WO2005124787A3 - Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor - Google Patents
Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor Download PDFInfo
- Publication number
- WO2005124787A3 WO2005124787A3 PCT/IB2005/051893 IB2005051893W WO2005124787A3 WO 2005124787 A3 WO2005124787 A3 WO 2005124787A3 IB 2005051893 W IB2005051893 W IB 2005051893W WO 2005124787 A3 WO2005124787 A3 WO 2005124787A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrical device
- layer
- punch
- diode
- series
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05745512A EP1759392A2 (en) | 2004-06-16 | 2005-06-09 | Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor |
JP2007516106A JP2008503085A (en) | 2004-06-16 | 2005-06-09 | Electrical device and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04102744 | 2004-06-16 | ||
EP04102744.2 | 2004-06-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005124787A2 WO2005124787A2 (en) | 2005-12-29 |
WO2005124787A3 true WO2005124787A3 (en) | 2006-03-16 |
Family
ID=34979040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2005/051893 WO2005124787A2 (en) | 2004-06-16 | 2005-06-09 | Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1759392A2 (en) |
JP (1) | JP2008503085A (en) |
KR (1) | KR20070049139A (en) |
CN (1) | CN101006517A (en) |
TW (1) | TW200614234A (en) |
WO (1) | WO2005124787A2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8159856B2 (en) | 2009-07-07 | 2012-04-17 | Seagate Technology Llc | Bipolar select device for resistive sense memory |
US8866121B2 (en) | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
US8895949B2 (en) | 2012-02-17 | 2014-11-25 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
US8901530B2 (en) | 2012-01-19 | 2014-12-02 | Sandisk 3D Llc | Nonvolatile memory device using a tunnel oxide as a passive current steering element |
US8912524B2 (en) | 2011-09-01 | 2014-12-16 | Sandisk 3D Llc | Defect gradient to boost nonvolatile memory performance |
US9472301B2 (en) | 2013-02-28 | 2016-10-18 | Sandisk Technologies Llc | Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
US9590013B2 (en) | 2010-08-23 | 2017-03-07 | Crossbar, Inc. | Device switching using layered device structure |
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008135659A (en) * | 2006-11-29 | 2008-06-12 | Sony Corp | Memory element and memory device |
KR100911473B1 (en) * | 2007-06-18 | 2009-08-11 | 삼성전자주식회사 | Phase-change memory unit, method of forming the phase-change memory unit, phase-change memory device having the phase-change memory unit and method of manufacturing the phase-change memory device |
JP2009199695A (en) * | 2008-02-25 | 2009-09-03 | Toshiba Corp | Resistance change memory device |
US7869258B2 (en) * | 2008-06-27 | 2011-01-11 | Sandisk 3D, Llc | Reverse set with current limit for non-volatile storage |
US9030867B2 (en) | 2008-10-20 | 2015-05-12 | Seagate Technology Llc | Bipolar CMOS select device for resistive sense memory |
WO2010137339A1 (en) | 2009-05-28 | 2010-12-02 | パナソニック株式会社 | Memory-cell array, nonvolatile storage device, memory-cell, and manufacturing method of memory-cell array |
US8208285B2 (en) * | 2009-07-13 | 2012-06-26 | Seagate Technology Llc | Vertical non-volatile switch with punchthrough access and method of fabrication therefor |
US8274130B2 (en) | 2009-10-20 | 2012-09-25 | Sandisk 3D Llc | Punch-through diode steering element |
US8017433B2 (en) * | 2010-02-09 | 2011-09-13 | International Business Machines Corporation | Post deposition method for regrowth of crystalline phase change material |
US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
JP5566217B2 (en) * | 2010-07-30 | 2014-08-06 | 株式会社東芝 | Nonvolatile memory device |
JP5075959B2 (en) | 2010-09-14 | 2012-11-21 | 株式会社東芝 | Resistance change memory |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8502185B2 (en) * | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
US8462580B2 (en) * | 2010-11-17 | 2013-06-11 | Sandisk 3D Llc | Memory system with reversible resistivity-switching using pulses of alternatrie polarity |
CN103168359B (en) | 2010-12-03 | 2016-05-04 | 松下知识产权经营株式会社 | Non-volatile memory device and Nonvolatile memory devices and their manufacture method |
CN102623045B (en) * | 2011-01-27 | 2014-10-29 | 中国科学院微电子研究所 | Resistive random access memory unit and memory |
CN102750979B (en) * | 2011-04-21 | 2015-05-13 | 中国科学院微电子研究所 | Resistive random access memory unit |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
WO2013046217A2 (en) * | 2011-06-13 | 2013-04-04 | Indian Institute Of Technology Bombay | Selector device for bipolar rram |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
JP5763004B2 (en) | 2012-03-26 | 2015-08-12 | 株式会社東芝 | Nonvolatile semiconductor memory device |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
US10096653B2 (en) | 2012-08-14 | 2018-10-09 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4254427A (en) * | 1978-02-10 | 1981-03-03 | U.S. Philips Corporation | Semiconductor device having a compact read-only memory |
US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
US6130835A (en) * | 1997-12-02 | 2000-10-10 | International Business Machines Corporation | Voltage biasing for magnetic RAM with magnetic tunnel memory cells |
