WO2006107733A1 - Semiconductor device including a superlattice with regions defining a semiconductor junction - Google Patents
Semiconductor device including a superlattice with regions defining a semiconductor junction Download PDFInfo
- Publication number
- WO2006107733A1 WO2006107733A1 PCT/US2006/011819 US2006011819W WO2006107733A1 WO 2006107733 A1 WO2006107733 A1 WO 2006107733A1 US 2006011819 W US2006011819 W US 2006011819W WO 2006107733 A1 WO2006107733 A1 WO 2006107733A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- semiconductor device
- superlattice
- layers
- energy band
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 239000010410 layer Substances 0.000 claims abstract description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- 239000002356 single layer Substances 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 description 20
- 230000037230 mobility Effects 0.000 description 16
- 239000002800 charge carrier Substances 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000003775 Density Functional Theory Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 241001496863 Candelaria Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- 241000282887 Suidae Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002099 adlayer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 235000021438 curry Nutrition 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007734 materials engineering Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8254—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using II-VI technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002603477A CA2603477A1 (en) | 2005-04-01 | 2006-03-29 | Semiconductor device including a superlattice with regions defining a semiconductor junction |
JP2008504406A JP2008535265A (en) | 2005-04-01 | 2006-03-29 | Semiconductor device having a superlattice having a region defining a semiconductor junction |
AU2006232168A AU2006232168A1 (en) | 2005-04-01 | 2006-03-29 | Semiconductor device including a superlattice with regions defining a semiconductor junction |
EP06748992A EP1872404A1 (en) | 2005-04-01 | 2006-03-29 | Semiconductor device including a superlattice with regions defining a semiconductor junction |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/097,433 US7045813B2 (en) | 2003-06-26 | 2005-04-01 | Semiconductor device including a superlattice with regions defining a semiconductor junction |
US11/097,433 | 2005-04-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006107733A1 true WO2006107733A1 (en) | 2006-10-12 |
Family
ID=36636913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/011819 WO2006107733A1 (en) | 2005-04-01 | 2006-03-29 | Semiconductor device including a superlattice with regions defining a semiconductor junction |
Country Status (8)
Country | Link |
---|---|
US (1) | US7045813B2 (en) |
EP (1) | EP1872404A1 (en) |
JP (1) | JP2008535265A (en) |
CN (1) | CN101189727A (en) |
AU (1) | AU2006232168A1 (en) |
CA (1) | CA2603477A1 (en) |
TW (1) | TWI296441B (en) |
WO (1) | WO2006107733A1 (en) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7294848B2 (en) * | 2005-05-26 | 2007-11-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light-emitting Group IV semiconductor devices |
KR101855023B1 (en) | 2013-11-22 | 2018-05-04 | 아토메라 인코포레이티드 | Vertical semiconductor devices including superlattice punch through stop layer and related methods |
WO2015077580A1 (en) | 2013-11-22 | 2015-05-28 | Mears Technologies, Inc. | Semiconductor devices including superlattice depletion layer stack and related methods |
US9716147B2 (en) | 2014-06-09 | 2017-07-25 | Atomera Incorporated | Semiconductor devices with enhanced deterministic doping and related methods |
US9722046B2 (en) | 2014-11-25 | 2017-08-01 | Atomera Incorporated | Semiconductor device including a superlattice and replacement metal gate structure and related methods |
US9899479B2 (en) | 2015-05-15 | 2018-02-20 | Atomera Incorporated | Semiconductor devices with superlattice layers providing halo implant peak confinement and related methods |
