WO2006055476A2 - Method of integrating optical devices and electronic devices on an integrated circuit - Google Patents
Method of integrating optical devices and electronic devices on an integrated circuit Download PDFInfo
- Publication number
- WO2006055476A2 WO2006055476A2 PCT/US2005/041155 US2005041155W WO2006055476A2 WO 2006055476 A2 WO2006055476 A2 WO 2006055476A2 US 2005041155 W US2005041155 W US 2005041155W WO 2006055476 A2 WO2006055476 A2 WO 2006055476A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor substrate
- electronic device
- device portion
- semiconductor layer
- optical device
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 158
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 125000006850 spacer group Chemical group 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000001465 metallisation Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000007943 implant Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 230000008901 benefit Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Optical Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007541397A JP5107049B2 (en) | 2004-11-15 | 2005-11-14 | Method for integrating an optical device and an electronic device on an integrated circuit |
EP05822578A EP1854128A4 (en) | 2004-11-15 | 2005-11-14 | Method of integrating optical devices and electronic devices on an integrated circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/989,940 | 2004-11-15 | ||
US10/989,940 US7109051B2 (en) | 2004-11-15 | 2004-11-15 | Method of integrating optical devices and electronic devices on an integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006055476A2 true WO2006055476A2 (en) | 2006-05-26 |
WO2006055476A3 WO2006055476A3 (en) | 2009-05-14 |
Family
ID=36386883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/041155 WO2006055476A2 (en) | 2004-11-15 | 2005-11-14 | Method of integrating optical devices and electronic devices on an integrated circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US7109051B2 (en) |
EP (1) | EP1854128A4 (en) |
JP (1) | JP5107049B2 (en) |
WO (1) | WO2006055476A2 (en) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7080528B2 (en) * | 2002-10-23 | 2006-07-25 | Applied Materials, Inc. | Method of forming a phosphorus doped optical core using a PECVD process |
US8139130B2 (en) | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
US8274715B2 (en) | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
US7574090B2 (en) * | 2006-05-12 | 2009-08-11 | Toshiba America Electronic Components, Inc. | Semiconductor device using buried oxide layer as optical wave guides |
US7916362B2 (en) | 2006-05-22 | 2011-03-29 | Eastman Kodak Company | Image sensor with improved light sensitivity |
US8031258B2 (en) | 2006-10-04 | 2011-10-04 | Omnivision Technologies, Inc. | Providing multiple video signals from single sensor |
US7785983B2 (en) | 2007-03-07 | 2010-08-31 | Freescale Semiconductor, Inc. | Semiconductor device having tiles for dual-trench integration and method therefor |
US8211732B2 (en) | 2008-09-11 | 2012-07-03 | Omnivision Technologies, Inc. | Image sensor with raised photosensitive elements |
WO2012075350A2 (en) * | 2010-12-03 | 2012-06-07 | Bae Systems Information And Electronic Systems Integration Inc. | Method of integrating slotted waveguide into cmos process |
US9280377B2 (en) | 2013-03-29 | 2016-03-08 | Citrix Systems, Inc. | Application with multiple operation modes |
US9143530B2 (en) | 2011-10-11 | 2015-09-22 | Citrix Systems, Inc. | Secure container for protecting enterprise data on a mobile device |
US9599561B2 (en) | 2011-10-13 | 2017-03-21 | Affymetrix, Inc. | Methods, systems and apparatuses for testing and calibrating fluorescent scanners |
US8910239B2 (en) | 2012-10-15 | 2014-12-09 | Citrix Systems, Inc. | Providing virtualized private network tunnels |
US9971585B2 (en) | 2012-10-16 | 2018-05-15 | Citrix Systems, Inc. | Wrapping unmanaged applications on a mobile device |
US20140109072A1 (en) | 2012-10-16 | 2014-04-17 | Citrix Systems, Inc. | Application wrapping for application management framework |
US9595629B2 (en) * | 2012-10-22 | 2017-03-14 | Mellanox Technologies Silicon Photonics Inc. | Enhancing planarization uniformity in optical devices |
KR102007258B1 (en) * | 2012-11-21 | 2019-08-05 | 삼성전자주식회사 | Method of fabricating optoelectronic substrate |
US9989703B2 (en) * | 2012-11-30 | 2018-06-05 | International Business Machines Corporation | Semiconductor structure and method for manufacturing a semiconductor structure |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
KR20140095678A (en) * | 2013-01-25 | 2014-08-04 | 삼성전자주식회사 | Semiconductor apparatus including an optical device and an electronic device, and method of manufacturing the same |
US9387815B2 (en) | 2013-02-28 | 2016-07-12 | Kevin Goldstein | Apparatus for collection of debris escaping around a vehicle tailgate |