EP1381054A1 (en) * | 2002-07-12 | 2004-01-14 | Pioneer Corporation | Organic memory device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002541682A (en) * | 1999-04-08 | 2002-12-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Punch-through diode and method of manufacturing the same |
-
2005
- 2005-06-09 KR KR1020077001141A patent/KR20070049139A/en not_active Application Discontinuation
- 2005-06-09 WO PCT/IB2005/051893 patent/WO2005124787A2/en active Application Filing
- 2005-06-09 JP JP2007516106A patent/JP2008503085A/en not_active Withdrawn
- 2005-06-09 CN CNA2005800276523A patent/CN101006517A/en active Pending
- 2005-06-09 EP EP05745512A patent/EP1759392A2/en not_active Withdrawn
- 2005-06-13 TW TW094119530A patent/TW200614234A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4254427A (en) * | 1978-02-10 | 1981-03-03 | U.S. Philips Corporation | Semiconductor device having a compact read-only memory |
US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
US6130835A (en) * | 1997-12-02 | 2000-10-10 | International Business Machines Corporation | Voltage biasing for magnetic RAM with magnetic tunnel memory cells |
EP1381054A1 (en) * | 2002-07-12 | 2004-01-14 | Pioneer Corporation | Organic memory device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8159856B2 (en) | 2009-07-07 | 2012-04-17 | Seagate Technology Llc | Bipolar select device for resistive sense memory |
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US9590013B2 (en) | 2010-08-23 | 2017-03-07 | Crossbar, Inc. | Device switching using layered device structure |
US8866121B2 (en) | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
US8912524B2 (en) | 2011-09-01 | 2014-12-16 | Sandisk 3D Llc | Defect gradient to boost nonvolatile memory performance |
US8901530B2 (en) | 2012-01-19 | 2014-12-02 | Sandisk 3D Llc | Nonvolatile memory device using a tunnel oxide as a passive current steering element |
US8895949B2 (en) | 2012-02-17 | 2014-11-25 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
US9472301B2 (en) | 2013-02-28 | 2016-10-18 | Sandisk Technologies Llc | Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same |
Also Published As
Publication number | Publication date |
---|---|
CN101006517A (en) | 2007-07-25 |
TW200614234A (en) | 2006-05-01 |
JP2008503085A (en) | 2008-01-31 |
EP1759392A2 (en) | 2007-03-07 |
WO2005124787A2 (en) | 2005-12-29 |
KR20070049139A (en) | 2007-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005124787A3 (en) | Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor | |
EP1447851A4 (en) | Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus | |
ATE490555T1 (en) | ELECTRICALLY PROGRAMMABLE FUSED CONNECTION | |
WO2005122236A3 (en) | Semiconductor device with reduced contact resistance | |
TW200725880A (en) | Semiconductor piezoresistive sensor and operation method thereof | |
WO2006020345A3 (en) | Electrical contact encapsulation | |
WO2008099863A1 (en) | Semiconductor, semiconductor device, and complementary transistor circuit device | |
WO2004057618A3 (en) | Electric device comprising a layer of phase change material and method of manufacturing the same | |
AU2002311762A1 (en) | Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same | |
WO2007053339A3 (en) | Method for forming a semiconductor structure and structure thereof | |
WO2008085687A3 (en) | Method of packaging semiconductor devices | |
TW200643992A (en) | Thin film resistor with current density enhancing layer (CDEL) | |
EP2325911A3 (en) | Phase change memory elements using self-aligned phase change material layers and methods of making and using the same | |
WO2004095514A3 (en) | Circuit device with at least partial packaging and method for forming | |
TW200743178A (en) | Semiconductor device | |
TW200703642A (en) | Semiconductor device having a lateral channel and contacts on opposing surfaces thereof | |
EP1755162A3 (en) | Power semiconductor packaging method and structure | |
TW200735282A (en) | Phase-change memory device and method of manufacturing same | |
CA2485678A1 (en) | Electrical connector including thermoplastic elastomer material and associated methods | |
TW200723508A (en) | Phase-change memory device and method of manufacturing same | |
WO2006055179A3 (en) | Methods and structures for electrical communication with an overlying electrode for a semiconductor element | |
TW200715382A (en) | Method of forming a low resistance semiconductor contact and structure therefor | |
TW200723422A (en) | Relay board provided in semiconductor device, semiconductor device, and manufacturing method of semiconductor device | |
WO2006053163A3 (en) | Protection of active layers of memory cells during processing of other elements | |
TW200518228A (en) | Semiconductor device and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2005745512 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007516106 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020077001141 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200580027652.3 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2005745512 Country of ref document: EP |