WO2005116772A1 - Apparatus for providing a pattern of polarization - Google Patents
Apparatus for providing a pattern of polarization Download PDFInfo
- Publication number
- WO2005116772A1 WO2005116772A1 PCT/EP2005/050981 EP2005050981W WO2005116772A1 WO 2005116772 A1 WO2005116772 A1 WO 2005116772A1 EP 2005050981 W EP2005050981 W EP 2005050981W WO 2005116772 A1 WO2005116772 A1 WO 2005116772A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polarization
- pane
- pattern
- pattern assembly
- light
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/06—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of fluids in transparent cells
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
Definitions
- the present invention relates to optical systems that provide light beams with polarization that varies along the cross section of the beam.
- the circuits are produced primarily by photolithography.
- the circuits are printed onto a semiconductor substrate by exposing a coating of radiation sensitive material to light.
- the radiation sensitive material is often referred to as a "photoresist" or just resist.
- Passing the light through a mask which may consist of a pattern of chrome or other opaque material formed on a transparent substrate, generates the desired circuit pattern.
- the mask may also be formed by a pattern of higher and lower regions etched into the surface of a transparent substrate, or some combination of the two techniques.
- the transmission and scattering at a mask then depends on the polarization of the light and features of the mask.
- reflections at the surfaces of lenses and mirrors are polarization dependent so that apodization and to a lesser degree the wave front of the projection optics ("P.O.") depend on polarization.
- the reflection from the surface of the resist depends on polarization, and this too is effectively a polarization dependent apodization.
- the rays diffracted from the reticle that are brought back together at the wafer need to interfere to produce an image (also called vector interference) .
- image also called vector interference
- a polarization pattern is needed such that different portions of an exposure beam have different polarizations (i.e., different polarization directions) . Desired polarization patterns include radial, tangential or other custom polarization patterns.
- a mosaic tile structure made up of many birefringent tiles. Each tile can polarize a corresponding section of an exposure beam in a particular direction. In this way, the mosaic of tiles can create a polarization pattern, such as a radial pattern, across a pupil. See, U.S. Pat. No. 6,191,880.
- Such a mosaic tile structure uses many tiles to provide the polarization pattern. This mosaic of tiles is complicated and difficult to manufacture.
- a sandwich structure may be needed to hold the individual tiles in place across the width of the exposure beam. This is disadvantageous as differential thermal expansion across the mosaic, especially in natural birefringent crystal material, can prevent optical contact and lead to apodization (i.e. undesired intensity variations) at the pupil.
- What is needed is a device that can provide polarization patterns, including radial and tangential patterns, without requiring excessively complicated mechanical structure.
- the present invention overcomes the above-mentioned problems and provides further advantages.
- a polarization pattern assembly produces a polarization pattern.
- a polarization pattern assembly includes a frame that supports a polarization pane in a central region of the frame.
- the polarization pane changes the polarization direction of light incident upon the polarization pane.
- the polarization pane comprises an optically active material.
- Different polarization patterns in a pupil of an illuminator can then be generated by illuminating the polarization pattern assembly with linearly polarized light at a horizontal or vertical orientation.
- These patterns include three-zone hybrid polarization patterns, low sigma linear patterns, radial dipole patterns, tangential dipole patterns, tangential quadrapole patterns, and radial quadrapole patterns.
- the polarization pane comprises an optically active crystal consisting of said optically active material and having at least one optical crystal—axis, wherein said one optical crystal axis .and a surface normal of said polarization pane are substantially parallel to each other.
- An angle between said optical crystal axis and a surface normal of said polarization pane is preferably less than 9 mrad.
- said polarization pane changes a direction of polarization of a light bundle consisting of a multitude of light rays with an angle distribution relative to the optical crystal axis, wherein said angle distribution has a maximum angle of incidence not exceeding 100 mrad, preferably not exceeding 50 mrad, and still more preferably not exceeding 25 mrad.
- the optically active crystal may e.g. comprise quartz, Te0 2 or AgGaS 2 .
- the polarization pane comprises an optically active liquid consisting of said optically active material and being enclosed in a housing, said housing being optically transparent to said light passing through the polarization pattern assembly.
- the polarization pane rotates the direction of polarization of light by approximately 90 degrees.
- the polarization pattern assembly comprises at least one region leaving a direction of polarization of light passing therethrough substantially unchanged.
- Such a design of the polarization pattern assembly enables an effective arrangement .in providing desired polarization patterns, as discussed below in more detail, as well as an economic use of the optically active material, which does not have to extend beyond the whole cross sectional area of the polarization pattern assembly.
- the polarization pattern assembly comprises on opposite sides of said polarization pane at least one pair of regions leaving a direction of polarization of light passing therethrough substantially unchanged.
- the changing of the polarization direction of light passing through said polarization pane is preferably constant along a cross sectional area of said polarization pane.
- the polarization pane may have the shape of one or more rectangular strips, which is particularly favourable with regard to a relatively simple manufacturing process.
- At least one polarization pane is coupled to said frame in a center region in between first and second outer regions within said frame, and the at least one polarization pane rotates the direction of polarization of light passing therethrough by approximately 90 degrees, whereby a polarization pattern can be obtained across the pupil of the illuminator, and the polarization pattern can include a pattern selected from a group including a three-zone hybrid polarization pattern, low sigma linear pattern, radial dipole pattern, tangential dipole pattern, tangential quadrapole pattern, and radial quadrapole patterns.
- a central opening is provided, with one pair of polarization panes being coupled to said frame on opposite sides of said opening, and with one pair of regions leaving a direction of polarization of light passing therethrough substantially unchanged being coupled to said frame on opposite sides of said opening and circumferentially displaced with respect to said pair of polarization panes.
- a polarized illuminator for a lithographic system includes a polarization pattern assembly.
- the polarization pattern assembly can be provided at or near a pupil plane or in any pupil space within the polarized illuminator.
- one or more beam shapers such as a diffractive optical element or mask, can be provided on a common optical axis before or after a polarization pattern assembly.
- a beam shaper in combination with the polarization pattern assembly can further facilitate the generation of polarization patterns according to the present invention.
- a polarization pattern assembly with a polarization pane can have a relatively simple structure yet is versatile.
- Such a polarization pattern assembly can produce a variety of polarization patterns by simply rotating the polarization pattern assembly relative to an incident beam, by rotating the direction of polarization of an incident beam, or by adding or modify a beam shaper.
- an optically active material in particular of an optically active crystal whose optical crystal axis is parallel to the surface normal of the polarization pane in the polarization pattern assembly, results in a smooth and continuous variation of the polarization direction of passing linear polarized light as a function of thickness of the optically active material. Since the change of polarization direction of passing linear polarized light due to the circular birefringence is proportional to the thickness of the traversed optically active material, abrupt changes of the polarization state are avoided, thereby keeping moderate any requirements to thickness tolerances and manufacturing accuracy of the polarization pane.
- a further advantage is realized for polarized illuminators in lithography as embodiments of the present invention can allow for a variety of polarization patterns at a particular pupil of interest.
- FIGs. 1A-1B are diagrams of a polarization pattern assembly according to an embodiment of the present invention.
- FIG. 1A is a top view of the polarization pattern assembly.
- FIG. IB is a side view of the polarization pattern assembly of FIG. 1A taken along line BB..
- FIG. 2A is a diagram illustrating three zones of polarization created along a cross-section of an incident light beam by a polarization pattern assembly according to an embodiment of the present invention.
- FIG. 2B is a diagram illustrating a three-zone hybrid polarization pattern created by a polarization pattern assembly illuminated with horizontally polarized incident light according to an embodiment of the present invention.
- FIG. 2C is a diagram illustrating a three-zone hybrid polarization pattern created by a polarization pattern assembly illuminated with vertically polarized incident light according to an embodiment of the present invention.
- FIG. 2D is a diagram further illustrating a beam shaper in combination with a polarization pattern assembly according to an embodiment of the present invention.
- FIGs. 3A, 3B, 4A, 4B, 5A, 5B, 6A, and 6B illustrate various polarization patterns that can be generated according to embodiments of the present invention.
- FIG. 7 is a diagram illustrating a polarized illuminator including a polarization pattern assembly in a lithographic system according to an embodiment of the present invention.
- FIGs. 8A-8B are diagrams of a polarization pattern assembly according to a further embodiment of the present invention.
- FIG. 8A is a top view of the polarization pattern assembly.
- FIG. 8B is a side view of the polarization pattern assembly of FIG. 8A taken along line BB.
- FIGs. 9A-9B are diagrams of a polarization pattern assembly according to a further embodiment of the present invention.
