WO2006081023A3 - Method and apparatus for monolayer deposition (mld) - Google Patents

Method and apparatus for monolayer deposition (mld) Download PDF

Info

Publication number
WO2006081023A3
WO2006081023A3 PCT/US2005/046495 US2005046495W WO2006081023A3 WO 2006081023 A3 WO2006081023 A3 WO 2006081023A3 US 2005046495 W US2005046495 W US 2005046495W WO 2006081023 A3 WO2006081023 A3 WO 2006081023A3
Authority
WO
WIPO (PCT)
Prior art keywords
mld
monolayer deposition
processing system
method includes
dynamic model
Prior art date
Application number
PCT/US2005/046495
Other languages
French (fr)
Other versions
WO2006081023A2 (en
Inventor
Sanjeev Kaushal
Pradeep Pandey
Kenji Sugishima
Original Assignee
Tokyo Electron Ltd
Tokyo Electron America Inc
Sanjeev Kaushal
Pradeep Pandey
Kenji Sugishima
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron America Inc, Sanjeev Kaushal, Pradeep Pandey, Kenji Sugishima filed Critical Tokyo Electron Ltd
Priority to JP2007552141A priority Critical patent/JP5337376B2/en
Priority to CN2005800472641A priority patent/CN101111628B/en
Priority to KR1020147005558A priority patent/KR20140045564A/en
Publication of WO2006081023A2 publication Critical patent/WO2006081023A2/en
Publication of WO2006081023A3 publication Critical patent/WO2006081023A3/en
Priority to KR1020077019316A priority patent/KR101477297B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

An adaptive real time thermal processing system is presented that includes a multivariable controller. The method includes creating a dynamic model of the Monolayer Deposition (MLD) processing system and incorporating virtual sensors in the dynamic model. The method includes using process recipes comprising intelligent set points, dynamic models, and/or virtual sensors.
PCT/US2005/046495 2005-01-26 2005-12-21 Method and apparatus for monolayer deposition (mld) WO2006081023A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007552141A JP5337376B2 (en) 2005-01-26 2005-12-21 Monolayer deposition method and apparatus
CN2005800472641A CN101111628B (en) 2005-01-26 2005-12-21 Method and apparatus for monolayer deposition (mld)
KR1020147005558A KR20140045564A (en) 2005-01-26 2005-12-21 Method of operating monolayer deposition processing system
KR1020077019316A KR101477297B1 (en) 2005-01-26 2007-08-23 Method of operating monolayer deposition processing system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/043,199 2005-01-26
US11/043,199 US7838072B2 (en) 2005-01-26 2005-01-26 Method and apparatus for monolayer deposition (MLD)

Publications (2)

Publication Number Publication Date
WO2006081023A2 WO2006081023A2 (en) 2006-08-03
WO2006081023A3 true WO2006081023A3 (en) 2006-11-02

Family

ID=36596322

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/046495 WO2006081023A2 (en) 2005-01-26 2005-12-21 Method and apparatus for monolayer deposition (mld)

Country Status (6)

