WO2006039560A2

WO2006039560A2 - Silicon inertial sensors formed using mems

Info

Publication number: WO2006039560A2
Application number: PCT/US2005/035313
Authority: WO
Inventors: Eun Sok Kim; Qiang Zou
Original assignee: University Of Southern California
Priority date: 2004-09-30
Filing date: 2005-09-30
Publication date: 2006-04-13
Also published as: US7481112B2; WO2006039560A3; US20070193353A1; WO2006039561A2; US20060225506A1; WO2006039561A3; US7360422B2

Abstract

A MEMS silicon inertial sensor formed of a mass that is supported and constrained to vibrate in only specified ways. The sensors can be separately optimized from the support, to adjust the sensitivity separate from the bandwidth. The sensor can sense three dimensionally, or can only sense in a single plane.

Description

Silicon Inertial Sensors Formed Using MEMS

[0001] This application claims priority from provisional application serial numbers 60/614,858 and 60/614,909, both filed September 30, 2004, the contents of which aire herewith incorporated by reference.

Background

[0002] Inertial sensors are commonly used in rnemy different applications including vehicle rollover sensors, aircraft sensors, and others. The sensors should be capable being used in many different environments, and be relatively ruggedized. In addition, it is important that the sensors produce output signals which are accurate. Various kinds of environmental noise, of various forms, may effect the accuracy of such sensors.

Summary

[0003] The present application describes the formation of an inertial sensor on a silicon substrate, and in an embodiment is formed using Micro Electro Mechanica.1 Systems or MEMS. An aspect disclosed herein describes mitigating the vibration susceptibility of the sensor. Another aspect describes three-dimensional sensors, and ways of isolating the different orthogonal axes of information. Briel description of the drawings

[0004] figure Ia and Ib show respective views of an angular rate sensor of an embodiment;

[0005] figure 2 shows the calculated sensitivity of the sensor as a function of resonant frequency;

[0006] figure 3a shows a piezo resistive element on the sensing element;

[0007] figures 4a and 4b show an anti-phase vibration mitigation embodiment;

[0008] figure 5 shows an embodiment using a Wheatstone bridge system;

[0009] figure 6 shows a three axis accelerometer;

[0010] figures 7A-7E show brief processing steps to form the sensor;

[0011] figure 8 illustrates the y-axis acceleration sensing of the accelerometer;

[0012] figures 9a-9C illustrate the x and z axis acceleration sensing of the accelerometer;

[0013] figures 10 a-10d illustrate how the Wheatstone bridges can sense the acceleration parameters; and

[0014] figures 11a and lib illustrate shock survival techniques for the sensor. Detailed description

[0015] The general structure and techniques, and more specific embodiments which can be used to effect different ways of carrying out the more general goals are described herein.

[0016] An embodiment is shown in figures 1 and 2. The embodiment uses piezo-based driving and sensing, which can be for example piezoelectric driving and piezoelectric or piezoresistive sensing. The rate sensor is formed of silicon, although alternative embodiments may use other semiconductor processable materials. The embodiment forms the sensors using a MEMS technique.

[0017] An anchor part 100 supports the entire silicon beam- mass structure, and acts as the support for the system. The driving element 110 may include a ZnO piezoelectric film deposited on a Si₃N₄ beam. In operation, actuating the driving element 110 causes the structure to vibrate in the vertical plane.

[0018] A decoupling island 120 may decouple the driving part 110 from the sensing parts, which includes a vertical beam 130, sensing elements 150, 155, and proof mass 140. The beam 130 connects to a connection surface of the proof mass which is along a surface of the proof mass that faces to the decoupling island. Other surfaces of the mass, which are closest to the edges of the mass, abut against the sensing elements . [0019] Vertical supporting beam 130 is connected to the decoupling island 120 to support the proof mass 140, while allowing the proof mass to move in specified ways. The supporting beams such as 130 effectively forms springs. The supporting beams are columnar in shape, with a rectangular, non-square cross section that defines a thicker thickness, which is in the z direction in figure Ia, and a thinner thickness in the y direction in figure Ia. This allows the mass 140 to move in the y direction, thereby flexing the supporting beam 130. However, movement in the z direction and the x direction is constrained by the vertical beam 130.

[0020] The strain on the sensing elements 150, 155, which are located around the vertical beam 130, indicates the amount of movement of the proof mass. The sensing elements may produce respective output signals which are detected by and analyzed by electronic circuitry shown as 160.

