WO2006019624A3 - Method and system for controlling refresh to avoid memory cell data losses - Google Patents

Method and system for controlling refresh to avoid memory cell data losses Download PDF

Info

Publication number
WO2006019624A3
WO2006019624A3 PCT/US2005/024322 US2005024322W WO2006019624A3 WO 2006019624 A3 WO2006019624 A3 WO 2006019624A3 US 2005024322 W US2005024322 W US 2005024322W WO 2006019624 A3 WO2006019624 A3 WO 2006019624A3
Authority
WO
WIPO (PCT)
Prior art keywords
refresh
row
memory cell
memory cells
row addresses
Prior art date
Application number
PCT/US2005/024322
Other languages
French (fr)
Other versions
WO2006019624A2 (en
Inventor
Dean A Klein
Original Assignee
Micron Technology Inc
Dean A Klein
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Dean A Klein filed Critical Micron Technology Inc
Publication of WO2006019624A2 publication Critical patent/WO2006019624A2/en
Publication of WO2006019624A3 publication Critical patent/WO2006019624A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4062—Parity or ECC in refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4068—Voltage or leakage in refresh operations

Abstract

A DRAM includes a register storing subsets of row addresses corresponding to rows containing at least one memory cell that is unable to store a data bit during a normal refresh cycle. Each subset includes all but the most significant bit of a corresponding row address. A refresh counter in the DRAM generates refresh row addresses that are used to refresh rows of memory cells. The refresh row addresses are compared to the subsets of row addresses that are stored in the register. In the event of a match, the row of memory cells corresponding to the matching subset of bits is refreshed. The number of refreshes occurring each refresh cycle will depend upon the number of bits in the subset that are omitted from the row address. The memory cells that are unable to retain data bits are identified by a modified sense amplifier.
PCT/US2005/024322 2004-07-15 2005-07-07 Method and system for controlling refresh to avoid memory cell data losses WO2006019624A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/892,773 2004-07-15
US10/892,773 US7116602B2 (en) 2004-07-15 2004-07-15 Method and system for controlling refresh to avoid memory cell data losses

Publications (2)

Publication Number Publication Date
WO2006019624A2 WO2006019624A2 (en) 2006-02-23
WO2006019624A3 true WO2006019624A3 (en) 2009-04-16

Family

ID=35599238

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/024322 WO2006019624A2 (en) 2004-07-15 2005-07-07 Method and system for controlling refresh to avoid memory cell data losses

Country Status (2)

Country Link
US (9) US7116602B2 (en)
WO (1) WO2006019624A2 (en)

