WO2006098888A3 - Plasma oxidation and removal of oxidized material - Google Patents
Plasma oxidation and removal of oxidized material Download PDFInfo
- Publication number
- WO2006098888A3 WO2006098888A3 PCT/US2006/007401 US2006007401W WO2006098888A3 WO 2006098888 A3 WO2006098888 A3 WO 2006098888A3 US 2006007401 W US2006007401 W US 2006007401W WO 2006098888 A3 WO2006098888 A3 WO 2006098888A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive layer
- removal
- plasma oxidation
- oxidized material
- etching
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006800074117A CN101164121B (en) | 2005-03-09 | 2006-02-27 | Plasma oxidation and removal of oxidized material |
KR1020137003686A KR101376830B1 (en) | 2005-03-09 | 2006-02-27 | plasma oxidation and removal of oxidized material |
JP2008500764A JP2008536296A (en) | 2005-03-09 | 2006-02-27 | Plasma oxidation and removal of oxidized materials |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/076,725 | 2005-03-09 | ||
US11/076,725 US7540935B2 (en) | 2003-03-14 | 2005-03-09 | Plasma oxidation and removal of oxidized material |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006098888A2 WO2006098888A2 (en) | 2006-09-21 |
WO2006098888A3 true WO2006098888A3 (en) | 2007-12-21 |
Family
ID=36992195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/007401 WO2006098888A2 (en) | 2005-03-09 | 2006-02-27 | Plasma oxidation and removal of oxidized material |
Country Status (6)
Country | Link |
---|---|
US (1) | US7540935B2 (en) |
JP (1) | JP2008536296A (en) |
KR (2) | KR101376830B1 (en) |
CN (1) | CN101164121B (en) |
TW (1) | TWI310587B (en) |
WO (1) | WO2006098888A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8852383B2 (en) * | 1999-09-29 | 2014-10-07 | Materials And Technologies Corporation | Wet processing using a fluid meniscus apparatus |
KR100729933B1 (en) * | 2005-12-19 | 2007-06-18 | 동부일렉트로닉스 주식회사 | Method of monitoring depositing temperature of cu seed layer and method for forming cu layer by using the same |
JP5184644B2 (en) * | 2007-11-21 | 2013-04-17 | ラム リサーチ コーポレーション | Bevel plasma treatment to enhance wet edge cleaning |
US8414790B2 (en) * | 2008-11-13 | 2013-04-09 | Lam Research Corporation | Bevel plasma treatment to enhance wet edge clean |
US20120088370A1 (en) * | 2010-10-06 | 2012-04-12 | Lam Research Corporation | Substrate Processing System with Multiple Processing Devices Deployed in Shared Ambient Environment and Associated Methods |
CN105225976A (en) * | 2014-06-25 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | The manufacture method of pad and semiconductor device |
KR102437717B1 (en) * | 2015-06-17 | 2022-08-29 | 인텔 코포레이션 | Transition Metal Dry Etching by Atomic Layer Removal of Oxide Layers for Device Fabrication |
CN112382608A (en) * | 2020-11-04 | 2021-02-19 | 上海华力集成电路制造有限公司 | Method for manufacturing copper interconnection line |
US11557487B2 (en) * | 2021-06-04 | 2023-01-17 | Tokyo Electron Limited | Etching metal during processing of a semiconductor structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6403491B1 (en) * | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
US20040165177A1 (en) * | 2002-03-29 | 2004-08-26 | Lam Research | System and method of broad band optical end point detection for film change indication |
US20040248408A1 (en) * | 2003-03-14 | 2004-12-09 | Lam Research Corporation | System, method and apparatus for improved global dual-damascene planarization |
US7129167B1 (en) * | 2003-03-14 | 2006-10-31 | Lam Research Corporation | Methods and systems for a stress-free cleaning a surface of a substrate |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4468284A (en) * | 1983-07-06 | 1984-08-28 | Psi Star, Inc. | Process for etching an aluminum-copper alloy |
US4919750A (en) * | 1987-09-14 | 1990-04-24 | International Business Machines Corporation | Etching metal films with complexing chloride plasma |
US5098516A (en) * | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
US5561082A (en) * | 1992-07-31 | 1996-10-01 | Kabushiki Kaisha Toshiba | Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide |
JP2885616B2 (en) * | 1992-07-31 | 1999-04-26 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US5431774A (en) * | 1993-11-30 | 1995-07-11 | Texas Instruments Incorporated | Copper etching |
