WO2006055003A1 - Systems and methods for creating crystallographic-orientation controlled poly-silicon films - Google Patents
Systems and methods for creating crystallographic-orientation controlled poly-silicon films Download PDFInfo
- Publication number
- WO2006055003A1 WO2006055003A1 PCT/US2004/039055 US2004039055W WO2006055003A1 WO 2006055003 A1 WO2006055003 A1 WO 2006055003A1 US 2004039055 W US2004039055 W US 2004039055W WO 2006055003 A1 WO2006055003 A1 WO 2006055003A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- grains
- orientation
- mask
- laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020077013682A KR101212378B1 (en) | 2004-11-18 | 2004-11-18 | SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED poly-SILICON FILMS |
JP2007543001A JP5068171B2 (en) | 2004-11-18 | 2004-11-18 | System and method for producing a crystallographically controlled polysilicon film |
EP04811722A EP1812958A1 (en) | 2004-11-18 | 2004-11-18 | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
PCT/US2004/039055 WO2006055003A1 (en) | 2004-11-18 | 2004-11-18 | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2004/039055 WO2006055003A1 (en) | 2004-11-18 | 2004-11-18 | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006055003A1 true WO2006055003A1 (en) | 2006-05-26 |
Family
ID=34959694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/039055 WO2006055003A1 (en) | 2004-11-18 | 2004-11-18 | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1812958A1 (en) |
JP (1) | JP5068171B2 (en) |
KR (1) | KR101212378B1 (en) |
WO (1) | WO2006055003A1 (en) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009206322A (en) * | 2008-02-28 | 2009-09-10 | Renesas Technology Corp | Semiconductor device, method of manufacturing semiconductor device, semiconductor manufacturing/inspecting device and inspecting device |
JP2011515833A (en) * | 2008-02-29 | 2011-05-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Flash optical annealing for thin films |
JP2011515834A (en) * | 2008-02-29 | 2011-05-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Lithographic method for producing uniform crystalline silicon thin films |
CN102181940A (en) * | 2011-04-08 | 2011-09-14 | 光为绿色新能源有限公司 | Preparation method of multicrystalline silicon texture |
US8415670B2 (en) | 2007-09-25 | 2013-04-09 | The Trustees Of Columbia University In The City Of New York | Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films |
US8426296B2 (en) | 2007-11-21 | 2013-04-23 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
US8445365B2 (en) | 2003-09-19 | 2013-05-21 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
US8507368B2 (en) | 2002-08-19 | 2013-08-13 | The Trustees Of Columbia University In The City Of New York | Single-shot semiconductor processing system and method having various irradiation patterns |
US8557040B2 (en) | 2007-11-21 | 2013-10-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparation of epitaxially textured thick films |
US8569155B2 (en) | 2008-02-29 | 2013-10-29 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
US8598588B2 (en) | 2005-12-05 | 2013-12-03 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing a film, and thin films |
US8614471B2 (en) | 2007-09-21 | 2013-12-24 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
US8617313B2 (en) | 2005-04-06 | 2013-12-31 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
US8715412B2 (en) | 2003-09-16 | 2014-05-06 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
US8734584B2 (en) | 2004-11-18 | 2014-05-27 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US8748326B2 (en) | 2009-11-05 | 2014-06-10 | V Technology Co., Ltd. | Device and method for forming low-temperature polysilicon film |
US8802580B2 (en) | 2008-11-14 | 2014-08-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
US8859436B2 (en) | 1996-05-28 | 2014-10-14 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US9466402B2 (en) | 2003-09-16 | 2016-10-11 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI459444B (en) * | 2009-11-30 | 2014-11-01 | Applied Materials Inc | Crystallization processing for semiconductor applications |
KR20210070417A (en) | 2019-12-04 | 2021-06-15 | 삼성디스플레이 주식회사 | Display device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19839718A1 (en) * | 1998-09-01 | 2000-03-02 | Strunk Horst P | Laser crystallization or crystal structure alteration of amorphous or polycrystalline semiconductor layers comprises paired laser pulse irradiation for extended melt time while maintaining a low substrate temperature |