- FIG. 9A is a top view of the polarization pattern assembly.
- FIG. 9B is a side view of the polarization pattern assembly of FIG. 9A taken along line BB.
- FIGs. 10A-10B are diagrams of a polarization pattern assembly according to a further embodiment of the present invention.
- FIG. 10A is a top view of the polarization pattern assembly.
- FIG. 10B is a side view of the polarization pattern assembly of FIG. 10A taken along line BB.
- FIG. 11 is a schematic diagram illustrating how the plane of oscillation is rotated when a linearly polarized light ray propagates along the optical axis in an optically active crystal.
- FIGs. 1A-1B are diagrams of a polarization pattern assembly 100 according to a first embodiment of the present invention. As shown in FIG. 1A, polarization pattern assembly 100 includes a frame 110 that holds polarization pane 102 in a central region of frame 110.
- polarization pane 102 is made from a crystalline material showing circular birefringence, i.e. a so-called optical active material, for example but not limited to, crystalline quartz. Suited for this purpose are optically active crystals having at least one optical crystal axis and showing a sufficient transmittance in the desired wavelength regime being used. Suitable optically active materials, dependent on the wavelength of the radiation being used, comprise e.g. quartz, Te0 2 , and AgGaS 2 .
- Te0 2 works in a range of wavelengths from 1000 nm down to 300 nm
- AgGaS 2 works from 500 nm to 480 nm
- quartz from 800 nm below 193 nm and even down to 157 nm.
- the polarization pane may also comprise an optically active liquid being enclosed in a housing that is optically transparent to the desired radiation passing through the polarization pattern assembly.
- an optically active liquid being enclosed in a housing that is optically transparent to the desired radiation passing through the polarization pattern assembly.
- Such a liquid or solution is regarded as suitable if it exhibits a sufficient optical activity while also showing a sufficient transmittance in the desired wavelength regime being used.
- Suitable optically active liquids or solutions are sugar solution (which may be regularly refreshed if necessary) or tartaric acid.
- the crystalline material of polarization pane 102 is cut perpendicular to its optical crystal axis "OA", so that the latter is perpendicular to the surface of polarization pane 102 (i.e. parallel to its surface normal) . Consequently, the propagation direction of a normal incident linearly polarized light beam traversing the polarization pane .102 is parallel with the optical crystal axis "OA" of the optical active material.
- polarization pane 102 In traversing of linear polarized light through the optical active material of polarization pane 102, two circular waves (as components of the linear polarized light beam) get out- of-phase and appear to have rotated, after exit of polarization pane 102, by an angle of rotation depending on wavelength, temperature and thickness of the traversed optical active layer. Accordingly, polarization pane 102 can rotate the direction of polarization of light incident on the pane.
- Figure 11 shall serve to explain in more detail the function of optically active crystals, and in particular of polarization-modulating elements made from such crystals.
- Optically active crystals have at least one optical axis OA which is inherent in the crystal structure.
- the plane of oscillation of electrical field vector 801 is rotated by an angle ⁇ of proportionate magnitude as the distance d travelled by the light inside crystal 800.
- the proportionality factor between distance d and angle of rotation ⁇ is the specific rotation .
- the latter is a material-specific quantity and is dependent on the wavelength of the light rays propagating through the crystal.
- the specific rotation at a wavelength of 193nm was measured as (325.2 ⁇ ..0.5) °/mm; in synthetic quartz, the specific rotation at a wavelength of 193nm amounts to (323.1 ⁇ 0.5)°/mm. Both values are given for a temperature of 20°C.
- Tolerances in thickness "d" of less than roughly 1 % of polarization pane 102 have shown to be still acceptable and are lying within the range to achieve a net rotation of polarization direction of "substantially 90°".
- Plates of crystalline quartz having the above orientations and manufacturing tolerances are commercially available in sizes of e.g. (50*130)mm 2 , so that polarization pane 102 is realizable from one single piece thereby avoiding any undesired borders and enhanced design complexity.
- Regions 104 and 106 shown in Fig. 1A and IB pass light through without significantly changing the direction of polarization. Accordingly, the polarization pattern assembly 100 comprises on opposite sides of polarization pane 102 one pair of regions 104 and 106 leaving a direction of polarization of light passing therethrough substantially unchanged.
- regions 104 and 106 are devoid of any plate, pane or the like, i.e. realized as solid-material-free regions.
- regions 104 and 106 can be realized by providing, in each of regions 104 and 106, a pane 107 or 108, respectively, each being made of non-birefringent and non-optically active material, for example but not limited to fused silica or calcium fluoride (CaF 2 ) .
- the polarization pattern assembly 800 shown in Fig. 8A and 8B comprises on opposite sides of polarization pane 102 one pair of regions 104 and 106 leaving a direction of polarization of light passing therethrough substantially unchanged.
- Panes 107 and 108 in polarization pattern assembly 800 help to reduce an undesired intensity variation due to significantly different light attenuations in regions 104, 106 and pane 102 (so-called "polbalance") , as well as path length differences between rays travelling through polarization pattern assembly 100.
- the thicknesses of panes 102, 107 and 108 preferably meet an equation n ⁇ *d ⁇ « n*d « n 2 *d 2 , wherein ni and n 2 denote the refractive index of pane 107 or 108, respectively, di and d 2 denote the thickness of pane 107 or 108, respectively, n denotes the refractive index of pane 102, and d denotes the thickness of panes 102. If the above equation is met, the optical path lengths of light rays passing panes 102, 107 and 108 are substantially equal.
- frame 110 can be any shape and area suitable for holding panes 102-106 in accordance with a desired form factor or other design criteria.
- pane 102 and regions 104, 106 are rectangular (or square) and frame 110 likewise has a rectangular (or square) shape and an area large enough to hold pane 102 as shown in FIGs. 1A-1B or panes 102, 107 and 108 shown in Fig. IC.
- the present invention is however not intended to be so limited, and other shapes can be used for panes 102, 107 and 108, regions 104, 106 and frame 110 as would be apparent to a person skilled in the art given this description.
- Polarization pattern assembly 100 or 800 can be inserted in an optical path of any optical system including, but not limited to, an illuminator having a pupil plane.
- FIGS. 1A and 8A further show an imaging area 150 that can correspond to the area of polarization pattern assembly 100 that falls within a pupil of an optical system (not shown) .
- imaging area 150 has three zones corresponding to respective areas of panes 102-106. Since polarization pane 102 has a different polarization property than regions 104 and 106, a polarization pattern will be imparted across a pupil of the optical system.
- FIGS. 2-6 The operation of polarization assembly 100 or 800 including the generation of particular polarization patterns is described further with respect to FIGS. 2-6 (in the following exemplarily for but not limited to polarization assembly 100) .
- Three-zone hybrid polarization patterns can be created.
- an incident light beam 210 passes through polarization pattern assembly 100 which outputs an output beam 220.
- Incident light beam 210 can be linearly polarized along an x-axis (also called a horizontal direction) .
- FIG. 2B shows a resultant three-zone hybrid polarization pattern 230 created by polarization pattern assembly 100 when illuminated with an incident light beam 210 that is linearly polarized in a horizontal direction.
- Pattern 230 includes a center zone 232 in between two outer zones 234, 236.
- incident light beam 210 can be linearly polarized along a y-axis (also called a vertical direction) .
- FIG. 2C shows a resultant three-zone hybrid polarization pattern 240 created by polarization pattern assembly 100 when illuminated with an incident light beam 210 that is linearly polarized in a vertical direction.
- Pattern 240 includes a center zone 242 in between two outer zones 244, 246. Light in. center zone 242 has passed through polarization pane 102 and is now horizontally polarized. Light in outer zone 244 has passed through region 104 and remains vertically polarized. Light in outer zone 246 has passed through region 106 and also remains vertically polarized.
- polarization pattern assembly 100 is that different polarization patterns can be attained simply by inputting horizontally or vertically polarized light. This could be achieved in a number of ways including but not limited to: providing a linear polarizer at a source and rotating the polarizer in a horizontal or vertical orientation relative to polarization pattern assembly 100 and/or rotating polarization pattern assembly 100 relative to a linearly polarized light source.
- FIG. 2D is a diagram illustrating a beam shaper 250 in combination with a polarization pattern assembly 100 according to an embodiment of the present invention.
- Beam shaper 250 can be a diffractive optic or mask that shapes an incident beam 210 and then passes the shaped beam to polarization pattern assembly 100 which outputs an output beam 260.
- beam shaper 250 can be provided on the other side of polarization pattern assembly 100 to receive light that has passed through polarization pattern assembly 100.