Families Citing this family (211)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7051264B2 (en) * 2001-11-14 2006-05-23 Monolithic System Technology, Inc. Error correcting memory and method of operating same
US7073099B1 (en) * 2002-05-30 2006-07-04 Marvell International Ltd. Method and apparatus for improving memory operation and yield
US6988237B1 (en) 2004-01-06 2006-01-17 Marvell Semiconductor Israel Ltd. Error-correction memory architecture for testing production errors
US7099221B2 (en) 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
US7116602B2 (en) 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
US7797609B2 (en) * 2004-08-19 2010-09-14 Unisys Corporation Apparatus and method for merging data blocks with error correction code protection
US7392456B2 (en) * 2004-11-23 2008-06-24 Mosys, Inc. Predictive error correction code generation facilitating high-speed byte-write in a semiconductor memory
US7734866B2 (en) * 2005-08-04 2010-06-08 Rambus Inc. Memory with address-differentiated refresh rate to accommodate low-retention storage rows
US7444577B2 (en) * 2005-08-04 2008-10-28 Rambus Inc. Memory device testing to support address-differentiated refresh rates
US7565479B2 (en) * 2005-08-04 2009-07-21 Rambus Inc. Memory with refresh cycle donation to accommodate low-retention-storage rows
US7894289B2 (en) * 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data
US7742355B2 (en) * 2007-12-20 2010-06-22 Agere Systems Inc. Dynamic random access memory with low-power refresh
US8031533B2 (en) * 2008-02-14 2011-10-04 Hynix Semiconductor Inc. Input circuit of semiconductor memory apparatus and controlling method thereof
US7990795B2 (en) 2009-02-19 2011-08-02 Freescale Semiconductor, Inc. Dynamic random access memory (DRAM) refresh
US8139399B2 (en) 2009-10-13 2012-03-20 Mosys, Inc. Multiple cycle memory write completion
US8621324B2 (en) 2010-12-10 2013-12-31 Qualcomm Incorporated Embedded DRAM having low power self-correction capability
US8630141B2 (en) 2011-01-28 2014-01-14 Micron Technology, Inc. Circuits and methods for providing refresh addresses and alternate refresh addresses to be refreshed
US8659322B2 (en) * 2011-01-28 2014-02-25 Freescale Semiconductor, Inc. Memory having a latching sense amplifier resistant to negative bias temperature instability and method therefor
EP2721879B1 (en) * 2011-06-17 2015-08-12 Telefonaktiebolaget LM Ericsson (PUBL) Radio base station, user equipment and methods therein
WO2013015893A1 (en) 2011-07-27 2013-01-31 Rambus Inc. Memory with deferred fractional row activation
US9275696B2 (en) 2012-07-26 2016-03-01 Empire Technology Development Llc Energy conservation in a multicore chip
KR102050473B1 (en) 2012-09-24 2019-11-29 삼성전자주식회사 Semiconductor memory device controlling refresh period and memory system
KR102089665B1 (en) * 2012-12-28 2020-04-14 삼성전자주식회사 Memory modules and memory systems
US9324398B2 (en) 2013-02-04 2016-04-26 Micron Technology, Inc. Apparatuses and methods for targeted refreshing of memory
US9158667B2 (en) 2013-03-04 2015-10-13 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9368187B2 (en) 2013-07-11 2016-06-14 Qualcomm Incorporated Insertion-override counter to support multiple memory refresh rates
US9685217B2 (en) * 2013-07-22 2017-06-20 Taiwan Semiconductor Manufacturing Company Ltd. Memory device with over-refresh and method thereof
US8964496B2 (en) 2013-07-26 2015-02-24 Micron Technology, Inc. Apparatuses and methods for performing compare operations using sensing circuitry
US8971124B1 (en) 2013-08-08 2015-03-03 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9047978B2 (en) 2013-08-26 2015-06-02 Micron Technology, Inc. Apparatuses and methods for selective row refreshes
US9153305B2 (en) 2013-08-30 2015-10-06 Micron Technology, Inc. Independently addressable memory array address spaces
US9019785B2 (en) 2013-09-19 2015-04-28 Micron Technology, Inc. Data shifting via a number of isolation devices
WO2015047304A1 (en) * 2013-09-27 2015-04-02 Hewlett-Packard Development Company, L.P. Refresh row address
US9449675B2 (en) 2013-10-31 2016-09-20 Micron Technology, Inc. Apparatuses and methods for identifying an extremum value stored in an array of memory cells
US9430191B2 (en) 2013-11-08 2016-08-30 Micron Technology, Inc. Division operations for memory
US9934856B2 (en) 2014-03-31 2018-04-03 Micron Technology, Inc. Apparatuses and methods for comparing data patterns in memory
JP2015219938A (en) 2014-05-21 2015-12-07 マイクロン テクノロジー， インク． Semiconductor device
US9711206B2 (en) 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry
US9786335B2 (en) 2014-06-05 2017-10-10 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9779019B2 (en) 2014-06-05 2017-10-03 Micron Technology, Inc. Data storage layout
US9455020B2 (en) 2014-06-05 2016-09-27 Micron Technology, Inc. Apparatuses and methods for performing an exclusive or operation using sensing circuitry
US9711207B2 (en) 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry
US9704540B2 (en) 2014-06-05 2017-07-11 Micron Technology, Inc. Apparatuses and methods for parity determination using sensing circuitry
US9910787B2 (en) 2014-06-05 2018-03-06 Micron Technology, Inc. Virtual address table
US10074407B2 (en) 2014-06-05 2018-09-11 Micron Technology, Inc. Apparatuses and methods for performing invert operations using sensing circuitry
US9830999B2 (en) 2014-06-05 2017-11-28 Micron Technology, Inc. Comparison operations in memory
US9496023B2 (en) 2014-06-05 2016-11-15 Micron Technology, Inc. Comparison operations on logical representations of values in memory
US9449674B2 (en) 2014-06-05 2016-09-20 Micron Technology, Inc. Performing logical operations using sensing circuitry
JP2016024837A (en) * 2014-07-22 2016-02-08 マイクロン テクノロジー， インク． Semiconductor device
US9589602B2 (en) 2014-09-03 2017-03-07 Micron Technology, Inc. Comparison operations in memory
US9904515B2 (en) 2014-09-03 2018-02-27 Micron Technology, Inc. Multiplication operations in memory
US9747961B2 (en) 2014-09-03 2017-08-29 Micron Technology, Inc. Division operations in memory
US10068652B2 (en) 2014-09-03 2018-09-04 Micron Technology, Inc. Apparatuses and methods for determining population count
US9898252B2 (en) 2014-09-03 2018-02-20 Micron Technology, Inc. Multiplication operations in memory
US9847110B2 (en) 2014-09-03 2017-12-19 Micron Technology, Inc. Apparatuses and methods for storing a data value in multiple columns of an array corresponding to digits of a vector
US9740607B2 (en) 2014-09-03 2017-08-22 Micron Technology, Inc. Swap operations in memory
US9583219B2 (en) 2014-09-27 2017-02-28 Qualcomm Incorporated Method and apparatus for in-system repair of memory in burst refresh
US9836218B2 (en) 2014-10-03 2017-12-05 Micron Technology, Inc. Computing reduction and prefix sum operations in memory
US9940026B2 (en) 2014-10-03 2018-04-10 Micron Technology, Inc. Multidimensional contiguous memory allocation
US10163467B2 (en) 2014-10-16 2018-12-25 Micron Technology, Inc. Multiple endianness compatibility
US10147480B2 (en) 2014-10-24 2018-12-04 Micron Technology, Inc. Sort operation in memory
US9779784B2 (en) 2014-10-29 2017-10-03 Micron Technology, Inc. Apparatuses and methods for performing logical operations using sensing circuitry
US9747960B2 (en) 2014-12-01 2017-08-29 Micron Technology, Inc. Apparatuses and methods for converting a mask to an index
US10073635B2 (en) 2014-12-01 2018-09-11 Micron Technology, Inc. Multiple endianness compatibility
US10032493B2 (en) 2015-01-07 2018-07-24 Micron Technology, Inc. Longest element length determination in memory
US10061590B2 (en) 2015-01-07 2018-08-28 Micron Technology, Inc. Generating and executing a control flow
US9583163B2 (en) 2015-02-03 2017-02-28 Micron Technology, Inc. Loop structure for operations in memory
EP3254286B1 (en) 2015-02-06 2019-09-11 Micron Technology, INC. Apparatuses and methods for parallel writing to multiple memory device locations
WO2016126472A1 (en) 2015-02-06 2016-08-11 Micron Technology, Inc. Apparatuses and methods for scatter and gather
CN107408404B (en) 2015-02-06 2021-02-12 美光科技公司 Apparatus and methods for memory devices as storage of program instructions
US10522212B2 (en) 2015-03-10 2019-12-31 Micron Technology, Inc. Apparatuses and methods for shift decisions
