WO2006104980A3 - Laser facet passivation - Google Patents

Laser facet passivation Download PDF

Info

Publication number
WO2006104980A3
WO2006104980A3 PCT/US2006/011034 US2006011034W WO2006104980A3 WO 2006104980 A3 WO2006104980 A3 WO 2006104980A3 US 2006011034 W US2006011034 W US 2006011034W WO 2006104980 A3 WO2006104980 A3 WO 2006104980A3
Authority
WO
WIPO (PCT)
Prior art keywords
diode laser
chamber
back facets
atmosphere
laser facet
Prior art date
Application number
PCT/US2006/011034
Other languages
French (fr)
Other versions
WO2006104980A2 (en
Inventor
Greg Charache
John Hostetler
Ching-Long Jiang
Raymond J Menna
Radosveta Radionova
Robert W Roff
Holger Schlueter
Original Assignee
Trumpf Photonics Inc
Greg Charache
John Hostetler
Ching-Long Jiang
Raymond J Menna
Radosveta Radionova
Roff Robert William
Holger Schlueter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics Inc, Greg Charache, John Hostetler, Ching-Long Jiang, Raymond J Menna, Radosveta Radionova, Roff Robert William, Holger Schlueter filed Critical Trumpf Photonics Inc
Priority to JP2008503275A priority Critical patent/JP2008535224A/en
Priority to EP06739683A priority patent/EP1866955A4/en
Publication of WO2006104980A2 publication Critical patent/WO2006104980A2/en
Publication of WO2006104980A3 publication Critical patent/WO2006104980A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Abstract

Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer having a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.
PCT/US2006/011034 2005-03-25 2006-03-27 Laser facet passivation WO2006104980A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008503275A JP2008535224A (en) 2005-03-25 2006-03-27 Laser facet deactivation
EP06739683A EP1866955A4 (en) 2005-03-25 2006-03-27 Laser facet passivation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66493105P 2005-03-25 2005-03-25
US60/664,931 2005-03-25

Publications (2)

Publication Number Publication Date
WO2006104980A2 WO2006104980A2 (en) 2006-10-05
WO2006104980A3 true WO2006104980A3 (en) 2009-04-23

Family

ID=37053970

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/011034 WO2006104980A2 (en) 2005-03-25 2006-03-27 Laser facet passivation

Country Status (5)

