WO2006022498A1 - Nitride semicondctor light emitting device and fabrication method thereof - Google Patents
Nitride semicondctor light emitting device and fabrication method thereof Download PDFInfo
- Publication number
- WO2006022498A1 WO2006022498A1 PCT/KR2005/002757 KR2005002757W WO2006022498A1 WO 2006022498 A1 WO2006022498 A1 WO 2006022498A1 KR 2005002757 W KR2005002757 W KR 2005002757W WO 2006022498 A1 WO2006022498 A1 WO 2006022498A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- nitride semiconductor
- emitting device
- semiconductor light
- alinn
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 222
- 238000000034 method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 198
- 238000005253 cladding Methods 0.000 claims abstract description 57
- FPIPGXGPPPQFEQ-OVSJKPMPSA-N all-trans-retinol Chemical compound OC\C=C(/C)\C=C\C=C(/C)\C=C\C1=C(C)CCCC1(C)C FPIPGXGPPPQFEQ-OVSJKPMPSA-N 0.000 claims abstract description 6
- 239000011717 all-trans-retinol Substances 0.000 claims abstract description 3
- 235000019169 all-trans-retinol Nutrition 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims description 59
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 229910004205 SiNX Inorganic materials 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000011777 magnesium Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 229910019897 RuOx Inorganic materials 0.000 claims description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- 230000003287 optical effect Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 10
- 229910008313 Si—In Inorganic materials 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 5
- 238000001994 activation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910019080 Mg-H Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/661,186 US8053794B2 (en) | 2004-08-26 | 2005-08-19 | Nitride semiconductor light emitting device and fabrication method thereof |
EP20050781229 EP1794813B1 (en) | 2004-08-26 | 2005-08-19 | Nitride semiconductor light emitting device and fabrication method thereof |
JP2007529680A JP2008511154A (en) | 2004-08-26 | 2005-08-19 | Nitride semiconductor light emitting device and manufacturing method thereof |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0067497 | 2004-08-26 | ||
KR10-2004-0067495 | 2004-08-26 | ||
KR20040067495A KR100611003B1 (en) | 2004-08-26 | 2004-08-26 | Nitride semiconductor LED and fabrication method thereof |
KR20040067497A KR100609583B1 (en) | 2004-08-26 | 2004-08-26 | Nitride semiconductor LED and fabrication method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006022498A1 true WO2006022498A1 (en) | 2006-03-02 |
Family
ID=35967676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2005/002757 WO2006022498A1 (en) | 2004-08-26 | 2005-08-19 | Nitride semicondctor light emitting device and fabrication method thereof |
Country Status (4)
Country | Link |
---|---|
US (1) | US8053794B2 (en) |
EP (1) | EP1794813B1 (en) |
JP (2) | JP2008511154A (en) |
WO (1) | WO2006022498A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101393953B1 (en) | 2007-06-25 | 2014-05-13 | 엘지이노텍 주식회사 | Light emitting device and method for manufacturing the same |
US9136427B2 (en) | 2010-01-05 | 2015-09-15 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI475717B (en) * | 2008-05-09 | 2015-03-01 | Advanced Optoelectronic Tech | A semiconductor element that emits radiation |
KR20110062128A (en) * | 2009-12-02 | 2011-06-10 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package and method for fabricating the same |
KR101712549B1 (en) * | 2010-01-05 | 2017-03-22 | 서울바이오시스 주식회사 | Light emitting diode having spacer layer |
KR101754900B1 (en) * | 2010-04-09 | 2017-07-06 | 엘지이노텍 주식회사 | Light Emitting Device |
KR101646664B1 (en) * | 2010-05-18 | 2016-08-08 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
WO2017136832A1 (en) * | 2016-02-05 | 2017-08-10 | The Regents Of The University Of California | Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers |
CN109300851A (en) * | 2018-09-03 | 2019-02-01 | 淮安澳洋顺昌光电技术有限公司 | A kind of low temperature p-type GaN epitaxy piece with Al and In doped growing |
CN114220891B (en) * | 2021-12-21 | 2024-02-23 | 江苏第三代半导体研究院有限公司 | Epitaxial wafer of semiconductor device and manufacturing method and application thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1051070A (en) * | 1996-07-29 | 1998-02-20 | Fujitsu Ltd | Semiconductor laser |
JPH1051074A (en) * | 1996-08-02 | 1998-02-20 | Fujitsu Ltd | Semiconductor light emitting device |
US6051847A (en) * | 1997-05-21 | 2000-04-18 | Matsushita Electric Industrial Co., Ltd. | Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film |
JP2000286451A (en) * | 1998-11-17 | 2000-10-13 | Nichia Chem Ind Ltd | Nitride semiconductor device |
JP2002033513A (en) * | 2000-07-13 | 2002-01-31 | Shiro Sakai | Light emitting element |
US6410939B1 (en) * | 2000-10-12 | 2002-06-25 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device and method of manufacturing the same |
WO2004051707A2 (en) * | 2002-12-04 | 2004-06-17 | Emcore Corporation | Gallium nitride-based devices and manufacturing process |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2295270A (en) * | 1994-11-14 | 1996-05-22 | Sharp Kk | Surface-emitting laser with profiled active region |
US5585648A (en) * | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
US5661074A (en) * | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JPH08279649A (en) * | 1995-04-05 | 1996-10-22 | Mitsubishi Electric Corp | Semiconductor laser and manufacture thereof |
