WO2005124849A2 - System and method for forming multi-component dielectric films - Google Patents
System and method for forming multi-component dielectric films Download PDFInfo
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- WO2005124849A2 WO2005124849A2 PCT/US2005/021291 US2005021291W WO2005124849A2 WO 2005124849 A2 WO2005124849 A2 WO 2005124849A2 US 2005021291 W US2005021291 W US 2005021291W WO 2005124849 A2 WO2005124849 A2 WO 2005124849A2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05763357A EP1756328A2 (en) | 2004-06-15 | 2005-06-15 | System and method for forming multi-component dielectric films |
JP2007516735A JP2008502805A (en) | 2004-06-15 | 2005-06-15 | System and method for forming a multi-component dielectric film |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/829,781 US7470470B2 (en) | 2003-04-21 | 2004-04-21 | System and method for forming multi-component dielectric films |
US10/869,779 US20050070126A1 (en) | 2003-04-21 | 2004-06-15 | System and method for forming multi-component dielectric films |
US10/869,779 | 2004-06-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005124849A2 true WO2005124849A2 (en) | 2005-12-29 |
WO2005124849A3 WO2005124849A3 (en) | 2006-04-06 |
Family
ID=37667919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/021291 WO2005124849A2 (en) | 2004-04-21 | 2005-06-15 | System and method for forming multi-component dielectric films |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1756328A2 (en) |
JP (1) | JP2008502805A (en) |
KR (1) | KR20070037492A (en) |
CN (1) | CN101014730A (en) |
TW (1) | TW200606277A (en) |
WO (1) | WO2005124849A2 (en) |
Cited By (7)
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EP1779419A2 (en) * | 2004-08-16 | 2007-05-02 | Aviza Technology, Inc. | Direct liquid injection system and method for forming multi-component dielectric films |
US7754621B2 (en) * | 2000-04-14 | 2010-07-13 | Asm International N.V. | Process for producing zirconium oxide thin films |
US8409988B2 (en) | 2010-05-25 | 2013-04-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
US8853075B2 (en) | 2008-02-27 | 2014-10-07 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process |
US9279182B2 (en) | 2010-06-01 | 2016-03-08 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Apparatus for forming metal oxide film, method for forming metal oxide film, and metal oxide film |
US9312123B2 (en) | 2008-11-26 | 2016-04-12 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
WO2022231494A1 (en) * | 2021-04-29 | 2022-11-03 | Henrik Pedersen | Method for producing a film of a ternary or quaternary compound by ald |
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TWI467045B (en) * | 2008-05-23 | 2015-01-01 | Sigma Aldrich Co | High-k dielectric films and methods of producing high-k dielectric films using cerium-based precursors |
KR20100091663A (en) | 2009-02-11 | 2010-08-19 | 삼성전자주식회사 | Surface modifying agent, laminated structure using the same, method of manufacturing the structure, and transistor including the same |
CN102453866A (en) * | 2010-10-21 | 2012-05-16 | 中国科学院微电子研究所 | High-dielectric-constant gate dielectric material and preparation method thereof |
CN102352491A (en) * | 2011-11-01 | 2012-02-15 | 嘉兴科民电子设备技术有限公司 | Gas intake method for atomic layer deposition device |
US8632745B1 (en) | 2012-12-21 | 2014-01-21 | Ut-Battelle, Llc | Method and apparatus for controlling stoichiometry in multicomponent materials |
CN103668108A (en) * | 2013-12-10 | 2014-03-26 | 中国科学院微电子研究所 | Atomic layer deposition method of oxide medium |
US9139908B2 (en) * | 2013-12-12 | 2015-09-22 | The Boeing Company | Gradient thin films |
KR101626292B1 (en) * | 2014-06-27 | 2016-06-01 | 신웅철 | The method for forming the igzo thin layer and the igzo thin layer formed thereby |
WO2017037927A1 (en) | 2015-09-03 | 2017-03-09 | 株式会社日立国際電気 | Substrate processing device, recording medium, and method for manufacturing semiconductor device |
US20170073812A1 (en) * | 2015-09-15 | 2017-03-16 | Ultratech, Inc. | Laser-assisted atomic layer deposition of 2D metal chalcogenide films |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5271957A (en) * | 1992-06-18 | 1993-12-21 | Eastman Kodak Company | Chemical vapor deposition of niobium and tantalum oxide films |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6509280B2 (en) * | 2001-02-22 | 2003-01-21 | Samsung Electronics Co., Ltd. | Method for forming a dielectric layer of a semiconductor device |
US6552209B1 (en) * | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
-
2005
- 2005-06-15 CN CNA2005800250400A patent/CN101014730A/en active Pending
- 2005-06-15 KR KR1020077001032A patent/KR20070037492A/en not_active Application Discontinuation
- 2005-06-15 WO PCT/US2005/021291 patent/WO2005124849A2/en active Application Filing
- 2005-06-15 TW TW094119857A patent/TW200606277A/en unknown
- 2005-06-15 EP EP05763357A patent/EP1756328A2/en not_active Withdrawn
- 2005-06-15 JP JP2007516735A patent/JP2008502805A/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5271957A (en) * | 1992-06-18 | 1993-12-21 | Eastman Kodak Company | Chemical vapor deposition of niobium and tantalum oxide films |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6509280B2 (en) * | 2001-02-22 | 2003-01-21 | Samsung Electronics Co., Ltd. | Method for forming a dielectric layer of a semiconductor device |
US6552209B1 (en) * | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
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US7998883B2 (en) | 2000-04-14 | 2011-08-16 | Asm International N.V. | Process for producing zirconium oxide thin films |
EP1779419A4 (en) * | 2004-08-16 | 2009-04-08 | Aviza Tech Inc | Direct liquid injection system and method for forming multi-component dielectric films |
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US8853075B2 (en) | 2008-02-27 | 2014-10-07 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process |
US9443719B2 (en) | 2008-11-26 | 2016-09-13 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device for forming film including at least two different elements |
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US10026607B2 (en) | 2008-11-26 | 2018-07-17 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus for forming film including at least two different elements |
US9384968B2 (en) | 2008-11-26 | 2016-07-05 | Hitachi Kokusai Electric Inc. | Method of manufacturing a semiconductor device by forming a film on a substrate |
US9384970B2 (en) | 2008-11-26 | 2016-07-05 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device by forming a film on a substrate |
US9384969B2 (en) | 2008-11-26 | 2016-07-05 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device by forming a film on a substrate |
US9487861B2 (en) | 2008-11-26 | 2016-11-08 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus capable of forming films including at least two different elements |
US9443720B2 (en) | 2008-11-26 | 2016-09-13 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device for forming film including at least two different elements |
US9478417B2 (en) | 2008-11-26 | 2016-10-25 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device for forming film including at least two different elements |
US8409988B2 (en) | 2010-05-25 | 2013-04-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
US9279182B2 (en) | 2010-06-01 | 2016-03-08 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Apparatus for forming metal oxide film, method for forming metal oxide film, and metal oxide film |
WO2022231494A1 (en) * | 2021-04-29 | 2022-11-03 | Henrik Pedersen | Method for producing a film of a ternary or quaternary compound by ald |
Also Published As
Publication number | Publication date |
---|---|
EP1756328A2 (en) | 2007-02-28 |
KR20070037492A (en) | 2007-04-04 |
JP2008502805A (en) | 2008-01-31 |
CN101014730A (en) | 2007-08-08 |
TW200606277A (en) | 2006-02-16 |
WO2005124849A3 (en) | 2006-04-06 |
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