US9898253B2 (en) 2015-03-11 2018-02-20 Micron Technology, Inc. Division operations on variable length elements in memory
US9741399B2 (en) 2015-03-11 2017-08-22 Micron Technology, Inc. Data shift by elements of a vector in memory
EP3268965A4 (en) 2015-03-12 2018-10-03 Micron Technology, INC. Apparatuses and methods for data movement
US10146537B2 (en) 2015-03-13 2018-12-04 Micron Technology, Inc. Vector population count determination in memory
US10049054B2 (en) 2015-04-01 2018-08-14 Micron Technology, Inc. Virtual register file
US10140104B2 (en) 2015-04-14 2018-11-27 Micron Technology, Inc. Target architecture determination
US9959923B2 (en) 2015-04-16 2018-05-01 Micron Technology, Inc. Apparatuses and methods to reverse data stored in memory
US10073786B2 (en) 2015-05-28 2018-09-11 Micron Technology, Inc. Apparatuses and methods for compute enabled cache
US9704541B2 (en) 2015-06-12 2017-07-11 Micron Technology, Inc. Simulating access lines
US9921777B2 (en) 2015-06-22 2018-03-20 Micron Technology, Inc. Apparatuses and methods for data transfer from sensing circuitry to a controller
US9996479B2 (en) 2015-08-17 2018-06-12 Micron Technology, Inc. Encryption of executables in computational memory
US9891842B2 (en) 2015-09-08 2018-02-13 Micron Technology, Inc. Searching data in parallel using processor-in-memory devices
US10282486B2 (en) 2015-09-08 2019-05-07 Micron Technology, Inc. Methods and apparatuses for searching data stored in a memory array using a replicated data pattern
US9905276B2 (en) 2015-12-21 2018-02-27 Micron Technology, Inc. Control of sensing components in association with performing operations
US9952925B2 (en) 2016-01-06 2018-04-24 Micron Technology, Inc. Error code calculation on sensing circuitry
US10048888B2 (en) 2016-02-10 2018-08-14 Micron Technology, Inc. Apparatuses and methods for partitioned parallel data movement
US9892767B2 (en) 2016-02-12 2018-02-13 Micron Technology, Inc. Data gathering in memory
US9971541B2 (en) 2016-02-17 2018-05-15 Micron Technology, Inc. Apparatuses and methods for data movement
US10956439B2 (en) 2016-02-19 2021-03-23 Micron Technology, Inc. Data transfer with a bit vector operation device
US9899070B2 (en) 2016-02-19 2018-02-20 Micron Technology, Inc. Modified decode for corner turn
US9697876B1 (en) 2016-03-01 2017-07-04 Micron Technology, Inc. Vertical bit vector shift in memory
US9997232B2 (en) 2016-03-10 2018-06-12 Micron Technology, Inc. Processing in memory (PIM) capable memory device having sensing circuitry performing logic operations
US10262721B2 (en) 2016-03-10 2019-04-16 Micron Technology, Inc. Apparatuses and methods for cache invalidate
US10379772B2 (en) 2016-03-16 2019-08-13 Micron Technology, Inc. Apparatuses and methods for operations using compressed and decompressed data
US9910637B2 (en) 2016-03-17 2018-03-06 Micron Technology, Inc. Signed division in memory
US10388393B2 (en) 2016-03-22 2019-08-20 Micron Technology, Inc. Apparatus and methods for debugging on a host and memory device
US10120740B2 (en) 2016-03-22 2018-11-06 Micron Technology, Inc. Apparatus and methods for debugging on a memory device
US11074988B2 (en) 2016-03-22 2021-07-27 Micron Technology, Inc. Apparatus and methods for debugging on a host and memory device
US10977033B2 (en) 2016-03-25 2021-04-13 Micron Technology, Inc. Mask patterns generated in memory from seed vectors
US10474581B2 (en) 2016-03-25 2019-11-12 Micron Technology, Inc. Apparatuses and methods for cache operations
US10074416B2 (en) 2016-03-28 2018-09-11 Micron Technology, Inc. Apparatuses and methods for data movement
US10430244B2 (en) 2016-03-28 2019-10-01 Micron Technology, Inc. Apparatuses and methods to determine timing of operations
JP2017182854A (en) 2016-03-31 2017-10-05 マイクロン テクノロジー， インク． Semiconductor device
US10453502B2 (en) 2016-04-04 2019-10-22 Micron Technology, Inc. Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions
US10607665B2 (en) 2016-04-07 2020-03-31 Micron Technology, Inc. Span mask generation
US9818459B2 (en) 2016-04-19 2017-11-14 Micron Technology, Inc. Invert operations using sensing circuitry
US10153008B2 (en) 2016-04-20 2018-12-11 Micron Technology, Inc. Apparatuses and methods for performing corner turn operations using sensing circuitry
US9659605B1 (en) 2016-04-20 2017-05-23 Micron Technology, Inc. Apparatuses and methods for performing corner turn operations using sensing circuitry
US10042608B2 (en) 2016-05-11 2018-08-07 Micron Technology, Inc. Signed division in memory
US9659610B1 (en) 2016-05-18 2017-05-23 Micron Technology, Inc. Apparatuses and methods for shifting data
US10049707B2 (en) 2016-06-03 2018-08-14 Micron Technology, Inc. Shifting data
US10387046B2 (en) 2016-06-22 2019-08-20 Micron Technology, Inc. Bank to bank data transfer
US10037785B2 (en) 2016-07-08 2018-07-31 Micron Technology, Inc. Scan chain operation in sensing circuitry
US10388360B2 (en) 2016-07-19 2019-08-20 Micron Technology, Inc. Utilization of data stored in an edge section of an array
US10387299B2 (en) 2016-07-20 2019-08-20 Micron Technology, Inc. Apparatuses and methods for transferring data
US10733089B2 (en) 2016-07-20 2020-08-04 Micron Technology, Inc. Apparatuses and methods for write address tracking
US9767864B1 (en) 2016-07-21 2017-09-19 Micron Technology, Inc. Apparatuses and methods for storing a data value in a sensing circuitry element
US9972367B2 (en) 2016-07-21 2018-05-15 Micron Technology, Inc. Shifting data in sensing circuitry
US10303632B2 (en) 2016-07-26 2019-05-28 Micron Technology, Inc. Accessing status information
US10468087B2 (en) 2016-07-28 2019-11-05 Micron Technology, Inc. Apparatuses and methods for operations in a self-refresh state
US9990181B2 (en) 2016-08-03 2018-06-05 Micron Technology, Inc. Apparatuses and methods for random number generation
US11029951B2 (en) 2016-08-15 2021-06-08 Micron Technology, Inc. Smallest or largest value element determination
US10606587B2 (en) 2016-08-24 2020-03-31 Micron Technology, Inc. Apparatus and methods related to microcode instructions indicating instruction types
US10466928B2 (en) 2016-09-15 2019-11-05 Micron Technology, Inc. Updating a register in memory
US10387058B2 (en) 2016-09-29 2019-08-20 Micron Technology, Inc. Apparatuses and methods to change data category values
US10014034B2 (en) 2016-10-06 2018-07-03 Micron Technology, Inc. Shifting data in sensing circuitry
US10529409B2 (en) 2016-10-13 2020-01-07 Micron Technology, Inc. Apparatuses and methods to perform logical operations using sensing circuitry
US9805772B1 (en) 2016-10-20 2017-10-31 Micron Technology, Inc. Apparatuses and methods to selectively perform logical operations
CN207637499U (en) 2016-11-08 2018-07-20 美光科技公司 The equipment for being used to form the computation module above memory cell array
US10423353B2 (en) 2016-11-11 2019-09-24 Micron Technology, Inc. Apparatuses and methods for memory alignment
US9761300B1 (en) 2016-11-22 2017-09-12 Micron Technology, Inc. Data shift apparatuses and methods
US10490251B2 (en) 2017-01-30 2019-11-26 Micron Technology, Inc. Apparatuses and methods for distributing row hammer refresh events across a memory device
US10402340B2 (en) 2017-02-21 2019-09-03 Micron Technology, Inc. Memory array page table walk
US10268389B2 (en) 2017-02-22 2019-04-23 Micron Technology, Inc. Apparatuses and methods for in-memory operations
US10403352B2 (en) 2017-02-22 2019-09-03 Micron Technology, Inc. Apparatuses and methods for compute in data path
US10838899B2 (en) 2017-03-21 2020-11-17 Micron Technology, Inc. Apparatuses and methods for in-memory data switching networks
US10185674B2 (en) 2017-03-22 2019-01-22 Micron Technology, Inc. Apparatus and methods for in data path compute operations
US11222260B2 (en) 2017-03-22 2022-01-11 Micron Technology, Inc. Apparatuses and methods for operating neural networks
US10049721B1 (en) 2017-03-27 2018-08-14 Micron Technology, Inc. Apparatuses and methods for in-memory operations
US10043570B1 (en) 2017-04-17 2018-08-07 Micron Technology, Inc. Signed element compare in memory
US10147467B2 (en) 2017-04-17 2018-12-04 Micron Technology, Inc. Element value comparison in memory