- FIGs. 3A, 3B, 4A, 4B, 5A, 5B, 6A, and 6B illustrate additional polarization patterns that can be generated using a beam shaper 250 in combination with polarization pattern assembly 100 according to embodiments of the present, invention.
- FIG. 3A shows a resultant low sigma linear vertical polarization pattern 300A created by polarization pattern assembly 100 when pane 102 is illuminated with an incident light beam 210 that is linearly polarized in a horizontal direction.
- Pattern 300A includes a center zone 310A surrounded by a concentric outer zone 320A. Light in center zone 310A has passed through polarization pane 102 and is now vertically polarized. Light is not present in outer zone 320A due to beam shaper 250.
- Beam shaper 250 can be a mask having a concentric circle shape that occludes light in zone 320A.
- beam shaper 250 can be diffractive optics or other types of optical components that direct incident light only to pane 102 in zone 310A. Beam shaper 250 can even be omitted if an incident beam size is narrow enough to impinge only on pane 102.
- FIG. 3B shows a resultant low sigma linear horizontal polarization pattern 300B created by polarization pattern assembly 100 when pane 102 is illuminated with an incident light beam 210 that is linearly polarized in a vertical direction.
- Pattern 300B includes a center zone 310B surrounded by a concentric outer zone 320B. Light in center zone 310B has passed through polarization pane 102 and is now horizontally polarized. Light is not present in outer zone 320B due to beam shaper 250 or beam size as described above with respect to FIG. 3A.
- polarization pattern assembly 100 is that either low sigma linear polarization patterns (horizontal or vertical) can be attained simply by inputting horizontally or vertically polarized light.
- FIG. 4A shows a resultant tangential quadrapole polarization pattern 400A created by polarization pattern assembly 100 and beam shaper 250 when illuminated with an incident light beam 210 that is linearly polarized in a horizontal direction.
- Pattern 400A includes four pole regions 410A, 412A, 414A, and 416A having tangential polarized light.
- Pole regions 410A, 412A, 414A, and 416A can be formed around in outer peripheral zone of a pupil by beam shaper 250. Light in pole regions 414A, 416A has passed through polarization pane 102 and is now vertically polarized.
- Beam shaper 250 can be a mask having a spoke wheel shape that occludes light in zone 420A.
- beam shaper 250 can be diffractive optics or other types of optical components that direct incident light only to regions of polarization pattern assembly 100 corresponding to pole regions 410A, 412A, 414A, and 416A.
- FIG. 4B shows a resultant radial quadrapole polarization pattern 400B created by polarization pattern assembly 100 and beam shaper 250 when illuminated with an incident light beam 210 that is linearly polarized in a vertical direction.
- Pattern 400B includes four pole regions 410B, 412B, 414B and 416B having radial polarized light.
- Pole regions 410B, 412B, 414B, and 416B can be formed around in outer peripheral zone of a pupil by beam shaper 250.
- Light in pole regions 414B, 416B has passed through polarization pane 102 and is now horizontally polarized.
- Light in pole region 410B has passed through region 106 and remains vertically polarized.
- Beam shaper 250 can be a mask having a spoke wheel shape that occludes light in zone 420B.
- beam shaper 250 can be diffractive optics or other types of optical components that direct incident light only to regions of polarization pattern assembly 100 corresponding to pole regions 410B, 412B, 414B, and 416B.
- FIG. 5A shows a resultant radial dipole polarization pattern 500A created by polarization pattern assembly 100 and beam shaper 250 when illuminated with an incident light beam 210 that is linearly polarized in a vertical direction.
- Pattern 500A includes two pole regions 510A, 512A having radial polarized light. Pole regions 510A, 512A can be formed around at the top and bottom of an outer peripheral zone of a pupil by beam shaper 250.
- Beam shaper 250 can be a mask having a bow tie shape that occludes light in zone 520A.
- beam shaper 250 can be diffractive optics or other types of optical components that direct incident light only to regions of polarization pattern assembly 100 corresponding to pole regions 510A, 512A.
- FIG. 5B shows a resultant radial dipole polarization pattern 500B created by polarization pattern assembly 100 and beam shaper 250 when illuminated with an incident light beam 210 that is linearly polarized in a vertical direction.
- Pattern 500B includes two pole regions 510B., 512B having radial polarized light.
- Pole regions 510B, 512B can be formed around at left and right sides of an outer peripheral zone of a pupil by beam shaper 250.
- Light in pole regions 510B, 512B has passed through polarization pane 102 and is vertically polarized. Light is not present in a bow tie shape zone 520B.
- Beam shaper 250 can be a mask having a bow tie shape that occludes light in zone 520B.
- beam shaper 250 can be diffractive optics or other types of optical components that direct incident light only to regions of polarization pattern assembly 100 corresponding to pole regions 510B, 512B.
- an advantage of polarization pattern assembly 100 in combination with beam shaper 250 is that radial dipole patterns can be attained simply by inputting vertically polarized light and using beam shaper 250 to direct light to top and bottom regions or left and right side regions.
- beam shaper 250 is a bowtie-shaped mask it can be simply be rotated to occlude light in zone 520A or 520B.
- FIG. 6A shows a resultant tangential dipole polarization pattern 600A created by polarization pattern assembly 100 and beam shaper 250 when illuminated with an incident light beam 210 that is linearly polarized in a horizontal direction.
- Pattern 600A includes two pole regions 610A, 612A having tangential polarized light,.
- Pole regions 610A, 612A can be formed at the left and right of an outer peripheral zone of a pupil by beam shaper 250.
- Light in pole regions 610A, 612A has passed through polarization pane 102 and is vertically polarized. Light is not present in a bow tie shape zone 620A.
- Beam shaper 250 can be a mask having a bow tie shape that occludes light in zone 620A.
- beam shaper 250 can be diffractive optics or other types of optical components that direct incident light only to regions of polarization pattern assembly 100 corresponding to pole regions 610A, 612A.
- FIG. 6B shows a resultant tangential dipole polarization pattern 600B created by polarization pattern assembly 100 and beam shaper 250 when illuminated with an incident light beam 210 that is linearly polarized in a horizontal direction.
- Pattern 600B includes two pole regions 610B, 612B having tangential polarized light. Pole regions 610B, 612B can be formed at a top and bottom of an outer peripheral zone of a pupil by beam shaper 250. Light in pole region 610B has passed through region 106 and remains horizontally polarized. Light in pole region 612B has passed through region 104 and also remains horizontally polarized. Light is not present in a bow tie shape zone 620B.
- Beam shaper 250 can be a mask having a bow tie shape that occludes light in zone 620B.
- beam shaper 250 can be diffractive optics or other types of optical components that direct incident light only to regions of polarization pattern assembly 100 corresponding to pole regions 610B, 612B.
- polarization pattern assembly 100 in combination with beam shaper 250 is that tangential dipole patterns can be attained simply by inputting horizontally polarized light and using beam shaper 250 to direct light to top and bottom regions or left and right side regions.
- beam shaper 250 is a bowtie shaped mask it can be simply rotated to occlude light in zone 620A or 620B.
- Figs. 9A and 9B as well as Figs. 10A and 10B show further embodiments of a polarization pattern assembly according to the present invention, which are principally based on the embodiment already described with reference to Figs. 8A and 8B, but modified in order- to achieve a saving of the -usually expensive- material used to realize regions 104, 106 and/or polarization pane 102.
- the polarization pattern assembly 900 also comprises on opposite sides of polarization pane 102 one pair of regions leaving a direction of polarization of light passing therethrough substantially unchanged.
- regions 104 and 106 are realized by providing, in each of regions 104 and 106, a pane 111 or 112, respectively, each being made of non-birefringent and non-optically active material, for example but not limited to fused silica or calcium fluoride (CaF 2 ) .
- panes 111 and 112 of polarization pattern assembly 900 do not extend over the whole region 104 or 106, respectively, but have a reduced dimension and size in order to cover substantially only a region of interest, e.g. an area which is in fact traversed by irradiation. Since the remaining features of polarization pattern assembly 900 shown in Figs. 9A and 9B correspond to those of polarization pattern assembly 800 shown in Fig. 8A and 8B, corresponding elements have been marked with same reference signs and their detailed description is omitted.
- Figs. 9A and 9B are particularly suitable for dipole or quadrapole illumination modes, in order to provide e.g. the dipole or quadrapole polarization patterns discussed above with reference to Fig. 4A (tangential quadrapole), Fig. 4B (radial quadrapole), Fig. 5A (radial dipole) and Fig. 6B (tangential dipole) .
