation Vertical transistors having improved gate length control
CN109427762B (en) * 2017-08-22 2020-12-18 中芯国际集成电路制造(上海)有限公司 Electrostatic discharge transistor array device
US10170582B1 (en) 2017-09-13 2019-01-01 International Business Machines Corporation Uniform bottom spacer for vertical field effect transistor
US10121877B1 (en) 2017-09-13 2018-11-06 International Business Machines Corporation Vertical field effect transistor with metallic bottom region
US10504747B2 (en) 2017-09-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending
US10103247B1 (en) * 2017-10-17 2018-10-16 Globalfoundries Inc. Vertical transistor having buried contact, and contacts using work function metals and silicides
US10297507B2 (en) 2017-10-17 2019-05-21 International Business Machines Corporation Self-aligned vertical field-effect transistor with epitaxially grown bottom and top source drain regions
US10170588B1 (en) 2017-10-30 2019-01-01 International Business Machines Corporation Method of forming vertical transport fin field effect transistor with high-K dielectric feature uniformity
US10580770B2 (en) 2017-11-14 2020-03-03 International Business Machines Corporation Vertical transistors with different gate lengths
US10340364B2 (en) 2017-11-14 2019-07-02 International Business Machines Corporation H-shaped VFET with increased current drivability
US10468527B2 (en) 2017-11-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure and methods of fabricating thereof
KR102465533B1 (en) * 2017-11-21 2022-11-11 삼성전자주식회사 Semiconductor devices having a vertical channel
US10263122B1 (en) * 2017-11-30 2019-04-16 Globalfoundries Inc. Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a vertical field effect transistor
US10528817B2 (en) 2017-12-12 2020-01-07 International Business Machines Corporation Smart display apparatus and control system
US10325821B1 (en) 2017-12-13 2019-06-18 International Business Machines Corporation Three-dimensional stacked vertical transport field effect transistor logic gate with buried power bus
US10217674B1 (en) 2017-12-13 2019-02-26 International Business Machines Corporation Three-dimensional monolithic vertical field effect transistor logic gates
US10566444B2 (en) 2017-12-21 2020-02-18 International Business Machines Corporation Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance
US10297513B1 (en) 2017-12-29 2019-05-21 International Business Machines Corporation Stacked vertical NFET and PFET
US10373912B2 (en) 2018-01-05 2019-08-06 International Business Machines Corporation Replacement metal gate processes for vertical transport field-effect transistor
US10374060B2 (en) 2018-01-09 2019-08-06 International Business Machines Corporation VFET bottom epitaxy formed with anchors
US10374083B1 (en) 2018-01-17 2019-08-06 International Business Machines Corporation Vertical fin field effect transistor with reduced gate length variations
US10381346B1 (en) 2018-01-24 2019-08-13 International Business Machines Corporation Logic gate designs for 3D monolithic direct stacked VTFET
US10756217B2 (en) 2018-02-15 2020-08-25 Micron Technology, Inc. Access devices formed with conductive contacts
US10361200B1 (en) 2018-03-07 2019-07-23 International Business Machines Corporation Vertical fin field effect transistor with integral U-shaped electrical gate connection
US10418484B1 (en) * 2018-03-14 2019-09-17 Globalfoundries Inc. Vertical field effect transistors incorporating U-shaped semiconductor bodies and methods
US10361315B1 (en) 2018-03-22 2019-07-23 International Business Machines Corporation Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistor
US10797138B2 (en) * 2018-04-09 2020-10-06 Globalfoundries Inc. Vertical-transport field-effect transistors with self-aligned contacts
US10686057B2 (en) 2018-04-12 2020-06-16 International Business Machines Corporation Vertical transport FET devices having a sacrificial doped layer
US10439045B1 (en) 2018-05-09 2019-10-08 International Business Machines Corporation Flipped VFET with self-aligned junctions and controlled gate length
US10468503B1 (en) * 2018-05-15 2019-11-05 International Business Machines Corporation Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices
US10600695B2 (en) 2018-05-22 2020-03-24 International Business Machines Corporation Channel strain formation in vertical transport FETS with dummy stressor materials
US10468525B1 (en) * 2018-05-23 2019-11-05 International Business Machines Corporation VFET CMOS dual epitaxy integration
US10504794B1 (en) * 2018-06-25 2019-12-10 International Business Machines Corporation Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor
US10593797B2 (en) 2018-06-26 2020-03-17 International Business Machines Corporation Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy
US10453940B1 (en) 2018-06-26 2019-10-22 International Business Machines Corporation Vertical field effect transistor with strained channel region extension
US10930758B2 (en) 2018-08-13 2021-02-23 International Business Machines Corporation Space deposition between source/drain and sacrificial layers
US10672905B2 (en) * 2018-08-21 2020-06-02 International Business Machines Corporation Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
US10714399B2 (en) * 2018-08-21 2020-07-14 International Business Machines Corporation Gate-last process for vertical transport field-effect transistor
US10672670B2 (en) * 2018-08-21 2020-06-02 International Business Machines Corporation Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages
US10658246B2 (en) 2018-08-27 2020-05-19 International Business Machines Corporation Self-aligned vertical fin field effect transistor with replacement gate structure
US10658481B1 (en) 2018-10-29 2020-05-19 International Business Machines Corporation Self-aligned gate cut in direct stacked vertical transport field effect transistor (VTFET)
US11152507B2 (en) 2018-11-07 2021-10-19 International Business Machines Corporation Vertical field-effect transistor with a bottom contact that exhibits low electrical resistance
US10833079B2 (en) 2019-01-02 2020-11-10 International Business Machines Corporation Dual transport orientation for stacked vertical transport field-effect transistors
US11295985B2 (en) 2019-03-05 2022-04-05 International Business Machines Corporation Forming a backside ground or power plane in a stacked vertical transport field effect transistor
US10998233B2 (en) 2019-03-05 2021-05-04 International Business Machines Corporation Mechanically stable complementary field effect transistors
US10950545B2 (en) 2019-03-08 2021-03-16 International Business Machines Corporation Circuit wiring techniques for stacked transistor structures
US10892339B2 (en) 2019-03-13 2021-01-12 International Business Machines Corporation Gate first technique in vertical transport FET using doped silicon gates with silicide
US10777468B1 (en) 2019-03-21 2020-09-15 International Business Machines Corporation Stacked vertical field-effect transistors with sacrificial layer patterning
US10833081B2 (en) 2019-04-09 2020-11-10 International Business Machines Corporation Forming isolated contacts in a stacked vertical transport field effect transistor (VTFET)
US11569229B2 (en) 2019-04-12 2023-01-31 International Business Machines Corporation Stacked vertical transport field effect transistors with anchors
US10964603B2 (en) 2019-04-15 2021-03-30 International Business Machines Corporation Hybrid gate stack integration for stacked vertical transport field-effect transistors
US10985064B2 (en) 2019-05-29 2021-04-20 International Business Machines Corporation Buried power and ground in stacked vertical transport field effect transistors
US11004856B1 (en) 2019-11-12 2021-05-11 International Business Machines Corporation Stacked vertical transistor memory cell with epi connections
US11094819B2 (en) 2019-12-06 2021-08-17 International Business Machines Corporation Stacked vertical tunnel FET devices
US11615992B2 (en) 2020-01-15 2023-03-28 International Business Machines Corporation Substrate isolated VTFET devices
US11482617B2 (en) * 2020-03-17 2022-10-25 International Business Machines Corporation Vertical transport field-effect transistor including replacement gate
US11183583B2 (en) 2020-04-25 2021-11-23 International Business Machines Corporation Vertical transport FET with bottom source and drain extensions
US11476346B2 (en) 2020-06-24 2022-10-18 International Business Machines Corporation Vertical transistor having an oxygen-blocking top spacer
US11908907B2 (en) 2020-12-11 2024-02-20 International Business Machines Corporation VFET contact formation
US11563003B2 (en) 2021-01-20 2023-01-24 International Business Machines Corporation Fin top hard mask formation after wafer flipping process
US11894433B2 (en) 2021-06-22 2024-02-06 International Business Machines Corporation Method and structure to improve stacked FET bottom EPI contact
US11764259B2 (en) 2021-07-23 2023-09-19 International Business Machines Corporation Vertical field-effect transistor with dielectric fin extension
US11742354B2 (en) 2021-09-23 2023-08-29 International Business Machines Corporation Top epitaxial layer and contact for VTFET
US11830774B2 (en) 2021-09-23 2023-11-28 International Business Machines Corporation Buried contact through fin-to-fin space for vertical transport field effect transistor
US11949011B2 (en) 2021-11-30 2024-04-02 International Business Machines Corporation Vertical transistor with gate encapsulation layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855582B1 (en) * 2003-06-12 2005-02-15 Advanced Micro Devices, Inc. FinFET gate formation using reverse trim and oxide polish

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017504A (en) * 1986-12-01 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Vertical type MOS transistor and method of formation thereof
US4902641A (en) * 1987-07-31 1990-02-20 Motorola, Inc. Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure
JPH01232755A (en) * 1988-03-11 1989-09-18 Fujitsu Ltd Semiconductor device and manufacture thereof
EP0333426B1 (en) 1988-03-15 1996-07-10 Kabushiki Kaisha Toshiba Dynamic RAM
US5208172A (en) * 1992-03-02 1993-05-04 Motorola, Inc. Method for forming a raised vertical transistor
US5581101A (en) * 1995-01-03 1996-12-03 International Business Machines Corporation FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures
US6060746A (en) * 1997-02-11 2000-05-09 International Business Machines Corporation Power transistor having vertical FETs and method for making same
US5973356A (en) * 1997-07-08 1999-10-26 Micron Technology, Inc. Ultra high density flash memory
US6376312B1 (en) * 2001-03-26 2002-04-23 Advanced Micro Devices, Inc. Formation of non-volatile memory device comprised of an array of vertical field effect transistor structures
KR100401130B1 (en) 2001-03-28 2003-10-10 한국전자통신연구원 Ultra small size vertical MOSFET device and fabrication method of the MOSFET device
US6798017B2 (en) * 2001-08-31 2004-09-28 International Business Machines Corporation Vertical dual gate field effect transistor
US6680508B1 (en) * 2002-08-28 2004-01-20 Micron Technology, Inc. Vertical floating gate transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855582B1 (en) * 2003-06-12 2005-02-15 Advanced Micro Devices, Inc. FinFET gate formation using reverse trim and oxide polish

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8734583B2 (en) 2006-04-04 2014-05-27 Micron Technology, Inc. Grown nanofin transistors
US8823006B2 (en) 2006-04-04 2014-09-02 Micron Technology, Inc. Nanofin transistors with crystalline semiconductor fins
US9087730B2 (en) 2006-04-04 2015-07-21 Micron Technology, Inc. DRAM with nanofin transistors

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