WO2006053242A3 - Copper electrodeposition in microelectronics - Google Patents
Copper electrodeposition in microelectronics Download PDFInfo
- Publication number
- WO2006053242A3 WO2006053242A3 PCT/US2005/040996 US2005040996W WO2006053242A3 WO 2006053242 A3 WO2006053242 A3 WO 2006053242A3 US 2005040996 W US2005040996 W US 2005040996W WO 2006053242 A3 WO2006053242 A3 WO 2006053242A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- deposition
- features
- microelectronics
- copper electrodeposition
- composition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020077013226A KR101138588B1 (en) | 2004-11-12 | 2005-11-14 | Copper electrodeposition in microelectronics |
CN2005800464486A CN101099231B (en) | 2004-11-12 | 2005-11-14 | Copper electrodeposition in microelectronics |
JP2007541369A JP4888913B2 (en) | 2004-11-12 | 2005-11-14 | Copper electrical deposition method in microelectronics |
EP05851560.2A EP1810322B1 (en) | 2004-11-12 | 2005-11-14 | Copper electrodeposition in microelectronics |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62770004P | 2004-11-12 | 2004-11-12 | |
US60/627,700 | 2004-11-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006053242A2 WO2006053242A2 (en) | 2006-05-18 |
WO2006053242A3 true WO2006053242A3 (en) | 2006-06-29 |
Family
ID=36337269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/040996 WO2006053242A2 (en) | 2004-11-12 | 2005-11-14 | Copper electrodeposition in microelectronics |
Country Status (8)
Country | Link |
---|---|
US (3) | US7303992B2 (en) |
EP (1) | EP1810322B1 (en) |
JP (1) | JP4888913B2 (en) |
KR (1) | KR101138588B1 (en) |
CN (1) | CN101099231B (en) |
IN (1) | IN2007DE03488A (en) |
TW (2) | TW200632147A (en) |
WO (1) | WO2006053242A2 (en) |
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- 2005-11-14 CN CN2005800464486A patent/CN101099231B/en active Active
- 2005-11-14 US US11/272,999 patent/US7303992B2/en active Active
- 2005-11-14 JP JP2007541369A patent/JP4888913B2/en active Active
- 2005-11-14 WO PCT/US2005/040996 patent/WO2006053242A2/en active Application Filing
- 2005-11-14 KR KR1020077013226A patent/KR101138588B1/en active IP Right Grant
- 2005-11-14 EP EP05851560.2A patent/EP1810322B1/en active Active
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Also Published As
Publication number | Publication date |
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KR20070086082A (en) | 2007-08-27 |
IN2007DE03488A (en) | 2007-08-31 |
JP2008519908A (en) | 2008-06-12 |
US7303992B2 (en) | 2007-12-04 |
JP4888913B2 (en) | 2012-02-29 |
EP1810322A4 (en) | 2015-06-10 |
TWI400365B (en) | 2013-07-01 |
CN101099231A (en) | 2008-01-02 |
EP1810322A2 (en) | 2007-07-25 |
WO2006053242A2 (en) | 2006-05-18 |
US20070289875A1 (en) | 2007-12-20 |
US20060141784A1 (en) | 2006-06-29 |
TW200632147A (en) | 2006-09-16 |
USRE49202E1 (en) | 2022-09-06 |
CN101099231B (en) | 2011-06-29 |
KR101138588B1 (en) | 2012-06-27 |
US7815786B2 (en) | 2010-10-19 |
EP1810322B1 (en) | 2022-07-27 |
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