- size- reduced panes 111 and 112 meet their task to reduce undesired intensity variations and path length differences, while also saving material in some, most or all the remaining region not passed by irradiation.
- Fig. 9A and 9B is particularly suitable for dipole or quadrapole illumination modes, in order to provide e.g. the dipole or quadrapole polarization patterns discussed above with reference to Fig. 4A (tangential quadrapole), Fig. 4B (radial quadrapole), Fig. 5A (radial dipole) and Fig. 6B (tangential dipole) .
- the thicknesses of panes 102, 111 and 112 preferably meet an equation n ⁇ *d ⁇ ⁇ n*d ⁇ n 2 *d 2 , wherein ni and n 2 denote the refractive index of pane 111 or 112, respectively, di and d 2 denote the thickness of pane 111 or 112, respectively, n denotes the refractive index of pane 102, and d denotes the thickness of panes 102. If the above equation is met, the optical path lengths of light rays passing panes 102, 111 and 112 are substantially equal.
- Panes 111 and 112 can be of any shape and area suitable for meeting the above tasks. Although in the embodiment of Figs. 8A and 8B, panes 102, 111 and 112 are rectangular (or square) , the present invention is not intended to be so limited and other suitable • shapes can be used for panes 102, 111 and 112.
- regions 104 and 106 are (like in Fig. 9A and Fig. 9B) realized by providing, in each of regions 104 and 106, a pane 111 or 112, respectively, each being made of non-birefringent and non-optically active material, for example but not limited to fused silica or calcium fluoride (CaF 2 ) .
- the polarization pattern assembly 950 also comprises on opposite sides of a polarization pane one pair of regions leaving a direction of polarization of light passing therethrough substantially unchanged. The only difference with respect to Fig.
- a polarization pane of polarization pattern assembly 950 does not extend over the whole central region between regions 104 and 106, but comprises two separate panes 102a and 102b, both being plan-parallel and made of an optically active crystal.
- panes 102a, b and pane 102 have a reduced dimension and size in order to cover substantially only a region of interest, e.g. an area which is in fact traversed by irradiation.
- a central opening 113 at the position of the optical axis OA illustrated in Fig.
- polarization panes 102a and 102b are provided within frame 110, with polarization panes 102a and 102b being coupled to frame 110 on opposite sides of opening 113, and with the pair of regions 111 and 112 leaving a direction of polarization unchanged being arranged on opposite sides of opening 113 and circumferentially displaced by 90° with respect to polarization panes 102a or 102b, respectively. Since the remaining features of the polarization pattern assembly 950 shown in Figs. 10A and 10B correspond to those of polarization pattern assembly 900 of Fig. 9A and 9B, corresponding elements have been marked with same reference signs and their detailed description is omitted.
- Fig. 10A and 10B are not limited to the specific shape, size and arrangement shown in Fig. 10A and 10B, so other suitable arrangements are apparent to a skilled person given this description in order to cover substantially only a region of interest, e.g. an area which is in fact traversed by irradiation, with the respective optically active material (for panes 102, 102a, 102b) or with the non-birefringent and non optically active material (for regions 111, 112) .
- the exemplary embodiment of Figs. 10A and 10B is particularly suitable for dipole or quadrapole illumination modes, in order to provide e.g.
- FIG. 7 is a diagram illustrating a polarized illuminator 700 including a polarization pattern assembly 100 (or alternatively e.g. a polarization pattern assembly 800, 900, 950, ...) and/or beam shaper 750 in a lithographic system according to an embodiment of the present invention.
- Beam shaper 750 and polarization pattern assembly 100 are arranged along a common optical path of illuminator 700.
- Beam shaper 750 can include first beam shaper element 750A and second beam shaper element 750B disposed on opposite sides of polarization pattern assembly 100 as shown in FIG. 7.
- first beam shaper element 750A includes one or more diffractive optics (e.g.
- Second beam shaper element 750B can include a mask to further block undesired rays and otherwise clean up the polarization pattern at the pupil.
- Polarized illuminator 700 outputs an output beam 705 of polarized illumination to mask 710.
- Light 715 passing through (or reflected from) mask 710 is projected by an optical system 720 (i.e., projection optics) onto a wafer 730 during printing.
- This lithography system used with polarized illuminator 700 is illustrative and not intended to limit the present invention.
- Polarized illuminator 700 can be used in any type of lithographic system or tool as would be apparent to a person skilled in the art given this description.
- output beam 705 can have any of a variety of polarization patterns at a pupil of illuminator 700 including, but not limited to, three-zone hybrid polarization patterns, low sigma linear patterns, radial dipole patterns, tangential dipole patterns, tangential quadrapole patterns, and radial quadrapole patterns.
- polarized illuminator 700 can provide any of these patterns as described above with respect to FIGs. 2B-6B. Further, polarized illuminator 700 can be switched to provide any of these patterns depending upon the configuration of beam shaper 750 and polarization pattern assembly 100 as described above with respect to FIGs.
- a controller (not shown) can be provided to change the configuration of beam shaper 750 and polarization pattern assembly 100 to obtain a desired pattern. In this way patterns can be automatically changed during printing to allow different polarization patterns in a pupil during exposure of a wafer.
- a controller can move one or more diffraction gratings in beam shaper element 750A in and out of the optical path to create two or four diffracted beams (+1,-1 or greater diffracted beam orders) at the pole regions (for dipole or quadrapole patterns) , and/or to simply pass a lower order- beam for low order sigma linear patterns.
- polarization pattern assembly 100 can be rotated around an optical axis of the optical path so that input linearly polarized light is along a horizontal or vertical direction depending upon the polarization pattern which desired.
- one or more masks in beam shaper element 750B can also be moved in and out of the optical path through illuminator 700 and rotated so that a mask shape (e.g., a concentric circle, spoke-wheel or bow tie shape) in a desired orientation is present in accordance with the polarization pattern desired.
- a mask shape e.g., a concentric circle, spoke-wheel or bow tie shape
- the polarization patterns illustrated in FIG. 3 may be advantageous for polarized illuminator 700 to provide.
- polarization modes are useful in double exposing the wafer with alternating phase shift masks.
- alternating phase shift masks diffract the light in a different way from binary masks.
- the axial beam of the illuminator is diffracted symmetrically into the projection optics ("PO") .
- PO projection optics
- the smallest and sharpest ,-features are achieved with a thin beam of ill ⁇ mination on axis.
- one polarization can be used with a mask that has the vertically oriented structures. The wafer is then exposed again using a second polarization and a second mask with the horizontal structures.
- the polarization patterns in FIG. 3 are useful for double exposure with alternating phase shift masks.
- a mask with mostly vertical lines i.e., the lines are vertical and repeat horizontally, diffracts mostly horizontally across the PO pupil. These beams recombine at the wafer more effectively if the polarization is vertical.
- a second mask with mostly horizontal structures is imaged better with horizontal polarization. Both masks can be exposed onto the same wafer without "developing the film" in between and the resulting double exposure image is better than if the whole structure had been exposed at once with unpolarized light.
- the polarization patterns listed in FIG. 4 may be desired in a lithographic application.
- the very smallest vertical lines are well imaged by the vertically polarized poles on the right and left edges of the illuminator pupil as shown in FIG. 4A.
- the +1 and -1 diffraction order from the other two poles are diffracted outside the PO pupil and do not make it to the wafer.
- the very smallest horizontal lines are well imaged by the horizontally polarized poles on the top and bottom portion of the illuminator pupil as shown in FIG. 4B.
- the enhancement in the contrast due to the tangential polarization in general more than makes up for the lost contrast due to the non-imaging poles. In this..way, all features can be printed in a single..,. exposure where, without polarization control, this would not be possible.
- the polarization patterns listed in FIGs. 5 and 6 are useful for double exposures of mostly horizontal and .mostly vertical structures using binary masks.
- double exposures were chosen in order to receive the benefit of polarization.
- Double exposures are often used because for a given structure orientation, only two of the four poles produces an image. The other two poles do not.
- the +1 and -1 diffraction orders are outside the P.O. pupil. Only the zero order reaches the wafer providing no image and only contributing a contrast robbing constant background.
- the present invention is not limited to lithography systems with optical systems producing the patterns of polarization described above or illustrated in the figures. Rather, for any given reticle or mask, there may be an optimal pupil fill and optimal polarization for printing. Accordingly, the present invention encompasses such optimal polarization patterns .
- the polarization pane(s) used in the optical systems of the present invention can utilize optics-quality materials that transmit light of a wavelength of interest. Accordingly, the invention is not limited to use with any particular wave length of light.
