WO2006053036A3 - Non-circular via holes for bumping pads and related structures - Google Patents

Non-circular via holes for bumping pads and related structures Download PDF

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Publication number
WO2006053036A3
WO2006053036A3 PCT/US2005/040584 US2005040584W WO2006053036A3 WO 2006053036 A3 WO2006053036 A3 WO 2006053036A3 US 2005040584 W US2005040584 W US 2005040584W WO 2006053036 A3 WO2006053036 A3 WO 2006053036A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive pad
conductive
substrate
hole
via holes
Prior art date
Application number
PCT/US2005/040584
Other languages
French (fr)
Other versions
WO2006053036A2 (en
Inventor
William E Batchelor
Glenn A Rinne
Original Assignee
Unitive Int Ltd
William E Batchelor
Glenn A Rinne
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unitive Int Ltd, William E Batchelor, Glenn A Rinne filed Critical Unitive Int Ltd
Publication of WO2006053036A2 publication Critical patent/WO2006053036A2/en
Publication of WO2006053036A3 publication Critical patent/WO2006053036A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

An integrated circuit device may include a substrate, a conductive pad on a surface of the substrate, and a conductive line on the surface of the substrate. Moreover, the conductive line may be connected to the conductive pad, and the conductive line may be narrow relative to the conductive pad. In addition, an insulating layer may be provided on the substrate, on the conductive line, and on edge portions of the conductive pad. The insulating layer may have a hole therein exposing a central portion of the conductive pad, and a first segment of a perimeter of the hole may substantially define an arc of a circle around the central portion of the conductive pad. A second segment of the perimeter of the hole may substantially deviate from the circle around the central portion of the conductive pad, and the second segment of the perimeter of the hole may be adjacent a connection between the conductive line and the conductive pad.
PCT/US2005/040584 2004-11-10 2005-11-08 Non-circular via holes for bumping pads and related structures WO2006053036A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62680204P 2004-11-10 2004-11-10
US60/626,802 2004-11-10

Publications (2)

Publication Number Publication Date
WO2006053036A2 WO2006053036A2 (en) 2006-05-18
WO2006053036A3 true WO2006053036A3 (en) 2006-07-06

Family

ID=35897955

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/040584 WO2006053036A2 (en) 2004-11-10 2005-11-08 Non-circular via holes for bumping pads and related structures

Country Status (2)

Country Link
TW (1) TW200629512A (en)
WO (1) WO2006053036A2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7795134B2 (en) 2005-06-28 2010-09-14 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
US7830018B2 (en) 2007-08-31 2010-11-09 Micron Technology, Inc. Partitioned through-layer via and associated systems and methods
US7863187B2 (en) 2005-09-01 2011-01-04 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7973411B2 (en) 2006-08-28 2011-07-05 Micron Technology, Inc. Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods
US8322031B2 (en) 2004-08-27 2012-12-04 Micron Technology, Inc. Method of manufacturing an interposer
US8536485B2 (en) 2004-05-05 2013-09-17 Micron Technology, Inc. Systems and methods for forming apertures in microfeature workpieces
US9209158B2 (en) 2007-12-28 2015-12-08 Micron Technology, Inc. Pass-through 3D interconnect for microelectronic dies and associated systems and methods
US9214391B2 (en) 2004-12-30 2015-12-15 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US9343368B2 (en) 2008-05-15 2016-05-17 Micron Technology, Inc. Disabling electrical connections using pass-through 3D interconnects and associated systems and methods