Country Link
US (1) US7687291B2 (en)
EP (1) EP1866955A4 (en)
JP (1) JP2008535224A (en)
CN (1) CN101501816A (en)
WO (1) WO2006104980A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007011564B4 (en) * 2007-03-07 2019-08-22 Jenoptik Optical Systems Gmbh Method for improved production of diode laser bars
WO2011045797A1 (en) * 2009-10-18 2011-04-21 Technion- Research And Development Foundation Ltd. A semiconductor two-photon device
US9912118B2 (en) 2010-06-28 2018-03-06 Iulian Basarab Petrescu-Prahova Diode laser type device
US9755402B2 (en) 2010-06-28 2017-09-05 Iulian Basarab Petrescu-Prahova Edge emitter semiconductor laser type of device with end segments for mirrors protection
JP6112472B2 (en) * 2013-01-15 2017-04-12 住友電気工業株式会社 Manufacturing method of light receiving device
US9647416B2 (en) * 2013-12-23 2017-05-09 Lumentum Operations Llc Bidirectional long cavity semiconductor laser for improved power and efficiency
CN104377543B (en) * 2014-11-14 2017-09-26 西安立芯光电科技有限公司 A kind of semiconductor laser cavity mirror preparation method
US10222294B2 (en) * 2015-03-31 2019-03-05 Mellanox Technologies Silicon Photonics Inc. Wafer level testing of optical devices
CN108288816A (en) * 2018-01-12 2018-07-17 长春理工大学 A kind of semiconductor laser material passivating method
US10714900B2 (en) * 2018-06-04 2020-07-14 Ii-Vi Delaware, Inc. Ex-situ conditioning of laser facets and passivated devices formed using the same
US10505332B1 (en) 2018-06-04 2019-12-10 Ii-Vi Delaware, Inc. Ex-situ conditioning of laser facets and passivated devices formed using the same
KR20190140835A (en) * 2018-06-11 2019-12-20 서울바이오시스 주식회사 Ⅲ-ⅴcompound based light emitting diode
US10418781B1 (en) 2018-07-06 2019-09-17 Ii-Vi Delaware, Inc. Quantum well passivation structure for laser facets
CN111106528A (en) * 2019-11-28 2020-05-05 苏州长光华芯光电技术有限公司 Film coating method of semiconductor laser and semiconductor laser
CN117096723B (en) * 2023-10-20 2024-02-06 度亘核芯光电技术(苏州)有限公司 Passivation film structure and forming method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020197757A1 (en) * 2000-09-21 2002-12-26 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
US6618409B1 (en) * 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4095011A (en) * 1976-06-21 1978-06-13 Rca Corp. Electroluminescent semiconductor device with passivation layer
US4309668A (en) * 1978-02-20 1982-01-05 Nippon Electric Co., Ltd. Stripe-geometry double heterojunction laser device
JPS54115088A (en) * 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
JPS54137991A (en) * 1978-04-18 1979-10-26 Nec Corp Semiconductor laser
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
US4317086A (en) * 1979-09-13 1982-02-23 Xerox Corporation Passivation and reflector structure for electroluminescent devices
NL8104068A (en) * 1981-09-02 1983-04-05 Philips Nv SEMICONDUCTOR LASER.
US4546481A (en) * 1982-05-28 1985-10-08 Sharp Kabushiki Kaisha Window structure semiconductor laser
US4563368A (en) * 1983-02-14 1986-01-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like
JPS60242689A (en) * 1984-05-16 1985-12-02 Sharp Corp Semiconductor laser element
US4722088A (en) * 1984-09-14 1988-01-26 Siemens Aktiengesellschaft Semiconductor laser for high optical output power with reduced mirror heating
JPS61207091A (en) * 1985-03-11 1986-09-13 Sharp Corp Semiconductor laser element
US4713821A (en) * 1985-09-27 1987-12-15 The Perkin-Elmer Corporation Semiconductor laser and optical amplifier
US4744089A (en) * 1986-05-19 1988-05-10 The Perkin-Elmer Corporation Monolithic semiconductor laser and optical amplifier
US4845725A (en) * 1987-05-20 1989-07-04 Spectra Diode Laboratories, Inc. Window laser with high power reduced divergence output
US4942585A (en) * 1987-12-22 1990-07-17 Ortel Corporation High power semiconductor laser
US4856017A (en) * 1987-12-22 1989-08-08 Ortel Corporation Single frequency high power semiconductor laser
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
JP2522021B2 (en) * 1988-07-22 1996-08-07 日本電気株式会社 Semiconductor laser
JPH07101768B2 (en) * 1988-11-09 1995-11-01 三菱電機株式会社 Semiconductor laser device and manufacturing method thereof
US5144634A (en) * 1989-09-07 1992-09-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
EP0416190B1 (en) * 1989-09-07 1994-06-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
JPH03208388A (en) * 1990-01-09 1991-09-11 Nec Corp Semiconductor laser, manufacture thereof and diffusion of impurity
JPH04354117A (en) * 1991-05-31 1992-12-08 Oki Electric Ind Co Ltd Method of forming gaas crystal layer
FR2684823B1 (en) * 1991-12-04 1994-01-21 Alcatel Alsthom Cie Gle Electric SEMICONDUCTOR OPTICAL COMPONENT WITH EXTENDED OUTPUT MODE AND MANUFACTURING METHOD THEREOF.
EP0544968B1 (en) * 1991-12-05 1995-09-27 International Business Machines Corporation Semiconductor laser diode deposited on a structured substrate surface
JPH0629621A (en) * 1992-07-09 1994-02-04 Mitsubishi Electric Corp Semiconductor laser device
US5539571A (en) * 1992-09-21 1996-07-23 Sdl, Inc. Differentially pumped optical amplifer and mopa device
US5331627A (en) * 1992-11-24 1994-07-19 International Business Machines Corporation Cartridge adaptor