US6300175B1 (en) * | 1998-06-09 | 2001-10-09 | Lg. Philips Lcd., Co., Ltd. | Method for fabricating thin film transistor |
US20020083557A1 (en) * | 2000-12-28 | 2002-07-04 | Yun-Ho Jung | Apparatus and method of crystallizing amorphous silicon |
DE10103670A1 (en) * | 2001-01-27 | 2002-08-01 | Christiansen Jens I | Textured crystalline silicon layer production using laser, includes control of energy intensity to achieve textured crystallites of specific diameter |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07273030A (en) * | 1994-03-28 | 1995-10-20 | Tokyo Electron Ltd | Method for polycrystallizing amorphous film of substrate and manufacture of liquid crystal display substrate |
US6573163B2 (en) * | 2001-01-29 | 2003-06-03 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films |
US6635555B2 (en) * | 2001-02-28 | 2003-10-21 | Sharp Laboratories Of America, Inc. | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films |
JP2003124230A (en) * | 2001-10-12 | 2003-04-25 | Hitachi Ltd | Thin film transistor device, method for manufacturing the device, and image display apparatus using the device |
JP2002203809A (en) * | 2001-10-25 | 2002-07-19 | Hitachi Ltd | Semiconductor device and its manufacturing method |
JP3980466B2 (en) * | 2001-11-09 | 2007-09-26 | 株式会社半導体エネルギー研究所 | Laser apparatus and laser irradiation method |
KR100618184B1 (en) * | 2003-03-31 | 2006-08-31 | 비오이 하이디스 테크놀로지 주식회사 | Method of crystallization |
-
2004
- 2004-11-18 JP JP2007543001A patent/JP5068171B2/en not_active Expired - Fee Related
- 2004-11-18 WO PCT/US2004/039055 patent/WO2006055003A1/en active Application Filing
- 2004-11-18 EP EP04811722A patent/EP1812958A1/en not_active Withdrawn
- 2004-11-18 KR KR1020077013682A patent/KR101212378B1/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6300175B1 (en) * | 1998-06-09 | 2001-10-09 | Lg. Philips Lcd., Co., Ltd. | Method for fabricating thin film transistor |
DE19839718A1 (en) * | 1998-09-01 | 2000-03-02 | Strunk Horst P | Laser crystallization or crystal structure alteration of amorphous or polycrystalline semiconductor layers comprises paired laser pulse irradiation for extended melt time while maintaining a low substrate temperature |
US20020083557A1 (en) * | 2000-12-28 | 2002-07-04 | Yun-Ho Jung | Apparatus and method of crystallizing amorphous silicon |
DE10103670A1 (en) * | 2001-01-27 | 2002-08-01 | Christiansen Jens I | Textured crystalline silicon layer production using laser, includes control of energy intensity to achieve textured crystallites of specific diameter |
Non-Patent Citations (1)
Title |
---|
CROWDER M A ET AL: "Parametric investigation of SLS-processed poly-silicon thin films for TFT applications", PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 427, no. 1-2, 3 March 2003 (2003-03-03), pages 101 - 107, XP004417451, ISSN: 0040-6090 * |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8859436B2 (en) | 1996-05-28 | 2014-10-14 | The Trustees Of Columbia University In The City Of New York | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
US8883656B2 (en) | 2002-08-19 | 2014-11-11 | The Trustees Of Columbia University In The City Of New York | Single-shot semiconductor processing system and method having various irradiation patterns |
US8507368B2 (en) | 2002-08-19 | 2013-08-13 | The Trustees Of Columbia University In The City Of New York | Single-shot semiconductor processing system and method having various irradiation patterns |
US9466402B2 (en) | 2003-09-16 | 2016-10-11 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
US8715412B2 (en) | 2003-09-16 | 2014-05-06 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
US8445365B2 (en) | 2003-09-19 | 2013-05-21 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
US8734584B2 (en) | 2004-11-18 | 2014-05-27 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US8617313B2 (en) | 2005-04-06 | 2013-12-31 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
US8598588B2 (en) | 2005-12-05 | 2013-12-03 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing a film, and thin films |
US8614471B2 (en) | 2007-09-21 | 2013-12-24 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
US9012309B2 (en) | 2007-09-21 | 2015-04-21 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