WO2016196600A1 (en) | 2015-06-02 | 2016-12-08 | Atomera Incorporated | Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control |
US9558939B1 (en) | 2016-01-15 | 2017-01-31 | Atomera Incorporated | Methods for making a semiconductor device including atomic layer structures using N2O as an oxygen source |
US10109342B2 (en) | 2016-05-11 | 2018-10-23 | Atomera Incorporated | Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods |
US10170604B2 (en) | 2016-08-08 | 2019-01-01 | Atomera Incorporated | Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers |
US10191105B2 (en) | 2016-08-17 | 2019-01-29 | Atomera Incorporated | Method for making a semiconductor device including threshold voltage measurement circuitry |
WO2018213385A1 (en) | 2017-05-16 | 2018-11-22 | Atomera Incorporated | Semiconductor device and method including a superlattice as a gettering layer |
US10056477B1 (en) * | 2017-05-24 | 2018-08-21 | Palo Alto Research Center Incorporated | Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice emitter or collector layers |
EP3639299A1 (en) | 2017-06-13 | 2020-04-22 | Atomera Incorporated | Semiconductor device with recessed channel array transistor (rcat) including a superlattice and associated methods |
US10109479B1 (en) | 2017-07-31 | 2018-10-23 | Atomera Incorporated | Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice |
CN111247640B (en) | 2017-08-18 | 2023-11-03 | 阿托梅拉公司 | Semiconductor device and method including non-single crystal stringers adjacent to superlattice STI interfaces |
US10529757B2 (en) | 2017-12-15 | 2020-01-07 | Atomera Incorporated | CMOS image sensor including pixels with read circuitry having a superlattice |
US10608043B2 (en) | 2017-12-15 | 2020-03-31 | Atomera Incorporation | Method for making CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice |
US10529768B2 (en) | 2017-12-15 | 2020-01-07 | Atomera Incorporated | Method for making CMOS image sensor including pixels with read circuitry having a superlattice |
US10304881B1 (en) | 2017-12-15 | 2019-05-28 | Atomera Incorporated | CMOS image sensor with buried superlattice layer to reduce crosstalk |
US10461118B2 (en) | 2017-12-15 | 2019-10-29 | Atomera Incorporated | Method for making CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk |
US10615209B2 (en) | 2017-12-15 | 2020-04-07 | Atomera Incorporated | CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice |
US10608027B2 (en) | 2017-12-15 | 2020-03-31 | Atomera Incorporated | Method for making CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice |
US10355151B2 (en) | 2017-12-15 | 2019-07-16 | Atomera Incorporated | CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk |
US10276625B1 (en) | 2017-12-15 | 2019-04-30 | Atomera Incorporated | CMOS image sensor including superlattice to enhance infrared light absorption |
US10367028B2 (en) | 2017-12-15 | 2019-07-30 | Atomera Incorporated | CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice |
US10396223B2 (en) | 2017-12-15 | 2019-08-27 | Atomera Incorporated | Method for making CMOS image sensor with buried superlattice layer to reduce crosstalk |
US10361243B2 (en) | 2017-12-15 | 2019-07-23 | Atomera Incorporated | Method for making CMOS image sensor including superlattice to enhance infrared light absorption |
TWI722398B (en) | 2018-03-08 | 2021-03-21 | 美商安托梅拉公司 | Semiconductor device including enhanced contact structures having a superlattice and related methods |
US10727049B2 (en) | 2018-03-09 | 2020-07-28 | Atomera Incorporated | Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice |
US10468245B2 (en) | 2018-03-09 | 2019-11-05 | Atomera Incorporated | Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice |
CN112074959A (en) | 2018-04-12 | 2020-12-11 | 阿托梅拉公司 | Device and method for fabricating inverted T-channel field effect transistor (ITFET) including superlattice |
WO2019199923A1 (en) * | 2018-04-12 | 2019-10-17 | Atomera Incorporated | Semiconductor device and method including vertically integrated optical and electronic devices and comprising a superlattice |
US10566191B1 (en) | 2018-08-30 | 2020-02-18 | Atomera Incorporated | Semiconductor device including superlattice structures with reduced defect densities |
