WO2005082063A3 - Long range corrections in integrated circuit layout designs - Google Patents

Long range corrections in integrated circuit layout designs Download PDF

Info

Publication number
WO2005082063A3
WO2005082063A3 PCT/US2005/006168 US2005006168W WO2005082063A3 WO 2005082063 A3 WO2005082063 A3 WO 2005082063A3 US 2005006168 W US2005006168 W US 2005006168W WO 2005082063 A3 WO2005082063 A3 WO 2005082063A3
Authority
WO
WIPO (PCT)
Prior art keywords
integrated circuit
flare
long range
circuit layout
layout designs
Prior art date
Application number
PCT/US2005/006168
Other languages
French (fr)
Other versions
WO2005082063A2 (en
Inventor
James Word
Nicolas B Cobb
Yuri Granik
Original Assignee
Mentor Graphics Corp
James Word
Nicolas B Cobb
Yuri Granik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mentor Graphics Corp, James Word, Nicolas B Cobb, Yuri Granik filed Critical Mentor Graphics Corp
Priority to EP05723855A priority Critical patent/EP1723568A4/en
Priority to JP2007501020A priority patent/JP4993602B2/en
Publication of WO2005082063A2 publication Critical patent/WO2005082063A2/en
Publication of WO2005082063A3 publication Critical patent/WO2005082063A3/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18Manufacturability analysis or optimisation for manufacturability
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Abstract

A method and apparatus for compensating for flare intensity variations across an integrated circuit. A layout description for a physical layer of an integrated circuit or p on thereof is divided into a number of regions such as adjacent tiles. An estimate of the flare intensity in each region is determined. The flare intensity values calculated are divided into a number of ranges. In one embodiment, a data layer in a layout description is defined for each range of flare values computed . Features to be printed in an area having a flare value in a particular range are associated with a corresponding additional date layer. The features associated with each additional data layer are analyzed with a resolution enhancement technique that is selected or adjusted to compensate for differing flare values occurring in the integrated circuit.
PCT/US2005/006168 2004-02-25 2005-02-25 Long range corrections in integrated circuit layout designs WO2005082063A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05723855A EP1723568A4 (en) 2004-02-25 2005-02-25 Long range corrections in integrated circuit layout designs
JP2007501020A JP4993602B2 (en) 2004-02-25 2005-02-25 Long-range correction in integrated circuit layout design

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54748404P 2004-02-25 2004-02-25
US60/547,484 2004-02-25

Publications (2)

Publication Number Publication Date
WO2005082063A2 WO2005082063A2 (en) 2005-09-09
WO2005082063A3 true WO2005082063A3 (en) 2006-04-27

Family

ID=34910901

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/006168 WO2005082063A2 (en) 2004-02-25 2005-02-25 Long range corrections in integrated circuit layout designs

Country Status (4)

