WO2006053242A3 - Copper electrodeposition in microelectronics - Google Patents

Copper electrodeposition in microelectronics Download PDF

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Publication number
WO2006053242A3
WO2006053242A3 PCT/US2005/040996 US2005040996W WO2006053242A3 WO 2006053242 A3 WO2006053242 A3 WO 2006053242A3 US 2005040996 W US2005040996 W US 2005040996W WO 2006053242 A3 WO2006053242 A3 WO 2006053242A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition
features
microelectronics
copper electrodeposition
composition
Prior art date
Application number
PCT/US2005/040996
Other languages
French (fr)
Other versions
WO2006053242A2 (en
Inventor
Vincent Paneccasio
Xuan Lin
Paul Figura
Richard Hurtubise
Original Assignee
Enthone
Vincent Paneccasio
Xuan Lin
Paul Figura
Richard Hurtubise
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36337269&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2006053242(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Enthone, Vincent Paneccasio, Xuan Lin, Paul Figura, Richard Hurtubise filed Critical Enthone
Priority to KR1020077013226A priority Critical patent/KR101138588B1/en
Priority to JP2007541369A priority patent/JP4888913B2/en
Priority to CN2005800464486A priority patent/CN101099231B/en
Priority to EP05851560.2A priority patent/EP1810322B1/en
Publication of WO2006053242A2 publication Critical patent/WO2006053242A2/en
Publication of WO2006053242A3 publication Critical patent/WO2006053242A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.
PCT/US2005/040996 2004-11-12 2005-11-14 Copper electrodeposition in microelectronics WO2006053242A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020077013226A KR101138588B1 (en) 2004-11-12 2005-11-14 Copper electrodeposition in microelectronics
JP2007541369A JP4888913B2 (en) 2004-11-12 2005-11-14 Copper electrical deposition method in microelectronics
CN2005800464486A CN101099231B (en) 2004-11-12 2005-11-14 Copper electrodeposition in microelectronics
EP05851560.2A EP1810322B1 (en) 2004-11-12 2005-11-14 Copper electrodeposition in microelectronics

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62770004P 2004-11-12 2004-11-12
US60/627,700 2004-11-12

Publications (2)

Publication Number Publication Date
WO2006053242A2 WO2006053242A2 (en) 2006-05-18
WO2006053242A3 true WO2006053242A3 (en) 2006-06-29

Family

ID=36337269

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/040996 WO2006053242A2 (en) 2004-11-12 2005-11-14 Copper electrodeposition in microelectronics

Country Status (8)

Country Link
US (3) US7303992B2 (en)
EP (1) EP1810322B1 (en)
JP (1) JP4888913B2 (en)
KR (1) KR101138588B1 (en)
CN (1) CN101099231B (en)
IN (1) IN2007DE03488A (en)
TW (2) TWI400365B (en)
WO (1) WO2006053242A2 (en)

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