US10811498B2 (en) | 2018-08-30 | 2020-10-20 | Atomera Incorporated | Method for making superlattice structures with reduced defect densities |
US20200135489A1 (en) * | 2018-10-31 | 2020-04-30 | Atomera Incorporated | Method for making a semiconductor device including a superlattice having nitrogen diffused therein |
US10854717B2 (en) | 2018-11-16 | 2020-12-01 | Atomera Incorporated | Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance |
US10840335B2 (en) | 2018-11-16 | 2020-11-17 | Atomera Incorporated | Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance |
US10580867B1 (en) | 2018-11-16 | 2020-03-03 | Atomera Incorporated | FINFET including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance |
US10840337B2 (en) | 2018-11-16 | 2020-11-17 | Atomera Incorporated | Method for making a FINFET having reduced contact resistance |
US10593761B1 (en) | 2018-11-16 | 2020-03-17 | Atomera Incorporated | Method for making a semiconductor device having reduced contact resistance |
US10580866B1 (en) | 2018-11-16 | 2020-03-03 | Atomera Incorporated | Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance |
US10818755B2 (en) | 2018-11-16 | 2020-10-27 | Atomera Incorporated | Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance |
US10847618B2 (en) | 2018-11-16 | 2020-11-24 | Atomera Incorporated | Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance |
US10840336B2 (en) | 2018-11-16 | 2020-11-17 | Atomera Incorporated | Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods |
US11094818B2 (en) | 2019-04-23 | 2021-08-17 | Atomera Incorporated | Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods |
US10937888B2 (en) | 2019-07-17 | 2021-03-02 | Atomera Incorporated | Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices |
US10840388B1 (en) | 2019-07-17 | 2020-11-17 | Atomera Incorporated | Varactor with hyper-abrupt junction region including a superlattice |
US10825902B1 (en) | 2019-07-17 | 2020-11-03 | Atomera Incorporated | Varactor with hyper-abrupt junction region including spaced-apart superlattices |
US10879357B1 (en) | 2019-07-17 | 2020-12-29 | Atomera Incorporated | Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice |
US10937868B2 (en) | 2019-07-17 | 2021-03-02 | Atomera Incorporated | Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices |
US10868120B1 (en) | 2019-07-17 | 2020-12-15 | Atomera Incorporated | Method for making a varactor with hyper-abrupt junction region including a superlattice |
US11183565B2 (en) | 2019-07-17 | 2021-11-23 | Atomera Incorporated | Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods |
US10825901B1 (en) | 2019-07-17 | 2020-11-03 | Atomera Incorporated | Semiconductor devices including hyper-abrupt junction region including a superlattice |
US11437487B2 (en) * | 2020-01-14 | 2022-09-06 | Atomera Incorporated | Bipolar junction transistors including emitter-base and base-collector superlattices |
US11177351B2 (en) | 2020-02-26 | 2021-11-16 | Atomera Incorporated | Semiconductor device including a superlattice with different non-semiconductor material monolayers |
US11302823B2 (en) | 2020-02-26 | 2022-04-12 | Atomera Incorporated | Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers |
US11075078B1 (en) | 2020-03-06 | 2021-07-27 | Atomera Incorporated | Method for making a semiconductor device including a superlattice within a recessed etch |
US11569368B2 (en) | 2020-06-11 | 2023-01-31 | Atomera Incorporated | Method for making semiconductor device including a superlattice and providing reduced gate leakage |
US11469302B2 (en) | 2020-06-11 | 2022-10-11 | Atomera Incorporated | Semiconductor device including a superlattice and providing reduced gate leakage |
US11837634B2 (en) | 2020-07-02 | 2023-12-05 | Atomera Incorporated | Semiconductor device including superlattice with oxygen and carbon monolayers |
WO2022187462A1 (en) | 2021-03-03 | 2022-09-09 | Atomera Incorporated | Radio frequency (rf) semiconductor devices including a ground plane layer having a superlattice and associated methods |