US9997212B1 (en) 2017-04-24 2018-06-12 Micron Technology, Inc. Accessing data in memory
US10942843B2 (en) 2017-04-25 2021-03-09 Micron Technology, Inc. Storing data elements of different lengths in respective adjacent rows or columns according to memory shapes
US10236038B2 (en) 2017-05-15 2019-03-19 Micron Technology, Inc. Bank to bank data transfer
US10068664B1 (en) 2017-05-19 2018-09-04 Micron Technology, Inc. Column repair in memory
US10013197B1 (en) 2017-06-01 2018-07-03 Micron Technology, Inc. Shift skip
US10262701B2 (en) 2017-06-07 2019-04-16 Micron Technology, Inc. Data transfer between subarrays in memory
US10152271B1 (en) 2017-06-07 2018-12-11 Micron Technology, Inc. Data replication
US10318168B2 (en) 2017-06-19 2019-06-11 Micron Technology, Inc. Apparatuses and methods for simultaneous in data path compute operations
US10162005B1 (en) 2017-08-09 2018-12-25 Micron Technology, Inc. Scan chain operations
US10534553B2 (en) 2017-08-30 2020-01-14 Micron Technology, Inc. Memory array accessibility
US10416927B2 (en) 2017-08-31 2019-09-17 Micron Technology, Inc. Processing in memory
US10741239B2 (en) 2017-08-31 2020-08-11 Micron Technology, Inc. Processing in memory device including a row address strobe manager
US10346092B2 (en) 2017-08-31 2019-07-09 Micron Technology, Inc. Apparatuses and methods for in-memory operations using timing circuitry
US10409739B2 (en) 2017-10-24 2019-09-10 Micron Technology, Inc. Command selection policy
US10522210B2 (en) 2017-12-14 2019-12-31 Micron Technology, Inc. Apparatuses and methods for subarray addressing
US10332586B1 (en) 2017-12-19 2019-06-25 Micron Technology, Inc. Apparatuses and methods for subrow addressing
US10580475B2 (en) 2018-01-22 2020-03-03 Micron Technology, Inc. Apparatuses and methods for calculating row hammer refresh addresses in a semiconductor device
US10614875B2 (en) 2018-01-30 2020-04-07 Micron Technology, Inc. Logical operations using memory cells
US10437557B2 (en) 2018-01-31 2019-10-08 Micron Technology, Inc. Determination of a match between data values stored by several arrays
US11194477B2 (en) 2018-01-31 2021-12-07 Micron Technology, Inc. Determination of a match between data values stored by three or more arrays
US10725696B2 (en) 2018-04-12 2020-07-28 Micron Technology, Inc. Command selection policy with read priority
US11017833B2 (en) 2018-05-24 2021-05-25 Micron Technology, Inc. Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling
US10440341B1 (en) 2018-06-07 2019-10-08 Micron Technology, Inc. Image processor formed in an array of memory cells
US11152050B2 (en) 2018-06-19 2021-10-19 Micron Technology, Inc. Apparatuses and methods for multiple row hammer refresh address sequences
US10691532B2 (en) 2018-06-29 2020-06-23 Alibaba Group Holding Limited Storage drive error-correcting code-assisted scrubbing for dynamic random-access memory retention time handling
US11175915B2 (en) 2018-10-10 2021-11-16 Micron Technology, Inc. Vector registers implemented in memory
US10769071B2 (en) 2018-10-10 2020-09-08 Micron Technology, Inc. Coherent memory access
US10483978B1 (en) 2018-10-16 2019-11-19 Micron Technology, Inc. Memory device processing
US10685696B2 (en) 2018-10-31 2020-06-16 Micron Technology, Inc. Apparatuses and methods for access based refresh timing
US10969997B2 (en) * 2018-11-07 2021-04-06 Intel Corporation Memory controller that filters a count of row activate commands collectively sent to a set of memory banks
CN113168861A (en) 2018-12-03 2021-07-23 美光科技公司 Semiconductor device for performing row hammer refresh operation
US11184446B2 (en) 2018-12-05 2021-11-23 Micron Technology, Inc. Methods and apparatus for incentivizing participation in fog networks
CN111354393B (en) 2018-12-21 2023-10-20 美光科技公司 Apparatus and method for timing interleaving for targeted refresh operations
US10770127B2 (en) 2019-02-06 2020-09-08 Micron Technology, Inc. Apparatuses and methods for managing row access counts
US11043254B2 (en) 2019-03-19 2021-06-22 Micron Technology, Inc. Semiconductor device having cam that stores address signals
US11227649B2 (en) 2019-04-04 2022-01-18 Micron Technology, Inc. Apparatuses and methods for staggered timing of targeted refresh operations
US11264096B2 (en) 2019-05-14 2022-03-01 Micron Technology, Inc. Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits
US11158364B2 (en) 2019-05-31 2021-10-26 Micron Technology, Inc. Apparatuses and methods for tracking victim rows
US11069393B2 (en) 2019-06-04 2021-07-20 Micron Technology, Inc. Apparatuses and methods for controlling steal rates
US11158373B2 (en) 2019-06-11 2021-10-26 Micron Technology, Inc. Apparatuses, systems, and methods for determining extremum numerical values
US10832792B1 (en) 2019-07-01 2020-11-10 Micron Technology, Inc. Apparatuses and methods for adjusting victim data
US11139015B2 (en) 2019-07-01 2021-10-05 Micron Technology, Inc. Apparatuses and methods for monitoring word line accesses
US10867655B1 (en) 2019-07-08 2020-12-15 Micron Technology, Inc. Methods and apparatus for dynamically adjusting performance of partitioned memory
US11386946B2 (en) 2019-07-16 2022-07-12 Micron Technology, Inc. Apparatuses and methods for tracking row accesses
US11360768B2 (en) 2019-08-14 2022-06-14 Micron Technolgy, Inc. Bit string operations in memory
US10943636B1 (en) 2019-08-20 2021-03-09 Micron Technology, Inc. Apparatuses and methods for analog row access tracking
US10964378B2 (en) 2019-08-22 2021-03-30 Micron Technology, Inc. Apparatus and method including analog accumulator for determining row access rate and target row address used for refresh operation
US11302374B2 (en) 2019-08-23 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic refresh allocation
US11200942B2 (en) 2019-08-23 2021-12-14 Micron Technology, Inc. Apparatuses and methods for lossy row access counting
US11302377B2 (en) 2019-10-16 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic targeted refresh steals
US11449577B2 (en) 2019-11-20 2022-09-20 Micron Technology, Inc. Methods and apparatus for performing video processing matrix operations within a memory array
US11853385B2 (en) 2019-12-05 2023-12-26 Micron Technology, Inc. Methods and apparatus for performing diversity matrix operations within a memory array
WO2021179213A1 (en) * 2020-03-11 2021-09-16 华为技术有限公司 Method and device for repairing memory chip
US11227641B1 (en) 2020-07-21 2022-01-18 Micron Technology, Inc. Arithmetic operations in memory
US11309010B2 (en) 2020-08-14 2022-04-19 Micron Technology, Inc. Apparatuses, systems, and methods for memory directed access pause
US11348631B2 (en) 2020-08-19 2022-05-31 Micron Technology, Inc. Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed
US11380382B2 (en) 2020-08-19 2022-07-05 Micron Technology, Inc. Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit
US11222682B1 (en) 2020-08-31 2022-01-11 Micron Technology, Inc. Apparatuses and methods for providing refresh addresses
US11557331B2 (en) 2020-09-23 2023-01-17 Micron Technology, Inc. Apparatuses and methods for controlling refresh operations
US11222686B1 (en) 2020-11-12 2022-01-11 Micron Technology, Inc. Apparatuses and methods for controlling refresh timing
US11462291B2 (en) 2020-11-23 2022-10-04 Micron Technology, Inc. Apparatuses and methods for tracking word line accesses
US11264079B1 (en) 2020-12-18 2022-03-01 Micron Technology, Inc. Apparatuses and methods for row hammer based cache lockdown
KR20220091162A (en) 2020-12-23 2022-06-30 삼성전자주식회사 Memory device and method for refreshing operation irrelevant to refresh rate multipliers for temperatatures
US11482275B2 (en) 2021-01-20 2022-10-25 Micron Technology, Inc. Apparatuses and methods for dynamically allocated aggressor detection
US11600314B2 (en) 2021-03-15 2023-03-07 Micron Technology, Inc. Apparatuses and methods for sketch circuits for refresh binning
DE102021207115A1 (en) 2021-07-07 2023-01-12 Robert Bosch Gesellschaft mit beschränkter Haftung Method and device for operating a memory device
US11664063B2 (en) 2021-08-12 2023-05-30 Micron Technology, Inc. Apparatuses and methods for countering memory attacks
US11688451B2 (en) 2021-11-29 2023-06-27 Micron Technology, Inc. Apparatuses, systems, and methods for main sketch and slim sketch circuit for row address tracking