[0021] A first embodiment uses piezoresistive sensing to detect the movement. Figure 3A shows implanted piezoresistive sensors 320, 322 respectively implanted on the beams 150 and 155. The vibration causes alternate tension and stretching on the sensors. The mode and manner of vibration depends on the resonance of the system. This resonance can be selected to be within a specified range. According to an embodiment, the resonance is selected to be within a range that keeps it within a specified stability control specification, for example, a rollover specification. [0022] Figure 2 illustrates the different sensitivity between the driving mode resonant frequency and the sensing mode resonant frequency. The driving mode resonant frequency of the rate sensor is 477.5 Hz. Figure 2 shows how the sensing mode resonant frequency can be selected in the range between 447.6 and 506.7. In an embodiment, a stability control line 200 is selected, and the resonant frequency is maintained between the two edges of that control line. In the exemplary embodiment, the difference between the sensing mode and the driving mode resonant frequency is less than 6.1%, but it should be understood that many different values for this difference are possible.

[0023] In order to maintain the standards for a rollover application, the system is much more lenient. The area of rollover specification is shown as 205. In the embodiment, the sensing mode resonant frequency is between 352 and 595 hertz, in order to maintain it within the rollover sensitivity. This only requires a difference between sensing mode and driving mode as being less than 25% or less.

[0024] Table 1 illustrates a set of structural design parameters that satisfy the specifications for both stability control and rollover applications Tablei Structure Design Parameters (for Piezoresistive Sensing)

Structure parameters Design values

Driving beam length (μm) 53.04

Driving beam width (μm) 3000

ZnO thickness(μm) 0.3

LPCVD SiN thickness(μm) 0.1

Decoupling island length(μm) 100

Decoupling island width(μm) 3000

Decoupling island thickness(μm) 530

Tiny beam length(μm) 50

Tiny beam width(μm) 3

Tiny beam thickness(μm) 2

Vertical beam length (μm) 2000

Vertical beam width (μm) 35

Vertical beam thickness (μm) 530

Leg proof mass length(μm) 1900

Leg proof mass width(μm) 400

Leg proof mass thickness(μm) 530

Main proof mass length(μm) 3000

MEain proof mass width(μm) 3000

Main proof mass thickness(μm) 530

Driving mode resonant frequency(Hz) 477.5

Sensing mode resonant frequency(Hz) 502.5

Sensitivity(V/deg/sec) 0.00635*V_SUPDi_v

[0025] The total size of the sensor chip is 6000 urn x 3000 urn by 530 urn. The driving mode resonant frequency is 477.5 Hz. The sensing mode resonant frequency is 502.5. Sensiti^~vity of the angular rate sensor can be up to 0.00635 * (V. supply) /degrees/sec.

[0026] Table 2 illustrates the structural design parameters which allow the piezoelectric sensing to satisfy the specifications for stability control and rollover applications. Again, the total size of the sensor chip is 6000 μm. by 3000 μm by 530 μm. The driving mode resonant frequency is 477.5 Hz and the sensing mode resonant frequency is 498 Hz. The sensitivity of the angular rate sensor can be as high as 0.006O8 * (V. supply /degrees /seconds) .

Table 2 Structure Design Parameters (for Piezoelectric Sensing)

Structure parameters Design values

Driving beam length (μm) 53.04

Driving beam width (μm) 3000

ZnO thickness(μm) 0.3

LPCVD SiN thickness(μm) 0.1

Decoupling island length(μm) 100

Decoupling island width(μm) 3000

Decoupling island thickness(μm) 530

Tiny beam length(μm) 50

Tiny beam width(μm) 10

Tiny beam thickness(μm) 2

Vertical beam length (μm) 2000

Vertical beam width (μm) 34.8

Vertical beam thickness (μm) 530

Leg proof mass length(μm) 1900

Leg proof mass width(μm) 400

Leg proof mass thickness(μm) 530

Main proof mass length(μm) 3000

Main proof mass width(μm) 3000

Main proof mass thickness(μm) 530

Driving mode resonant frequency(Hz) 477.5

Sensing mode resonant frequency(Hz) 498

S ensitivity( V/deg/sec) 0.00608*V_supplv

[0027] This system can satisfy the specifications for automotive stability and rollover controls. Moreover, the fundamental resonant frequency of the sensor can be around 500 Hz in order to satisfy the specification that the frequency response should tie between 10 and 50 Hz.