US11810784B2 (en) | 2021-04-21 | 2023-11-07 | Atomera Incorporated | Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
US11923418B2 (en) | 2021-04-21 | 2024-03-05 | Atomera Incorporated | Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
US11682712B2 (en) * | 2021-05-26 | 2023-06-20 | Atomera Incorporated | Method for making semiconductor device including superlattice with O18 enriched monolayers |
US11728385B2 (en) | 2021-05-26 | 2023-08-15 | Atomera Incorporated | Semiconductor device including superlattice with O18 enriched monolayers |
US11721546B2 (en) | 2021-10-28 | 2023-08-08 | Atomera Incorporated | Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms |
US11631584B1 (en) | 2021-10-28 | 2023-04-18 | Atomera Incorporated | Method for making semiconductor device with selective etching of superlattice to define etch stop layer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0358322A2 (en) * | 1988-09-06 | 1990-03-14 | General Motors Corporation | Magnetic field sensors |
EP0996168A2 (en) * | 1998-10-23 | 2000-04-26 | Canare Electric Co., Ltd. | Field-effect transistor having a multiple quantum barrier structure |
US20040079963A1 (en) * | 2002-10-25 | 2004-04-29 | The University Of Connecticut | Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling |
WO2005013371A2 (en) * | 2003-06-26 | 2005-02-10 | Rj Mears, Llc | Semiconductor device including band-engineered superlattice |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4485128A (en) * | 1981-11-20 | 1984-11-27 | Chronar Corporation | Bandgap control in amorphous semiconductors |
JPH0656887B2 (en) * | 1982-02-03 | 1994-07-27 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
US4594603A (en) * | 1982-04-22 | 1986-06-10 | Board Of Trustees Of The University Of Illinois | Semiconductor device with disordered active region |
JPS6127681A (en) | 1984-07-17 | 1986-02-07 | Res Dev Corp Of Japan | Field effect transistor having channel part of superlattice construction |
US4882609A (en) * | 1984-11-19 | 1989-11-21 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. | Semiconductor devices with at least one monoatomic layer of doping atoms |
JPS61145820A (en) | 1984-12-20 | 1986-07-03 | Seiko Epson Corp | Semiconductor thin film material |
JPS61210679A (en) * | 1985-03-15 | 1986-09-18 | Sony Corp | Semiconductor device |
JPS61220339A (en) | 1985-03-26 | 1986-09-30 | Nippon Telegr & Teleph Corp <Ntt> | Control of characteristics of semiconductor material |
JPS62219665A (en) | 1986-03-20 | 1987-09-26 | Fujitsu Ltd | Superlattice thin-film transistor |
US4908678A (en) * | 1986-10-08 | 1990-03-13 | Semiconductor Energy Laboratory Co., Ltd. | FET with a super lattice channel |
GB2223351A (en) * | 1988-09-28 | 1990-04-04 | Philips Electronic Associated | A method of manufacturing a semiconductor device having waveguide structure |
JPH0480713A (en) * | 1990-07-23 | 1992-03-13 | Nippon Telegr & Teleph Corp <Ntt> | Superlattice optical switch |
US5081513A (en) * | 1991-02-28 | 1992-01-14 | Xerox Corporation | Electronic device with recovery layer proximate to active layer |
US5216262A (en) * | 1992-03-02 | 1993-06-01 | Raphael Tsu | Quantum well structures useful for semiconductor devices |
JPH0643482A (en) * | 1992-07-24 | 1994-02-18 | Matsushita Electric Ind Co Ltd | Space optical modulating element and its production |
US5357119A (en) * | 1993-02-19 | 1994-10-18 | Board Of Regents Of The University Of California | Field effect devices having short period superlattice structures using Si and Ge |
US5606177A (en) * | 1993-10-29 | 1997-02-25 | Texas Instruments Incorporated | Silicon oxide resonant tunneling diode structure |
US5466949A (en) * | 1994-08-04 | 1995-11-14 | Texas Instruments Incorporated | Silicon oxide germanium resonant tunneling |
US5627386A (en) * | 1994-08-11 | 1997-05-06 | The United States Of America As Represented By The Secretary Of The Army | Silicon nanostructure light-emitting diode |
US5561302A (en) * | 1994-09-26 | 1996-10-01 | Motorola, Inc. | Enhanced mobility MOSFET device and method |
US5577061A (en) * | 1994-12-16 | 1996-11-19 | Hughes Aircraft Company | Superlattice cladding layers for mid-infrared lasers |