- Example wavelengths are infrared, ultraviolet ("UV”), and visible.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05716921A EP1749241A1 (en) | 2004-05-25 | 2005-03-04 | Apparatus for providing a pattern of polarization |
US11/569,001 US7916391B2 (en) | 2004-05-25 | 2005-03-04 | Apparatus for providing a pattern of polarization |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/852,099 | 2004-05-25 | ||
US10/852,099 US7324280B2 (en) | 2004-05-25 | 2004-05-25 | Apparatus for providing a pattern of polarization |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005116772A1 true WO2005116772A1 (en) | 2005-12-08 |
Family
ID=34936768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2005/050981 WO2005116772A1 (en) | 2004-05-25 | 2005-03-04 | Apparatus for providing a pattern of polarization |
Country Status (9)
Country | Link |
---|---|
US (3) | US7324280B2 (en) |
EP (2) | EP1749241A1 (en) |
JP (2) | JP4361513B2 (en) |
KR (1) | KR100665138B1 (en) |
CN (1) | CN100487520C (en) |
DE (1) | DE602005008666D1 (en) |
SG (1) | SG117600A1 (en) |
TW (1) | TWI280460B (en) |
WO (1) | WO2005116772A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1879071A2 (en) | 2006-07-14 | 2008-01-16 | Carl Zeiss SMT AG | Illumination optics for a micro lithographic projection illumination system |
DE102008013567A1 (en) | 2007-05-08 | 2008-11-13 | Carl Zeiss Smt Ag | Lighting device for microlithographic projection exposure system, has optical element adjusting polarization conditions of radiations, where conditions are different from each other and radiations are deflected in different directions |
US8379188B2 (en) | 2007-11-20 | 2013-02-19 | Carl Zeiss Smt Gmbh | Optical system |
US8675178B2 (en) | 2006-08-17 | 2014-03-18 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus |
US8861084B2 (en) | 2004-01-16 | 2014-10-14 | Carl Zeiss Smt Ag | Polarization-modulating optical element |
US9581911B2 (en) | 2004-01-16 | 2017-02-28 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101124179B1 (en) | 2003-04-09 | 2012-03-27 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
TWI474132B (en) | 2003-10-28 | 2015-02-21 | 尼康股份有限公司 | Optical illumination device, projection exposure device, exposure method and device manufacturing method |
TWI612338B (en) | 2003-11-20 | 2018-01-21 | 尼康股份有限公司 | Optical illuminating apparatus, exposure device, exposure method, and device manufacturing method |
US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
TWI395068B (en) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | Optical system, exposure device and method of exposure |
TWI360837B (en) | 2004-02-06 | 2012-03-21 | Nikon Corp | Polarization changing device, optical illumination |
US7324280B2 (en) * | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
US7548370B2 (en) * | 2004-06-29 | 2009-06-16 | Asml Holding N.V. | Layered structure for a tile wave plate assembly |
KR100614651B1 (en) * | 2004-10-11 | 2006-08-22 | 삼성전자주식회사 | Apparatus And Method For Pattern Exposure, Photomask Used Therefor, Design Method For The Photomask, Illuminating System Therefor and Implementing Method For The Illuminating System |
US7312852B2 (en) * | 2004-12-28 | 2007-12-25 | Asml Netherlands B.V. | Polarized radiation in lithographic apparatus and device manufacturing method |
US7345740B2 (en) * | 2004-12-28 | 2008-03-18 | Asml Netherlands B.V. | Polarized radiation in lithographic apparatus and device manufacturing method |
JP5067162B2 (en) * | 2005-11-10 | 2012-11-07 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
US7525642B2 (en) * | 2006-02-23 | 2009-04-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1857879A1 (en) * | 2006-05-15 | 2007-11-21 | Advanced Mask Technology Center GmbH & Co. KG | An illumination system and a photolithography apparatus |
DE102006032878A1 (en) * | 2006-07-15 | 2008-01-17 | Carl Zeiss Smt Ag | Illumination system of a microlithographic projection exposure apparatus |
US8035803B2 (en) * | 2006-09-06 | 2011-10-11 | Carl Zeiss Smt Gmbh | Subsystem of an illumination system of a microlithographic projection exposure apparatus |
KR20080073196A (en) * | 2007-02-05 | 2008-08-08 | 엘지전자 주식회사 | Method for efficiently transmitting channel quality information in mimo system |
US20080285000A1 (en) * | 2007-05-17 | 2008-11-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4971932B2 (en) * | 2007-10-01 | 2012-07-11 | キヤノン株式会社 | Illumination optical system, exposure apparatus, device manufacturing method, and polarization control unit |
US8045161B2 (en) * | 2008-03-18 | 2011-10-25 | The Board Of Trustees Of The University Of Illinois | Robust determination of the anisotropic polarizability of nanoparticles using coherent confocal microscopy |
US8334976B2 (en) | 2008-03-18 | 2012-12-18 | The Board Of Trustees Of The University Of Illinois | Second-order nonlinear susceptibility of a nanoparticle using coherent confocal microscopy |
NL1036786A1 (en) * | 2008-05-08 | 2009-11-11 | Asml Netherlands Bv | Lithographic apparatus and method. |
JP5319766B2 (en) * | 2008-06-20 | 2013-10-16 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Optical system of microlithography projection exposure apparatus and microlithography exposure method |
JP2010197352A (en) * | 2009-02-27 | 2010-09-09 | Hitachi High-Technologies Corp | Defect inspection method and defect inspecting apparatus |
US8553204B2 (en) * | 2009-05-20 | 2013-10-08 | Nikon Corporation | Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method |
DE102011003035A1 (en) * | 2010-02-08 | 2011-08-11 | Carl Zeiss SMT GmbH, 73447 | Polarization-influencing optical arrangement, as well as optical system of a microlithographic projection exposure apparatus |
EP2369413B1 (en) * | 2010-03-22 | 2021-04-07 | ASML Netherlands BV | Illumination system and lithographic apparatus |
JP2014059507A (en) * | 2012-09-19 | 2014-04-03 | Fuji Xerox Co Ltd | Image forming apparatus |
US20140111849A1 (en) * | 2012-10-18 | 2014-04-24 | Polarization Solutions, Llc | Apparatus and method for mosaic gratings-based polarizer |
JP6488298B2 (en) | 2013-08-09 | 2019-03-20 | ケーエルエー−テンカー コーポレイション | Multi-spot lighting with improved detection sensitivity |
CN105593982B (en) | 2013-08-23 | 2017-10-31 | 科磊股份有限公司 | Broadband and wide visual field angle compensator |
GB2521443B (en) * | 2013-12-20 | 2016-06-29 | Vizeye Ltd | Apparatus and method for inducing polarization perception in an observer |
JP6619619B2 (en) * | 2015-11-04 | 2019-12-11 | 日東電工株式会社 | Polarizer, polarizing plate, and method for producing polarizer |
CN105785581B (en) * | 2016-05-09 | 2018-06-22 | 湖州中科光电技术有限公司 | A kind of design method for the micro structural component for being used to generate rotational symmetry polarised light |
CN110160002B (en) * | 2018-02-12 | 2022-02-25 | 深圳市绎立锐光科技开发有限公司 | Lighting system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB856621A (en) * | 1956-07-20 | 1960-12-21 | Nat Res Dev | Improvements in or relating to polarising microscopes |
WO2000079331A1 (en) * | 1999-06-21 | 2000-12-28 | Citizen Watch Co., Ltd. | Optical device |
US6191880B1 (en) * | 1995-09-23 | 2001-02-20 | Carl-Zeiss-Stiftung | Radial polarization-rotating optical arrangement and microlithographic projection exposure system incorporating said arrangement |
Family Cites Families (144)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275493A (en) * | 1993-03-19 | 1994-09-30 | Fujitsu Ltd | Projection exposure |
US5465220A (en) * | 1992-06-02 | 1995-11-07 | Fujitsu Limited | Optical exposure method |
US2269713A (en) * | 1939-09-09 | 1942-01-13 | Ralph J Erwin | Shutter for projection apparatus |
US2420252A (en) * | 1945-03-23 | 1947-05-06 | Polaroid Corp | Optical interference sight for guns, cameras, or the like |
US2473857A (en) * | 1946-12-05 | 1949-06-21 | Burchell Holloway Corp | Apparatus for insertion in color display devices utilizing polarized light for securing changing saturation of specific hues in fixed zones as vewed by observers |
US3049051A (en) * | 1956-01-28 | 1962-08-14 | Debrie Andre Victor Le Clement | Arrangement with polarizing grating for the photographic establishment of filters with black and white networks |
US3484714A (en) * | 1964-12-16 | 1969-12-16 | American Optical Corp | Laser having a 90 polarization rotator between two rods to compensate for the effects of thermal gradients |
US3438692A (en) * | 1965-03-08 | 1969-04-15 | Bell Telephone Labor Inc | Birefringent device for forming multiple images |
US3630598A (en) * | 1970-01-02 | 1971-12-28 | Xerox Corp | Optical demodulation filter |
US3719415A (en) * | 1971-09-22 | 1973-03-06 | Bell Telephone Labor Inc | Radial and tangential polarizers |
US3892470A (en) * | 1974-02-01 | 1975-07-01 | Hughes Aircraft Co | Optical device for transforming monochromatic linearly polarized light to ring polarized light |
FR2385241A1 (en) * | 1976-12-23 | 1978-10-20 | Marie G R P | POLARIZATION MODE CONVERTERS FOR LASER BEAMS AND PLASMA GENERATORS USING THEM |
US4272158A (en) * | 1979-03-02 | 1981-06-09 | Coherent, Inc. | Broadband optical diode for a ring laser |
US4286843A (en) * | 1979-05-14 | 1981-09-01 | Reytblatt Zinovy V | Polariscope and filter therefor |
CA1253726A (en) * | 1982-06-28 | 1989-05-09 | Masataka Shirasaki | Polarization rotation compensator and optical isolator using the same |
DE3523641C1 (en) * | 1985-07-02 | 1986-12-18 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Device for selecting rotationally symmetrical polarization components of a light bundle and use of such a device |
US4744615A (en) * | 1986-01-29 | 1988-05-17 | International Business Machines Corporation | Laser beam homogenizer |
JP2995820B2 (en) * | 1990-08-21 | 1999-12-27 | 株式会社ニコン | Exposure method and method, and device manufacturing method |
US7656504B1 (en) * | 1990-08-21 | 2010-02-02 | Nikon Corporation | Projection exposure apparatus with luminous flux distribution |
US6252647B1 (en) * | 1990-11-15 | 2001-06-26 | Nikon Corporation | Projection exposure apparatus |
US5541026A (en) * | 1991-06-13 | 1996-07-30 | Nikon Corporation | Exposure apparatus and photo mask |
KR950004968B1 (en) * | 1991-10-15 | 1995-05-16 | 가부시키가이샤 도시바 | Projection exposure apparatus |
JP2796005B2 (en) * | 1992-02-10 | 1998-09-10 | 三菱電機株式会社 | Projection exposure apparatus and polarizer |
JP2866243B2 (en) * | 1992-02-10 | 1999-03-08 | 三菱電機株式会社 | Projection exposure apparatus and method of manufacturing semiconductor device |
JP3278896B2 (en) * | 1992-03-31 | 2002-04-30 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
JP3246615B2 (en) * | 1992-07-27 | 2002-01-15 | 株式会社ニコン | Illumination optical device, exposure apparatus, and exposure method |
JP2884947B2 (en) * | 1992-10-01 | 1999-04-19 | 株式会社ニコン | Projection exposure apparatus, exposure method, and method of manufacturing semiconductor integrated circuit |
US6404482B1 (en) | 1992-10-01 | 2002-06-11 | Nikon Corporation | Projection exposure method and apparatus |
JPH06118623A (en) * | 1992-10-07 | 1994-04-28 | Fujitsu Ltd | Reticle and semiconductor aligner using the same |
US5459000A (en) * | 1992-10-14 | 1995-10-17 | Canon Kabushiki Kaisha | Image projection method and device manufacturing method using the image projection method |
JPH06169415A (en) * | 1992-11-30 | 1994-06-14 | Olympus Optical Co Ltd | Image pickup device |
JP2866267B2 (en) * | 1992-12-11 | 1999-03-08 | 三菱電機株式会社 | Optical drawing apparatus and optical drawing method for wafer substrate |
JP2698521B2 (en) * | 1992-12-14 | 1998-01-19 | キヤノン株式会社 | Catadioptric optical system and projection exposure apparatus having the optical system |
US5739898A (en) * | 1993-02-03 | 1998-04-14 | Nikon Corporation | Exposure method and apparatus |
KR0153796B1 (en) | 1993-09-24 | 1998-11-16 | 사토 후미오 | Exposure apparatus and method |
JP3099933B2 (en) * | 1993-12-28 | 2000-10-16 | 株式会社東芝 | Exposure method and exposure apparatus |
KR0166612B1 (en) | 1993-10-29 | 1999-02-01 | 가나이 쓰토무 | Method and apparatus for exposing pattern, mask used therefor and semiconductor integrated circuit formed by using the same |
JP3505810B2 (en) | 1993-10-29 | 2004-03-15 | 株式会社日立製作所 | Pattern exposure method and apparatus |
US5442184A (en) | 1993-12-10 | 1995-08-15 | Texas Instruments Incorporated | System and method for semiconductor processing using polarized radiant energy |
DE19520563A1 (en) | 1995-06-06 | 1996-12-12 | Zeiss Carl Fa | Illumination device for a projection microlithography device |
US6285443B1 (en) * | 1993-12-13 | 2001-09-04 | Carl-Zeiss-Stiftung | Illuminating arrangement for a projection microlithographic apparatus |
JPH07183201A (en) * | 1993-12-21 | 1995-07-21 | Nec Corp | Exposure device and method therefor |
JP2836483B2 (en) | 1994-05-13 | 1998-12-14 | 日本電気株式会社 | Illumination optics |
US5559583A (en) | 1994-02-24 | 1996-09-24 | Nec Corporation | Exposure system and illuminating apparatus used therein and method for exposing a resist film on a wafer |
JPH088177A (en) * | 1994-04-22 | 1996-01-12 | Canon Inc | Projection aligner and manufacture of device |
US5663785A (en) * | 1995-05-24 | 1997-09-02 | International Business Machines Corporation | Diffraction pupil filler modified illuminator for annular pupil fills |
JP3534363B2 (en) * | 1995-07-31 | 2004-06-07 | パイオニア株式会社 | Crystal lens and optical pickup optical system using the same |
US5815247A (en) * | 1995-09-21 | 1998-09-29 | Siemens Aktiengesellschaft | Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures |
DE19621512A1 (en) | 1996-05-29 | 1997-12-04 | Univ Schiller Jena | Polarisation establishment with respect to wavelength of source spectra |
EP0823662A2 (en) | 1996-08-07 | 1998-02-11 | Nikon Corporation | Projection exposure apparatus |
JPH1079337A (en) * | 1996-09-04 | 1998-03-24 | Nikon Corp | Projection aligner |
US6111700A (en) * | 1996-09-05 | 2000-08-29 | Fujitsu Limited | Optical display device having a reflection-type polarizer |
US5841500A (en) * | 1997-01-09 | 1998-11-24 | Tellium, Inc. | Wedge-shaped liquid crystal cell |
US6055103A (en) | 1997-06-28 | 2000-04-25 | Sharp Kabushiki Kaisha | Passive polarisation modulating optical element and method of making such an element |
JP3264224B2 (en) * | 1997-08-04 | 2002-03-11 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
DE19807120A1 (en) | 1998-02-20 | 1999-08-26 | Zeiss Carl Fa | Optical system with polarization compensator |
US6327085B1 (en) * | 1998-03-31 | 2001-12-04 | Nikon Corporation | Optical filter and optical device provided with this optical filter |
DE69931690T2 (en) * | 1998-04-08 | 2007-06-14 | Asml Netherlands B.V. | Lithographic apparatus |
DE19829612A1 (en) * | 1998-07-02 | 2000-01-05 | Zeiss Carl Fa | Microlithography lighting system with depolarizer |
US6031658A (en) * | 1998-09-25 | 2000-02-29 | University Of Central Florida | Digital control polarization based optical scanner |
JP4065923B2 (en) | 1998-09-29 | 2008-03-26 | 株式会社ニコン | Illumination apparatus, projection exposure apparatus including the illumination apparatus, projection exposure method using the illumination apparatus, and adjustment method of the projection exposure apparatus |
US6563567B1 (en) * | 1998-12-17 | 2003-05-13 | Nikon Corporation | Method and apparatus for illuminating a surface using a projection imaging apparatus |
JP4207389B2 (en) * | 1999-01-06 | 2009-01-14 | 株式会社ニコン | Projection optical system, method of manufacturing the same, and projection exposure apparatus using the same |
JP2000347177A (en) * | 1999-03-29 | 2000-12-15 | Minolta Co Ltd | Display optical device and projector display device using the same |
DE19921795A1 (en) * | 1999-05-11 | 2000-11-23 | Zeiss Carl Fa | Projection exposure system and exposure method of microlithography |
AU5848100A (en) * | 1999-07-05 | 2001-01-22 | Nikon Corporation | Method for producing quartz glass member and quartz glass member produced thereby |
US6239853B1 (en) * | 1999-10-01 | 2001-05-29 | Rockwell Science Center, Llc | Staggered waveplate LCD privacy screen |