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596521A (en) * 1994-01-06 1997-01-21 Oki Electric Industry Co., Ltd. Semiconductor memory with built-in cache
US7095669B2 (en) * 2003-11-07 2006-08-22 Infineon Technologies Ag Refresh for dynamic cells with weak retention

Family Cites Families (222)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4006468A (en) 1973-08-06 1977-02-01 Honeywell Information Systems, Inc. Dynamic memory initializing apparatus
JPS55150192A (en) * 1979-05-08 1980-11-21 Nec Corp Memory unit
US4313464A (en) * 1979-11-06 1982-02-02 Emery Major Fluid control apparatus
US4380812A (en) 1980-04-25 1983-04-19 Data General Corporation Refresh and error detection and correction technique for a data processing system
US4493081A (en) 1981-06-26 1985-01-08 Computer Automation, Inc. Dynamic memory with error correction on refresh
US4433211A (en) * 1981-11-04 1984-02-21 Technical Communications Corporation Privacy communication system employing time/frequency transformation
JPS59117800A (en) * 1982-12-25 1984-07-07 Fujitsu Ltd One-bit error processing system of buffer storage
JPS59165300A (en) 1983-03-10 1984-09-18 Fujitsu Ltd Memory fault correcting system
JPS6134793A (en) 1984-07-27 1986-02-19 Hitachi Ltd Diagnosing and error correcting device in dynamic memory device
JPS61134988A (en) 1984-12-04 1986-06-23 Toshiba Corp Error detecting/correction function controlling system of dynamic type memory
JPS6246357A (en) 1985-08-23 1987-02-28 Hitachi Vlsi Eng Corp Semiconductor memory device
US4710934A (en) 1985-11-08 1987-12-01 Texas Instruments Incorporated Random access memory with error correction capability
JPH0612613B2 (en) * 1986-03-18 1994-02-16 富士通株式会社 Semiconductor memory device
JPS62251949A (en) * 1986-04-25 1987-11-02 Mitsubishi Electric Corp Error correcting method for memory device
JPS63285800A (en) * 1987-05-19 1988-11-22 Fujitsu Ltd Semiconductor memory device
JPH071640B2 (en) 1987-06-03 1995-01-11 三菱電機株式会社 Defect relief device for semiconductor memory device
US4862463A (en) * 1987-07-20 1989-08-29 International Business Machines Corp. Error correcting code for 8-bit-per-chip memory with reduced redundancy
KR970003710B1 (en) * 1987-09-04 1997-03-21 미다 가쓰시게 Low noise semiconductor memory
JPH01171199A (en) 1987-12-25 1989-07-06 Mitsubishi Electric Corp Semiconductor memory
JPH01194194A (en) * 1988-01-29 1989-08-04 Nec Ic Microcomput Syst Ltd Semiconductor memory device
JPH01201736A (en) 1988-02-08 1989-08-14 Mitsubishi Electric Corp Microcomputer
US4888773A (en) 1988-06-15 1989-12-19 International Business Machines Corporation Smart memory card architecture and interface
US5068855A (en) 1988-07-18 1991-11-26 Canon Kabushiki Kaisha Error correcting method and apparatus
US5208782A (en) * 1989-02-09 1993-05-04 Hitachi, Ltd. Semiconductor integrated circuit device having a plurality of memory blocks and a lead on chip (LOC) arrangement
CA2019351A1 (en) * 1989-07-06 1991-01-06 Francis H. Reiff Fault tolerant memory
JPH03162800A (en) 1989-08-29 1991-07-12 Mitsubishi Electric Corp Semiconductor memory device
US5127014A (en) 1990-02-13 1992-06-30 Hewlett-Packard Company Dram on-chip error correction/detection
JP2830308B2 (en) * 1990-02-26 1998-12-02 日本電気株式会社 Information processing device
JP2862948B2 (en) * 1990-04-13 1999-03-03 三菱電機株式会社 Semiconductor storage device
US5307356A (en) * 1990-04-16 1994-04-26 International Business Machines Corporation Interlocked on-chip ECC system
US5291498A (en) * 1991-01-29 1994-03-01 Convex Computer Corporation Error detecting method and apparatus for computer memory having multi-bit output memory circuits
US5418796A (en) * 1991-03-26 1995-05-23 International Business Machines Corporation Synergistic multiple bit error correction for memory of array chips
US5278796A (en) * 1991-04-12 1994-01-11 Micron Technology, Inc. Temperature-dependent DRAM refresh circuit
US5335201A (en) * 1991-04-15 1994-08-02 Micron Technology, Inc. Method for providing synchronous refresh cycles in self-refreshing interruptable DRAMs
US5313624A (en) * 1991-05-14 1994-05-17 Next Computer, Inc. DRAM multiplexer
US5359569A (en) * 1991-10-29 1994-10-25 Hitachi Ltd. Semiconductor memory
US5313475A (en) * 1991-10-31 1994-05-17 International Business Machines Corporation ECC function with self-contained high performance partial write or read/modify/write and parity look-ahead interface scheme
US5321661A (en) * 1991-11-20 1994-06-14 Oki Electric Industry Co., Ltd. Self-refreshing memory with on-chip timer test circuit
KR950003013B1 (en) * 1992-03-30 1995-03-29 삼성전자 주식회사 Eeprom with error correcting circuit
US5459742A (en) 1992-06-11 1995-10-17 Quantum Corporation Solid state disk memory using storage devices with defects
US5754753A (en) * 1992-06-11 1998-05-19 Digital Equipment Corporation Multiple-bit error correction in computer main memory
US5369651A (en) 1992-06-30 1994-11-29 Intel Corporation Multiplexed byte enable bus for partial word writes to ECC protected memory
JP2816512B2 (en) * 1992-07-27 1998-10-27 三菱電機株式会社 Semiconductor storage device
KR960000681B1 (en) * 1992-11-23 1996-01-11 삼성전자주식회사 Semiconductor memory device with improved yield and the cell
US5588112A (en) 1992-12-30 1996-12-24 Digital Equipment Corporation DMA controller for memory scrubbing
US5331601A (en) * 1993-02-04 1994-07-19 United Memories, Inc. DRAM variable row select
US5428630A (en) * 1993-07-01 1995-06-27 Quantum Corp. System and method for verifying the integrity of data written to a memory
US5602857A (en) * 1993-09-21 1997-02-11 Cirrus Logic, Inc. Error correction method and apparatus
US6085283A (en) 1993-11-19 2000-07-04 Kabushiki Kaisha Toshiba Data selecting memory device and selected data transfer device
US5481552A (en) * 1993-12-30 1996-01-02 International Business Machines Corporation Method and structure for providing error correction code for 8-byte data words on SIMM cards
US5623506A (en) * 1994-01-28 1997-04-22 International Business Machines Corporation Method and structure for providing error correction code within a system having SIMMs
US5446695A (en) 1994-03-22 1995-08-29 International Business Machines Corporation Memory device with programmable self-refreshing and testing methods therefore
GB2289779B (en) * 1994-05-24 1999-04-28 Intel Corp Method and apparatus for automatically scrubbing ECC errors in memory via hardware
JP3328093B2 (en) * 1994-07-12 2002-09-24 三菱電機株式会社 Error correction device
US5455801A (en) 1994-07-15 1995-10-03 Micron Semiconductor, Inc. Circuit having a control array of memory cells and a current source and a method for generating a self-refresh timing signal
EP0704854B1 (en) * 1994-09-30 1999-12-01 STMicroelectronics S.r.l. Memory device having error detection and correction function, and methods for writing and erasing the memory device
JP2570634B2 (en) * 1994-10-24 1997-01-08 日本電気株式会社 Semiconductor storage device
US5513135A (en) * 1994-12-02 1996-04-30 International Business Machines Corporation Synchronous memory packaged in single/dual in-line memory module and method of fabrication
JP3714489B2 (en) * 1995-03-03 2005-11-09 株式会社日立製作所 Dynamic RAM and memory module
US5606532A (en) * 1995-03-17 1997-02-25 Atmel Corporation EEPROM array with flash-like core
DE19518348C1 (en) * 1995-05-18 1996-08-22 Siemens Ag Memory with random access and read only modes
US5841418A (en) 1995-06-07 1998-11-24 Cirrus Logic, Inc. Dual displays having independent resolutions and refresh rates
US6810449B1 (en) * 1995-10-19 2004-10-26 Rambus, Inc. Protocol for communication with dynamic memory
JPH09180442A (en) * 1995-12-25 1997-07-11 Fujitsu Ltd Volatile memory device and its refreshing method
JPH09204367A (en) * 1996-01-25 1997-08-05 Mitsubishi Electric Corp Method for refreshing flash memory data in flash disk card
JP2876522B2 (en) * 1996-02-14 1999-03-31 ローム株式会社 IC with built-in overvoltage detection circuit
US5644545A (en) * 1996-02-14 1997-07-01 United Memories, Inc. Bimodal refresh circuit and method for using same to reduce standby current and enhance yields of dynamic memory products
TW318933B (en) * 1996-03-08 1997-11-01 Hitachi Ltd Semiconductor IC device having a memory and a logic circuit implemented with a single chip
US5748547A (en) * 1996-05-24 1998-05-05 Shau; Jeng-Jye High performance semiconductor memory devices having multiple dimension bit lines
US5740188A (en) * 1996-05-29 1998-04-14 Compaq Computer Corporation Error checking and correcting for burst DRAM devices
US5953278A (en) * 1996-07-11 1999-09-14 Texas Instruments Incorporated Data sequencing and registering in a four bit pre-fetch SDRAM
KR19990071622A (en) * 1996-09-24 1999-09-27 야스카와 히데아키 Projection display with light source
US6397357B1 (en) * 1996-10-08 2002-05-28 Dell Usa, L.P. Method of testing detection and correction capabilities of ECC memory controller
US5784391A (en) * 1996-10-08 1998-07-21 International Business Machines Corporation Distributed memory system with ECC and method of operation
US5754567A (en) * 1996-10-15 1998-05-19 Micron Quantum Devices, Inc. Write reduction in flash memory systems through ECC usage