US10284627B2 (en) | 2013-03-29 | 2019-05-07 | Citrix Systems, Inc. | Data management for an application with multiple operation modes |
US9413736B2 (en) | 2013-03-29 | 2016-08-09 | Citrix Systems, Inc. | Providing an enterprise application store |
US9985850B2 (en) | 2013-03-29 | 2018-05-29 | Citrix Systems, Inc. | Providing mobile device management functionalities |
US9355223B2 (en) | 2013-03-29 | 2016-05-31 | Citrix Systems, Inc. | Providing a managed browser |
US9772461B2 (en) * | 2013-10-02 | 2017-09-26 | Photonics Electronics Technology Research Association | Semiconductor integrated circuit and method for manufacturing the same |
KR102590996B1 (en) * | 2018-10-17 | 2023-10-17 | 삼성전자주식회사 | Semiconductor device |
US10884192B1 (en) * | 2019-12-16 | 2021-01-05 | Hewlett Packard Enterprise Development Lp | Single-etch wide-bandwidth grating couplers with individually-tuned grating sections |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3569997A (en) * | 1967-07-13 | 1971-03-09 | Inventors And Investors Inc | Photoelectric microcircuit components monolythically integrated with zone plate optics |
US5483085A (en) * | 1994-05-09 | 1996-01-09 | Motorola, Inc. | Electro-optic integrated circuit with diode decoder |
US5535231A (en) * | 1994-11-08 | 1996-07-09 | Samsung Electronics Co., Ltd. | Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector |
US5937274A (en) * | 1995-01-31 | 1999-08-10 | Hitachi, Ltd. | Fabrication method for AlGaIn NPAsSb based devices |
US5963788A (en) * | 1995-09-06 | 1999-10-05 | Sandia Corporation | Method for integrating microelectromechanical devices with electronic circuitry |
KR100216593B1 (en) * | 1996-12-06 | 1999-08-16 | 정선종 | Method of fabricating compound semiconductor device |
US6096591A (en) * | 1997-06-30 | 2000-08-01 | Advanced Micro Devices, Inc. | Method of making an IGFET and a protected resistor with reduced processing steps |
JPH11274467A (en) * | 1998-03-26 | 1999-10-08 | Murata Mfg Co Ltd | Photo-electronic integrated-circuit device |
EP1107044A1 (en) * | 1999-11-30 | 2001-06-13 | Hitachi Europe Limited | Photonic device |
JP2002014242A (en) | 2000-06-28 | 2002-01-18 | Oki Electric Ind Co Ltd | Optical waveguide device |
AU2001281623A1 (en) | 2000-08-17 | 2002-02-25 | Mcmaster University | Silicon-on-insulator optical waveguide fabrication by local oxidation of silicon |
US6594422B2 (en) | 2001-05-02 | 2003-07-15 | Motorola, Inc. | Opto-coupling device structure and method therefor |
US6608945B2 (en) | 2001-05-17 | 2003-08-19 | Optronx, Inc. | Self-aligning modulator method and associated apparatus |
US6654511B2 (en) | 2001-05-17 | 2003-11-25 | Sioptical, Inc. | Optical modulator apparatus and associated method |
US6585424B2 (en) * | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6917727B2 (en) | 2001-09-10 | 2005-07-12 | California Institute Of Technology | Strip loaded waveguide integrated with electronics components |
US6839488B2 (en) | 2001-09-10 | 2005-01-04 | California Institute Of Technology | Tunable resonant cavity based on the field effect in semiconductors |
US6746948B2 (en) * | 2001-09-17 | 2004-06-08 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor light-emitting device |
GB0208255D0 (en) | 2002-04-10 | 2002-05-22 | Imec Inter Uni Micro Electr | Photonic crystal based fiber-to-waveguide coupler for polarisation independent photonic integrated circuits |
US6566722B1 (en) * | 2002-06-26 | 2003-05-20 | United Microelectronics Corp. | Photo sensor in a photo diode on a semiconductor wafer |
JP2006525677A (en) * | 2003-04-21 | 2006-11-09 | シオプティカル インコーポレーテッド | CMOS compatible integration of silicon-based optical devices with electronic devices |
US20050016446A1 (en) * | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
US20050214989A1 (en) * | 2004-03-29 | 2005-09-29 | Honeywell International Inc. | Silicon optoelectronic device |
EP1585171A1 (en) * | 2004-04-07 | 2005-10-12 | Andrea Pizzarulli | An SOI circuit having reduced crosstalk interference and a method for forming the same |
-
2004
- 2004-11-15 US US10/989,940 patent/US7109051B2/en not_active Expired - Fee Related
-
2005
- 2005-11-14 EP EP05822578A patent/EP1854128A4/en not_active Ceased
- 2005-11-14 JP JP2007541397A patent/JP5107049B2/en not_active Expired - Fee Related
- 2005-11-14 WO PCT/US2005/041155 patent/WO2006055476A2/en active Application Filing
Non-Patent Citations (1)
Title |
---|
See references of EP1854128A4 * |
Also Published As
Publication number | Publication date |
---|---|
US7109051B2 (en) | 2006-09-19 |
JP5107049B2 (en) | 2012-12-26 |
JP2008521216A (en) | 2008-06-19 |
US20060105479A1 (en) | 2006-05-18 |
WO2006055476A3 (en) | 2009-05-14 |
EP1854128A2 (en) | 2007-11-14 |
EP1854128A4 (en) | 2010-12-15 |
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