US5290535A (en) * 1993-04-09 1994-03-01 Imsalco Process for recycling saltcake
JPH06302906A (en) * 1993-04-12 1994-10-28 Mitsubishi Electric Corp Semiconductor laser and its manufacture
KR950004667A (en) * 1993-07-29 1995-02-18 가나이 쯔또무 Semiconductor laser device and manufacturing method
US5491711A (en) * 1993-11-04 1996-02-13 The Furukawa Electric Co., Ltd. Semiconductor laser device
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
JPH07263811A (en) * 1994-03-25 1995-10-13 Hitachi Ltd Semiconductor laser device
IT1271636B (en) * 1994-05-04 1997-06-04 Alcatel Italia METHOD FOR THE PREPARATION AND PASSIVATION OF THE HIGH-EMISSION SEMICONDUCTOR LASER TERMINAL MIRRORS AND RELATED DEVICE
WO1996034274A2 (en) * 1995-04-26 1996-10-31 Philips Electronics N.V. Method of manufacturing an x-ray optical element for an x-ray analysis apparatus
EP0776535B1 (en) 1995-06-16 2001-10-24 Uniphase Opto Holdings, Inc. Semiconductor diode laser and method of manufacturing same
EP0792531A1 (en) 1995-09-14 1997-09-03 Koninklijke Philips Electronics N.V. Semiconductor diode laser and method of manufacturing same
JPH09139550A (en) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp Manufacture of semiconductor laser device, and semiconductor laser device
US5665637A (en) * 1995-11-17 1997-09-09 Lucent Technologies Inc. Passivated faceted article comprising a semiconductor laser
JP2914430B2 (en) * 1996-01-05 1999-06-28 日本電気株式会社 Method for manufacturing semiconductor laser device
JP3428797B2 (en) * 1996-02-08 2003-07-22 古河電気工業株式会社 Semiconductor laser device
JPH09270558A (en) 1996-03-29 1997-10-14 Fuji Photo Film Co Ltd Semiconductor laser
JP2870486B2 (en) 1996-06-06 1999-03-17 日本電気株式会社 Semiconductor laser device
DE69725783T2 (en) 1996-06-17 2004-07-29 Fuji Photo Film Co., Ltd., Minami-Ashigara Semiconductor laser
US5940424A (en) 1996-06-24 1999-08-17 International Business Machines Corporation Semiconductor lasers and method for making the same
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
JPH10112566A (en) 1996-10-07 1998-04-28 Furukawa Electric Co Ltd:The Semiconductor laser
US5812580A (en) * 1996-11-05 1998-09-22 Coherent, Inc. Laser diode facet coating
US6546003B1 (en) 1996-11-21 2003-04-08 Verizon Services Corp. Telecommunications system
JPH10163563A (en) 1996-11-29 1998-06-19 Furukawa Electric Co Ltd:The Semiconductor laser
JP3387076B2 (en) 1997-01-07 2003-03-17 住友電気工業株式会社 Semiconductor laser and manufacturing method thereof
RO116694B1 (en) 1997-06-09 2001-04-30 Iulian Basarab Petrescu-Prahova Diode-like high power laser-effect device and process for making the same
EP0898345A3 (en) 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Compound semiconductor light emitting device and method of fabricating the same
US6014396A (en) 1997-09-05 2000-01-11 Sdl, Inc. Flared semiconductor optoelectronic device
KR100243417B1 (en) 1997-09-29 2000-02-01 이계철 High power semiconductor laser with ridge waveguide structure
JP3753216B2 (en) 1997-11-25 2006-03-08 富士写真フイルム株式会社 Semiconductor laser device
JP3317335B2 (en) 1998-02-10 2002-08-26 富士写真フイルム株式会社 Semiconductor laser device
US6396864B1 (en) 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
DE29816879U1 (en) 1998-09-21 1998-11-26 Trumpf Gmbh & Co Laser arrangement, preferably laser processing machine
JP3814432B2 (en) * 1998-12-04 2006-08-30 三菱化学株式会社 Compound semiconductor light emitting device
JP3778769B2 (en) * 1999-05-31 2006-05-24 シャープ株式会社 Method of stabilizing compound semiconductor surface, method of manufacturing semiconductor laser device using the same, and semiconductor device such as semiconductor laser device
US6519272B1 (en) 1999-06-30 2003-02-11 Corning Incorporated Long, high-power semiconductor laser with shifted-wave and passivated output facet
TW413958B (en) 1999-07-19 2000-12-01 Ind Tech Res Inst Semiconductor laser structure
US6375364B1 (en) 2000-01-06 2002-04-23 Corning Lasertron, Inc. Back facet flared ridge for pump laser
US6670211B2 (en) * 2000-06-08 2003-12-30 The Furukawa Electric Co., Ltd. Semiconductor laser device
JP2002141611A (en) 2000-08-24 2002-05-17 Fuji Photo Film Co Ltd Semiconductor light emitting element and its fabricating method
JP2002246590A (en) * 2001-02-21 2002-08-30 Hitachi Ltd Semiconductor device and its manufacturing method
US6782024B2 (en) 2001-05-10 2004-08-24 Bookham Technology Plc High power semiconductor laser diode
JP5019549B2 (en) * 2001-05-11 2012-09-05 古河電気工業株式会社 Semiconductor laser device manufacturing apparatus and manufacturing method
US6812152B2 (en) * 2001-08-09 2004-11-02 Comlase Ab Method to obtain contamination free laser mirrors and passivation of these
JP2003243764A (en) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd Semiconductor laser and its manufacturing method
JP4421830B2 (en) * 2003-03-26 2010-02-24 シャープ株式会社 Method for manufacturing nitride-based III-V compound semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6618409B1 (en) * 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets
US20020197757A1 (en) * 2000-09-21 2002-12-26 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers

Also Published As

Publication number Publication date
EP1866955A2 (en) 2007-12-19
US20060216842A1 (en) 2006-09-28
WO2006104980A2 (en) 2006-10-05
JP2008535224A (en) 2008-08-28
US7687291B2 (en) 2010-03-30
CN101501816A (en) 2009-08-05
EP1866955A4 (en) 2011-02-02

Similar Documents

Publication Publication Date Title
WO2006104980A3 (en) Laser facet passivation
TW200742130A (en) Improved external extraction light emitting diode based upon crystallographic faceted surfaces
WO2009099943A3 (en) Method to form a photovoltaic cell comprising a thin lamina
TW200602144A (en) Laser processing method and semiconductor chip
EP1918979A3 (en) Etching oxide with high selectivity to titanium nitride
WO2008027634A3 (en) Infrared laser wafer scribing using short pulses
TW201130196A (en) Nitride semiconductor laser diode
WO2006078492A3 (en) Method of making low-e coating using ceramic zinc inclusive target, and target used in same
WO2007091920A3 (en) A method of growing semiconductor heterostructures based on gallium nitride
TW200644051A (en) Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element
WO2006113443A3 (en) Etching technique for the fabrication of thin (ai, in, ga)n layers
WO2009041462A1 (en) Nitride-group semiconductor light-emitting element, nitride-group semiconductor laser element, nitride-group semiconductor light emitting diode, their manufacturing method, and nitride-group semiconductor layer forming method
WO2007149353A3 (en) Enhanced fungal substrate and carrier
WO2009066624A1 (en) Method for etching glass substrate
WO2006078382A3 (en) Passivating metal etch structures
WO2005029655A3 (en) Epitaxial mode-confined vertical cavity surface emitting laser (vcsel) and method of manufacturing same
WO2007048108A3 (en) Monolithically-pumped erbium-doped waveguide amplifiers and lasers
WO2010072187A3 (en) Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
WO2009072631A1 (en) Method for manufacturing nitride semiconductor element, and nitride semiconductor element
WO2006067167A3 (en) Homogeneous-beam temperature-stable semiconductor laser and method of production
ATE413710T1 (en) NITRIDE-BASED LASER DIODE AND METHOD FOR PRODUCING A NITRIDE-BASED LASER DIODE
CN102655194A (en) Method for improving light emitting efficiency of ultraviolet light emitting diode
WO2009114569A3 (en) Cooled cleaving implant
EP1333008A3 (en) Systems and methods for thermal isolation of a silicon structure
WO2006102686A3 (en) High power diode lasers

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200680018185.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2006739683

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2008503275

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU