WO2005082063A3 - Long range corrections in integrated circuit layout designs - Google Patents
Long range corrections in integrated circuit layout designs Download PDFInfo
- Publication number
- WO2005082063A3 WO2005082063A3 PCT/US2005/006168 US2005006168W WO2005082063A3 WO 2005082063 A3 WO2005082063 A3 WO 2005082063A3 US 2005006168 W US2005006168 W US 2005006168W WO 2005082063 A3 WO2005082063 A3 WO 2005082063A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- integrated circuit
- flare
- long range
- circuit layout
- layout designs
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/18—Manufacturability analysis or optimisation for manufacturability
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05723855A EP1723568A4 (en) | 2004-02-25 | 2005-02-25 | Long range corrections in integrated circuit layout designs |
JP2007501020A JP4993602B2 (en) | 2004-02-25 | 2005-02-25 | Long-range correction in integrated circuit layout design |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54748404P | 2004-02-25 | 2004-02-25 | |
US60/547,484 | 2004-02-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005082063A2 WO2005082063A2 (en) | 2005-09-09 |
WO2005082063A3 true WO2005082063A3 (en) | 2006-04-27 |
Family
ID=34910901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/006168 WO2005082063A2 (en) | 2004-02-25 | 2005-02-25 | Long range corrections in integrated circuit layout designs |
Country Status (4)
Country | Link |
---|---|
US (1) | US7234130B2 (en) |
EP (1) | EP1723568A4 (en) |
JP (2) | JP4993602B2 (en) |
WO (1) | WO2005082063A2 (en) |
Families Citing this family (27)
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JP2005209850A (en) * | 2004-01-22 | 2005-08-04 | Toshiba Corp | Design system and manufacturing system of semiconductor device |
US7861207B2 (en) * | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
US7325223B2 (en) * | 2005-03-31 | 2008-01-29 | Intel Corporation | Modification of pixelated photolithography masks based on electric fields |
KR100673014B1 (en) * | 2005-10-28 | 2007-01-24 | 삼성전자주식회사 | Method of fabricating photomask |
KR100780775B1 (en) * | 2006-11-24 | 2007-11-30 | 주식회사 하이닉스반도체 | Method for fabricating self assembled dummy pattern for semiconductor device by using circuitry layout |
JP5149307B2 (en) * | 2007-01-18 | 2013-02-20 | 株式会社ニコン | Scanner-based optical proximity correction system and method of use |
US7805699B2 (en) * | 2007-10-11 | 2010-09-28 | Mentor Graphics Corporation | Shape-based photolithographic model calibration |
EP2110707A1 (en) * | 2008-04-19 | 2009-10-21 | Imec | Flare mapping in lithography |
US7844938B2 (en) * | 2008-04-25 | 2010-11-30 | International Business Machines Corporation | Data correcting hierarchical integrated circuit layout accommodating compensate for long range critical dimension variation |
US7966582B2 (en) * | 2008-05-23 | 2011-06-21 | Synopsys, Inc. | Method and apparatus for modeling long-range EUVL flare |
KR101552689B1 (en) * | 2009-04-08 | 2015-09-14 | 삼성전자주식회사 | Flare evlauation method |
JP5491777B2 (en) * | 2009-06-19 | 2014-05-14 | 株式会社東芝 | Flare correction method and flare correction program |
JP5407623B2 (en) * | 2009-07-16 | 2014-02-05 | 富士通セミコンダクター株式会社 | Mask pattern evaluation method, mask pattern correction method, and mask pattern generator |
JP5556505B2 (en) * | 2010-08-27 | 2014-07-23 | 富士通セミコンダクター株式会社 | Mask pattern correction method and mask pattern correction apparatus |
NL2007287A (en) | 2010-09-14 | 2012-03-15 | Asml Netherlands Bv | Correction for flare effects in lithography system. |
JP2012156441A (en) | 2011-01-28 | 2012-08-16 | Toshiba Corp | Flare value calculation method, flare correction method, flare value calculation program, and manufacturing method of semiconductor device |
JP2012164767A (en) | 2011-02-04 | 2012-08-30 | Toshiba Corp | Flare prediction method, photomask fabrication method, semiconductor device manufacturing method, and flare prediction program |
JP5575024B2 (en) | 2011-03-22 | 2014-08-20 | 株式会社東芝 | Mask pattern correction method, mask pattern correction program, and semiconductor device manufacturing method |
JP5853513B2 (en) * | 2011-09-09 | 2016-02-09 | 富士通セミコンダクター株式会社 | Mask pattern correction apparatus, mask pattern correction method, and mask pattern correction program |
JP2013062433A (en) * | 2011-09-14 | 2013-04-04 | Toshiba Corp | Pattern generating method, pattern formation method, and pattern generation program |
JP2013125906A (en) | 2011-12-15 | 2013-06-24 | Toshiba Corp | Flare map calculation method, flare map calculation program, and method of manufacturing semiconductor device |
US9355201B2 (en) | 2012-08-17 | 2016-05-31 | Mentor Graphics Corporation | Density-based integrated circuit design adjustment |
US8627245B1 (en) * | 2012-08-28 | 2014-01-07 | International Business Machines Corporation | Density balancing in multiple patterning lithography using integrated circuit layout fill |
US8647893B1 (en) | 2012-08-28 | 2014-02-11 | International Business Machines Corporation | Method for post decomposition density balancing in integrated circuit layouts, related system and program product |
US8975195B2 (en) * | 2013-02-01 | 2015-03-10 | GlobalFoundries, Inc. | Methods for optical proximity correction in the design and fabrication of integrated circuits |
US8856695B1 (en) * | 2013-03-14 | 2014-10-07 | Samsung Electronics Co., Ltd. | Method for generating post-OPC layout in consideration of top loss of etch mask layer |
US9977325B2 (en) * | 2015-10-20 | 2018-05-22 | International Business Machines Corporation | Modifying design layer of integrated circuit (IC) |
Citations (5)
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US4989156A (en) * | 1985-08-23 | 1991-01-29 | Kabushiki Kaisha Toshiba | Method of drawing a pattern on wafer with charged beam |
US6056785A (en) * | 1997-05-28 | 2000-05-02 | Mitsubishi Electric Semiconductor Software Co., Ltd. | Electron-beam data generating apparatus |
US6728946B1 (en) * | 2000-10-31 | 2004-04-27 | Franklin M. Schellenberg | Method and apparatus for creating photolithographic masks |
US6815129B1 (en) * | 2000-09-26 | 2004-11-09 | Euv Llc | Compensation of flare-induced CD changes EUVL |
US20050050490A1 (en) * | 2003-09-01 | 2005-03-03 | Fujitsu Limited | Method and equipment for simulation |
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FR2590376A1 (en) | 1985-11-21 | 1987-05-22 | Dumant Jean Marc | MASKING METHOD AND MASK USED |
JP2531114B2 (en) | 1993-10-29 | 1996-09-04 | 日本電気株式会社 | Light intensity distribution analysis method |
US5646870A (en) | 1995-02-13 | 1997-07-08 | Advanced Micro Devices, Inc. | Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers |
US5682323A (en) | 1995-03-06 | 1997-10-28 | Lsi Logic Corporation | System and method for performing optical proximity correction on macrocell libraries |
JP3409493B2 (en) | 1995-03-13 | 2003-05-26 | ソニー株式会社 | Mask pattern correction method and correction device |
JP3934719B2 (en) | 1995-12-22 | 2007-06-20 | 株式会社東芝 | Optical proximity correction method |
US5723233A (en) | 1996-02-27 | 1998-03-03 | Lsi Logic Corporation | Optical proximity correction method and apparatus |
US6269472B1 (en) | 1996-02-27 | 2001-07-31 | Lsi Logic Corporation | Optical proximity correction method and apparatus |
KR100257710B1 (en) | 1996-12-27 | 2000-06-01 | 김영환 | Simulation method of lithography process |
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JP2004294977A (en) * | 2003-03-28 | 2004-10-21 | Nikon Corp | Method for forming pattern, pattern forming system, method for manufacturing mask, mask manufacturing system, mask, exposure method, exposure apparatus, and method for manufacturing device |
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US7010776B2 (en) * | 2003-10-27 | 2006-03-07 | International Business Machines Corporation | Extending the range of lithographic simulation integrals |
-
2005
- 2005-02-24 US US11/066,597 patent/US7234130B2/en active Active
- 2005-02-25 EP EP05723855A patent/EP1723568A4/en not_active Withdrawn
- 2005-02-25 WO PCT/US2005/006168 patent/WO2005082063A2/en active Application Filing
- 2005-02-25 JP JP2007501020A patent/JP4993602B2/en active Active
-
2012
- 2012-02-03 JP JP2012021471A patent/JP5619795B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4989156A (en) * | 1985-08-23 | 1991-01-29 | Kabushiki Kaisha Toshiba | Method of drawing a pattern on wafer with charged beam |
US6056785A (en) * | 1997-05-28 | 2000-05-02 | Mitsubishi Electric Semiconductor Software Co., Ltd. | Electron-beam data generating apparatus |
US6815129B1 (en) * | 2000-09-26 | 2004-11-09 | Euv Llc | Compensation of flare-induced CD changes EUVL |
US6728946B1 (en) * | 2000-10-31 | 2004-04-27 | Franklin M. Schellenberg | Method and apparatus for creating photolithographic masks |
US20050050490A1 (en) * | 2003-09-01 | 2005-03-03 | Fujitsu Limited | Method and equipment for simulation |
Non-Patent Citations (1)
Title |
---|
See also references of EP1723568A4 * |
Also Published As
Publication number | Publication date |
---|---|
US7234130B2 (en) | 2007-06-19 |
JP4993602B2 (en) | 2012-08-08 |
JP2012089892A (en) | 2012-05-10 |
EP1723568A2 (en) | 2006-11-22 |
WO2005082063A2 (en) | 2005-09-09 |
JP5619795B2 (en) | 2014-11-05 |
JP2007524255A (en) | 2007-08-23 |
EP1723568A4 (en) | 2010-06-02 |
US20050216878A1 (en) | 2005-09-29 |
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