FR2734097B1 (en) * | 1995-05-12 | 1997-06-06 | Thomson Csf | SEMICONDUCTOR LASER |
US6326650B1 (en) * | 1995-08-03 | 2001-12-04 | Jeremy Allam | Method of forming a semiconductor structure |
US6344271B1 (en) * | 1998-11-06 | 2002-02-05 | Nanoenergy Corporation | Materials and products using nanostructured non-stoichiometric substances |
EP0843361A1 (en) | 1996-11-15 | 1998-05-20 | Hitachi Europe Limited | Memory device |
JPH10173177A (en) * | 1996-12-10 | 1998-06-26 | Mitsubishi Electric Corp | Manufacture of mis transistor |
WO1998026316A1 (en) * | 1996-12-13 | 1998-06-18 | Massachusetts Institute Of Technology | Tunable microcavity using nonlinear materials in a photonic crystal |
US5994164A (en) * | 1997-03-18 | 1999-11-30 | The Penn State Research Foundation | Nanostructure tailoring of material properties using controlled crystallization |
US6255150B1 (en) * | 1997-10-23 | 2001-07-03 | Texas Instruments Incorporated | Use of crystalline SiOx barriers for Si-based resonant tunneling diodes |
US6376337B1 (en) | 1997-11-10 | 2002-04-23 | Nanodynamics, Inc. | Epitaxial SiOx barrier/insulation layer |
JP3443343B2 (en) * | 1997-12-03 | 2003-09-02 | 松下電器産業株式会社 | Semiconductor device |
JP3547037B2 (en) * | 1997-12-04 | 2004-07-28 | 株式会社リコー | Semiconductor laminated structure and semiconductor light emitting device |
US6608327B1 (en) * | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
JP3854731B2 (en) * | 1998-03-30 | 2006-12-06 | シャープ株式会社 | Microstructure manufacturing method |
US6888175B1 (en) | 1998-05-29 | 2005-05-03 | Massachusetts Institute Of Technology | Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers |
RU2142665C1 (en) * | 1998-08-10 | 1999-12-10 | Швейкин Василий Иванович | Injection laser |
US6586835B1 (en) * | 1998-08-31 | 2003-07-01 | Micron Technology, Inc. | Compact system module with built-in thermoelectric cooling |
EP1020900B1 (en) * | 1999-01-14 | 2009-08-05 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
EP1168539B1 (en) * | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitride semiconductor laser device |
GB9905196D0 (en) | 1999-03-05 | 1999-04-28 | Fujitsu Telecommunications Eur | Aperiodic gratings |
US6350993B1 (en) * | 1999-03-12 | 2002-02-26 | International Business Machines Corporation | High speed composite p-channel Si/SiGe heterostructure for field effect devices |
US6281532B1 (en) * | 1999-06-28 | 2001-08-28 | Intel Corporation | Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering |
US6570898B2 (en) | 1999-09-29 | 2003-05-27 | Xerox Corporation | Structure and method for index-guided buried heterostructure AlGalnN laser diodes |
US6501092B1 (en) * | 1999-10-25 | 2002-12-31 | Intel Corporation | Integrated semiconductor superlattice optical modulator |
RU2173003C2 (en) * | 1999-11-25 | 2001-08-27 | Септре Электроникс Лимитед | Method for producing silicon nanostructure, lattice of silicon quantum conducting tunnels, and devices built around them |
DE10025264A1 (en) * | 2000-05-22 | 2001-11-29 | Max Planck Gesellschaft | Field effect transistor based on embedded cluster structures and method for its production |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
US6521549B1 (en) | 2000-11-28 | 2003-02-18 | Lsi Logic Corporation | Method of reducing silicon oxynitride gate insulator thickness in some transistors of a hybrid integrated circuit to obtain increased differential in gate insulator thickness with other transistors of the hybrid circuit |
US20020100942A1 (en) * | 2000-12-04 | 2002-08-01 | Fitzgerald Eugene A. | CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
WO2003025984A2 (en) * | 2001-09-21 | 2003-03-27 | Amberwave Systems Corporation | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same |
US7060632B2 (en) * | 2002-03-14 | 2006-06-13 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
US7023010B2 (en) * | 2003-04-21 | 2006-04-04 | Nanodynamics, Inc. | Si/C superlattice useful for semiconductor devices |
CA2530065C (en) * | 2003-06-26 | 2011-12-20 | Rj Mears, Llc | Semiconductor device including mosfet having band-engineered superlattice |
