WO2006074050A3 - Electrically enhancing the confinement of plasma - Google Patents

Electrically enhancing the confinement of plasma Download PDF

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Publication number
WO2006074050A3
WO2006074050A3 PCT/US2005/047385 US2005047385W WO2006074050A3 WO 2006074050 A3 WO2006074050 A3 WO 2006074050A3 US 2005047385 W US2005047385 W US 2005047385W WO 2006074050 A3 WO2006074050 A3 WO 2006074050A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
region
outlet port
frequency
confining structure
Prior art date
Application number
PCT/US2005/047385
Other languages
French (fr)
Other versions
WO2006074050A2 (en
Inventor
Andras Kuthi
Jisoo Kim
Eric Lenz
Rajindar Dhindsa
Lumin Li
Reza Sadjadi
Original Assignee
Lam Reasearch Corp
Andras Kuthi
Jisoo Kim
Eric Lenz
Rajindar Dhindsa
Lumin Li
Reza Sadjadi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Reasearch Corp, Andras Kuthi, Jisoo Kim, Eric Lenz, Rajindar Dhindsa, Lumin Li, Reza Sadjadi filed Critical Lam Reasearch Corp
Priority to CN2005800446238A priority Critical patent/CN101088139B/en
Priority to JP2007549623A priority patent/JP5183213B2/en
Publication of WO2006074050A2 publication Critical patent/WO2006074050A2/en
Publication of WO2006074050A3 publication Critical patent/WO2006074050A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Abstract

A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
PCT/US2005/047385 2004-12-30 2005-12-29 Electrically enhancing the confinement of plasma WO2006074050A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2005800446238A CN101088139B (en) 2004-12-30 2005-12-29 Electrically enhancing the confinement of plasma
JP2007549623A JP5183213B2 (en) 2004-12-30 2005-12-29 Vacuum plasma processor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/024,978 US7632375B2 (en) 2004-12-30 2004-12-30 Electrically enhancing the confinement of plasma
US11/024,978 2004-12-30

Publications (2)

Publication Number Publication Date
WO2006074050A2 WO2006074050A2 (en) 2006-07-13
WO2006074050A3 true WO2006074050A3 (en) 2007-04-19

Family

ID=36088342

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/047385 WO2006074050A2 (en) 2004-12-30 2005-12-29 Electrically enhancing the confinement of plasma

Country Status (6)

Country Link
US (1) US7632375B2 (en)
JP (1) JP5183213B2 (en)
KR (1) KR101209536B1 (en)
CN (1) CN101088139B (en)
TW (1) TWI390584B (en)
WO (1) WO2006074050A2 (en)

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US8268116B2 (en) * 2007-06-14 2012-09-18 Lam Research Corporation Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP5197036B2 (en) * 2008-01-23 2013-05-15 株式会社ピュアロンジャパン Plasma generator
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
JP5496568B2 (en) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP5597463B2 (en) 2010-07-05 2014-10-01 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
CN104024477B (en) * 2011-11-23 2016-05-18 朗姆研究公司 Multizone gas inject upper electrode system
CN103187234B (en) * 2011-12-30 2016-03-16 中微半导体设备(上海)有限公司 A kind of adjustable constraint device for plasma processing apparatus
JP6078419B2 (en) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ Control method of plasma processing apparatus, plasma processing method and plasma processing apparatus
JP6539113B2 (en) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
CN108242380B (en) * 2016-12-27 2019-09-06 中微半导体设备(上海)股份有限公司 A kind of double-position vacuum processor uniformly vacuumized
EP3550678B1 (en) 2018-04-04 2020-02-26 Kern Technologies, LLC Folded slab waveguide laser
KR102097984B1 (en) * 2018-10-19 2020-05-26 세메스 주식회사 Apparatus and method for processing substrate
KR102098002B1 (en) * 2018-10-19 2020-04-07 세메스 주식회사 Apparatus for processing substrate
KR102256216B1 (en) * 2019-06-27 2021-05-26 세메스 주식회사 Plasma processing apparatus and method
KR102279639B1 (en) * 2019-07-09 2021-07-20 한양대학교 산학협력단 Substrate treating apparatus
CN114566415A (en) * 2020-11-27 2022-05-31 中微半导体设备(上海)股份有限公司 Plasma processing apparatus
WO2022159804A1 (en) * 2021-01-23 2022-07-28 Sheperak Thomas J Plasma gas generator
JP2022117669A (en) * 2021-02-01 2022-08-12 東京エレクトロン株式会社 Filter circuit and plasma processing device

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Also Published As

Publication number Publication date
JP2008527634A (en) 2008-07-24
KR101209536B1 (en) 2012-12-07
CN101088139A (en) 2007-12-12
KR20070089838A (en) 2007-09-03
CN101088139B (en) 2012-06-27
TWI390584B (en) 2013-03-21
JP5183213B2 (en) 2013-04-17
WO2006074050A2 (en) 2006-07-13
US7632375B2 (en) 2009-12-15
US20090165954A1 (en) 2009-07-02
TW200703410A (en) 2007-01-16

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