[0028] The sensing signal is from two different elements 150 and 155. Effectively that sensing signal is a differential mode signal where one beam receives tensile stress and the other beam receives compressive stress. Because of this, the system is not sensitive to vertical vibration and acceleration. These vibrations produce a common mode signal on the two sensing beans which cancel each other out.

[0029] Another aspect describes embodiments to mitigate the vibration susceptibility of this sensor.

[0030] A first embodiment takes advantage of the resonance and drives the resonant frequency of the driving mode of the sensor within a specified, range that is outside the range of expected vibration and lαence provides some vibration independence. For example, the driving mode resonant frequency may be set to around 3000 Hz, taking it about 1000 Hz away from the vibration environment frequency range of 20 - 2000 Hz.

[0031] This embodiment may use a PZT film instead of zinc oxide as the piezoelectric driver, to provide a higher d₃χ. More specifically, by selecting the sensing mode resonant frequency to be within the range of 2300 to 4000 Hz, this also maintains the frequency outside the specification for automobile stability control.

[0032] In this embod-Lment, the difference between the sensing mode and the driving mode resonant frequency is less than 23%. If only the vertical beam is changed, while the other structural parameters are kept the same, this can use a vertical beam having a size between 96.6 and 140.4 μm. [0033] Table 3 satisfies the specification for both stability control and rollover applications. The total size

of the sensor chip is around 6000 μim x 3000 μm x 530 μm. The targeted driving mode and sensing mode resonant frequencies are around 3000 and 3500 Hz, respectively. The sensitivity of the angular rate sensor can be up to 0.0102 * Vsupply/degrees/seconds.

Table 3 Structure design parameters (piezoelectric driving and piezoresistive sensing).

[0034 ] A second embodiment of vibration independence is explained with reference to f igure s 4A and 4B . [0035] In-phase oscillations may cause vibrations along the z-axis to be transmitted via the anchor block and from there, into the sensor's supporting structure. This type and magnitude of vibration could be transmitted ±nto the electronics PCB where it can cause electronic component failures and other undesirable effects. Transmitted vibrations are, therefore undesirable. An embodiment changes the driven oscillation mode to one where eacti mass is induced to vibrate with a 180 degrees phase shift with respect to each other. That is, both masses will vibrate at the same frequency. However, when one mass is at its maximum deflected position in the +Z direction, the other mass is at its maximum deflected position in the -Z direction.

[0036] Figures 4A and 4B show a twin mass angular rate sensor which provides anti phase drive vibration mechanisms. Proof masses 405, 415 are provided on both sides of the anchor 400. A first mass 405 is connected to a first sensor 410 and a second mass 415 is connected to a second sensor 420. The masses 405 and 415 are driven to drive in anti phase modes. Environmental vibration along the Z axis can produce extra movement, other than the vibration amplitude . The vibration amplitude along the proof masses can be described according to equations 1 and 2 :

A_dl=A_d+B ₍₁₎

A₄₂=-A_d+B (1) From equation 1, it follows that:

^ = ^₁ - ^₂ = 2 - 5 - 4, - G (3)

[0037] Equation 3 shows that the vibration amplitude produced by the environmental vibration is canceled out, thereby providing vibration independence.

[0038] Another embodiment shown in Figure 5 uses a phase difference detector. The previous embodiments assume "the output of the angular rate sensor to be related to the vibration amplitude of the driving mode in the sensing mode and also to be susceptible to environmental vibration. In this embodiment, a new angular rate detecting technique is based on detection of the phase difference.

[0039] In this embodiment, the driving element 500 -uses silicon thin beams 520, 522, in place of the silicon nitride parts used in other embodiments. As in these other embodiments, this embodiment uses resistive sensors 510, 512 on the sensing element beams 514, 516 respectively. Tlhe additional pair of piezoresistors 520, 522 are used as R3 and R4, on the silicon flat beam.

[0040] The resistors R1/R3 forms a first half Wheatstone bridge, and the resistors R2/R4 form the other half Wheatstone bridge. Each produces an output voltage. In the embodiment, each of the four resistors has a resistance value of R when unstrained. The difference between the base value R, and the strained value, produces the output voltages as follows.

The driving amplitude:

X = A_dsin(ωt) (4)

The sensing amplitude:

Y = A_s cos(fi)t) (⁵

AR₃ M₄ Tr_{44 2} .