US6361909B1 (en) * | 1999-12-06 | 2002-03-26 | Industrial Technology Research Institute | Illumination aperture filter design using superposition |
TWI282909B (en) * | 1999-12-23 | 2007-06-21 | Asml Netherlands Bv | Lithographic apparatus and a method for manufacturing a device |
DE10010131A1 (en) | 2000-03-03 | 2001-09-06 | Zeiss Carl | Microlithography projection exposure with tangential polarization involves using light with preferred direction of polarization oriented perpendicularly with respect to plane of incidence |
JP3927753B2 (en) * | 2000-03-31 | 2007-06-13 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
US6553156B1 (en) * | 2000-06-30 | 2003-04-22 | Oplink Communications, Inc. | Optical isolators with ultra-low polarization mode dispersion |
JP3645801B2 (en) * | 2000-08-24 | 2005-05-11 | ペンタックス株式会社 | Beam train detection method and phase filter for detection |
JP2002075835A (en) | 2000-08-30 | 2002-03-15 | Nikon Corp | Illumination optical device and exposure system with the same |
JP2002231619A (en) * | 2000-11-29 | 2002-08-16 | Nikon Corp | Optical illumination equipment and aligner equipped with the same |
TWI285295B (en) | 2001-02-23 | 2007-08-11 | Asml Netherlands Bv | Illumination optimization in lithography |
US7375887B2 (en) | 2001-03-27 | 2008-05-20 | Moxtek, Inc. | Method and apparatus for correcting a visible light beam using a wire-grid polarizer |
CN1312509C (en) * | 2001-04-05 | 2007-04-25 | 费伦茨·基什 | Colour filter means having optical activity under the influence of a polarized light |
EP1384117A2 (en) * | 2001-04-24 | 2004-01-28 | Canon Kabushiki Kaisha | Exposure method and apparatus |
JP2002324743A (en) * | 2001-04-24 | 2002-11-08 | Canon Inc | Exposing method and equipment thereof |
WO2002091078A1 (en) * | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
DE10124566A1 (en) * | 2001-05-15 | 2002-11-21 | Zeiss Carl | Optical imaging system with polarizing agents and quartz crystal plate therefor |
EP1390783A2 (en) | 2001-05-15 | 2004-02-25 | Carl Zeiss | Lens system consisting of fluoride crystal lenses |
DE10124474A1 (en) * | 2001-05-19 | 2002-11-21 | Zeiss Carl | Microlithographic exposure involves compensating path difference by controlled variation of first and/or second optical paths; image plane difference is essentially independent of incident angle |
US7053988B2 (en) | 2001-05-22 | 2006-05-30 | Carl Zeiss Smt Ag. | Optically polarizing retardation arrangement, and microlithography projection exposure machine |
DE10124803A1 (en) * | 2001-05-22 | 2002-11-28 | Zeiss Carl | Polarizer and microlithography projection system with polarizer |
JP2002359176A (en) * | 2001-05-31 | 2002-12-13 | Canon Inc | Luminaire, illumination control method, aligner, device and manufacturing method thereof |
KR100576746B1 (en) * | 2001-06-01 | 2006-05-03 | 에이에스엠엘 네델란즈 비.브이. | Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product |
US6727992B2 (en) * | 2001-07-06 | 2004-04-27 | Zygo Corporation | Method and apparatus to reduce effects of sheared wavefronts on interferometric phase measurements |
US6788389B2 (en) * | 2001-07-10 | 2004-09-07 | Nikon Corporation | Production method of projection optical system |
US8354438B2 (en) * | 2001-08-08 | 2013-01-15 | Michael Chez | Neurological functions |
KR100431883B1 (en) * | 2001-11-05 | 2004-05-17 | 삼성전자주식회사 | Projection Method and projection system |
JP2003297727A (en) | 2002-04-03 | 2003-10-17 | Nikon Corp | Illumination optical device, exposure apparatus, and method of exposure |
JP4324957B2 (en) * | 2002-05-27 | 2009-09-02 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
TWI233004B (en) * | 2002-05-31 | 2005-05-21 | Asml Netherlands Bv | Kit of parts for assembling an optical element, method of assembling an optical element, optical element, lithographic apparatus, and device manufacturing method |
JP2004179172A (en) | 2002-06-26 | 2004-06-24 | Nikon Corp | Aligner, exposure method, and method of manufacturing device |
US6965484B2 (en) * | 2002-07-26 | 2005-11-15 | Massachusetts Institute Of Technology | Optical imaging systems and methods using polarized illumination and coordinated pupil filter |
JP3958163B2 (en) * | 2002-09-19 | 2007-08-15 | キヤノン株式会社 | Exposure method |
TW200412617A (en) * | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
TWI247339B (en) | 2003-02-21 | 2006-01-11 | Asml Holding Nv | Lithographic printing with polarized light |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US20050164522A1 (en) * | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR101124179B1 (en) | 2003-04-09 | 2012-03-27 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
US6842223B2 (en) * | 2003-04-11 | 2005-01-11 | Nikon Precision Inc. | Enhanced illuminator for use in photolithographic systems |
US7511886B2 (en) | 2003-05-13 | 2009-03-31 | Carl Zeiss Smt Ag | Optical beam transformation system and illumination system comprising an optical beam transformation system |
DE10321598A1 (en) | 2003-05-13 | 2004-12-02 | Carl Zeiss Smt Ag | Lighting system with Axikon module |
JP2005024890A (en) | 2003-07-02 | 2005-01-27 | Renesas Technology Corp | Polarizer, projection lens system, aligner, and exposure method |
WO2005024516A2 (en) | 2003-08-14 | 2005-03-17 | Carl Zeiss Smt Ag | Illuminating device for a microlithographic projection illumination system |
DE10344010A1 (en) | 2003-09-15 | 2005-04-07 | Carl Zeiss Smt Ag | Honeycomb condenser and lighting system with it |
US7408616B2 (en) | 2003-09-26 | 2008-08-05 | Carl Zeiss Smt Ag | Microlithographic exposure method as well as a projection exposure system for carrying out the method |
TWI474132B (en) | 2003-10-28 | 2015-02-21 | 尼康股份有限公司 | Optical illumination device, projection exposure device, exposure method and device manufacturing method |
TWI612338B (en) | 2003-11-20 | 2018-01-21 | 尼康股份有限公司 | Optical illuminating apparatus, exposure device, exposure method, and device manufacturing method |
JP4552428B2 (en) | 2003-12-02 | 2010-09-29 | 株式会社ニコン | Illumination optical apparatus, projection exposure apparatus, exposure method, and device manufacturing method |
US6970233B2 (en) * | 2003-12-03 | 2005-11-29 | Texas Instruments Incorporated | System and method for custom-polarized photolithography illumination |
US7292315B2 (en) | 2003-12-19 | 2007-11-06 | Asml Masktools B.V. | Optimized polarization illumination |
US7414786B2 (en) * | 2004-01-12 | 2008-08-19 | University Of Rochester | System and method converting the polarization state of an optical beam into an inhomogeneously polarized state |
US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
KR101165862B1 (en) | 2004-01-16 | 2012-07-17 | 칼 짜이스 에스엠티 게엠베하 | Polarization-modulating optical element |
TWI395068B (en) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | Optical system, exposure device and method of exposure |
TWI360837B (en) | 2004-02-06 | 2012-03-21 | Nikon Corp | Polarization changing device, optical illumination |
JP4429763B2 (en) | 2004-02-26 | 2010-03-10 | 株式会社日立製作所 | Information processing apparatus control method, information processing apparatus, and storage apparatus control method |
JP4497968B2 (en) | 2004-03-18 | 2010-07-07 | キヤノン株式会社 | Illumination apparatus, exposure apparatus, and device manufacturing method |
US7304719B2 (en) * | 2004-03-31 | 2007-12-04 | Asml Holding N.V. | Patterned grid element polarizer |
JP4332460B2 (en) | 2004-04-02 | 2009-09-16 | キヤノン株式会社 | Illumination optical system and exposure apparatus having the illumination optical system |
US7324280B2 (en) * | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
JP5159027B2 (en) | 2004-06-04 | 2013-03-06 | キヤノン株式会社 | Illumination optical system and exposure apparatus |
JP2006005319A (en) | 2004-06-21 | 2006-01-05 | Canon Inc | System and method of lighting optical system, exposure apparatus, and device manufacturing method |
US7548370B2 (en) * | 2004-06-29 | 2009-06-16 | Asml Holding N.V. | Layered structure for a tile wave plate assembly |
