WO2006072021A3 - Processes for forming electronic devices and electronic devices formed by such processes - Google Patents

Processes for forming electronic devices and electronic devices formed by such processes Download PDF

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Publication number
WO2006072021A3
WO2006072021A3 PCT/US2005/047516 US2005047516W WO2006072021A3 WO 2006072021 A3 WO2006072021 A3 WO 2006072021A3 US 2005047516 W US2005047516 W US 2005047516W WO 2006072021 A3 WO2006072021 A3 WO 2006072021A3
Authority
WO
WIPO (PCT)
Prior art keywords
depositing
layer
forming
processes
electronic devices
Prior art date
Application number
PCT/US2005/047516
Other languages
French (fr)
Other versions
WO2006072021A2 (en
Inventor
Shiva Prakash
Original Assignee
Du Pont
Shiva Prakash
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont, Shiva Prakash filed Critical Du Pont
Priority to JP2007549668A priority Critical patent/JP2008527636A/en
Priority to KR1020077017544A priority patent/KR101290854B1/en
Priority to EP05855996A priority patent/EP1843903B1/en
Publication of WO2006072021A2 publication Critical patent/WO2006072021A2/en
Publication of WO2006072021A3 publication Critical patent/WO2006072021A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
    • C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes

Abstract

A process for forming an electronic device includes forming a first layer over a substrate, wherein the first layer includes an organic layer, and depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering. In another embodiment, a process for forming an electronic device includes placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece includes a substrate and an organic layer overlying the workpiece. The process includes generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece. The process also includes sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material, and depositing a layer of the material over the organic layer.
PCT/US2005/047516 2004-12-30 2005-12-30 Processes for forming electronic devices and electronic devices formed by such processes WO2006072021A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007549668A JP2008527636A (en) 2004-12-30 2005-12-30 Process for forming electronic devices and electronic devices formed by such processes
KR1020077017544A KR101290854B1 (en) 2004-12-30 2005-12-30 Processes for forming electronic devices and electronic devices formed by such processes
EP05855996A EP1843903B1 (en) 2004-12-30 2005-12-30 Processes for forming electronic devices and electronic devices formed by such processes

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US64047304P 2004-12-30 2004-12-30
US60/640,473 2004-12-30
US11/070,070 US7803254B2 (en) 2004-12-30 2005-03-02 Processes for forming electronic devices and electronic devices formed by such processes
US11/070,070 2005-03-02

Publications (2)

Publication Number Publication Date
WO2006072021A2 WO2006072021A2 (en) 2006-07-06
WO2006072021A3 true WO2006072021A3 (en) 2006-11-09

Family

ID=36615547

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/047516 WO2006072021A2 (en) 2004-12-30 2005-12-30 Processes for forming electronic devices and electronic devices formed by such processes

Country Status (5)

Country Link
US (2) US7803254B2 (en)
EP (1) EP1843903B1 (en)
JP (1) JP2008527636A (en)
KR (1) KR101290854B1 (en)
WO (1) WO2006072021A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070051622A1 (en) * 2005-09-02 2007-03-08 Applied Materials, Inc. Simultaneous ion milling and sputter deposition
EP1868255B1 (en) * 2006-06-14 2011-10-19 Novaled AG Method for surface processing in a vacuum environment
US20090020415A1 (en) * 2007-07-16 2009-01-22 Michael Gutkin "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source
JP2015503238A (en) * 2011-12-06 2015-01-29 ノヴァレッド ゲーエムベーハー Organic photovoltaic elements
KR20140019577A (en) * 2012-08-06 2014-02-17 삼성디스플레이 주식회사 Apparatus of depositing thin film and method of depositing thin film using the same

Citations (3)

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JPH07113173A (en) * 1993-10-13 1995-05-02 Hitachi Ltd Ion beam sputtering device
US5674368A (en) * 1992-09-21 1997-10-07 Nissin Electric Co., Ltd. Film forming apparatus
US20030144487A1 (en) * 2001-07-05 2003-07-31 Vladimir Grushin Photoactive lanthanide complexes with phosphine oxides, phosphine oxide-sulfides, pyridine N-oxides, and phosphine oxide-pyridine N-oxides, and devices made with such complexes

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US4356429A (en) * 1980-07-17 1982-10-26 Eastman Kodak Company Organic electroluminescent cell
US4539507A (en) * 1983-03-25 1985-09-03 Eastman Kodak Company Organic electroluminescent devices having improved power conversion efficiencies
JPS62113388A (en) * 1985-11-11 1987-05-25 新技術事業団 Manufacture of thin film device and sputtering apparatus
GB8909011D0 (en) * 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
US5128587A (en) * 1989-12-26 1992-07-07 Moltech Corporation Electroluminescent device based on organometallic membrane
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JP2793383B2 (en) * 1991-06-24 1998-09-03 出光興産株式会社 Organic electroluminescence device
JPH10125463A (en) * 1995-12-28 1998-05-15 Matsushita Electric Ind Co Ltd Organic electroluminescent element, crystal lighting system, display device, and manufacture of organic electroluminescent element
US6195142B1 (en) * 1995-12-28 2001-02-27 Matsushita Electrical Industrial Company, Ltd. Organic electroluminescence element, its manufacturing method, and display device using organic electroluminescence element
EP0946993B8 (en) * 1996-09-04 2007-09-12 Cambridge Display Technology Limited Electrode deposition for organic light-emitting devices
US6726812B1 (en) * 1997-03-04 2004-04-27 Canon Kabushiki Kaisha Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device
GB2331765A (en) * 1997-12-01 1999-06-02 Cambridge Display Tech Ltd Sputter deposition onto organic material using neon as the discharge gas
KR20010040487A (en) * 1998-02-02 2001-05-15 유니액스 코포레이션 X-Y Addressable Electric Microswitch Arrays and Sensor Matrices Employing Them
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674368A (en) * 1992-09-21 1997-10-07 Nissin Electric Co., Ltd. Film forming apparatus
JPH07113173A (en) * 1993-10-13 1995-05-02 Hitachi Ltd Ion beam sputtering device
US20030144487A1 (en) * 2001-07-05 2003-07-31 Vladimir Grushin Photoactive lanthanide complexes with phosphine oxides, phosphine oxide-sulfides, pyridine N-oxides, and phosphine oxide-pyridine N-oxides, and devices made with such complexes

Also Published As

Publication number Publication date
EP1843903B1 (en) 2012-01-18
EP1843903A2 (en) 2007-10-17
WO2006072021A2 (en) 2006-07-06
KR20070103408A (en) 2007-10-23
KR101290854B1 (en) 2013-07-29
US20110006292A1 (en) 2011-01-13
EP1843903A4 (en) 2009-08-26
JP2008527636A (en) 2008-07-24
US20060144694A1 (en) 2006-07-06
US7803254B2 (en) 2010-09-28

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