WO2006024025A3 - Optical-mode-confined and electrical-current-confined semiconductor light sources utilizing resistive interfacial layers - Google Patents

Optical-mode-confined and electrical-current-confined semiconductor light sources utilizing resistive interfacial layers Download PDF

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Publication number
WO2006024025A3
WO2006024025A3 PCT/US2005/030570 US2005030570W WO2006024025A3 WO 2006024025 A3 WO2006024025 A3 WO 2006024025A3 US 2005030570 W US2005030570 W US 2005030570W WO 2006024025 A3 WO2006024025 A3 WO 2006024025A3
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WO
WIPO (PCT)
Prior art keywords
confined
semiconductor
region
current
optical
Prior art date
Application number
PCT/US2005/030570
Other languages
French (fr)
Other versions
WO2006024025A2 (en
Inventor
Dennis G Deppe
Original Assignee
Nanosource Inc
Dennis G Deppe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosource Inc, Dennis G Deppe filed Critical Nanosource Inc
Publication of WO2006024025A2 publication Critical patent/WO2006024025A2/en
Publication of WO2006024025A3 publication Critical patent/WO2006024025A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity

Abstract

A semiconductor device comprises: a first region (180) having a semiconductor interface between a first semiconductor (130) and a second semiconductor (150), and a second region (170), laterally adjoining the first region (180). The first semiconductor (130) is characterized by Fermi level pinning within an energy gap of the first semiconductor material (130) and further characterized by a first conductivity level in the vicinity of the interface that substantially blocks electrical current flow through the semiconductor interface. The second region (170) includes a semiconductor characterized by a second conductivity level substantially higher than the first conductivity level such that the second region (170) is adapted to enable electrical current to pass through the second region (170), thus defining a current injection path in the device.
PCT/US2005/030570 2004-08-25 2005-08-24 Optical-mode-confined and electrical-current-confined semiconductor light sources utilizing resistive interfacial layers WO2006024025A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60479004P 2004-08-25 2004-08-25
US60/604,790 2004-08-25

Publications (2)

Publication Number Publication Date
WO2006024025A2 WO2006024025A2 (en) 2006-03-02
WO2006024025A3 true WO2006024025A3 (en) 2007-04-19

Family

ID=35968335

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/030570 WO2006024025A2 (en) 2004-08-25 2005-08-24 Optical-mode-confined and electrical-current-confined semiconductor light sources utilizing resistive interfacial layers

Country Status (1)

Country Link
WO (1) WO2006024025A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102209647B1 (en) * 2016-09-28 2021-01-29 피니사 코포레이숀 Implant regrowth VCSELs and VCSEL arrays with heterogeneous couplings of different VCSEL types
TR201620378A2 (en) * 2016-12-30 2017-05-22 Abdullah Demir Method of obtaining surface emission semiconductor light source with embedded electrical and optical restriction layer.

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124826A (en) * 1977-03-01 1978-11-07 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor lasers
US6169756B1 (en) * 1997-12-23 2001-01-02 Lucent Technologies Inc. Vertical cavity surface-emitting laser with optical guide and current aperture
US6683898B2 (en) * 2001-03-09 2004-01-27 Alight Technologies A/S Mode control using transversal bandgap structure in VCSELs

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124826A (en) * 1977-03-01 1978-11-07 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor lasers
US6169756B1 (en) * 1997-12-23 2001-01-02 Lucent Technologies Inc. Vertical cavity surface-emitting laser with optical guide and current aperture
US6683898B2 (en) * 2001-03-09 2004-01-27 Alight Technologies A/S Mode control using transversal bandgap structure in VCSELs

Also Published As

Publication number Publication date
WO2006024025A2 (en) 2006-03-02

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