WO2005104133A3 - High density data storage - Google Patents

High density data storage Download PDF

Info

Publication number
WO2005104133A3
WO2005104133A3 PCT/US2005/012788 US2005012788W WO2005104133A3 WO 2005104133 A3 WO2005104133 A3 WO 2005104133A3 US 2005012788 W US2005012788 W US 2005012788W WO 2005104133 A3 WO2005104133 A3 WO 2005104133A3
Authority
WO
WIPO (PCT)
Prior art keywords
media
resolved
data storage
high density
curvature
Prior art date
Application number
PCT/US2005/012788
Other languages
French (fr)
Other versions
WO2005104133B1 (en
WO2005104133A2 (en
Inventor
Thomas F Rust
Robert N Stark
Thomas L Noggle
Daniel F Cribbs
Original Assignee
Nanochip Inc
Thomas F Rust
Robert N Stark
Thomas L Noggle
Daniel F Cribbs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/004,153 external-priority patent/US7379412B2/en
Priority claimed from US11/003,541 external-priority patent/US20050243592A1/en
Priority claimed from US11/003,955 external-priority patent/US7301887B2/en
Priority claimed from US11/004,709 external-priority patent/US20050243660A1/en
Priority claimed from US11/003,953 external-priority patent/US20050232061A1/en
Application filed by Nanochip Inc, Thomas F Rust, Robert N Stark, Thomas L Noggle, Daniel F Cribbs filed Critical Nanochip Inc
Priority to JP2007508553A priority Critical patent/JP2007533162A/en
Priority to EP05736318A priority patent/EP1756808A2/en
Publication of WO2005104133A2 publication Critical patent/WO2005104133A2/en
Publication of WO2005104133A3 publication Critical patent/WO2005104133A3/en
Publication of WO2005104133B1 publication Critical patent/WO2005104133B1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

Abstract

Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
PCT/US2005/012788 2004-04-16 2005-04-15 High density data storage WO2005104133A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007508553A JP2007533162A (en) 2004-04-16 2005-04-15 Method for writing and reading highly resolved domains for high density data storage
EP05736318A EP1756808A2 (en) 2004-04-16 2005-04-15 Methods for writing and reading highly resolved domains for high density data storage

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US56312304P 2004-04-16 2004-04-16
US60/563,123 2004-04-16
US11/004,709 2004-12-03
US11/004,153 US7379412B2 (en) 2004-04-16 2004-12-03 Methods for writing and reading highly resolved domains for high density data storage
US11/003,541 US20050243592A1 (en) 2004-04-16 2004-12-03 High density data storage device having eraseable bit cells
US11/003,955 US7301887B2 (en) 2004-04-16 2004-12-03 Methods for erasing bit cells in a high density data storage device
US11/004,709 US20050243660A1 (en) 2004-04-16 2004-12-03 Methods for erasing bit cells in a high density data storage device
US11/003,955 2004-12-03
US11/004,153 2004-12-03
US11/003,953 2004-12-03
US11/003,541 2004-12-03
US11/003,953 US20050232061A1 (en) 2004-04-16 2004-12-03 Systems for writing and reading highly resolved domains for high density data storage

Publications (3)

Publication Number Publication Date
WO2005104133A2 WO2005104133A2 (en) 2005-11-03
WO2005104133A3 true WO2005104133A3 (en) 2006-12-28
WO2005104133B1 WO2005104133B1 (en) 2007-02-22

Family

ID=35197622

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/012788 WO2005104133A2 (en) 2004-04-16 2005-04-15 High density data storage

Country Status (3)

Country Link
EP (1) EP1756808A2 (en)
JP (1) JP2007533162A (en)
WO (1) WO2005104133A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7050320B1 (en) * 2004-12-23 2006-05-23 Intel Corporation MEMS probe based memory
FR2901909B1 (en) * 2006-05-30 2008-10-24 Commissariat Energie Atomique INSCRIPTIBLE AND MICROPOINT-READABLE DATA MEMORY, BUILD-IN STRUCTURE, AND METHOD OF MANUFACTURE

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557596A (en) * 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US6101164A (en) * 1994-01-31 2000-08-08 Matsushita Electric Industrial Co., Ltd. High density recording by a conductive probe contact with phase change recording layer
US6507552B2 (en) * 2000-12-01 2003-01-14 Hewlett-Packard Company AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6101164A (en) * 1994-01-31 2000-08-08 Matsushita Electric Industrial Co., Ltd. High density recording by a conductive probe contact with phase change recording layer
US5557596A (en) * 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US6507552B2 (en) * 2000-12-01 2003-01-14 Hewlett-Packard Company AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media

Also Published As

Publication number Publication date
WO2005104133B1 (en) 2007-02-22
EP1756808A2 (en) 2007-02-28
JP2007533162A (en) 2007-11-15
WO2005104133A2 (en) 2005-11-03

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