US5864569A (en) * 1996-10-18 1999-01-26 Micron Technology, Inc. Method and apparatus for performing error correction on data read from a multistate memory
US6839875B2 (en) 1996-10-18 2005-01-04 Micron Technology, Inc. Method and apparatus for performing error correction on data read from a multistate memory
US5808952A (en) * 1996-10-28 1998-09-15 Silicon Magic Corporation Adaptive auto refresh
US5784328A (en) * 1996-12-23 1998-07-21 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array
US5961660A (en) 1997-03-03 1999-10-05 International Business Machines Corporation Method and apparatus for optimizing ECC memory performance
US6279134B1 (en) * 1998-03-02 2001-08-21 Hitachi, Ltd. Storage device and storage subsystem for efficiently writing error correcting code
US5896404A (en) * 1997-04-04 1999-04-20 International Business Machines Corporation Programmable burst length DRAM
US5912906A (en) * 1997-06-23 1999-06-15 Sun Microsystems, Inc. Method and apparatus for recovering from correctable ECC errors
US6044429A (en) * 1997-07-10 2000-03-28 Micron Technology, Inc. Method and apparatus for collision-free data transfers in a memory device with selectable data or address paths
US6442644B1 (en) * 1997-08-11 2002-08-27 Advanced Memory International, Inc. Memory system having synchronous-link DRAM (SLDRAM) devices and controller
US5878059A (en) * 1997-09-24 1999-03-02 Emc Corporation Method and apparatus for pipelining an error detection algorithm on an n-bit word stored in memory
JP3184129B2 (en) * 1997-09-29 2001-07-09 甲府日本電気株式会社 Storage device
US6041430A (en) 1997-11-03 2000-03-21 Sun Microsystems, Inc. Error detection and correction code for data and check code fields
EP0917059A1 (en) * 1997-11-14 1999-05-19 Nec Corporation A semiconductor memory device having an ECC circuit
US6052815A (en) * 1997-11-14 2000-04-18 Cirrus Logic, Inc. ECC system for generating a CRC syndrome over randomized data in a computer storage device
US6009547A (en) 1997-12-03 1999-12-28 International Business Machines Corporation ECC in memory arrays having subsequent insertion of content
US6018817A (en) 1997-12-03 2000-01-25 International Business Machines Corporation Error correcting code retrofit method and apparatus for multiple memory configurations
JP3194368B2 (en) * 1997-12-12 2001-07-30 日本電気株式会社 Semiconductor memory device and driving method thereof
KR100266748B1 (en) * 1997-12-31 2000-10-02 윤종용 Semiconductor memory device and error correction method thereof
JP3177207B2 (en) * 1998-01-27 2001-06-18 インターナショナル・ビジネス・マシーンズ・コーポレ−ション Refresh interval control apparatus and method, and computer
US5909404A (en) * 1998-03-27 1999-06-01 Lsi Logic Corporation Refresh sampling built-in self test and repair circuit
US6085334A (en) * 1998-04-17 2000-07-04 Motorola, Inc. Method and apparatus for testing an integrated memory device
US6397364B1 (en) * 1998-04-20 2002-05-28 Mordecai Barkan Digital data representation for multi-bit data storage and transmission
US6125467A (en) * 1998-04-21 2000-09-26 International Business Machines Corporation Method and apparatus for partial word read through ECC block
KR100273293B1 (en) * 1998-05-13 2001-01-15 김영환 Refresh scheme of redundant word lines
US6216247B1 (en) * 1998-05-29 2001-04-10 Intel Corporation 32-bit mode for a 64-bit ECC capable memory subsystem
US6134167A (en) 1998-06-04 2000-10-17 Compaq Computer Corporation Reducing power consumption in computer memory
US6092231A (en) * 1998-06-12 2000-07-18 Qlogic Corporation Circuit and method for rapid checking of error correction codes using cyclic redundancy check
US6137739A (en) * 1998-06-29 2000-10-24 Hyundai Electronics Industries Co., Ltd. Multilevel sensing circuit and method thereof
KR100287018B1 (en) * 1998-08-07 2001-04-16 윤종용 Semiconductor memory device with error correction circuit
US5912606A (en) 1998-08-18 1999-06-15 Northrop Grumman Corporation Mercury wetted switch
JP2000137983A (en) 1998-08-26 2000-05-16 Toshiba Corp Semiconductor storage
US6223309B1 (en) * 1998-10-02 2001-04-24 International Business Machines Corporation Method and apparatus for ECC logic test
KR100317195B1 (en) 1998-10-28 2002-02-28 박종섭 Refresh control circuit of semiconductor memory
JP2000163965A (en) * 1998-11-27 2000-06-16 Mitsubishi Electric Corp Synchronous semiconductor storage
US6349390B1 (en) * 1999-01-04 2002-02-19 International Business Machines Corporation On-board scrubbing of soft errors memory module
US6212631B1 (en) * 1999-01-15 2001-04-03 Dell Usa, L.P. Method and apparatus for automatic L2 cache ECC configuration in a computer system
WO2000045437A1 (en) * 1999-01-26 2000-08-03 Hitachi, Ltd. Method of setting back bias of mos circuit, and mos integrated circuit
US6041001A (en) * 1999-02-25 2000-03-21 Lexar Media, Inc. Method of increasing data reliability of a flash memory device without compromising compatibility
US6353910B1 (en) * 1999-04-09 2002-03-05 International Business Machines Corporation Method and apparatus for implementing error correction coding (ECC) in a dynamic random access memory utilizing vertical ECC storage
JP4056173B2 (en) * 1999-04-14 2008-03-05 富士通株式会社 Semiconductor memory device and method for refreshing semiconductor memory device
JP4105819B2 (en) * 1999-04-26 2008-06-25 株式会社ルネサステクノロジ Storage device and memory card
KR100322530B1 (en) 1999-05-11 2002-03-18 윤종용 Data Input Circuit of Semiconductor memory device &Data input Method using the same
US6397365B1 (en) * 1999-05-18 2002-05-28 Hewlett-Packard Company Memory error correction using redundant sliced memory and standard ECC mechanisms
JP2000331494A (en) * 1999-05-19 2000-11-30 Nec Corp Semiconductor memory
US6279072B1 (en) * 1999-07-22 2001-08-21 Micron Technology, Inc. Reconfigurable memory with selectable error correction storage
JP2001052476A (en) 1999-08-05 2001-02-23 Mitsubishi Electric Corp Semiconductor device
KR100322542B1 (en) * 1999-08-11 2002-03-18 윤종용 Synchronous DRAM having ECC circuit implementing high speed pipeline operation and method of error check and correction of thereof
US6166908A (en) 1999-10-01 2000-12-26 Intel Corporation Integrated circuit cartridge
JP4707204B2 (en) * 1999-10-08 2011-06-22 富士通セミコンダクター株式会社 Semiconductor memory device
JP2001126471A (en) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp Semiconductor integrated ciruit
JP4421036B2 (en) 1999-11-17 2010-02-24 富士通マイクロエレクトロニクス株式会社 Data writing method for semiconductor memory device and semiconductor memory device
JP4090165B2 (en) 1999-11-22 2008-05-28 富士通株式会社 Semiconductor memory device
TW522399B (en) 1999-12-08 2003-03-01 Hitachi Ltd Semiconductor device
US6845472B2 (en) 2000-01-25 2005-01-18 Hewlett-Packard Development Company, L.P. Memory sub-system error cleansing
US6715116B2 (en) * 2000-01-26 2004-03-30 Hewlett-Packard Company, L.P. Memory data verify operation
US6662333B1 (en) 2000-02-04 2003-12-09 Hewlett-Packard Development Company, L.P. Shared error correction for memory design
US6701480B1 (en) * 2000-03-08 2004-03-02 Rockwell Automation Technologies, Inc. System and method for providing error check and correction in memory systems
US6681332B1 (en) 2000-03-13 2004-01-20 Analog Devices, Inc. System and method to place a device in power down modes/states and restore back to first mode/state within user-controlled time window
JP2001351398A (en) 2000-06-12 2001-12-21 Nec Corp Storage device
US6594796B1 (en) * 2000-06-30 2003-07-15 Oak Technology, Inc. Simultaneous processing for error detection and P-parity and Q-parity ECC encoding
KR100515072B1 (en) * 2000-06-30 2005-09-16 주식회사 하이닉스반도체 Semiconductor memory device for saving power consumption in refresh operation
JP4707803B2 (en) * 2000-07-10 2011-06-22 エルピーダメモリ株式会社 Error rate determination method and semiconductor integrated circuit device
US6715104B2 (en) * 2000-07-25 2004-03-30 International Business Machines Corporation Memory access system
JP3595495B2 (en) * 2000-07-27 2004-12-02 Ｎｅｃマイクロシステム株式会社 Semiconductor storage device
JP4569915B2 (en) * 2000-08-11 2010-10-27 エルピーダメモリ株式会社 Semiconductor memory device
JP2002056671A (en) * 2000-08-14 2002-02-22 Hitachi Ltd Method for holding data for dynamic ram and semiconductor integrated circuit device
US6785837B1 (en) 2000-11-20 2004-08-31 International Business Machines Corporation Fault tolerant memory system utilizing memory arrays with hard error detection
US6799291B1 (en) 2000-11-20 2004-09-28 International Business Machines Corporation Method and system for detecting a hard failure in a memory array
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6591394B2 (en) * 2000-12-22 2003-07-08 Matrix Semiconductor, Inc. Three-dimensional memory array and method for storing data bits and ECC bits therein
US7028248B2 (en) 2001-02-28 2006-04-11 International Business Machines Corporation Multi-cycle symbol level error correction and memory system
US6449203B1 (en) * 2001-03-08 2002-09-10 Micron Technology, Inc. Refresh controller and address remapping circuit and method for dual mode full/reduced density DRAMs