JP2003133246A (en) * | 1996-01-19 | 2003-05-09 | Matsushita Electric Ind Co Ltd | Gallium nitride compound semiconductor light emitting element and its manufacturing method |
JP3336855B2 (en) * | 1996-03-27 | 2002-10-21 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
US5684309A (en) * | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
JP3776538B2 (en) * | 1996-12-24 | 2006-05-17 | ローム株式会社 | Semiconductor light emitting device and manufacturing method thereof |
JP3374737B2 (en) * | 1997-01-09 | 2003-02-10 | 日亜化学工業株式会社 | Nitride semiconductor device |
US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
US6778582B1 (en) * | 2000-03-06 | 2004-08-17 | Novalux, Inc. | Coupled cavity high power semiconductor laser |
AU2001241108A1 (en) * | 2000-03-14 | 2001-09-24 | Toyoda Gosei Co. Ltd. | Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element |
JP4581198B2 (en) * | 2000-08-10 | 2010-11-17 | ソニー株式会社 | Heat treatment method for nitride compound semiconductor layer and method for manufacturing semiconductor device |
US6534797B1 (en) * | 2000-11-03 | 2003-03-18 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
JP2002198560A (en) * | 2000-12-26 | 2002-07-12 | Sharp Corp | Semiconductor light emitting element and its manufacturing method |
JP2002319703A (en) * | 2001-04-20 | 2002-10-31 | Ricoh Co Ltd | Semiconductor device and its manufacturing method |
TW493287B (en) * | 2001-05-30 | 2002-07-01 | Epistar Corp | Light emitting diode structure with non-conductive substrate |
TWI262606B (en) | 2001-08-30 | 2006-09-21 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor-element and its production method |
KR100583163B1 (en) * | 2002-08-19 | 2006-05-23 | 엘지이노텍 주식회사 | Nitride semiconductor and fabrication method for thereof |
CN100375301C (en) * | 2002-11-06 | 2008-03-12 | 三垦电气株式会社 | Semiconductor light-emitting device and method for manufacturing same |
JP4324387B2 (en) * | 2003-01-31 | 2009-09-02 | シャープ株式会社 | Oxide semiconductor light emitting device |
US6987281B2 (en) * | 2003-02-13 | 2006-01-17 | Cree, Inc. | Group III nitride contact structures for light emitting devices |
CN1275337C (en) | 2003-09-17 | 2006-09-13 | 北京工大智源科技发展有限公司 | High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes |
JP2004214698A (en) * | 2004-03-29 | 2004-07-29 | Nichia Chem Ind Ltd | Nitride semiconductor light emitting element |
-
2005
- 2005-08-19 JP JP2007529680A patent/JP2008511154A/en active Pending
- 2005-08-19 EP EP20050781229 patent/EP1794813B1/en not_active Expired - Fee Related
- 2005-08-19 WO PCT/KR2005/002757 patent/WO2006022498A1/en active Application Filing
- 2005-08-19 US US11/661,186 patent/US8053794B2/en not_active Expired - Fee Related
-
2012
- 2012-11-19 JP JP2012252910A patent/JP2013058786A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1051070A (en) * | 1996-07-29 | 1998-02-20 | Fujitsu Ltd | Semiconductor laser |
JPH1051074A (en) * | 1996-08-02 | 1998-02-20 | Fujitsu Ltd | Semiconductor light emitting device |
US6051847A (en) * | 1997-05-21 | 2000-04-18 | Matsushita Electric Industrial Co., Ltd. | Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film |
JP2000286451A (en) * | 1998-11-17 | 2000-10-13 | Nichia Chem Ind Ltd | Nitride semiconductor device |
JP2002033513A (en) * | 2000-07-13 | 2002-01-31 | Shiro Sakai | Light emitting element |
US6410939B1 (en) * | 2000-10-12 | 2002-06-25 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device and method of manufacturing the same |
WO2004051707A2 (en) * | 2002-12-04 | 2004-06-17 | Emcore Corporation | Gallium nitride-based devices and manufacturing process |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101393953B1 (en) | 2007-06-25 | 2014-05-13 | 엘지이노텍 주식회사 | Light emitting device and method for manufacturing the same |
US9136427B2 (en) | 2010-01-05 | 2015-09-15 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
US10418514B2 (en) | 2010-01-05 | 2019-09-17 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
EP1794813A1 (en) | 2007-06-13 |
EP1794813B1 (en) | 2015-05-20 |
US20070252135A1 (en) | 2007-11-01 |
JP2008511154A (en) | 2008-04-10 |
US8053794B2 (en) | 2011-11-08 |
JP2013058786A (en) | 2013-03-28 |
EP1794813A4 (en) | 2010-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1790017B1 (en) | Nitride semiconductor light emitting device and fabrication method thereof | |
EP1794813B1 (en) | Nitride semiconductor light emitting device and fabrication method thereof | |
US7429756B2 (en) | Nitride semiconductor light emitting device | |
US8723197B2 (en) | Nitride semiconductor light emitting device and method of manufacturing the same | |
EP1869715B1 (en) | Nitride semiconductor led and fabrication method thereof | |
CN100576585C (en) | Nitride semiconductor photogenerator and manufacture method thereof | |
KR100670534B1 (en) | Nitride semiconductor LED and fabrication method thereof | |
KR100611003B1 (en) | Nitride semiconductor LED and fabrication method thereof | |
KR100593151B1 (en) | Nitride semiconductor LED and fabrication method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2007529680 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11661186 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005781229 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 381/MUMNP/2007 Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200580032507.4 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2005781229 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 11661186 Country of ref document: US |