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084866B2 (en) 2003-12-10 2011-12-27 Micron Technology, Inc. Microelectronic devices and methods for filling vias in microelectronic devices
US7232754B2 (en) 2004-06-29 2007-06-19 Micron Technology, Inc. Microelectronic devices and methods for forming interconnects in microelectronic devices
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7262134B2 (en) 2005-09-01 2007-08-28 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7749899B2 (en) 2006-06-01 2010-07-06 Micron Technology, Inc. Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces
US7902643B2 (en) 2006-08-31 2011-03-08 Micron Technology, Inc. Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods
US7884015B2 (en) 2007-12-06 2011-02-08 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0194696A (en) * 1987-10-06 1989-04-13 Ibiden Co Ltd Printed wiring board
US5252781A (en) * 1991-05-31 1993-10-12 International Business Machines Corporation Substrate member having electric lines and apertured insulating film
US6232668B1 (en) * 1999-02-02 2001-05-15 Rohm Co. Ltd. Semiconductor device of chip-on-chip structure and semiconductor chip for use therein
US6617655B1 (en) * 2002-04-05 2003-09-09 Fairchild Semiconductor Corporation MOSFET device with multiple gate contacts offset from gate contact area and over source area
US20030218246A1 (en) * 2002-05-22 2003-11-27 Hirofumi Abe Semiconductor device passing large electric current
US20040023450A1 (en) * 2001-02-08 2004-02-05 Mitsuaki Katagiri Semiconductor integrated circuit device and its manufacturing method
US20040053483A1 (en) * 2002-06-25 2004-03-18 Nair Krishna K. Methods of forming electronic structures including conductive shunt layers and related structures
US20050012222A1 (en) * 2003-07-15 2005-01-20 Min-Lung Huang [chip structure]

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0194696A (en) * 1987-10-06 1989-04-13 Ibiden Co Ltd Printed wiring board
US5252781A (en) * 1991-05-31 1993-10-12 International Business Machines Corporation Substrate member having electric lines and apertured insulating film
US6232668B1 (en) * 1999-02-02 2001-05-15 Rohm Co. Ltd. Semiconductor device of chip-on-chip structure and semiconductor chip for use therein
US20040023450A1 (en) * 2001-02-08 2004-02-05 Mitsuaki Katagiri Semiconductor integrated circuit device and its manufacturing method
US6617655B1 (en) * 2002-04-05 2003-09-09 Fairchild Semiconductor Corporation MOSFET device with multiple gate contacts offset from gate contact area and over source area
US20030218246A1 (en) * 2002-05-22 2003-11-27 Hirofumi Abe Semiconductor device passing large electric current
US20040053483A1 (en) * 2002-06-25 2004-03-18 Nair Krishna K. Methods of forming electronic structures including conductive shunt layers and related structures
US20050012222A1 (en) * 2003-07-15 2005-01-20 Min-Lung Huang [chip structure]

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 330 (E - 793) 25 July 1989 (1989-07-25) *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8536485B2 (en) 2004-05-05 2013-09-17 Micron Technology, Inc. Systems and methods for forming apertures in microfeature workpieces
US8664562B2 (en) 2004-05-05 2014-03-04 Micron Technology, Inc. Systems and methods for forming apertures in microfeature workpieces
US8322031B2 (en) 2004-08-27 2012-12-04 Micron Technology, Inc. Method of manufacturing an interposer
US9214391B2 (en) 2004-12-30 2015-12-15 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US7795134B2 (en) 2005-06-28 2010-09-14 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
US7863187B2 (en) 2005-09-01 2011-01-04 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7973411B2 (en) 2006-08-28 2011-07-05 Micron Technology, Inc. Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods
US7830018B2 (en) 2007-08-31 2010-11-09 Micron Technology, Inc. Partitioned through-layer via and associated systems and methods
US9209158B2 (en) 2007-12-28 2015-12-08 Micron Technology, Inc. Pass-through 3D interconnect for microelectronic dies and associated systems and methods
US9343368B2 (en) 2008-05-15 2016-05-17 Micron Technology, Inc. Disabling electrical connections using pass-through 3D interconnects and associated systems and methods

Also Published As

Publication number Publication date
WO2006053036A2 (en) 2006-05-18
TW200629512A (en) 2006-08-16

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