WO2005121396A3 - Controlled deposition of silicon-containing coatings adhered by an oxide layer - Google Patents

Controlled deposition of silicon-containing coatings adhered by an oxide layer Download PDF

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Publication number
WO2005121396A3
WO2005121396A3 PCT/US2005/013214 US2005013214W WO2005121396A3 WO 2005121396 A3 WO2005121396 A3 WO 2005121396A3 US 2005013214 W US2005013214 W US 2005013214W WO 2005121396 A3 WO2005121396 A3 WO 2005121396A3
Authority
WO
WIPO (PCT)
Prior art keywords
process chamber
control over
coating
silicon
films
Prior art date
Application number
PCT/US2005/013214
Other languages
French (fr)
Other versions
WO2005121396A2 (en
Inventor
Boris Kobrin
Romuald Nowak
Richard C Yi
Jeffrey D Chinn
Original Assignee
Applied Microstructures Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Microstructures Inc filed Critical Applied Microstructures Inc
Publication of WO2005121396A2 publication Critical patent/WO2005121396A2/en
Publication of WO2005121396A3 publication Critical patent/WO2005121396A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching

Abstract

We have developed an improved vapor-phase deposition method and apparatus for the application of films / coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.
PCT/US2005/013214 2004-06-04 2005-04-20 Controlled deposition of silicon-containing coatings adhered by an oxide layer WO2005121396A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/862,047 US7638167B2 (en) 2004-06-04 2004-06-04 Controlled deposition of silicon-containing coatings adhered by an oxide layer
US10/862,047 2004-06-04

Publications (2)

Publication Number Publication Date
WO2005121396A2 WO2005121396A2 (en) 2005-12-22
WO2005121396A3 true WO2005121396A3 (en) 2006-11-16

Family

ID=35449280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/013214 WO2005121396A2 (en) 2004-06-04 2005-04-20 Controlled deposition of silicon-containing coatings adhered by an oxide layer

Country Status (3)

Country Link
US (2) US7638167B2 (en)
TW (1) TWI293339B (en)
WO (1) WO2005121396A2 (en)

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US7947579B2 (en) * 2006-02-13 2011-05-24 Stc.Unm Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition
US8187678B2 (en) * 2006-02-13 2012-05-29 Stc.Unm Ultra-thin microporous/hybrid materials
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
WO2009012479A1 (en) * 2007-07-19 2009-01-22 Swagelok Company Coated seals
US20090110884A1 (en) * 2007-10-29 2009-04-30 Integrated Surface Technologies Surface Coating
US20120213929A1 (en) * 2011-02-18 2012-08-23 Tokyo Electron Limited Method of operating filament assisted chemical vapor deposition system
US8852693B2 (en) 2011-05-19 2014-10-07 Liquipel Ip Llc Coated electronic devices and associated methods
WO2013011511A1 (en) 2011-07-18 2013-01-24 Mor Research Applications Ltd. A device for adjusting the intraocular pressure
US20130312663A1 (en) * 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
US9765429B2 (en) 2013-09-04 2017-09-19 President And Fellows Of Harvard College Growing films via sequential liquid/vapor phases
CN104733647B (en) * 2015-03-10 2016-08-24 京东方科技集团股份有限公司 Film encapsulation method and thin-film packing structure, display device
US10784100B2 (en) 2016-07-21 2020-09-22 Tokyo Electron Limited Back-side friction reduction of a substrate
US10006564B2 (en) * 2016-08-10 2018-06-26 Ckd Corporation Corrosion resistant coating for process gas control valve
US11709155B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US11709156B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
US11918936B2 (en) 2020-01-17 2024-03-05 Waters Technologies Corporation Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding

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Also Published As

Publication number Publication date
WO2005121396A2 (en) 2005-12-22
US7638167B2 (en) 2009-12-29
US8178162B2 (en) 2012-05-15
TWI293339B (en) 2008-02-11
TW200540293A (en) 2005-12-16
US20050271809A1 (en) 2005-12-08
US20100075034A1 (en) 2010-03-25

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