US6754858B2 (en) * 2001-03-29 2004-06-22 International Business Machines Corporation SDRAM address error detection method and apparatus
US6792567B2 (en) 2001-04-30 2004-09-14 Stmicroelectronics, Inc. System and method for correcting soft errors in random access memory devices
US6557072B2 (en) * 2001-05-10 2003-04-29 Palm, Inc. Predictive temperature compensation for memory devices systems and method
US7117420B1 (en) * 2001-05-17 2006-10-03 Lsi Logic Corporation Construction of an optimized SEC-DED code and logic for soft errors in semiconductor memories
US6957378B2 (en) 2001-06-04 2005-10-18 Kabushiki Kaisha Toshiba Semiconductor memory device
US6697926B2 (en) * 2001-06-06 2004-02-24 Micron Technology, Inc. Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device
JP2002373489A (en) * 2001-06-15 2002-12-26 Mitsubishi Electric Corp Semiconductor memory
US6628558B2 (en) 2001-06-20 2003-09-30 Cypress Semiconductor Corp. Proportional to temperature voltage generator
KR100429872B1 (en) * 2001-06-27 2004-05-04 삼성전자주식회사 Memory system for promoting efficiency of use of semiconductor memory and refresh method of the semiconductor memory
US20030009721A1 (en) * 2001-07-06 2003-01-09 International Business Machines Corporation Method and system for background ECC scrubbing for a memory array
US6940774B2 (en) * 2001-07-26 2005-09-06 Infineon Technologies Ag Integrated dynamic memory and operating method
KR100448702B1 (en) 2001-08-01 2004-09-16 삼성전자주식회사 Semiconductor memory device and write latency control method thereof
JP2003068076A (en) 2001-08-27 2003-03-07 Elpida Memory Inc Power control method for semiconductor memory, and semiconductor memory
JP2003068077A (en) * 2001-08-28 2003-03-07 Mitsubishi Electric Corp Semiconductor memory
US6646942B2 (en) * 2001-10-09 2003-11-11 Micron Technology, Inc. Method and circuit for adjusting a self-refresh rate to maintain dynamic data at low supply voltages
DE10152335B4 (en) * 2001-10-24 2004-11-18 Siemens Ag Method and system for monitoring the wheels of a motor vehicle
US6560155B1 (en) * 2001-10-24 2003-05-06 Micron Technology, Inc. System and method for power saving memory refresh for dynamic random access memory devices after an extended interval
US7051264B2 (en) * 2001-11-14 2006-05-23 Monolithic System Technology, Inc. Error correcting memory and method of operating same
US6650587B2 (en) * 2001-11-19 2003-11-18 Micron Technology, Inc. Partial array self-refresh
US6848063B2 (en) * 2001-11-20 2005-01-25 Hewlett-Packard Development Company, L.P. System and method for scrubbing errors in very large memories
JP4112849B2 (en) * 2001-11-21 2008-07-02 株式会社東芝 Semiconductor memory device
JP2003173317A (en) * 2001-12-05 2003-06-20 Elpida Memory Inc Unbuffered memory system
US6545899B1 (en) 2001-12-12 2003-04-08 Micron Technology, Inc. ROM embedded DRAM with bias sensing
US6909656B2 (en) * 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US7171605B2 (en) * 2002-02-01 2007-01-30 International Business Machines Corporation Check bit free error correction for sleep mode data retention
US6603694B1 (en) * 2002-02-05 2003-08-05 Infineon Technologies North America Corp. Dynamic memory refresh circuitry
US6590294B1 (en) 2002-02-13 2003-07-08 Industrial Technology Research Institute Device for bump probing and method of fabrication
US6618314B1 (en) * 2002-03-04 2003-09-09 Cypress Semiconductor Corp. Method and architecture for reducing the power consumption for memory devices in refresh operations
US6971041B2 (en) * 2002-03-04 2005-11-29 International Business Machines Corporation Cache entry error-correcting code (ECC) based at least on cache entry data and memory address
DE10210726B4 (en) * 2002-03-12 2005-02-17 Infineon Technologies Ag Latency timer for an S-DRAM
JP4141724B2 (en) * 2002-04-05 2008-08-27 株式会社ルネサステクノロジ Semiconductor memory device
US6838331B2 (en) 2002-04-09 2005-01-04 Micron Technology, Inc. Method and system for dynamically operating memory in a power-saving error correction mode
US6751143B2 (en) * 2002-04-11 2004-06-15 Micron Technology, Inc. Method and system for low power refresh of dynamic random access memories
US6618281B1 (en) 2002-05-15 2003-09-09 International Business Machines Corporation Content addressable memory (CAM) with error checking and correction (ECC) capability
JP3914839B2 (en) * 2002-07-11 2007-05-16 エルピーダメモリ株式会社 Semiconductor memory device
US6929023B2 (en) * 2002-08-07 2005-08-16 Polycheck Corporation Back flow prevention device for pipelines conveying fluids
US7206891B2 (en) * 2002-09-26 2007-04-17 Lsi Logic Corporation Multi-port memory controller having independent ECC encoders
US6920523B2 (en) * 2002-10-07 2005-07-19 Infineon Technologies Ag Bank address mapping according to bank retention time in dynamic random access memories
US20040083334A1 (en) * 2002-10-28 2004-04-29 Sandisk Corporation Method and apparatus for managing the integrity of data in non-volatile memory system
JP4205396B2 (en) * 2002-10-30 2009-01-07 エルピーダメモリ株式会社 Semiconductor integrated circuit device
US20040098654A1 (en) * 2002-11-14 2004-05-20 Der-Kant Cheng FIFO memory with ECC function
CA2447204C (en) * 2002-11-29 2010-03-23 Memory Management Services Ltd. Error correction scheme for memory
US6934199B2 (en) * 2002-12-11 2005-08-23 Micron Technology, Inc. Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency
US7096407B2 (en) * 2003-02-18 2006-08-22 Hewlett-Packard Development Company, L.P. Technique for implementing chipkill in a memory system
US6778457B1 (en) * 2003-02-19 2004-08-17 Freescale Semiconductor, Inc. Variable refresh control for a memory
US6781908B1 (en) * 2003-02-19 2004-08-24 Freescale Semiconductor, Inc. Memory having variable refresh control and method therefor
US6940773B2 (en) 2003-04-02 2005-09-06 Infineon Technologies Ag Method and system for manufacturing DRAMs with reduced self-refresh current requirements
JP4400081B2 (en) * 2003-04-08 2010-01-20 エルピーダメモリ株式会社 Semiconductor memory device
US7272773B2 (en) * 2003-04-17 2007-09-18 International Business Machines Corporation Cache directory array recovery mechanism to support special ECC stuck bit matrix
EP1473739A1 (en) 2003-04-29 2004-11-03 Dialog Semiconductor GmbH Flash memory with pre-detection for data loss
KR100497164B1 (en) * 2003-04-30 2005-06-23 주식회사 하이닉스반도체 Circuit for semiconductor memory device and a method for operating the same
US20040225944A1 (en) 2003-05-09 2004-11-11 Brueggen Christopher M. Systems and methods for processing an error correction code word for storage in memory components
US6704230B1 (en) * 2003-06-12 2004-03-09 International Business Machines Corporation Error detection and correction method and apparatus in a magnetoresistive random access memory
US6954387B2 (en) * 2003-07-15 2005-10-11 International Business Machines Corporation Dynamic random access memory with smart refresh scheduler
US7231488B2 (en) * 2003-09-15 2007-06-12 Infineon Technologies Ag Self-refresh system and method for dynamic random access memory
JP4478974B2 (en) * 2004-01-30 2010-06-09 エルピーダメモリ株式会社 Semiconductor memory device and refresh control method thereof
US7099221B2 (en) * 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
JP4191100B2 (en) * 2004-06-18 2008-12-03 エルピーダメモリ株式会社 Semiconductor memory device
JP4237109B2 (en) 2004-06-18 2009-03-11 エルピーダメモリ株式会社 Semiconductor memory device and refresh cycle control method
US20060010339A1 (en) 2004-06-24 2006-01-12 Klein Dean A Memory system and method having selective ECC during low power refresh
US7340668B2 (en) 2004-06-25 2008-03-04 Micron Technology, Inc. Low power cost-effective ECC memory system and method
US7116602B2 (en) * 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
US6965537B1 (en) 2004-08-31 2005-11-15 Micron Technology, Inc. Memory system and method using ECC to achieve low power refresh
DE102004054968B4 (en) * 2004-11-13 2006-11-02 Infineon Technologies Ag Method for repairing and operating a memory device
KR100655288B1 (en) * 2004-11-16 2006-12-08 삼성전자주식회사 Logic embedded memory for controlling self-refresh operation and memory system including the same
KR100689708B1 (en) * 2005-01-05 2007-03-08 삼성전자주식회사 Semiconductor device
KR100610024B1 (en) * 2005-01-27 2006-08-08 삼성전자주식회사 Semiconductor memory device having self refresh mode and method for operating the same
JP2006209900A (en) * 2005-01-31 2006-08-10 Matsushita Electric Ind Co Ltd Memory circuit
US7444577B2 (en) * 2005-08-04 2008-10-28 Rambus Inc. Memory device testing to support address-differentiated refresh rates
US7478285B2 (en) * 2005-12-30 2009-01-13 Silicon Graphics, Inc. Generation and use of system level defect tables for main memory
US7453758B2 (en) 2006-02-21 2008-11-18 Infineon Technologies Ag Control system for a dynamic random access memory and method of operation thereof
US7894289B2 (en) * 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) * 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data
US8174362B2 (en) * 2008-03-06 2012-05-08 Round Rock Research, Llc Methods and apparatuses to secure data transmission in RFID systems