-
2005
- 2005-04-01 US US11/097,433 patent/US7045813B2/en not_active Expired - Lifetime
-
2006
- 2006-03-29 JP JP2008504406A patent/JP2008535265A/en active Pending
- 2006-03-29 CN CNA200680016440XA patent/CN101189727A/en active Pending
- 2006-03-29 WO PCT/US2006/011819 patent/WO2006107733A1/en active Application Filing
- 2006-03-29 CA CA002603477A patent/CA2603477A1/en not_active Abandoned
- 2006-03-29 AU AU2006232168A patent/AU2006232168A1/en not_active Abandoned
- 2006-03-29 EP EP06748992A patent/EP1872404A1/en not_active Withdrawn
- 2006-03-30 TW TW095111313A patent/TWI296441B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0358322A2 (en) * | 1988-09-06 | 1990-03-14 | General Motors Corporation | Magnetic field sensors |
EP0996168A2 (en) * | 1998-10-23 | 2000-04-26 | Canare Electric Co., Ltd. | Field-effect transistor having a multiple quantum barrier structure |
US20040079963A1 (en) * | 2002-10-25 | 2004-04-29 | The University Of Connecticut | Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling |
WO2005013371A2 (en) * | 2003-06-26 | 2005-02-10 | Rj Mears, Llc | Semiconductor device including band-engineered superlattice |
Non-Patent Citations (1)
Title |
---|
LIU C R ET AL: "NOVEL AMORPHOUS SILICON DOPING SUPERLATTICE DEVICE WITH BIDIRECTIONAL S-SHAPED NEGATIVE DIFFERENTIAL CHARACTERISTICS", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 63, no. 2, 12 July 1993 (1993-07-12), pages 177 - 179, XP000382527, ISSN: 0003-6951 * |
Also Published As
Publication number | Publication date |
---|---|
TW200701452A (en) | 2007-01-01 |
CN101189727A (en) | 2008-05-28 |
US7045813B2 (en) | 2006-05-16 |
AU2006232168A2 (en) | 2008-02-21 |
US20050167653A1 (en) | 2005-08-04 |
AU2006232168A1 (en) | 2006-10-12 |
EP1872404A1 (en) | 2008-01-02 |
CA2603477A1 (en) | 2006-10-12 |
TWI296441B (en) | 2008-05-01 |
JP2008535265A (en) | 2008-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7227174B2 (en) | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction | |
US7229902B2 (en) | Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction | |
US7045813B2 (en) | Semiconductor device including a superlattice with regions defining a semiconductor junction | |
US7045377B2 (en) | Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction | |
CN106104805B (en) | Vertical semiconductor device including a superlattice punch-through stop layer stack and related methods | |
US20070197006A1 (en) | Method for making a semiconductor device comprising a lattice matching layer | |
WO2015077580A1 (en) | Semiconductor devices including superlattice depletion layer stack and related methods | |
WO2007038656A1 (en) | Semiconductor device including a front side strained superlattice layer and a back side stress layer and associated methods | |
US20210020759A1 (en) | Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices | |
US20210020749A1 (en) | Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods | |
CA2612243A1 (en) | Semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer and associated methods | |
WO2021011620A1 (en) | Semiconductor devices including hyper-abrupt junction region including a superlattice and associated methods | |
CN114258593A (en) | Semiconductor device having hyperabrupt junction regions with spaced superlattices and related methods | |
EP4000100A1 (en) | Varactor with hyper-abrupt junction region including spaced-apart superlattices and associated methods |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200680016440.X Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DPE2 | Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101) | ||
ENP | Entry into the national phase |
Ref document number: 2008504406 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2603477 Country of ref document: CA |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006232168 Country of ref document: AU Ref document number: 2006748992 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: RU |
|
ENP | Entry into the national phase |
Ref document number: 2006232168 Country of ref document: AU Date of ref document: 20060329 Kind code of ref document: A |