WO2005122267A3 - Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy - Google Patents

Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy Download PDF

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Publication number
WO2005122267A3
WO2005122267A3 PCT/US2005/018823 US2005018823W WO2005122267A3 WO 2005122267 A3 WO2005122267 A3 WO 2005122267A3 US 2005018823 W US2005018823 W US 2005018823W WO 2005122267 A3 WO2005122267 A3 WO 2005122267A3
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WIPO (PCT)
Prior art keywords
gallium nitride
growth
vapor phase
dislocation density
phase epitaxy
Prior art date
Application number
PCT/US2005/018823
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French (fr)
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WO2005122267A2 (en
WO2005122267A8 (en
Inventor
Benjamin A Haskell
Melvin B Mclaurin
Steven P Denbaars
James S Speck
Shuji Nakamura
Original Assignee
Univ California
Japan Science & Tech Agency
Benjamin A Haskell
Melvin B Mclaurin
Steven P Denbaars
James S Speck
Shuji Nakamura
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Japan Science & Tech Agency, Benjamin A Haskell, Melvin B Mclaurin, Steven P Denbaars, James S Speck, Shuji Nakamura filed Critical Univ California
Priority to KR1020077000164A priority Critical patent/KR101332391B1/en
Priority to JP2007515412A priority patent/JP5461773B2/en
Priority to KR1020127004001A priority patent/KR101251443B1/en
Publication of WO2005122267A2 publication Critical patent/WO2005122267A2/en
Publication of WO2005122267A3 publication Critical patent/WO2005122267A3/en
Publication of WO2005122267A8 publication Critical patent/WO2005122267A8/en

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract

A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane gaN films are produced for use as substrates for polarization-free device growth.
PCT/US2005/018823 2004-06-03 2005-05-31 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy WO2005122267A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020077000164A KR101332391B1 (en) 2004-06-03 2005-05-31 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
JP2007515412A JP5461773B2 (en) 2004-06-03 2005-05-31 Growth of flat and low dislocation density m-plane gallium nitride by hydride vapor deposition
KR1020127004001A KR101251443B1 (en) 2004-06-03 2005-05-31 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57668504P 2004-06-03 2004-06-03
US60/576,685 2004-06-03

Publications (3)

Publication Number Publication Date
WO2005122267A2 WO2005122267A2 (en) 2005-12-22
WO2005122267A3 true WO2005122267A3 (en) 2006-08-17
WO2005122267A8 WO2005122267A8 (en) 2007-01-11

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Family Applications (1)

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PCT/US2005/018823 WO2005122267A2 (en) 2004-06-03 2005-05-31 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

Country Status (3)

Country Link
JP (1) JP5461773B2 (en)
KR (2) KR101251443B1 (en)
WO (1) WO2005122267A2 (en)

Cited By (2)

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CN107002275A (en) * 2014-12-04 2017-08-01 希波特公司 Group III-nitride substrate and its manufacture method
CN112397604B (en) * 2020-11-18 2022-05-17 西安电子科技大学 PN junction ultraviolet detector based on m-plane 4H-SiC heteroepitaxy nonpolar AlGaN/BN and preparation method

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EP2595177A3 (en) * 2005-05-17 2013-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
US9673044B2 (en) 2006-04-07 2017-06-06 Sixpoint Materials, Inc. Group III nitride substrates and their fabrication method
KR100809209B1 (en) * 2006-04-25 2008-02-29 삼성전기주식회사 METHOD OF GROWING NON-POLAR m-PLANE NITRIDE SEMICONDUCTOR
KR20090018106A (en) * 2006-05-09 2009-02-19 더 리전츠 오브 더 유니버시티 오브 캘리포니아 In-situ defect reduction techniques for nonpolar and semipolar (al, ga, in)n
JP4713426B2 (en) * 2006-08-30 2011-06-29 京セラ株式会社 Epitaxial substrate and vapor phase growth method
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
JP2008108924A (en) * 2006-10-26 2008-05-08 Matsushita Electric Works Ltd Compound semiconductor light-emitting element, illumination apparatus employing the same and manufacturing method of compound semiconductor light-emitting element
KR100860709B1 (en) 2006-12-21 2008-09-26 주식회사 실트론 Method of growing GaN layer for manufacturing Light Emitting Diode having enhanced light extraction characteristics, Method of manufacturing Light Emitting Diode using the same, and Light Emitting Diode device thereof
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
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US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP4825746B2 (en) * 2007-07-13 2011-11-30 日本碍子株式会社 Method for producing nonpolar group III nitride
JP4825745B2 (en) * 2007-07-13 2011-11-30 日本碍子株式会社 Method for producing nonpolar group III nitride
JP2010538495A (en) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション Multi-junction solar cell
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
JP5295871B2 (en) * 2008-07-03 2013-09-18 古河機械金属株式会社 Method for manufacturing group III nitride semiconductor substrate
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
KR101216541B1 (en) 2008-09-19 2012-12-31 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
JP4647723B2 (en) * 2009-03-06 2011-03-09 パナソニック株式会社 Nitride semiconductor crystal growth method and semiconductor device manufacturing method
EP2415083B1 (en) 2009-04-02 2017-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Devices formed from a non-polar plane of a crystalline material and method of making the same
JP4891462B2 (en) 2009-11-12 2012-03-07 パナソニック株式会社 Gallium nitride compound semiconductor light emitting device
WO2014054284A1 (en) 2012-10-05 2014-04-10 パナソニック株式会社 Nitride semiconductor structure, laminate structure, and nitride semiconductor light-emitting element
JP6137197B2 (en) * 2012-12-17 2017-05-31 三菱化学株式会社 Gallium nitride substrate and method of manufacturing nitride semiconductor crystal
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JP2021519743A (en) * 2018-03-30 2021-08-12 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニアＴｈｅ Ｒｅｇｅｎｔｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｃａｌｉｆｏｒｎｉａ Non-polar and semi-polar device fabrication method using epitaxial transverse overgrowth
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Publication number Priority date Publication date Assignee Title
CN107002275A (en) * 2014-12-04 2017-08-01 希波特公司 Group III-nitride substrate and its manufacture method
CN112397604B (en) * 2020-11-18 2022-05-17 西安电子科技大学 PN junction ultraviolet detector based on m-plane 4H-SiC heteroepitaxy nonpolar AlGaN/BN and preparation method

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Publication number Publication date
KR101332391B1 (en) 2013-11-22
KR20070051831A (en) 2007-05-18
JP2008501606A (en) 2008-01-24
KR101251443B1 (en) 2013-04-08
WO2005122267A2 (en) 2005-12-22
JP5461773B2 (en) 2014-04-02
WO2005122267A8 (en) 2007-01-11
KR20120046748A (en) 2012-05-10

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