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596521A (en) * 1994-01-06 1997-01-21 Oki Electric Industry Co., Ltd. Semiconductor memory with built-in cache
US7095669B2 (en) * 2003-11-07 2006-08-22 Infineon Technologies Ag Refresh for dynamic cells with weak retention

Also Published As

Publication number Publication date
US8446783B2 (en) 2013-05-21
US7116602B2 (en) 2006-10-03
US7623392B2 (en) 2009-11-24
US20060013052A1 (en) 2006-01-19
US20060158950A1 (en) 2006-07-20
US7280386B2 (en) 2007-10-09
US7898892B2 (en) 2011-03-01
US20080151671A1 (en) 2008-06-26
US7558142B2 (en) 2009-07-07
US20130003467A1 (en) 2013-01-03
US20060158949A1 (en) 2006-07-20
US8279683B2 (en) 2012-10-02
US7272066B2 (en) 2007-09-18
US20080002503A1 (en) 2008-01-03
US20100054070A1 (en) 2010-03-04
US20110134708A1 (en) 2011-06-09
US7277345B2 (en) 2007-10-02
US20060152989A1 (en) 2006-07-13
WO2006019624A2 (en) 2006-02-23

Similar Documents

Publication Publication Date Title
WO2006019624A3 (en) Method and system for controlling refresh to avoid memory cell data losses
TW200737189A (en) Apparatus and method for self-refreshing dynamic random access memory cells
TW200615969A (en) Method and system for providing independent bank refresh for volatile memories
US8289797B2 (en) Method, apparatus, and system for active refresh management
US6094705A (en) Method and system for selective DRAM refresh to reduce power consumption
US7551502B2 (en) Semiconductor device
US8347171B2 (en) Semiconductor memory device capable of reducing current in PASR mode
US7269085B2 (en) Non volatile semiconductor memory device having a multi-bit cell array
TW200615954A (en) Method of refreshing a memory device utilizing pasr and piled refresh schemes
JP2006518531A5 (en)
TW200632939A (en) Directed auto-refresh synchronization
WO1992011638A3 (en) Hidden refresh of a dynamic random access memory
TW200703336A (en) DRAM and method for partially refreshing memory cell array
EP2267722A8 (en) Method and system for hiding refreshes in a dynamic random access memory
US8059445B2 (en) Ferroelectric memory
TW201619832A (en) Memory device and memory system including the memory device
TWI668692B (en) Dynamic random access memory
US6400631B1 (en) Circuit, system and method for executing a refresh in an active memory bank
KR100809960B1 (en) Circuit for refresh of semiconductor memory device and refresh method by the same
US6862238B1 (en) Memory system with reduced refresh current
US8514647B2 (en) Refresh circuit
US7797511B2 (en) Memory refresh system and method
WO2001067456A3 (en) Multiple entry matching in a content addressable memory
CN205656855U (en) Dynamic memory based on open bit line structure
TW200627467A (en) Memory architecture of display device and memory writing method for the same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase