WO2006055961A2 - Sensor for detecting hgh frequency signals - Google Patents
Sensor for detecting hgh frequency signals Download PDFInfo
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- WO2006055961A2 WO2006055961A2 PCT/US2005/042393 US2005042393W WO2006055961A2 WO 2006055961 A2 WO2006055961 A2 WO 2006055961A2 US 2005042393 W US2005042393 W US 2005042393W WO 2006055961 A2 WO2006055961 A2 WO 2006055961A2
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0871—Complete apparatus or systems; circuits, e.g. receivers or amplifiers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/16—Spectrum analysis; Fourier analysis
- G01R23/163—Spectrum analysis; Fourier analysis adapted for measuring in circuits having distributed constants
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/16—Spectrum analysis; Fourier analysis
- G01R23/17—Spectrum analysis; Fourier analysis with optical or acoustical auxiliary devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
- H01Q1/247—Supports; Mounting means by structural association with other equipment or articles with receiving set with frequency mixer, e.g. for direct satellite reception or Doppler radar
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
Definitions
- the present invention is a device, or family of devices, designed for sensing RF signals, and more particularly for sensing RF signals in the gigahertz and terahertz regions.
- GHz and THz regions of the microwave spectrum have been identified as an area where macro molecule resonances may be detected without destructive ionization of the original molecules.
- Detection schemes for sensing these regions have primarily relied on the induction of a thermal change in extremely sensitive bolometers. These devices respond to a received signal by converting RF energy into a thermal change in the bolometer element, that in turn generates stress. This stress may be measured by detecting a static change in the capacitance shift as the element moves relative to a sensing electrode.
- Advanced bolometers are used in astronomy and other applications that utilize hot electrons, such as when the electrons that give the device its functionality have more energy than the rest of the electrons, in superconducting materials. While these systems are extremely sensitive, they are also extremely expensive and require a significant infrastructure of equipment to operate them. These approaches either provide a narrow frequency response per element and require an array of narrow responses with each element in the array having a slightly different response region, or provide magnitude data (but not frequency measurements) within their receiving bandwidth.
- a sensor that senses incident RF radiation comprising: an antenna suitable for receiving the incident RF radiation; a cantilever electrically coupled to the antenna, wherein the cantilever is affected by the received incident RF radiation; a converter for converting the effect on the cantilever into a measurable signal indicative of the received incident RF radiation; and a detector for sensing the measurable signal, wherein the detected sensed measurable signal indicates the received incident RF radiation.
- a box-type structure or interferometer may be employed in place of the cantilever.
- the sensor is capable of sensing RF signals in the GHz and THz regions.
- Figure 1 illustrates a sensor for sensing an RF signal according to an aspect of the present invention
- Figure 2 illustrates a variation of the present invention wherein a reference is added to the device of Figure 1 ;
- Figure 3 illustrates a sensor according to an aspect of the present invention
- Figure 4 illustrates a interferomic sensor utilizing the principle of a sensor according to an aspect of the present invention
- Figure 5 illustrates a reflective electrode for use in a device according to an aspect of the present invention
- Figure 6 illustrates an embodiment of the present invention utilizing an optical fiber based Fabry-Perot
- Figure 7 illustrates a box MEMS sensor according to an aspect of the present invention
- Figure 8 illustrates an alternative Box MEMS sensor according to an aspect of the present invention
- Figure 9 illustrates another alternative box MEMS sensor according to an aspect of the present invention depicting contacts for the sensor of Figure 8;
- Figure 10 illustrates a further alternative box MEMS sensor according to an aspect of the present invention depicting an offset anchor for the sensor of Figure 8;
- Figure 11 illustrates a Photoelectric MEMS array sensor according to an aspect of the present invention
- Figure 12 illustrates a plan view of the photoelectric pixel array used in
- Figure 13 illustrates an enlarged plan view of the selected portion 13 in Figure 11 (i.e. with the pixel array substrate and photoelectric pixel removed for simplicity purposes) according to an aspect of the present invention
- Figure 14 illustrates an RF MEMS array sensor according to an aspect of the present invention
- Figure 15 illustrates a plan view of the RF antenna pixel array used in
- Figure 16 illustrates an enlarged plan view of the selected portion 16 in Figure 14 (i.e. with the pixel array substrate and RF antenna pixel removed for simplicity purposes) according to an aspect of the present invention.