R R 2 ^{λ d}

^ = ^-S₂-A_s-ω²-cos(ωt) (O

— - = — — -S₀-A -ω • cos(ωt) R 2 ^{2 s}

The outputs from the two half Wheatstone bridges:

The phases of V_outi and V_out2 when V_outi and V_out2 are equal to 0:

The phase difference:

[0041] The phase difference is proportional to the angular

rate Ω and is not related to the vibration amplitude. S₁, S₂ and G are determined by the structural parameters, driving frequency, resonant frequency of sensing mode, and quality factor. Thus, the phase-difference detecting scheme can reduce the sensitivity to environmental vibrations. [0042] Another embodiment describes a three axis accelerometer. The three axis accelerator uses two masses to sense acceleration along three orthogonal axes. The embodiment includes two symmetric parts, each of which includes a proof mass, shown as proof mass 1 (600) and a proof mass 2 (610) . Each part also includes one vertical beam (602 and 612) , one decoupling island (604, 614), and two sensing beams (620,622 and 624,626) . The beams can sense as described in previous embodiments. In this embodiment, piezoelectric films can be deposited on the sensing beams to allow piezoelectric sensing. The sensing beams 620, 622, 624, 626 sense the movement in the "y" direction, as described herein. [0043] Coupling beams 640, 642 connect the decoupling island 604 to anchor 650, which holds the first and second parts together. Analogously, the coupling beams 644, 646 connect the other decoupling island 614 to the anchor 650. The anchor 650 connects to two groups of sensors - a first group sensitive to the x-axis acceleration, and a second group sensitive to the z axis acceleration.

[0044] The supporting beams 640, 642, 644, 646 are separated from the sensing elements 620, 622, 624, 626. This may optimize the sensing elements and the supporting beam separately in order to satisfy bandwidth requirements and maximize the sensitivity. Cross axis sensitivity can also be minimized. Tables 4 and 5 show the parameters of an embodiment.

Table 4 Structure design parameters and calculated output (Y-axis sensing).

[0045] Therefore,^" in summary, the Three-axis Accelerometer with Piezoresistive Sensing can have the following characteristics :

(1) input voltage: 5V current can be less than 5mA

(2) un-amplified sensitivity: X-axis: 148.3 mV/g/5V Y-axis: 1727 mV/g/5V Z-axis: 988.5 mV/g/5V

(3) Minimum detectable signal: X-axis: 0.0012g

Y-axis: O.OOOlg Z-axis : 0.0002g

(4) cross-axis sensitivity: < 2.2%

(5) Bandwidth : DC-7OHz

(6) Shock survival: need to include shock protection structure appropriate to the package.

[0046] The support beams contribute mainly to the resonant frequency of the accelerometer, while the sensing beams affects its sensitivity. This provides the flexibility to optimize the structure parameters of the support beam and sensing beam to maximize the figure of merit (i.e.,

sensitivity*ω²) . [0047] For example, the vertical beam 602, 612 is the support beam for Y-axis acceleration sensing, while the sensing beams, also called "tiny beams" because of their thin construction in certain embodiments, are on both sides of the vertical beam 620, 622, 624, 626.

[0048] The thickness and other structural parameters of the vertical beam 602, 612 may be determined by the resonant frequency and bandwidth requirement for a specific application. The thickness of the vertical beam, and also the length and width of the vertical beam, as well as the two sensing beams to some minor degree, may effect the resonant frequency.

[0049] In the structure-parameter design summarized in

Table 4, the width of the vertical beam is chosen to be 28 μm.

This vertical beam thickness can be achieved with Deep Reactive Ion Etching (DRIE) . The sensitivity is determined by the thickness, length, width and thickness of the tiny sensing beam with trade-off among those parts.

[0050] Table 5 shows selecting the thickness of the tiny beam to be 2 micron, which can be achieved by using silicon

wafers with 2 μm thick N-type epitaxial layer on a P-type substrate. In an alternative embodiment, these may use silicon-on-insulator wafers. Electrochemical etching can be used to etch the P substrate, so that the etching stops

exactly at the P-N junction of the epi wafer, leaving a 2 μm thick N-type diaphragm or beams with very good uniformity and repeatability.

[0051] Figure 8 illustrates a schematic view of the y axis acceleration. The mass 610 is driven in the y direction 650 by the external acceleration to be detected. The acceleration in the direction of the arrow 650 causes deflection of the supporting beam 612, and correspondingly causes the sensor 626 to be compressed, and causes the sensor 624 to be stretched.