JPWO2006016469A1 (en) | 2004-08-10 | 2008-05-01 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
JP4528580B2 (en) | 2004-08-24 | 2010-08-18 | 株式会社東芝 | Illumination light source design method, mask pattern design method, photomask manufacturing method, semiconductor device manufacturing method, and program |
US20060072207A1 (en) | 2004-09-30 | 2006-04-06 | Williams David L | Method and apparatus for polarizing electromagnetic radiation |
US7271874B2 (en) * | 2004-11-02 | 2007-09-18 | Asml Holding N.V. | Method and apparatus for variable polarization control in a lithography system |
WO2006059549A1 (en) | 2004-12-03 | 2006-06-08 | Nikon Corporation | Illumination optical device, manufacturing method thereof, exposure device, and exposure method |
JP2006179516A (en) | 2004-12-20 | 2006-07-06 | Toshiba Corp | Exposure device, exposure method and method for manufacturing semiconductor device |
US7312852B2 (en) * | 2004-12-28 | 2007-12-25 | Asml Netherlands B.V. | Polarized radiation in lithographic apparatus and device manufacturing method |
US7345740B2 (en) | 2004-12-28 | 2008-03-18 | Asml Netherlands B.V. | Polarized radiation in lithographic apparatus and device manufacturing method |
TWI453796B (en) | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | Polarizing change unit and fabricating method of device |
US7317512B2 (en) | 2005-07-11 | 2008-01-08 | Asml Netherlands B.V. | Different polarization in cross-section of a radiation beam in a lithographic apparatus and device manufacturing method |
DE102006031807A1 (en) | 2005-07-12 | 2007-01-18 | Carl Zeiss Smt Ag | Lighting device for microlithographic projection exposure system, has depolarizing system to effect polarization direction variation such that light mixer produces light without preferred direction, and including plates of crystal material |
US20070058151A1 (en) | 2005-09-13 | 2007-03-15 | Asml Netherlands B.V. | Optical element for use in lithography apparatus and method of conditioning radiation beam |
KR101459157B1 (en) | 2005-10-04 | 2014-11-07 | 칼 짜이스 에스엠티 게엠베하 | Device and method for influencing the polarization distribution in an optical system, in particular in a microlithographic projection exposure apparatus |
JP5316744B2 (en) | 2008-02-28 | 2013-10-16 | 良信 田中 | Golf putter |
-
2004
- 2004-05-25 US US10/852,099 patent/US7324280B2/en not_active Expired - Fee Related
-
2005
- 2005-03-04 US US11/569,001 patent/US7916391B2/en active Active
- 2005-03-04 EP EP05716921A patent/EP1749241A1/en not_active Withdrawn
- 2005-03-04 WO PCT/EP2005/050981 patent/WO2005116772A1/en active Application Filing
- 2005-05-20 DE DE602005008666T patent/DE602005008666D1/en active Active
- 2005-05-20 EP EP05010989A patent/EP1600816B1/en not_active Expired - Fee Related
- 2005-05-20 TW TW094116573A patent/TWI280460B/en not_active IP Right Cessation
- 2005-05-25 JP JP2005152952A patent/JP4361513B2/en not_active Expired - Fee Related
- 2005-05-25 KR KR1020050043984A patent/KR100665138B1/en not_active IP Right Cessation
- 2005-05-25 CN CNB2005100729883A patent/CN100487520C/en not_active Expired - Fee Related
- 2005-05-25 SG SG200503282A patent/SG117600A1/en unknown
-
2007
- 2007-12-20 US US11/961,678 patent/US7697117B2/en not_active Expired - Fee Related
-
2008
- 2008-09-18 JP JP2008239066A patent/JP4719781B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB856621A (en) * | 1956-07-20 | 1960-12-21 | Nat Res Dev | Improvements in or relating to polarising microscopes |
US6191880B1 (en) * | 1995-09-23 | 2001-02-20 | Carl-Zeiss-Stiftung | Radial polarization-rotating optical arrangement and microlithographic projection exposure system incorporating said arrangement |
WO2000079331A1 (en) * | 1999-06-21 | 2000-12-28 | Citizen Watch Co., Ltd. | Optical device |
US6721258B1 (en) * | 1999-06-21 | 2004-04-13 | Citizen Watch Co., Ltd. | Optical device for super-resolution |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8861084B2 (en) | 2004-01-16 | 2014-10-14 | Carl Zeiss Smt Ag | Polarization-modulating optical element |
US9316772B2 (en) | 2004-01-16 | 2016-04-19 | Carl Zeiss Smt Gmbh | Producing polarization-modulating optical element for microlithography system |
US9581911B2 (en) | 2004-01-16 | 2017-02-28 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
EP1879071A2 (en) | 2006-07-14 | 2008-01-16 | Carl Zeiss SMT AG | Illumination optics for a micro lithographic projection illumination system |
US8085382B2 (en) | 2006-07-14 | 2011-12-27 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus illumination optics |
US9052611B2 (en) | 2006-07-14 | 2015-06-09 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus illumination optics |
US9223226B2 (en) | 2006-07-14 | 2015-12-29 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus illumination optics |
US9470981B2 (en) | 2006-07-14 | 2016-10-18 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus illumination optics |
US8675178B2 (en) | 2006-08-17 | 2014-03-18 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus |
DE102008013567A1 (en) | 2007-05-08 | 2008-11-13 | Carl Zeiss Smt Ag | Lighting device for microlithographic projection exposure system, has optical element adjusting polarization conditions of radiations, where conditions are different from each other and radiations are deflected in different directions |
US8379188B2 (en) | 2007-11-20 | 2013-02-19 | Carl Zeiss Smt Gmbh | Optical system |
Also Published As
Publication number | Publication date |
---|---|
US7916391B2 (en) | 2011-03-29 |
EP1749241A1 (en) | 2007-02-07 |
US7697117B2 (en) | 2010-04-13 |
EP1600816B1 (en) | 2008-08-06 |
US20080094601A1 (en) | 2008-04-24 |
CN100487520C (en) | 2009-05-13 |
SG117600A1 (en) | 2005-12-29 |
JP4719781B2 (en) | 2011-07-06 |
DE602005008666D1 (en) | 2008-09-18 |
US20050264885A1 (en) | 2005-12-01 |
KR100665138B1 (en) | 2007-01-09 |
JP4361513B2 (en) | 2009-11-11 |
JP2006013477A (en) | 2006-01-12 |
EP1600816A2 (en) | 2005-11-30 |
US7324280B2 (en) | 2008-01-29 |
CN1702492A (en) | 2005-11-30 |
KR20060046175A (en) | 2006-05-17 |
TW200540572A (en) | 2005-12-16 |
US20080130109A1 (en) | 2008-06-05 |
JP2009033191A (en) | 2009-02-12 |
EP1600816A3 (en) | 2006-01-04 |
TWI280460B (en) | 2007-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7916391B2 (en) | Apparatus for providing a pattern of polarization | |
JP4340254B2 (en) | Layer structure for mosaic tile wave plates | |
KR100664623B1 (en) | Patterned grid element polarizer | |
US20170329233A1 (en) | Polarization-modulating optical element | |
EP0823662A2 (en) | Projection exposure apparatus | |
US20080002172A1 (en) | Microlithographic projection exposure apparatus | |
US7916390B2 (en) | Monolithic polarization controlled angle diffusers, associated methods and lithographic systems incorporating controlled angle diffusers | |
JP2000114157A (en) | Illuminator and projection aligner provided therewith | |
JP2836483B2 (en) | Illumination optics | |
US20060274295A1 (en) | Nanotool processes and applications | |
CN108885289B (en) | Wire grid polarizer manufacturing method | |
JP2005116831A (en) | Projection aligner, exposure method, and device manufacturing method | |
JP2006339359A (en) | Method of manufacturing fine structure, and electronic apparatus | |
JP4491682B2 (en) | Photo mask | |
US20070103658A1 (en) | Lithographic projection device, method an substrate for manufacturing electronic devices, and obtained electronic device | |
JP2002289516A (en) | Scan type aligner, and method for manufacturing device using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2005716921 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: DE |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2005716921 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2005716921 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11569001 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 11569001 Country of ref document: US |