- the present invention may provide a sensor capable of working with broadband emitters and may be able to provide frequency mapping of the received signals, thereby simplifying the electronics required for spectral analysis. Further, the device of the present invention may be designed to have a variety of sensitivities or gains to be used in a wide variety of environments and applications.
- a mechanically controllable membrane such as a microelectromechanical system (MEMS) for example, may be used.
- MEMS microelectromechanical system
- MEMS are typically integrated micro devices or systems combining electrical and mechanical components, fabricated using integrated circuit processing techniques and may range in size from nanometers to millimeters. These systems may sense, control and actuate on the micro scale, and may function individually or in arrays to generate effects on the macro scale.
- MEMS microelectromechanical system
- a MEMS may include a base and a deflector.
- the base and deflector may be made from materials as is known to those possessing and ordinary skill in the pertinent arts, such as for example, InP, GaAs, SiN, Si, or Si ⁇ 2 -
- the MEMS may operate wherein an application of energy to the MEMS causes a longitudinal deflection of the deflector with respect to the base. The longitudinal displacement of the deflector from the base is proportional to the energy applied to the MEMS.
- a wide variety of MEMS structures may be applicable to this sensing technique.
- MEMS can be integrated into devices which have mechanical advantages and therefore can increase detection of signal.
- such an approach may be more sensitive to long scale thermal or other environmental changes, and may require recalibration periodically to provide an accurate and sensitive measurement.
- magnetic fields may be used instead of electrical fields, eliminating the need for a drive or reference field generator.
- the device of the present invention may be fabricated on a variety of materials, including silicon.
- the size of the elements may be variable so that this type of detector may be fabricated for use over wide frequency ranges with particular central frequencies.
- this invention may be capable of both detecting the signal and measuring its frequency.
- the sensitivity of the sensor described herein may be enhanced by the elimination of ambient noise generators that may affect traditional sensing techniques for identifying the position of the MEMS. By creating a baseline oscillation in the sensor and utilizing a reference element, the affects of temperature, humidity, vibration and other environmental affects that may impact the sensitivity of the receiver may be eliminated.
- the gain of this MEMS sensor may be increased by changing the length, or resonance frequency, of the MEMS structures. Designing the MEMS to resonate at a specific RF frequency may also increase the sensitivity of this receiver, especially at that frequency.
- the sensitivity of this sensor may be enhanced by the elimination of ambient noise generators that would affect a traditional inductance or capacitance detector. By creating a baseline oscillation, such as, for example, in a two element sensor, and utilizing one of the elements as a reference, ambient affects, such as temperature, humidity, vibration, and other environmental affects, may be eliminated or reduced.
- each MEMS may be configured as a cantilever, to thereby sense the magnitude and frequency of a received RF signal, such as in the GHz and THz region, for example.
- a first MEMS may be a reference and a second MEMS may be the signal receiving element.
- a driven oscillation may be used to generate a known frequency within the MEMS.
- the second MEMS Upon receiving an incident signal, the second MEMS may be affected by a change in the charge and a corresponding change in the oscillation while the first MEMS remains isolated from the incoming signal.
- the variation in oscillation of the second MEMS may change the field interaction with a detection electrode that senses the position of the MEMS, such as by induction, capacitance, electron tunneling, piezoelectric stress, and interference, for example.
- the signal from the electrode correspondent to the second MEMS may then be compared to the signal from the reference MEMS electrode, which may remain in stable oscillation. Such a comparator may subtract these signals to provide an output signal correspondent to the incoming signal.
- the output signal may be a change in the magnitude of the receiving element.
- the combined signal may be the beat frequency between the oscillation frequency and the incoming signal frequency. This beat frequency may be converted to the frequency of the incoming signal since the oscillation frequency is known. The beat frequency equals the received frequency minus the generated frequency. If no oscillation frequency is used, the incoming signal may be directly read, albeit with additional environmental effects. As may be realized by those possessing an ordinary skill in the pertinent arts, when calculating signal values, and increase in the accuracy of the calculation may result from the use of multiple measurements in the calculation.
- another pair of MEMS may be used to provide another set of data points and driven at an offset oscillation frequency.
- the resulting signal may represent two different beat frequency patterns that may be converted to the frequency of the incoming signal, and each output signal may be used to refine the conversion to the frequency of the incoming signal. Additional pairs of MEMS may also be used to further refine the measurements described hereinabove.
- the present invention may also provide for a highly sensitive detector that is capable of being fabricated in high volume and at low cost for use in GHz and THz sensor products, such as bio-threat and chemical sensors.
- the present invention may provide the ability to up-convert the RF signal incident on an array into an optical image capable of being captured on a photo-sensor or an imaging array, such as a CCD, for example.
- Sensor 100 may include a MEMS 110, an antenna 120, a source emitting a beam 130, a detector 140, and an aperture 150.
- MEMS 110 may be coupled to antenna 120 such that signals incident on antenna 120 are coupled to MEMS 110 to effect the position of the cantilever of MEMS 110.
- MEMS can be incorporated into the antenna structure such that the charge on the MEMS varies as the antenna resonates.
- the MEMS device is connect to the antenna, but is can be positioned below the antenna structure (i.e. not an inherent part of the antenna itself - see Figure 14 which is explained below).
- the MEMS changes its charge as the antenna resonates and sends charge down into the circuit.
- the MEMS is therefore part of the capactive value of the antenna system, but it is not part of the dipole member.
- Another alternative technique is to include the MEMS device as part of a waveguide.
- the MEMS doesn't oscillate at THz frequency. Rather.the resonate charge is actually a charge built up on the MEMS device and thus, the MEMS integrates over time. By adding a reference signal, a beat frequency is obtained which is another way of performing the integration.
- a beat frequency is obtained which is another way of performing the integration.
- Beam 130 may be directed onto the surface of MEMS 110 such that as MEMS 110 is affected by incident signals, beam 130 deviates responsive thereto. More specifically, as MEMS 110 is affected by the incoming signal, the electrical characteristics of MEMS 110 may change. As the electrical characteristics vary MEMS 110, fixed at a first end, changes the angle at a second end free to move as a cantilever, as shown. This second end of the MEMS may move relative to a base 111. The electrical characteristics of MEMS 110 effects the degree of deflection or frequency of oscillation of the free end of MEMS 110. As this effect occurs the distance between the second end of MEMS 110 and base 111 changes.
- Detector 140 may be positioned such that deviations in beam 130 may be monitored at detector 140. Further, aperture 150 may be positioned near to detector 140 in a position to limit beam 130 as would be evident to those possessing an ordinary skill in the pertinent arts.
- a Gaussian beam for example, may have a beam profile that moves across the detector based on the angle of the second end of MEMS 110. As this beam traverses the detector , a beam stop may be used to control the available incident angle of detectable beams.
- the effect of the signal is coupled to MEMS 110, which in turn affects the angle of incidence and exit of beam 130, which is detected at detector 140.
- This detection at detector 140 corresponds to the incoming signal by having a different signal detected for each position of the second end of MEMS 110, which is related to the electrical characteristic of the signal on MEMS 110.
- beam 130 is Gaussian, for example, a shift in beam 130 on aperture 150 may cause a decrease in the signal on detector 140 according to known slit/Gaussian properties.
- the charge differential between MEMS 110 and the common electrode 111 may vary causing MEMS 110 to change its spacing or position relative to the common electrode.
- the incoming charge from the received RF signal may change the oscillation frequency of the MEMS 110.
- MEMS 110 may be designed to move so that the movement changes the angle of incidence beam 130. Such changes in MEMS 110 may be responsive to an applied external electrical field resulting from receipt of an electromagnetic wave of the proper wavelength region. MEMS 110 may be deflected due to its proximity to a common electrode that provides a static or known oscillating field on the element As the potential of the MEMS changes, a charge differential between the element and the common electrode may vary, which may cause the MEMS to change its spacing or position relative to the common electrode. According to an aspect of the present invention, MEMS 110 may be oscillated at a known frequency such that the incoming charge from the received RF signal may change the oscillation frequency of MEMS 110.
- An optical beam 130 from a laser or other source such as a parallel beam of light, a Gaussian or other known variable intensity energy pattern across the beam diameter, for example, may used to illuminate MEMS 110.
- Beam 130 may be designed to diverge in angle, thereby creating a larger diameter spot size at photo-sensor 140.
- Sensor 140 may be designed to measure the intensity of beam 130 at one point with a well-defined beam diameter.
- the incoming RF signal may change the measured beam intensity as MEMS 110 is deflected.
- the frequency of the beam intensity measured by sensor 140 may change as the charge imposed by the incoming RF signal changes the oscillation pattern of MEMS 110.
- the sensitivity or gain of such a configuration may be manipulated by varying the parameters of the beam, such as the diameter of the beam at the photo-sensor or the intensity pattern of the beam, varying the deflection sensitivity of the MEMS, changing the geometry of the system, such as by varying the distance between the MEMS and the photo ⁇ sensor, or by changing the responsive characteristics of the system, such as by varying the frequency of the light used and the photo-sensors sensitivity to that frequency.
- a variation of the sensitivity or gain of a system according to the present invention may be achieved a number of ways, such as by varying the interference mode at the photo-sensor, varying the electro-mechanical deflection sensitivity of the MEMS, changing the path length difference between the MEMS and the photo-sensor, and varying the frequency of the light used and the photo-sensors sensitivity at that frequency, for example.
- Variances on this design may include a magnetic version of a MEMS, and as the charge on the MEMS varies, the deflection in the magnetic field may perform the same function as in the electrical field version described herein above.
- Such a magnetic version may be advantageous because such a configuration may not need electrical power to operate and may provide THz sensing in remote areas where power is not available or not wanted.
- the present invention may also include the use of two, or multiple, MEMS 210, 210'.
- a first MEMS 210' may act as a reference, and both MEMS 210 may be oscillated to provide a method of elimination for environmental noises.
- MEMS 210 may interact with a signal 220.
- a second end of MEMS 210 may deflect with respect to base 211 in response to the signal 220.
- a second MEMS isolated form incoming signal may react to ambient or environmental conditions.
- the reaction MEMS 210 to signal may include such reaction to ambient or environmental conditions.
- By measuring the reaction with MEMS 210' may allow an accounting for these noise signals to be made.
- This noise may cause MEMS 210' to react and second end of 210' to deviate with respect to 211' as discussed hereinabove.
- This detection may be measured and equated to noise. Since base 211 and base 211 ' are equated, the noise on each channel 210, 210' may be equated. By accounting for the noise on channel 210 measurement of 220 can be made more accurate.
- the present invention may include MEMS 210 operating in a magnetic field, as opposed to the electric field described above, such that as the charge on MEMS 210 varies, MEMS 210 may deflect in the magnetic field as discussed hereinabove. While principally operating the same as an electrical field device, a magnetic version may not need electrical power and may provide sensing in areas where providing power is an issue, where it may be difficult to deliver power, or where a power source may be unwanted, such as in remote areas or areas where such power may be
- detection of the induction of a charge differential on MEMS 210 may in turn be deflected relative to a common electrode 211 , 211 '.
- the movement of MEMS 210 may be measured by the inclusion of beam 130 that is deflected by MEMS 210 to receiving photo sensor 140.
- the deflection of beam 130 may provide an extremely accurate measurement of the position of MEMS 210 and thereby detecting the RF inducted signal.
- the motion of the detection element may be compared against another identical element that is isolated from the signal and serves as a reference. This approach greatly increases the sensitivity of the detector and reduces the affects of noise from ambient sources. Beat frequency analysis of the oscillation provides the ability to identify the frequency of the received signal.
- Sensor 300 may include a source 310, a beam splitter 320, a converger 330, a sensor MEMS 340, a reference MEMS 350 and a detector 360.
- source 310 may be split into multiple beam paths by beam splitter 320.
- the multiple beam paths may be converged by converger 330.
- a first of the multiple beam paths may be incident on sensor MEMS 340 and a second beam path may be incident on reference MEMS.
- Each of the multiple beam paths may be incident on detector 360, such that variations in path length between the multiple beam paths may produce interference on detector 360.
- FIG. 4 where there is shown a interferomic sensor utilizing the principle of sensor 300 according to an aspect of the present invention.
- the present invention may utilize an array of MEMS 450 and common electrode 440, which are reflective and designed to change the optical path length between MEMS 450 and Fabry-Perot Interference stack 470 as well as an optical interferometer, such as a Fabry-Perot structure, for example.
- MEMS 450 When an external electrical field is applied to MEMS 450, such as by receipt of an electromagnetic wave of the proper wavelength region, MEMS 450 receiving this signal may be deflected due to its proximity to a common electrode that provides a fixed position charge field.
- a beam from source 410 may be expanded and collimated to uniformly illuminate MEMS receiving array including sensor MEMS 450 and optionally an additional reference MEMS.
- the beam may pass through a beam splitter 420 for providing separation of the incoming beam from the reflected beam returned from MEMS array.
- the beam may pass through the beam splitter and then through a Fabry-Perot interferometer stack, which may be designed as a double pass interferometer.
- the phase of the light reflected from the MEMS may create constructive or destructive interference and thereby create an intensity variation in the return beam that is representative of the position of reflective MEMS element 450, for example.
- a MEMS element 450 moves with changes in the electrical charge received its position change may affect the optical phase in the interferometer and thereby change the intensity of the light in the return beam.
- the sensor Once calibrated without an incoming signal, the sensor may indicate deflection of the receiving element versus its reference position.
- the return beam with the intensity variation information from the received signal may be deflected by the beam splitter to either a photo sensor or to an optica! imaging array 460.
- the single photo sensor version may register an average change in the value of the array.
- the optical imaging array such as a CCD, may provide an image of the output from the array, and with the use of the correct RF collection design may provide a visual image of the microwave image received by the MEMS array.
- the MEMS array may act as an imaging up-converter for GHz and THz radiation.
- the optional reference MEMS may be shielded from the incoming RF signal and thereby act as a reference.
- an additional drive may be added to the array elements that drive both the imaging MEMS elements and those that are acting as reference elements.
- the use of reference MEMS may allow the minimization of sensing artifacts such as may occur from changes in ambient conditions of the sensor, such as changes in temperature or humidity.
- additional measurements may be made to determine the variation in frequency between the incoming signal and the reference oscillation and thereby provide the frequency of the received signal.
- a reflective electrode 500 for use in a device according to an aspect of the present invention.
- a MEMS 510 may be reflective and designed to move in a linear fashion when an external electrical field is applied to it via receipt of an electromagnetic wave of the proper wavelength region.
- MEMS 510 may be deflected due to its proximity to a common electrode that provides a static field on the element.
- the charge differential between the element and the common electrode 520 may vary, causing the element to change its spacing or position relative to the common electrode.
- MEMS 510 may be reflective and may move in a linear fashion so as to be the active element in an optical interferometer, for example.
- a Fabry- Perot interferometer may be one type of interferometer that may be used, and may provide a linear pathway for the light to pass through and then reflect back from MEMS within the aperture of an optical fiber. Such a structure may allow the light from a source traveling through the optical fiber to reflect off of MEMS, and either constructively or destructively interfere as it passes back into the fiber. At the opposite end of the fiber the returning light may be separated and its intensity measured to determine if an RF signal has been received.
- Figure 6 illustrates a photodetector and collector optics 660, beam splitter 620, light source 610, fiber optics 666, and stack of dielectric filters 667 (used to create a Fabry-Perot interferometer).
- Antenna 670 is directly connected to a MEMS membrane mirror 671 such that as the mirror oscillates back and forth, it will change the wavelength between the stack and the mirror and therefore the interferometer will vary between a bright reflection and black dependent on how the mirror moves and how the interferometer is bent.
- the ground plane 672 is for the antenna and MEMS to resonates against in terms of charge.
- detection of extremely high frequency pulses in the 100's of GHz and THz frequencies may be achieved.
- Other attempts in the art to detect such signals include conversion of the signal to either thermal stress or optical interaction causing polarization changes in a laser beam.
- the technique described here utilizes MEMS elements to detect the received signal.
- FIG. 7 there is shown a MEMS resonate box sensor according to an aspect of the present invention.
- a MEMS may be placed in a balanced electrical field that is unbalanced by the received signal that is imposed on one side of the MEMS.
- the imbalance may cause MEMS to oscillate in a manner different to that caused by oscillations in the drive source that provides the initial electrical field.
- This imbalanced oscillation may be detected with either electrical or optical means.
- Figure 7 includes a box-type MEMS resonator 710 and anchor 780 connected to electica! ground.
- Sensing electrodes 760 sense the position of the MEMS resonator 710, drive electrodes 711 one of which is connected to antenna 770.
- Drive signal generator 778 produces a phase-shift delay 777 for driving MEMS into a known oscillation mode. When the antenna receives a signal, the phase will change and torque the MEMS resonate box.
- the resonate box operates in the 1 GHz frequency range and senses THz by having parallel signals at THz frequencies applied to both sides of the box. These pulses are simply square waves at a frequency near the desired detection wavelength.
- the box is the path to ground for the incoming signal.
- a received signal would then interact with the signal on one side of the box. This interaction will be either an increase in the magnitude of the signal when the two pulses are in phase, a decrease when they are out of phase or a beat frequency interaction resulting in a lower frequency oscillation than either of the two signals.
- the potential field on the box on the side of that the incoming signal is applied is changed compared to the side where only the reference signal is applied. This change then causes the box to oscillate and that motion can then be detected via, for example, optical or electrical techniques.
- the sensor will also need a second box resonator to act as a comparator thus handling parasitic capacitance, thermal issues, vibration, etc.
- Figure 8 illustrates antenna 870, MEMS resonator 810 and anchor
- Sensing electrodes 860 sense the position of the MEMS resonator 810.
- Figure 8 is similar to the device of Figure 7 with two additional drive electrodes 811. This configuration produces a more rotational resonance around the anchor point 880 by torquing only one end of the MEMS resonator (i.e. rather than one side per Figure 7).
- the phase-shift delay is included with the Figures 8-10 embodiments but are not shown for simplicity purposes.
- each dipole element is connected to a different part of the resonator.
- One dipole element is connected to one drive electrode 911 and the other dipole element is connected to the center of the MEMS resonator 910.
- the oscillation will be transferred to the MEMS device.
- an offset anchor 1080 may optionally be provided to the sensor of Figure 8 to provide mechanical gain of received signals by changing the point of torquing.
- MEMS structures such as resonate box cantilevers or resonate comb structures may be used to oscillate at up to 1.6 GHz, for example.
- High frequency of oscillation may provide high speed detection of any imbalance in the charge applied to the MEMS.
- the present sensor design may incorporate MEMS with electrodes on either side of the resonate structure.
- the sensor may include a GHz or THz signal generator to provide a drive signal to both sides of the MEMS. With the phase and power applied to both sides substantially constant, MEMS may be balanced or in a stable oscillation.
- a received signal of a frequency similar to the drive frequency is introduced on one side of MEMS, an interaction with the drive frequency may create either an increased potential on one side, when the signals are in phase, a decreased potential if the signals are out of phase, or a beat frequency interaction if the signals are not of the same frequency.
- the potential on the receiving side of MEMS may be changed, resulting in MEMS changing position or oscillation characteristics suitable for detection.
- the present invention may drive the MEMS as a field strength sensor.
- the interaction between the incoming signal and MEMS may be based upon the change in electrical charge on either the MEMS or
- Mechanical gain of the received signal may be achieved by injecting the received signal at one corner, or in another non-symmetrical manner, of a box MEMS such that a shaking oscillation may be created causing the opposite end of the box to move more.
- Such an affect may be accomplished by either having less or no drive energy on the opposite end, or by building the MEMS so that its mechanical leverage is designed to move the opposite end more.
- the MEMS may incorporate an antenna structure or a sensing material that produces a charge shift in the MEMS. Discharge of this electrical charge on the MEMS may be by an electrical circuit connecting the MEMS to a ground, or by a contact or MEMS switch that provides a discharge path between readings.
- the interaction between the incoming signal and the MEMS may be enhanced by incorporating the MEMS as a component of a resonator where the selected frequency of the received signal may establish a standing wave resonance or may reflect within the structure.
- the MEMS elements may be used to both sense the received signal and change the resonance frequency of the sensor. In such a configuration, the sensing element may be used to scan over a select frequency range.
- Comb structures on the electrodes and the MEMS may enhance interactions between the two and may provide sensing by capacitive changes.
- Optical sensing may be used to provide sensing of MEMS movement and may provide a gain to the received signal.
- the incorporation of a two MEMS architecture to fabricate a heterodyne receiver may allow the system to both detect and minimize the noise level of detection.
- This sensor may operate in ambient environments, may be broadband or solid state, and may allow for use in applications where miniaturization is important, such as in portable sensors, scanning arrays and imaging starring arrays, for example.
- FIG. 11 illustrates an exemplary Photoelectric MEMS array sensor
- Photoelectric pixel array 1103 which includes a pixel array substrate 1101 which functions as an optical window.
- Photoelectric pixel array 1103 includes a plurality of photoelectric pixels 1102 (i.e. used to generate electricity) which are connected to the substrate 1101.
- a contact 1180 (made of, for example, gold bead - see Figure 13) transmits the electrical charge generated in the photoelectric element to one of the two MEMS elements 1110, 1112 each having one end resting on the top surface of MEMS base 1109.
- a sensing MEMS element 1110 builds up a charge which bends the MEMS element toward the sensing electrode 1160, and a reference MEMS element 1112 is provided and similarly connected to a reference electrode 1162.
- Figure 11 also includes drive electrode 1111 and base 1199 (made of, for example, silicon). Piezoelectric or magnetostrictive pixels may be used as an alternative type sensing element in place of the photoelectric pixels mentioned above.
- Figure 12 illustrates a plan view of the photoelectric pixel array 1103 used in Figure 11.
- Figure 13 illustrates an enlarged plan view of the selected portion 13 in Figure 11 (i.e. with the pixel array substrate and photoelectric pixel removed for simplicity purposes).
- Figure 14 illustrates an exemplary RF MEMS array sensor 1400. This particular sensor differs from the sensor of Figure 11 in that an RF pixel array 1403 is being utilized in place of the photoelectric pixel array 1103 described above.
- the RF array 1403 includes a plurality of RF devices such as, for example, an H-shaped antenna pixels/dipoles 1402 as shown in Figures 14 and 15.
- Figure 14 utilizes a plurality of waveguide apertures within substrate 1401 to direct the received signal to the individual RF antenna pixels 1402 within the RF array 1403.
- Figure 15 illustrates a plan view of the RF antenna pixel array 1403 used in Figure 14.
- Figure 16 illustrates an enlarged plan view of the selected portion 16 in Figure 14 (i.e. with the pixel array substrate and RF antenna pixel removed for simplicity purposes).
- Staring RF arrays may be formed with the sensors described herein, with elements of the array designed to operate at different frequencies. Such a configuration may allow the array to perform the function of a wide bandwidth receiver with frequency specific elements distributed across the bandwidth of interest. In such a configuration the array need not be optimized to be an imaging array, but instead may provide spectral analysis of the scene within its view.
- radiation of various types can be detected by designing the photoelectric pixels to interact with the radiation to produce electrons that change the charge of the sensing MEMS. Radiation types such as, for example, IR, visible light, UV, X-Rays, alpha, beta, gamma, and neutrons can be detected in this manner.
- This sensor architecture provides the ability for a design separation between the element reacting to the external signal or stimulus and the MEMS element that is used to measure the reaction of the interacting element (photo-electric pixel for example). This provides the ability to maximize the performance of each of these component elements.
- a photo-electric pixel can be fabricated at any size or shape to provide the desired sensitivity and aperture, while the MEMS elements can be independently designed to provide the maximum sensitivity to the electrical signal produced by the photo-electric element. If the MEMS were required to be the same size as the photoelectric pixel it would not retain the ability to provide a high level of sensitivity to the electrical signal from the photoelectric pixel.
- GHz and THz imaging arrays may be capable of providing images of obscured objects, such as those obscured under clothing or within packages, for example.
- the starring array With the use of imaging at specific frequencies or by using spectral scanning, it may be possible for the starring array to provide chemical analysis of the object in view.
- RF lenses may be formed to permit the starring array to become an RF camera and thereby allow the optical image created by this invention to be a true image of the scene at the RF frequency of its sensor design.
- a multi-band sensing device is provided by designing and/or optimizing portions of the array to be sensitive to different desired sensing regions. For example, each element of the array is slightly off- tuned from the previous element so as to provide a continuous spectrum broadband spectrometer.
- array architectures may be employed.
- individual elements of the array can be tuned to specific emission frequencies of known chemicals or compounds such that when the pixels associated with that known chemical or compound become active, the array can signal the presence of that known chemical or compound.
- sensor materials such as millimeter wave and THz antennas, along with photoelectric pixels at various frequencies, a wide spectral range can be used to identify chemicals or compounds. Such a device would be considered to be hyper-spectral.
- generation of the THz reference signal can be done several ways, 2 examples of which are as follows:
- [70] Utilizing high speed clock circuits it is possible to generate pulses up to 10 GHz in frequency. By taking two of these clock signals and designing them to be out of phase and then taking the signals and passing those through a set or potentially adjustable delay line a slight shift in their phase can be achieved. When the two signals are combined the result is a cancellation of the signal except where the pulses match due to the delay set by the delay line. This then provides a series of pulses that can be set to be in the THz range. By combining multiple clocks of this nature, a continuous wave signal can be generated. Alternatively, utilizing resonate MEMS devices in a similar manner to generate pulses that are then combined and via phase shifting result in higher frequency pulses.
- THz pulses can be generated by utilizing laser diodes to generate two light beams at two different frequencies and then integrating the two beams within crystals like ZnTe, GaP, or specially designed polymer stacks.
- the beat frequency between the two beams can be set to be in the THz range and the crystal or polymer material converts the optical signal into a THz output.
- This application can be used to sense sources of emission such as a biohazard (e.g. nuclear or magnetic radiation).
- the sensor can function as part of a spectroscopic detector (e.g. whether in an emission, absorption, or transmission context).
- the sensor can also function as a switch that is actuated upon selective exposure to desired wavelengths.
Abstract
Description
Claims
Priority Applications (2)
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JP2007543418A JP2008521015A (en) | 2004-11-20 | 2005-11-21 | High frequency signal detection sensor |
EP05852042A EP1846983A4 (en) | 2004-11-20 | 2005-11-21 | Sensor for detecting hgh frequency signals |
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WO2017158130A1 (en) | 2016-03-16 | 2017-09-21 | Centre National De La Recherche Scientifique - Cnrs | Detector for terahertz electromagnetic waves |
US10520365B2 (en) | 2016-03-16 | 2019-12-31 | Centre National de la Recherche Scientifique—CNRS | Detector for terahertz electromagnetic waves |
WO2018219652A3 (en) * | 2017-05-31 | 2019-01-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Measurement systems, methods for providing such systems and methods for measuring electromagnetic radiation of a device under test |
Also Published As
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WO2006055961A3 (en) | 2007-08-09 |
EP1846983A2 (en) | 2007-10-24 |
US20060284774A1 (en) | 2006-12-21 |
EP1846983A4 (en) | 2010-06-02 |
US7280078B2 (en) | 2007-10-09 |
US8115693B2 (en) | 2012-02-14 |
US20120007585A1 (en) | 2012-01-12 |
JP2008521015A (en) | 2008-06-19 |
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