[0052] The structure 612 has a rectangular shape to constrain the movement of the mass 112 to the y axis. This forces substantially pure compression on the sensor 626; and substantially pure tension on the other sensor 624.

[0053] Figures 9a-9c show a force distribution of the Figure 6 tri-axis sensor. Figure 9a shows an exaggerated view of the results of the force on the sensor. Z axis acceleration causes both masses to move, and produces symmetric stress distribution. X axis acceleration produces antisymmetric force distribution. Therefore, x-axis acceleration may produce a different distribution of voltages than the z axis acceleration. Figures 9B and 9C illustrate the resistor at the different locations, with resistors labeled as "T" referring to resistors that sense tension, and resistors labeled "C" representing resistors which sense compression. [0054] Figures lOa-lOd illustrate how these resistances, formed into a Wheatstone Bridge configuration, can be connected to sense the different kinds of acceleration. Figure 10a shows how when x axis acceleration is applied, the output voltage Voutl from the resistances R1-R4 is proportional to that acceleration. However, the output voltage from those same resistors R1-R4 is zero when z-axis acceleration is applied, as illustrated in Figure 10b. The Wheatstone bridge formed by resistors R5-R8 produces an output voltage Vout2. Vout2 is proportional to a z-axis acceleration. The x-axis acceleration causes a 0 output for Vout2.

[0055] In order to optimize parameters of the device, a finite element analysis of the device may be carried out for the twzLn mass structure. When IG of acceleration is applied, stresses as high as 390 MPa can be achieved. Sensitivity can be up to 257 mV per G per V, and resonant frequency can be as high as 333 Hz. One G of Y axis acceleration produces minimal stress on the x and z axis. Therefore, there is minimal cross beam sensitivity.

[0056] The stress on the sensing beams can be up to 180 MPa. Device function and structure may be improved by optimizing the structural parameters such that the asymmetric stress distribution on the beam is minimized. [0057] Even higher stresses may cause damage if the stress is high enough to exceed the structural limits of the system Figures HA and HB respectively illustrate in-plane bumpers and out of plane bumpers. For example, 10,000 G's of shock survival can be obtained through proper in plane and out of plane bumper design.

[0058] Figures 7a-7f illustrate the device formation, with each figure illustrating both a side view and cross-sectional view of each step.

[0059] Figure 7a illustrates a first operation. A P type silicon substrate 700 with an epitaxial layer 701 is deposited with a layer of silicon nitride. Low dose boron is implanted in at least one hole 702 in silicon nitride layer 705 to form piezo resistors . The epitaxial layer can be 2-3 μm thick, and can be an n type epitaxial layer on a p type substrate. An electrochemical self etching stop can be used to form the tiny sensing beans in this way.

[0060] After- the initial low dose boron ion implantation, a higher dose boron ion implantation is used to form the ohmic contacts 710 as shown in figure 7B.

[0061] The low dose boron parts are used as etch stops in Figure 7C, to form a thin silicon diaphragm and the tiny sensing beam. [0062] Figure 7E shows depositing aluminum to form an electrode connection pattern. Finally, deep ion reactive ion etching is used to form the vertical beams and to release the device.

[0063] The sensors described herein may produce their outputs to be displayed on any kind of display, e.g., an analog dial or a digital display. The outputs may also be processed by one or computers which may be any kind of computer, either general purpose, or some specific purpose computer such as a workstation. The computer may be a Pentium class computer, running Windows XP or Linux, or may be a Mclntosh computer. The programs may be written in C, or Java, or any other programming language. The programs may be resident on a storage medium, e.g., magnetic or optical, e.g. the computer hard drive, a removable disk or other removable medium. The programs and the data may also be run over a network.

[0064] Although only a few embodiments have been disclosed in detail above, other embodiments are possible and are intended to be encompassed within this specification. The specification describes specific examples to accomplish a more general goal that may be accomplished in other way. This disclosure is intended to be exemplary, and the claims are intended to cover any modification or alternative which might be predictable to a person having ordinary skill in the art. [0065] For example, the above has described certain parameters with reference to zx, y, z orthogonal axes. It should be understood that the parameters can be sensed in different ways. In addition, the above has described different kinds of driving and. sensing mechanisms, for example it has described piezo based driving mechanisms, and piezo resistive (as well as piezoelectric) based sensing mechanisms. It should be understood that other driving mechanisms, including magnetic, and other- driving mechanisms can be used. Moreover, the sensor can be any kind of sensor.

