WO2006125192A3 - An imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell - Google Patents

An imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell