WO2005082018A3 - Opc simulation model using socs decomposition of edge fragments - Google Patents

Opc simulation model using socs decomposition of edge fragments Download PDF

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Publication number
WO2005082018A3
WO2005082018A3 PCT/US2005/005940 US2005005940W WO2005082018A3 WO 2005082018 A3 WO2005082018 A3 WO 2005082018A3 US 2005005940 W US2005005940 W US 2005005940W WO 2005082018 A3 WO2005082018 A3 WO 2005082018A3
Authority
WO
WIPO (PCT)
Prior art keywords
decomposition
simulation model
edge fragments
socs
opc simulation
Prior art date
Application number
PCT/US2005/005940
Other languages
French (fr)
Other versions
WO2005082018A2 (en
Inventor
Konstantinos Adam
Original Assignee
Mentor Graphics Corp
Konstantinos Adam
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mentor Graphics Corp, Konstantinos Adam filed Critical Mentor Graphics Corp
Publication of WO2005082018A2 publication Critical patent/WO2005082018A2/en
Publication of WO2005082018A3 publication Critical patent/WO2005082018A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A system for estimating image intensity within a window area of a wafer using a SOCS decomposition to determine the horizontal and vertical edge fragments that correspond to objects within the window area. Results of the decomposition are used to access lookup tables that store data related to the contribution of the edge fragment to the image intensity. Each lookup table stores data that are computed under a different illumination and feature fabrication or placement conditions.
PCT/US2005/005940 2004-02-24 2005-02-24 Opc simulation model using socs decomposition of edge fragments WO2005082018A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US54712904P 2004-02-24 2004-02-24
US60/547,129 2004-02-24
US59156004P 2004-07-26 2004-07-26
US60/591,560 2004-07-26
US11/061,765 2005-02-17
US11/061,765 US7539954B2 (en) 2004-02-24 2005-02-17 OPC simulation model using SOCS decomposition of edge fragments

Publications (2)

Publication Number Publication Date
WO2005082018A2 WO2005082018A2 (en) 2005-09-09
WO2005082018A3 true WO2005082018A3 (en) 2009-04-16

Family

ID=34916188

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/005940 WO2005082018A2 (en) 2004-02-24 2005-02-24 Opc simulation model using socs decomposition of edge fragments

Country Status (2)

Country Link
US (1) US7539954B2 (en)
WO (1) WO2005082018A2 (en)

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US7475382B2 (en) * 2005-02-24 2009-01-06 Synopsys, Inc. Method and apparatus for determining an improved assist feature configuration in a mask layout
US20070253637A1 (en) * 2006-03-08 2007-11-01 Mentor Graphics Corp. Image intensity calculation using a sectored source map
US7836423B2 (en) * 2006-03-08 2010-11-16 Mentor Graphics Corporation Sum of coherent systems (SOCS) approximation based on object information
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US8413083B2 (en) * 2009-05-13 2013-04-02 Globalfoundries Singapore Pte. Ltd. Mask system employing substantially circular optical proximity correction target and method of manufacture thereof
US9507250B2 (en) * 2009-12-17 2016-11-29 International Business Machines Corporation Optical proximity correction for improved electrical characteristics
US8331646B2 (en) 2009-12-23 2012-12-11 International Business Machines Corporation Optical proximity correction for transistors using harmonic mean of gate length
US8415077B2 (en) 2010-08-13 2013-04-09 International Business Machines Corporation Simultaneous optical proximity correction and decomposition for double exposure lithography
US8769445B2 (en) 2010-09-22 2014-07-01 International Business Machines Corporation Method for determining mask operation activities
KR102466464B1 (en) * 2015-08-03 2022-11-14 삼성전자주식회사 Method of providing initial bias value for optical proximity correction, and mask producing method with optical proximity correction based on the initial bias value
US10496780B1 (en) 2016-10-19 2019-12-03 Mentor Graphics Corporation Dynamic model generation for lithographic simulation

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Patent Citations (4)

* Cited by examiner, † Cited by third party
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US20030048458A1 (en) * 2001-06-26 2003-03-13 Walter Mieher Method for determining lithographic focus and exposure
US20030103189A1 (en) * 2001-09-11 2003-06-05 The Regents Of The University Of California Characterizing aberrations in an imaging lens and applications to visual testing and integrated circuit mask analysis
US20060273255A1 (en) * 2001-11-26 2006-12-07 Astrazeneca Ab Method for forming the image in millimetre and sub-millimetre wave band (variants), system for forming the image in millimetre and sub-millimeter wave band (variants), diffuser light (variants) and transceiver (variants)
US20050105180A1 (en) * 2003-11-18 2005-05-19 Jeff Mackey Polarized reticle, photolithography system, and method of forming a pattern using a polarized reticle in conjunction with polarized light

Also Published As

Publication number Publication date
US7539954B2 (en) 2009-05-26
US20050198598A1 (en) 2005-09-08
WO2005082018A2 (en) 2005-09-09

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