Country Link
US (1) US7838072B2 (en)
JP (1) JP5337376B2 (en)
KR (2) KR20140045564A (en)
CN (1) CN101111628B (en)
TW (1) TWI327604B (en)
WO (1) WO2006081023A2 (en)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1398831A3 (en) * 2002-09-13 2008-02-20 Shipley Co. L.L.C. Air gaps formation
JP2008053683A (en) * 2006-07-27 2008-03-06 Matsushita Electric Ind Co Ltd Insulating film forming method, semiconductor device, and substrate processing apparatus
JP4916257B2 (en) * 2006-09-06 2012-04-11 東京エレクトロン株式会社 Oxide film forming method, oxide film forming apparatus and program
US8812261B2 (en) * 2007-08-23 2014-08-19 Applied Materials, Inc. Method and apparatus to automatically create virtual sensors with templates
US8898017B2 (en) * 2008-05-05 2014-11-25 Bp Corporation North America Inc. Automated hydrocarbon reservoir pressure estimation
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US20120197446A1 (en) * 2010-12-01 2012-08-02 Glaudel Stephen P Advanced feed-forward valve-control for a mass flow controller
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
TWI595112B (en) 2012-10-23 2017-08-11 蘭姆研究公司 Sub-saturated atomic layer deposition and conformal film deposition
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
SG2013083654A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Methods for depositing films on sensitive substrates
JP2015069987A (en) * 2013-09-26 2015-04-13 株式会社日立国際電気 Substrate processing device, method of manufacturing semiconductor device, and substrate processing method
US9396443B2 (en) * 2013-12-05 2016-07-19 Tokyo Electron Limited System and method for learning and/or optimizing manufacturing processes
JP6158111B2 (en) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 Gas supply method and semiconductor manufacturing apparatus
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
KR102323248B1 (en) * 2015-03-25 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Method of forming a thin film
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
JP6023854B1 (en) * 2015-06-09 2016-11-09 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing apparatus, and program
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
JP6640781B2 (en) * 2017-03-23 2020-02-05 キオクシア株式会社 Semiconductor manufacturing equipment
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
CN107574427A (en) * 2017-09-14 2018-01-12 德淮半导体有限公司 Apparatus and method for chemical vapor deposition processes
WO2019226252A1 (en) * 2018-05-24 2019-11-28 Applied Materials, Inc. Virtual sensor for spatially resolved wafer temperature control
JP2022077278A (en) * 2020-11-11 2022-05-23 株式会社堀場エステック Concentration control system, concentration control method, and program for concentration control system
US11586789B2 (en) * 2021-04-07 2023-02-21 Applied Materials, Inc. Machine learning based smart process recipe builder to improve azimuthal flow and thickness uniformity
US20230212742A1 (en) * 2022-01-04 2023-07-06 Applied Materials, Inc. Model-based purge gas flow

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020018849A1 (en) * 2000-06-29 2002-02-14 George Steven M. Method for forming SIO2 by chemical vapor deposition at room temperature
US6669782B1 (en) * 2000-11-15 2003-12-30 Randhir P. S. Thakur Method and apparatus to control the formation of layers useful in integrated circuits
US20040038525A1 (en) * 2002-08-26 2004-02-26 Shuang Meng Enhanced atomic layer deposition
EP1422743A1 (en) * 2001-08-28 2004-05-26 Tokyo Electron Limited Treatment system
US20040110348A1 (en) * 2002-12-04 2004-06-10 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
WO2005003406A2 (en) * 2003-06-27 2005-01-13 Sundew Technologies, Llc Apparatus and method for chemical source vapor pressure control

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661323A (en) * 1992-08-04 1994-03-04 Hitachi Ltd Method and apparatus for heat-treating semiconductor, and method of evaluating semiconductor
US5642296A (en) 1993-07-29 1997-06-24 Texas Instruments Incorporated Method of diagnosing malfunctions in semiconductor manufacturing equipment
US5443315A (en) 1993-12-16 1995-08-22 Texas Instruments Incorporated Multi-zone real-time emissivity correction system
KR100318619B1 (en) 1996-08-29 2002-02-19 아끼구사 나오유끼 Method and device for diagnosing facility failure and recording medium storing program for making computer execute process following the method
US5895596A (en) * 1997-01-27 1999-04-20 Semitool Thermal Model based temperature controller for semiconductor thermal processors
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US5970313A (en) 1997-12-19 1999-10-19 Advanced Micro Devices, Inc. Monitoring wafer temperature during thermal processing of wafers by measuring sheet resistance of a test wafer
KR20010071235A (en) 1998-05-11 2001-07-28 세미툴 인코포레이티드 Temperature control system for a thermal reactor
US6195621B1 (en) 1999-02-09 2001-02-27 Roger L. Bottomfield Non-invasive system and method for diagnosing potential malfunctions of semiconductor equipment components
KR100363088B1 (en) * 2000-04-20 2002-12-02 삼성전자 주식회사 Method of manufacturing barrier metal layer using atomic layer deposition method
JP4493192B2 (en) 2000-09-13 2010-06-30 東京エレクトロン株式会社 Batch heat treatment apparatus and control method thereof
US6913938B2 (en) * 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US6656835B2 (en) * 2001-06-21 2003-12-02 Micron Technology, Inc. Process for low temperature atomic layer deposition of Rh
JP2005531927A (en) 2002-06-28 2005-10-20 東京エレクトロン株式会社 Method and system for predicting processing performance using material processing tools and sensor data
JP2004247332A (en) * 2003-02-10 2004-09-02 Univ Kanazawa Film forming method and equipment
JP4268429B2 (en) * 2003-03-17 2009-05-27 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
US7444572B2 (en) 2005-09-01 2008-10-28 Tokyo Electron Limited Built-in self test for a thermal processing system
US7165011B1 (en) 2005-09-01 2007-01-16 Tokyo Electron Limited Built-in self test for a thermal processing system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020018849A1 (en) * 2000-06-29 2002-02-14 George Steven M. Method for forming SIO2 by chemical vapor deposition at room temperature
US6669782B1 (en) * 2000-11-15 2003-12-30 Randhir P. S. Thakur Method and apparatus to control the formation of layers useful in integrated circuits
EP1422743A1 (en) * 2001-08-28 2004-05-26 Tokyo Electron Limited Treatment system
US20040038525A1 (en) * 2002-08-26 2004-02-26 Shuang Meng Enhanced atomic layer deposition
US20040110348A1 (en) * 2002-12-04 2004-06-10 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
WO2005003406A2 (en) * 2003-06-27 2005-01-13 Sundew Technologies, Llc Apparatus and method for chemical source vapor pressure control