Country Link
US (1) US7234130B2 (en)
EP (1) EP1723568A4 (en)
JP (2) JP4993602B2 (en)
WO (1) WO2005082063A2 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209850A (en) * 2004-01-22 2005-08-04 Toshiba Corp Design system and manufacturing system of semiconductor device
US7861207B2 (en) * 2004-02-25 2010-12-28 Mentor Graphics Corporation Fragmentation point and simulation site adjustment for resolution enhancement techniques
US7325223B2 (en) * 2005-03-31 2008-01-29 Intel Corporation Modification of pixelated photolithography masks based on electric fields
KR100673014B1 (en) * 2005-10-28 2007-01-24 삼성전자주식회사 Method of fabricating photomask
KR100780775B1 (en) * 2006-11-24 2007-11-30 주식회사 하이닉스반도체 Method for fabricating self assembled dummy pattern for semiconductor device by using circuitry layout
JP5149307B2 (en) * 2007-01-18 2013-02-20 株式会社ニコン Scanner-based optical proximity correction system and method of use
US7805699B2 (en) * 2007-10-11 2010-09-28 Mentor Graphics Corporation Shape-based photolithographic model calibration
EP2110707A1 (en) * 2008-04-19 2009-10-21 Imec Flare mapping in lithography
US7844938B2 (en) * 2008-04-25 2010-11-30 International Business Machines Corporation Data correcting hierarchical integrated circuit layout accommodating compensate for long range critical dimension variation
US7966582B2 (en) * 2008-05-23 2011-06-21 Synopsys, Inc. Method and apparatus for modeling long-range EUVL flare
KR101552689B1 (en) * 2009-04-08 2015-09-14 삼성전자주식회사 Flare evlauation method
JP5491777B2 (en) * 2009-06-19 2014-05-14 株式会社東芝 Flare correction method and flare correction program
JP5407623B2 (en) * 2009-07-16 2014-02-05 富士通セミコンダクター株式会社 Mask pattern evaluation method, mask pattern correction method, and mask pattern generator
JP5556505B2 (en) * 2010-08-27 2014-07-23 富士通セミコンダクター株式会社 Mask pattern correction method and mask pattern correction apparatus
NL2007287A (en) 2010-09-14 2012-03-15 Asml Netherlands Bv Correction for flare effects in lithography system.
JP2012156441A (en) 2011-01-28 2012-08-16 Toshiba Corp Flare value calculation method, flare correction method, flare value calculation program, and manufacturing method of semiconductor device
JP2012164767A (en) 2011-02-04 2012-08-30 Toshiba Corp Flare prediction method, photomask fabrication method, semiconductor device manufacturing method, and flare prediction program
JP5575024B2 (en) 2011-03-22 2014-08-20 株式会社東芝 Mask pattern correction method, mask pattern correction program, and semiconductor device manufacturing method
JP5853513B2 (en) * 2011-09-09 2016-02-09 富士通セミコンダクター株式会社 Mask pattern correction apparatus, mask pattern correction method, and mask pattern correction program
JP2013062433A (en) * 2011-09-14 2013-04-04 Toshiba Corp Pattern generating method, pattern formation method, and pattern generation program
JP2013125906A (en) 2011-12-15 2013-06-24 Toshiba Corp Flare map calculation method, flare map calculation program, and method of manufacturing semiconductor device
US9355201B2 (en) 2012-08-17 2016-05-31 Mentor Graphics Corporation Density-based integrated circuit design adjustment
US8627245B1 (en) * 2012-08-28 2014-01-07 International Business Machines Corporation Density balancing in multiple patterning lithography using integrated circuit layout fill
US8647893B1 (en) 2012-08-28 2014-02-11 International Business Machines Corporation Method for post decomposition density balancing in integrated circuit layouts, related system and program product
US8975195B2 (en) * 2013-02-01 2015-03-10 GlobalFoundries, Inc. Methods for optical proximity correction in the design and fabrication of integrated circuits
US8856695B1 (en) * 2013-03-14 2014-10-07 Samsung Electronics Co., Ltd. Method for generating post-OPC layout in consideration of top loss of etch mask layer
US9977325B2 (en) * 2015-10-20 2018-05-22 International Business Machines Corporation Modifying design layer of integrated circuit (IC)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989156A (en) * 1985-08-23 1991-01-29 Kabushiki Kaisha Toshiba Method of drawing a pattern on wafer with charged beam
US6056785A (en) * 1997-05-28 2000-05-02 Mitsubishi Electric Semiconductor Software Co., Ltd. Electron-beam data generating apparatus
US6728946B1 (en) * 2000-10-31 2004-04-27 Franklin M. Schellenberg Method and apparatus for creating photolithographic masks
US6815129B1 (en) * 2000-09-26 2004-11-09 Euv Llc Compensation of flare-induced CD changes EUVL
US20050050490A1 (en) * 2003-09-01 2005-03-03 Fujitsu Limited Method and equipment for simulation

