WO2006060452A3 - Piezoresistive strain concentrator - Google Patents

Piezoresistive strain concentrator Download PDF

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Publication number
WO2006060452A3
WO2006060452A3 PCT/US2005/043259 US2005043259W WO2006060452A3 WO 2006060452 A3 WO2006060452 A3 WO 2006060452A3 US 2005043259 W US2005043259 W US 2005043259W WO 2006060452 A3 WO2006060452 A3 WO 2006060452A3
Authority
WO
WIPO (PCT)
Prior art keywords
strain
gap
structures
concentrator
piezoresistive
Prior art date
Application number
PCT/US2005/043259
Other languages
French (fr)
Other versions
WO2006060452A2 (en
Inventor
Leslie Bruce Wilner
Original Assignee
Endevco Corp
Leslie Bruce Wilner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Endevco Corp, Leslie Bruce Wilner filed Critical Endevco Corp
Priority to EP05848907.1A priority Critical patent/EP1828735B1/en
Priority to CA002590407A priority patent/CA2590407A1/en
Priority to JP2007544451A priority patent/JP2008522193A/en
Publication of WO2006060452A2 publication Critical patent/WO2006060452A2/en
Publication of WO2006060452A3 publication Critical patent/WO2006060452A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
    • G01L1/2231—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports the supports being disc- or ring-shaped, adapted for measuring a force along a single direction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/141—Monolithic housings, e.g. molded or one-piece housings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Abstract

A piezoresistive strain concentrator that converts mechanical movement into electrical output and a process for fabricating the concentrator are provided. The device includes a strain sensing structure composed of a piezoresistive strain sensitive element that spans a gap in a substrate. The strain sensing structure is supported on a strain concentrating structure also spanning the gap that has vertical walls extending to a cross-section at the base of the gap, both structures being etched from the substrate. The structure of the strain-concentrating support for the strain sensitive element is fabricated by deep reactive ion etch (DRIE). The strain sensing structure has an increased sensitivity, a low gage factor and an increased resistance to buckling and fracture compared to previous strain gage structures. Several of the strain sensing structures can be connected in a sequence in a bridge circuit.
PCT/US2005/043259 2004-11-30 2005-11-29 Piezoresistive strain concentrator WO2006060452A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP05848907.1A EP1828735B1 (en) 2004-11-30 2005-11-29 Piezoresistive strain concentrator
CA002590407A CA2590407A1 (en) 2004-11-30 2005-11-29 Piezoresistive strain concentrator
JP2007544451A JP2008522193A (en) 2004-11-30 2005-11-29 Piezoresistive strain concentrator

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/000,512 US6988412B1 (en) 2004-11-30 2004-11-30 Piezoresistive strain concentrator
US11/000,512 2004-11-30

Publications (2)

Publication Number Publication Date
WO2006060452A2 WO2006060452A2 (en) 2006-06-08
WO2006060452A3 true WO2006060452A3 (en) 2007-04-19

Family

ID=35613934

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/043259 WO2006060452A2 (en) 2004-11-30 2005-11-29 Piezoresistive strain concentrator

Country Status (7)

Country Link
US (3) US6988412B1 (en)
EP (1) EP1828735B1 (en)
JP (1) JP2008522193A (en)
KR (1) KR20070102502A (en)
CN (1) CN100578174C (en)
CA (1) CA2590407A1 (en)
WO (1) WO2006060452A2 (en)

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Also Published As

Publication number Publication date
CN100578174C (en) 2010-01-06
US20060117871A1 (en) 2006-06-08
KR20070102502A (en) 2007-10-18
WO2006060452A2 (en) 2006-06-08
EP1828735A2 (en) 2007-09-05
CN101111751A (en) 2008-01-23
US7146865B2 (en) 2006-12-12
EP1828735B1 (en) 2014-09-17
JP2008522193A (en) 2008-06-26
EP1828735A4 (en) 2010-01-06
CA2590407A1 (en) 2006-06-08
US20060130596A1 (en) 2006-06-22
US6988412B1 (en) 2006-01-24
US7392716B2 (en) 2008-07-01

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