US8415670B2 (en) | 2007-09-25 | 2013-04-09 | The Trustees Of Columbia University In The City Of New York | Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films |
US8426296B2 (en) | 2007-11-21 | 2013-04-23 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
US8557040B2 (en) | 2007-11-21 | 2013-10-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparation of epitaxially textured thick films |
US8871022B2 (en) | 2007-11-21 | 2014-10-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparation of epitaxially textured thick films |
JP2009206322A (en) * | 2008-02-28 | 2009-09-10 | Renesas Technology Corp | Semiconductor device, method of manufacturing semiconductor device, semiconductor manufacturing/inspecting device and inspecting device |
US8569155B2 (en) | 2008-02-29 | 2013-10-29 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
JP2011515834A (en) * | 2008-02-29 | 2011-05-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Lithographic method for producing uniform crystalline silicon thin films |
JP2011515833A (en) * | 2008-02-29 | 2011-05-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Flash optical annealing for thin films |
US8802580B2 (en) | 2008-11-14 | 2014-08-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
US8748326B2 (en) | 2009-11-05 | 2014-06-10 | V Technology Co., Ltd. | Device and method for forming low-temperature polysilicon film |
US8889569B2 (en) | 2009-11-24 | 2014-11-18 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral soldification |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
CN102181940A (en) * | 2011-04-08 | 2011-09-14 | 光为绿色新能源有限公司 | Preparation method of multicrystalline silicon texture |
Also Published As
Publication number | Publication date |
---|---|
KR20070097442A (en) | 2007-10-04 |
EP1812958A1 (en) | 2007-08-01 |
JP5068171B2 (en) | 2012-11-07 |
JP2008521247A (en) | 2008-06-19 |
KR101212378B1 (en) | 2012-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8734584B2 (en) | Systems and methods for creating crystallographic-orientation controlled poly-silicon films | |
KR101212378B1 (en) | SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED poly-SILICON FILMS | |
US8598588B2 (en) | Systems and methods for processing a film, and thin films | |
US8715412B2 (en) | Laser-irradiated thin films having variable thickness | |
US7135388B2 (en) | Method for fabricating single crystal silicon film | |
US8012861B2 (en) | Systems and methods for preparing epitaxially textured polycrystalline films | |
US20020102824A1 (en) | Method of optimizing channel characteristics using laterally-crystallized ELA poly-si films | |
EP1912252A1 (en) | Polysilicon thin film transistor and method of fabricating the same | |
US9087696B2 (en) | Systems and methods for non-periodic pulse partial melt film processing | |
WO2011056787A1 (en) | Systems and methods for non-periodic pulse partial melt film processing | |
CN101111925A (en) | System and method for generating polysilicon film controlled on crystallization direction | |
JP2007281421A (en) | Method of crystallizing semiconductor thin film | |
US20050142897A1 (en) | Method for forming polycrystalline silicon film | |
JP4769491B2 (en) | Crystallization method, thin film transistor manufacturing method, thin film transistor, and display device | |
Van Der Wilt et al. | A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates | |
KR100713895B1 (en) | Method for forming polycrystalline film | |
JP4365757B2 (en) | Method for forming polycrystalline silicon film of polycrystalline silicon thin film transistor | |
Morikawa et al. | 33.3: Comparison of Poly‐Si TFT Characteristics Crystallized by a YAG2ω Laser and an Excimer Laser | |
JP2000114175A (en) | Semiconductor film crystallization method and manufacture | |
JP2005101311A (en) | Semiconductor device and its manufacturing method | |
KR20100084813A (en) | Method for forming polycrystalline film | |
EP2497105A1 (en) | Systems and methods for non-periodic pulse partial melt film processing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2007543001 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REEP | Request for entry into the european phase |
Ref document number: 2004811722 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004811722 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020077013682 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200480044730.6 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2004811722 Country of ref document: EP |