Also Published As

Publication number Publication date
KR101477297B1 (en) 2014-12-29
US20060165890A1 (en) 2006-07-27
KR20140045564A (en) 2014-04-16
JP2008529277A (en) 2008-07-31
KR20070096045A (en) 2007-10-01
CN101111628A (en) 2008-01-23
JP5337376B2 (en) 2013-11-06
TWI327604B (en) 2010-07-21
US7838072B2 (en) 2010-11-23
WO2006081023A2 (en) 2006-08-03
TW200632132A (en) 2006-09-16
CN101111628B (en) 2012-05-23

Similar Documents

Publication Publication Date Title
WO2006081023A3 (en) Method and apparatus for monolayer deposition (mld)
TW200710949A (en) Method and apparatus for monolayer deposition (MLD)
WO2005076075A3 (en) Adaptive real time control of a reticle/mask system
WO2008039741A3 (en) System and method for project process and workflow optimization
WO2002003150A3 (en) Multi-variable matrix process control
WO2007046945A3 (en) Product-related feedback for process control
WO2000070531A3 (en) Methods and apparatus for control configuration
WO2006096726A8 (en) Controlling a computer-aided process
WO2006071716A3 (en) Bioreactor process control system and method
WO2006124471A3 (en) Distributed database in an industrial automation environment
WO2007131011A3 (en) Apparatus and method for coordinating controllers to control a paper machine or other machine
WO2009009551A3 (en) Method and system for process control
GB2443587A (en) Energy monitoring or control of individual vias formed during laser micromachining
WO2004032194A3 (en) Method and system for analyzing data from a plasma process
WO2004049126A3 (en) System and method for high speed control and rejection
WO2007109537A3 (en) Extracorporeal renal replacement modeling system
WO2005104186A3 (en) Method and processing system for plasma-enhanced cleaning of system components
AU2003223776A1 (en) System, method, and computer program product for online and offline interactive applications on mobile devices
WO2006132943A3 (en) Method and apparatus for controlling a component by feed-forward closed-loop controller state modification
TW200507041A (en) An auto feed-back process control method
WO2007025184A3 (en) Method and apparatus for producing synergistic biocide
WO2005034180A3 (en) System and method for on-tool semiconductor simulation
AU7978500A (en) A computer based method and system for controlling an industrial process
TWI319378B (en) Method of positioning thin flat objects in a processing machine
WO2006018741A3 (en) A method for improving efficiency of a manufacturing process such as a semiconductor fab process

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200580047264.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007552141

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020077019316

Country of ref document: KR

122 Ep: pct application non-entry in european phase

Ref document number: 05857171

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 1020147005558

Country of ref document: KR