WO2006016914A3 - Methods for nanowire growth - Google Patents

Methods for nanowire growth Download PDF

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Publication number
WO2006016914A3
WO2006016914A3 PCT/US2005/014925 US2005014925W WO2006016914A3 WO 2006016914 A3 WO2006016914 A3 WO 2006016914A3 US 2005014925 W US2005014925 W US 2005014925W WO 2006016914 A3 WO2006016914 A3 WO 2006016914A3
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WO
WIPO (PCT)
Prior art keywords
thin film
substrate
nanowires
methods
produce
Prior art date
Application number
PCT/US2005/014925
Other languages
French (fr)
Other versions
WO2006016914A2 (en
Inventor
James M Hamilton
Linda T Romano
Original Assignee
Nanosys Inc
James M Hamilton
Linda T Romano
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosys Inc, James M Hamilton, Linda T Romano filed Critical Nanosys Inc
Publication of WO2006016914A2 publication Critical patent/WO2006016914A2/en
Publication of WO2006016914A3 publication Critical patent/WO2006016914A3/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
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Abstract

The present invention is directed to methods to produce, process, and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides a method for producing nanowires that includes providing a thin film of a catalyst material with varying thickness on a substrate, heating the substrate and thin film, such that the thin film disassociates at the relatively thinner regions and vapor depositing a semiconductor onto the substrate to produce nanowires. A method is also provided in which two or more thin films of different materials are overlayed over a substrate, selectively etching the first underlying thin film to create a plurality of islands of the second thin film that mask portions of the first thin film and expose other portions and growing nanowires on the first thin film. Additional methods for producing nanowires are provided.
PCT/US2005/014925 2004-07-07 2005-04-29 Methods for nanowire growth WO2006016914A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US58617004P 2004-07-07 2004-07-07
US60/586,170 2004-07-07
US60545404P 2004-08-30 2004-08-30
US60/605,454 2004-08-30
US65357405P 2005-02-16 2005-02-16
US60/653,574 2005-02-16

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WO2006016914A2 WO2006016914A2 (en) 2006-02-16
WO2006016914A3 true WO2006016914A3 (en) 2009-04-09

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PCT/US2005/014925 WO2006016914A2 (en) 2004-07-07 2005-04-29 Methods for nanowire growth
PCT/US2005/014922 WO2006078281A2 (en) 2004-07-07 2005-04-29 Systems and methods for harvesting and integrating nanowires

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PCT/US2005/014922 WO2006078281A2 (en) 2004-07-07 2005-04-29 Systems and methods for harvesting and integrating nanowires

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US (4) US7344961B2 (en)
EP (1) EP1769530A2 (en)
JP (1) JP2008506254A (en)
AU (1) AU2005325265A1 (en)
CA (1) CA2572798A1 (en)
WO (2) WO2006016914A2 (en)

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