WO2005112123A3 - Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition - Google Patents

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Download PDF

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Publication number
WO2005112123A3
WO2005112123A3 PCT/US2005/015774 US2005015774W WO2005112123A3 WO 2005112123 A3 WO2005112123 A3 WO 2005112123A3 US 2005015774 W US2005015774 W US 2005015774W WO 2005112123 A3 WO2005112123 A3 WO 2005112123A3
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WO
WIPO (PCT)
Prior art keywords
fabrication
vapor deposition
chemical vapor
gallium nitride
indium gallium
Prior art date
Application number
PCT/US2005/015774
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French (fr)
Other versions
WO2005112123A2 (en
Inventor
Arpan Chakraborty
Benjamin A Haskell
Stacia Keller
James S Speck
Steven P Denbaars
Shuji Nakamura
Umesh K Mishra
Original Assignee
Univ California
Arpan Chakraborty
Benjamin A Haskell
Stacia Keller
James S Speck
Steven P Denbaars
Shuji Nakamura
Umesh K Mishra
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Arpan Chakraborty, Benjamin A Haskell, Stacia Keller, James S Speck, Steven P Denbaars, Shuji Nakamura, Umesh K Mishra filed Critical Univ California
Priority to EP05746303A priority Critical patent/EP1787330A4/en
Priority to JP2007513224A priority patent/JP5379973B2/en
Priority to KR1020117031683A priority patent/KR101365604B1/en
Publication of WO2005112123A2 publication Critical patent/WO2005112123A2/en
Publication of WO2005112123A3 publication Critical patent/WO2005112123A3/en

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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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    • H01S2304/00—Special growth methods for semiconductor lasers
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    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates

Abstract

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
PCT/US2005/015774 2004-05-10 2005-05-06 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition WO2005112123A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP05746303A EP1787330A4 (en) 2004-05-10 2005-05-06 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP2007513224A JP5379973B2 (en) 2004-05-10 2005-05-06 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic vapor phase epitaxy
KR1020117031683A KR101365604B1 (en) 2004-05-10 2005-05-06 Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56974904P 2004-05-10 2004-05-10
US60/569,749 2004-05-10

Publications (2)

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WO2005112123A2 WO2005112123A2 (en) 2005-11-24
WO2005112123A3 true WO2005112123A3 (en) 2006-12-28

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PCT/US2005/015774 WO2005112123A2 (en) 2004-05-10 2005-05-06 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

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EP (1) EP1787330A4 (en)
JP (2) JP5379973B2 (en)
KR (2) KR20070013320A (en)
WO (1) WO2005112123A2 (en)

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TW200636823A (en) * 2005-02-21 2006-10-16 Kanagawa Kagaku Gijutsu Akad Method of forming indium gallium nitride (InGaN) layer and semiconductor device
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JP5077985B2 (en) * 2006-08-28 2012-11-21 シャープ株式会社 Method for forming nitride semiconductor layer
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Also Published As

Publication number Publication date
EP1787330A4 (en) 2011-04-13
JP2007537600A (en) 2007-12-20
JP2012209582A (en) 2012-10-25
JP5379973B2 (en) 2013-12-25
KR101365604B1 (en) 2014-02-20
KR20120008539A (en) 2012-01-30
KR20070013320A (en) 2007-01-30
EP1787330A2 (en) 2007-05-23
WO2005112123A2 (en) 2005-11-24

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