US6090701A (en) * | 1994-06-21 | 2000-07-18 | Kabushiki Kaisha Toshiba | Method for production of semiconductor device |
US5736002A (en) * | 1994-08-22 | 1998-04-07 | Sharp Microelectronics Technology, Inc. | Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of same |
JP3417751B2 (en) * | 1995-02-13 | 2003-06-16 | 株式会社東芝 | Method for manufacturing semiconductor device |
US6171661B1 (en) * | 1998-02-25 | 2001-01-09 | Applied Materials, Inc. | Deposition of copper with increased adhesion |
JP4307592B2 (en) * | 1998-07-07 | 2009-08-05 | Okiセミコンダクタ株式会社 | Wiring formation method in semiconductor device |
JP3892621B2 (en) * | 1999-04-19 | 2007-03-14 | 株式会社神戸製鋼所 | Method for forming wiring film |
US6355979B2 (en) * | 1999-05-25 | 2002-03-12 | Stmicroelectronics, Inc. | Hard mask for copper plasma etch |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
US20030155079A1 (en) * | 1999-11-15 | 2003-08-21 | Andrew D. Bailey | Plasma processing system with dynamic gas distribution control |
US20020072228A1 (en) * | 1999-12-15 | 2002-06-13 | Texas A&M University System | Semiconductor conductive pattern formation method |
US6613667B1 (en) | 2001-05-02 | 2003-09-02 | The Texas A&M University System | Forming an interconnect of a semiconductor device |
TW550648B (en) * | 2001-07-02 | 2003-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US6518183B1 (en) * | 2001-09-06 | 2003-02-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hillock inhibiting method for forming a passivated copper containing conductor layer |
JP4024508B2 (en) * | 2001-10-09 | 2007-12-19 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US6794245B2 (en) * | 2002-07-18 | 2004-09-21 | Micron Technology, Inc. | Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules |
JP2004193488A (en) * | 2002-12-13 | 2004-07-08 | Tosoh Corp | Polishing solution for barrier metal and polishing method |
KR100483290B1 (en) | 2002-12-14 | 2005-04-15 | 동부아남반도체 주식회사 | Method For Manufacturing Semiconductor Devices |
KR100482180B1 (en) * | 2002-12-16 | 2005-04-14 | 동부아남반도체 주식회사 | Fabricating method of semiconductor device |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US7217649B2 (en) * | 2003-03-14 | 2007-05-15 | Lam Research Corporation | System and method for stress free conductor removal |
US6821899B2 (en) * | 2003-03-14 | 2004-11-23 | Lam Research Corporation | System, method and apparatus for improved local dual-damascene planarization |
US20050287698A1 (en) * | 2004-06-28 | 2005-12-29 | Zhiyong Li | Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices |
-
2005
- 2005-03-09 US US11/076,725 patent/US7540935B2/en not_active Expired - Fee Related
-
2006
- 2006-02-27 CN CN2006800074117A patent/CN101164121B/en not_active Expired - Fee Related
- 2006-02-27 JP JP2008500764A patent/JP2008536296A/en active Pending
- 2006-02-27 KR KR1020137003686A patent/KR101376830B1/en not_active IP Right Cessation
- 2006-02-27 KR KR1020077022513A patent/KR20070112234A/en not_active Application Discontinuation
- 2006-02-27 WO PCT/US2006/007401 patent/WO2006098888A2/en active Application Filing
- 2006-03-09 TW TW095107964A patent/TWI310587B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6403491B1 (en) * | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
US20040165177A1 (en) * | 2002-03-29 | 2004-08-26 | Lam Research | System and method of broad band optical end point detection for film change indication |
US20040248408A1 (en) * | 2003-03-14 | 2004-12-09 | Lam Research Corporation | System, method and apparatus for improved global dual-damascene planarization |
US7129167B1 (en) * | 2003-03-14 | 2006-10-31 | Lam Research Corporation | Methods and systems for a stress-free cleaning a surface of a substrate |
Also Published As
Publication number | Publication date |
---|---|
CN101164121B (en) | 2011-01-26 |
US20060128152A1 (en) | 2006-06-15 |
KR101376830B1 (en) | 2014-03-20 |
WO2006098888A2 (en) | 2006-09-21 |
TW200644113A (en) | 2006-12-16 |
CN101164121A (en) | 2008-04-16 |
KR20070112234A (en) | 2007-11-22 |
JP2008536296A (en) | 2008-09-04 |
US7540935B2 (en) | 2009-06-02 |
TWI310587B (en) | 2009-06-01 |
KR20130036066A (en) | 2013-04-09 |
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