WO2006091781B1 - Apparatus and method for enhanced critical dimension scatterometry - Google Patents
Apparatus and method for enhanced critical dimension scatterometryInfo
- Publication number
- WO2006091781B1 WO2006091781B1 PCT/US2006/006536 US2006006536W WO2006091781B1 WO 2006091781 B1 WO2006091781 B1 WO 2006091781B1 US 2006006536 W US2006006536 W US 2006006536W WO 2006091781 B1 WO2006091781 B1 WO 2006091781B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- scatterometer
- radiation
- angles
- approximately
- return radiation
- Prior art date
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
- G01N21/274—Calibration, base line adjustment, drift correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Abstract
Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications. Scatterometer contains a CMOS detector without a flat, parallel cover between focal lens and CMOS chip.
Claims
AMENDED CLAIMS received by the International Bureau on 26 September 2006
12. The scatterometer of claim 11 wherein the calibration member comprises a mirror having a reflectance greater than approximately 95% and capable of reflecting radiation through a range of altitude angles of 0° to 89°, and the second reflectance is from free space.
14. The scatterometer of claim 1 wherein the first optics assembly comprises a diffuser that produces a diffuse randomized beam.
15. The scatterometer of claim 1 wherein the first optics assembly comprises an order selector configured to limit the angular range of various diffraction orders.
16. The scatterometer of claim 1 wherein the first optics assembly is configured to diffuse and randomize the beam; and the scatterometer further comprises a field stop having an aperture and an illumination lens through which the diffused and randomized beam pass.
17. The scatterometer of claim 1 wherein the object lens assembly comprises a plurality of achromatic lenses.
18. The scatterometer of claim 1 , further comprising a plurality of optical heads, wherein individual optical heads are suitable for a unique bandwidth of radiation.
19. The scatterometer of claim 1 , further comprising a reference detector configured to measure changes in the beam from the irradiation source.
20. The scatterometer of claim 1 wherein the object lens assembly is further configured to simultaneously focus the conditioned beam at the object focal plane through at least (a) a 15° range altitude angles and (b) a 90° range of azimuth angles.
38
21. The scatterometer of claim 20 wherein the altitude angles are 0° to at least 70° and the azimuth angles are 0° to at least 180°.
22. The scatterometer of claim 20 wherein the altitude angles are 0° to at least 80° and the azimuth angles are 0° to at least 360°.
23. The scatterometer of claim 1 , further comprising a polarizing beam splitter in a path of the return radiation between the object lens assembly and the detector to separate the p- and s-polarized components of the return radiation from each other.
24. The scatterometer of claim 23, further comprising a single detector to receive both the p- and s-polarized components of the return radiation, and wherein the polarizing beam splitter comprises a cube-type polarizing beam splitter.
25. A method of evaluating a microstructure on a workpiece, comprising: generating a beam having a first wavelength; irradiating a microstructure on a workpiece by passing the beam through an object lens assembly that focuses the beam to a focus area at an object focal plane, wherein the beam is focused through at least (a) a 15° range of altitude angles and (b) a 90° range of azimuth angles simultaneously; presenting return radiation scattered from a microstructure on the workpiece in a radiation distribution at a second focal plane; and detecting the radiation distribution using a CMOS imager having a die with an image sensor, focal optics, and packaging defining an enclosed compartment in which the focal optics and the image sensor are fixed with respect to each other without a cover having parallel, flat surfaces between the image sensor and the focal optics.
39
26. The method of claim 25, further comprising: polarizing the radiation distribution using a polarizing beam splitter configured to present separate images of p- and s-polarized components of the return radiation before detecting the radiation with the CMOS imager; detecting the separated images of both the p- and s-polarized components of the return radiation simultaneously on the CMOS imager; and producing a representation of the p- and s-polarized components of the return radiation.
27. The method of claim 26 wherein the polarizing beam splitter comprises a cube-type polarizing beam splitter and the method further comprises directing the p- and s-polarized components of the return radiation along parallel paths such that the p-polarized component of the return radiation impinges upon a first region of the CMOS imager and the s-polarized component of the return radiation impinges simultaneously upon a second region of the CMOS imager.
28. The method of claim 25 wherein the object lens assembly is further configured to focus the conditioned beam on the object focal plane through a range of incidence angles having (a) altitude angles of 0° to at least about 70° and (b) azimuth angles of 0° to at least about 180°.
29. The method of claim 25 wherein the altitude angles are 0° to at least 80° and the azimuth angles are 0° to at least 360°.
30. The method of claim 25 wherein the wavelength is approximately 266 nm to approximately 475 nm.
31. The method of claim 25 wherein the wavelength is approximately 375 nm to approximately 475 nm.
40
32. The method of claim 25 wherein the wavelength is approximately 457 nm.
33. The method of claim 25 wherein the wavelength is approximately 405 nm.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65671205P | 2005-02-25 | 2005-02-25 | |
US60/656,712 | 2005-02-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006091781A1 WO2006091781A1 (en) | 2006-08-31 |
WO2006091781B1 true WO2006091781B1 (en) | 2006-11-09 |
Family
ID=36440961
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/006538 WO2006091783A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006536 WO2006091781A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006775 WO2006091913A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006679 WO2006091859A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006537 WO2006091782A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006643 WO2006091840A2 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006449 WO2006093800A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2006/006538 WO2006091783A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/006775 WO2006091913A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006679 WO2006091859A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006537 WO2006091782A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006643 WO2006091840A2 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
PCT/US2006/006449 WO2006093800A1 (en) | 2005-02-25 | 2006-02-24 | Apparatus and method for enhanced critical dimension scatterometry |
Country Status (5)
Country | Link |
---|---|
US (8) | US7615752B2 (en) |
EP (1) | EP1864080B1 (en) |
AT (1) | ATE475862T1 (en) |
DE (1) | DE602006015785D1 (en) |
WO (7) | WO2006091783A1 (en) |
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2006
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US20060289789A1 (en) | 2006-12-28 |
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US20060289790A1 (en) | 2006-12-28 |
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US20060243912A1 (en) | 2006-11-02 |
WO2006091913A1 (en) | 2006-08-31 |
WO2006091840A9 (en) | 2006-12-28 |
US20060273263A1 (en) | 2006-12-07 |
EP1864080A1 (en) | 2007-12-12 |
EP1864080B1 (en) | 2010-07-28 |
US7615752B2 (en) | 2009-11-10 |
WO2006091783A1 (en) | 2006-08-31 |
WO2006091859A1 (en) | 2006-08-31 |
WO2006091840A2 (en) | 2006-08-31 |
WO2006093800A9 (en) | 2007-03-01 |
DE602006015785D1 (en) | 2010-09-09 |
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