[0066] The above has also described an embodiment formed using MEMS, but it should be understood that other formation techniques can be used.

[0067] Also, only those claims which use the words "means for" are intended to be inteirpreted under 35 USC 112, sixth paragraph. Moreover, no litni.tations from the specification are intended to be read into any claims, unless those limitations are expressly included in the claims.

Claims

What is claimed is :

1. A sensor, comprising: a mass, defining an outer perimeter; a support for the mass, whiich constrains the mass to vibrate in a specified plane, connected to a connection surface of said mass; and first and second sensing elements, adjacent to first and second parts of the mass to detect vibration of the mass.

2. A sensor as in claim 1, wherein said support constrains the mass to vibrate in only a single plane, and said first and second sensing elements detect vibration in said single plane.

3. A sensor as in claim 1, wherein further comprising a piezoelectric driving element, producing a driving vibration for said mass .

4. A sensor as in claim 3, further comprising an anchor, operating to support the senso.tr, and coupled to said driving element.

5. A sensor as in claim 4, further comprising a decoupling element, between said anchor and said mass.

6. A sensor as in claim 1, further comprising a supporting anchor, and additional sensors near said supporting anchor.

7. A sensor as in claim 1, further comprising electronic circuitry which senses signals indicative of movement of the mass.

8. A sensor as in claim 1, wherein said first and second sensing elements have resistance values that vary based on tension and/or compression thereof.

9. A sensor as in claim 8, wherein said first and second sensing elements are connected to form part of a sensing Wheatstone bridge.

10. A sensor as in claim 1, wherein said first and second sensing elements include piezoelectric films, of which the electrical polarizations vary based on tension and/or compression thereof.

11. A sensor as in claim 8, wherein said first and second sensing elements are connected to maximize the sensitivity.

12. A sensor as in claim 1, furtlier comprising at least one bumper, located in a location to constrain a movement of said mass.

13. A three axis sensor, comprising:

A first sensor part, comprising: a first mass, defining an outer perimeter; a first support for the first mass, which constrains the first mass to vibrate in a specified plane, connected to a connection surface of said first mass; a first sensing element that detects vibration of said first mass substantially only in said specified plane, said vibration being detected relative to said fiarst support; and a second sensing element that detects vibration substantially only outside said specified plane.

14. A sensor as in claim 13, further comprising an anchor part, and wherein said second sensing element is coupled between said first support and said anchor element, and detects vibration relative to said anchor element.

15. A sensor as in claim 14, further comprising a second mass, defining an outer perimeter; a second support for the second mass, wliich constrains the mass to vibrate in a specified plane, connected to a connection surface of said second mass; and a second sensing element that detects vibration of said first mass substantially only in said specified plane, said vibration being detected relative to said second support.

16. A sensor as in ciaim ±3, wherein said first sensing element includes first and second sensing parts, adjacent to first and second parts of the first mass to detect vibration of the first mass.

17. A method, comprising: forming an a sensor with a supporting beam and a sensing part; first optimizing the supporting beam to set a bandwidth requirement; and separately from said first optimizing, second optimizing the sensing element to set a sensitivity.

18. A method as in claim 17, wherein said sensor senses only in a single plane.

19. A method as in claim 17, wherein said sensor senses in multiple orthogonal planes, and said first optimizing comprises optimizing a cross axis sensitivity.

20. A method as in claim 17, wherein said supporting part supports the middle portion of a vibrating weight, and. further comprising sensing movement of the vibrating weight using first and second parts, a first part that senses substantially pure compression and a second part that senses substantially pure tension.

21. A method as in claim 17, further comprising sensing acceleration in a plurality of orthogonal dimensions, wherein said sensing comprises differential sensing.

22. A method of sensing acceleration, comprising: sensing both compressive movement of a mass, and tensile movement of the mass, in locations that produce symmetrical but opposite information relative to one another; and using said compressive movement and said tensile movement as inputs to a differential amplification to produce an output representing said movement of said mass. first and second sensing elements, adjacent to first and second parts of the mass to detect vibration of the mass.

23. A method as in claim 22, wherein said sensing senses the mass' vibration in only a single plane.

24. A method as in claim 22, further comprising driving said mass to vibrate.