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2590376A1 (en) 1985-11-21 1987-05-22 Dumant Jean Marc MASKING METHOD AND MASK USED
JP2531114B2 (en) 1993-10-29 1996-09-04 日本電気株式会社 Light intensity distribution analysis method
US5646870A (en) 1995-02-13 1997-07-08 Advanced Micro Devices, Inc. Method for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafers
US5682323A (en) 1995-03-06 1997-10-28 Lsi Logic Corporation System and method for performing optical proximity correction on macrocell libraries
JP3409493B2 (en) 1995-03-13 2003-05-26 ソニー株式会社 Mask pattern correction method and correction device
JP3934719B2 (en) 1995-12-22 2007-06-20 株式会社東芝 Optical proximity correction method
US5723233A (en) 1996-02-27 1998-03-03 Lsi Logic Corporation Optical proximity correction method and apparatus
US6269472B1 (en) 1996-02-27 2001-07-31 Lsi Logic Corporation Optical proximity correction method and apparatus
KR100257710B1 (en) 1996-12-27 2000-06-01 김영환 Simulation method of lithography process
US6016357A (en) 1997-06-16 2000-01-18 International Business Machines Corporation Feedback method to repair phase shift masks
US6453452B1 (en) 1997-12-12 2002-09-17 Numerical Technologies, Inc. Method and apparatus for data hierarchy maintenance in a system for mask description
US6370679B1 (en) 1997-09-17 2002-04-09 Numerical Technologies, Inc. Data hierarchy layout correction and verification method and apparatus
US6243855B1 (en) 1997-09-30 2001-06-05 Kabushiki Kaisha Toshiba Mask data design method
US6499003B2 (en) 1998-03-03 2002-12-24 Lsi Logic Corporation Method and apparatus for application of proximity correction with unitary segmentation
US6128067A (en) 1998-04-28 2000-10-03 Kabushiki Kaisha Toshiba Correcting method and correcting system for mask pattern
JP3223965B2 (en) * 1998-07-10 2001-10-29 日本電気株式会社 Calculation method of chemically amplified resist shape and recording medium
US6120952A (en) 1998-10-01 2000-09-19 Micron Technology, Inc. Methods of reducing proximity effects in lithographic processes
US6263299B1 (en) 1999-01-19 2001-07-17 Lsi Logic Corporation Geometric aerial image simulation
US6249904B1 (en) 1999-04-30 2001-06-19 Nicolas Bailey Cobb Method and apparatus for submicron IC design using edge fragment tagging to correct edge placement distortion
US6301697B1 (en) 1999-04-30 2001-10-09 Nicolas B. Cobb Streamlined IC mask layout optical and process correction through correction reuse
US6467076B1 (en) 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
US6187483B1 (en) 1999-05-28 2001-02-13 Advanced Micro Devices, Inc. Mask quality measurements by fourier space analysis
US6317859B1 (en) 1999-06-09 2001-11-13 International Business Machines Corporation Method and system for determining critical area for circuit layouts
JP2001222097A (en) * 2000-02-09 2001-08-17 Fujitsu Ltd Phase shift mask, and method of manufacturing the same
US6665845B1 (en) 2000-02-25 2003-12-16 Sun Microsystems, Inc. System and method for topology based noise estimation of submicron integrated circuit designs
US6584609B1 (en) 2000-02-28 2003-06-24 Numerical Technologies, Inc. Method and apparatus for mixed-mode optical proximity correction
US6453457B1 (en) 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6835507B2 (en) * 2001-08-08 2004-12-28 Samsung Electronics Co., Ltd. Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare
US6625802B2 (en) * 2002-02-01 2003-09-23 Intel Corporation Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography
SG125911A1 (en) * 2002-03-25 2006-10-30 Asml Masktools Bv Method and apparatus for decomposing semiconductordevice patterns into phase and chrome regions for chromeless phase lithography
JP4365566B2 (en) * 2002-07-31 2009-11-18 富士通マイクロエレクトロニクス株式会社 Light intensity simulation method and photomask design method
JP4190227B2 (en) * 2002-07-31 2008-12-03 富士通マイクロエレクトロニクス株式会社 Photomask, method for designing the same, and method for manufacturing a semiconductor device using the same
JP4051240B2 (en) * 2002-07-31 2008-02-20 富士通株式会社 Test photomask, flare evaluation method, and flare correction method
JP4329333B2 (en) * 2002-11-13 2009-09-09 ソニー株式会社 Exposure mask correction method
US6989229B2 (en) 2003-03-27 2006-01-24 Freescale Semiconductor, Inc. Non-resolving mask tiling method for flare reduction
JP2004294977A (en) * 2003-03-28 2004-10-21 Nikon Corp Method for forming pattern, pattern forming system, method for manufacturing mask, mask manufacturing system, mask, exposure method, exposure apparatus, and method for manufacturing device
US7343271B2 (en) * 2003-10-27 2008-03-11 International Business Machines Corporation Incorporation of a phase map into fast model-based optical proximity correction simulation kernels to account for near and mid-range flare
US7010776B2 (en) * 2003-10-27 2006-03-07 International Business Machines Corporation Extending the range of lithographic simulation integrals

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989156A (en) * 1985-08-23 1991-01-29 Kabushiki Kaisha Toshiba Method of drawing a pattern on wafer with charged beam
US6056785A (en) * 1997-05-28 2000-05-02 Mitsubishi Electric Semiconductor Software Co., Ltd. Electron-beam data generating apparatus
US6815129B1 (en) * 2000-09-26 2004-11-09 Euv Llc Compensation of flare-induced CD changes EUVL
US6728946B1 (en) * 2000-10-31 2004-04-27 Franklin M. Schellenberg Method and apparatus for creating photolithographic masks
US20050050490A1 (en) * 2003-09-01 2005-03-03 Fujitsu Limited Method and equipment for simulation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1723568A4 *

Also Published As

Publication number Publication date
US7234130B2 (en) 2007-06-19
JP4993602B2 (en) 2012-08-08
JP2012089892A (en) 2012-05-10
EP1723568A2 (en) 2006-11-22
WO2005082063A2 (en) 2005-09-09
JP5619795B2 (en) 2014-11-05
JP2007524255A (en) 2007-08-23
EP1723568A4 (en) 2010-06-02
US20050216878A1 (en) 2005-09-29

Similar Documents

Publication Publication Date Title
WO2005082063A3 (en) Long range corrections in integrated circuit layout designs
WO2006073800A3 (en) Method and apparatus for proximate cmos pixels
WO2006016317A3 (en) Segmentation based on region-competitive deformable mesh adaptation
WO2006084685A3 (en) Method for producing a multilayer body and corresponding multilayer body
WO2008003084A3 (en) Computer-implemented methods and systems for determining different process windows for a wafer printing process for different reticle designs
WO2004093148A3 (en) Effective proximity effect correction methodology
EP1862042A4 (en) Metallic pattern forming method, metallic pattern obtained thereby, printed wiring board using the same, and tft wiring board using the same
WO2006031863A3 (en) System and method for editing an electronic document of text and graphic objects
WO2007103494A3 (en) Method and system for performing image re-identification
TW200705232A (en) System and method for designing mask layout
WO2008020080A3 (en) Method of superimposing an image onto another, method of personalizing a data carrier using the image superimposing method and a personalized data carrier
WO2007044630A3 (en) Method and manufacture of multiple photomask patterns and computer readable medium
TW200710693A (en) Method and apparatus for placing assist features
TW200631169A (en) Technique for increased exposure range in image sensors
TW200519526A (en) Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
WO2007130983A3 (en) Modified edible substrates suitable for printing
TWI267309B (en) Pixel signal processing device and pixel signal processing method
DE602005019504D1 (en) Image forming apparatus and image forming method
WO2007047930A3 (en) Electroluminescent panel
WO2005078608A3 (en) A method and apparatus for minimising the influence of a digital sub-circuit on at least partially digital circuits
MX2008013661A (en) Metal pallet.
TW200641497A (en) Electronic ink display device and method for manufacturing the same
WO2006024441A3 (en) Multilayer body with differently microstructured areas provided with an electroconductive coating
WO2007041701A3 (en) Mask-patterns including intentional breaks
WO2008033760A3 (en) Masking a visual defect

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 2007501020

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2005723855

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 2005723855

Country of ref document: EP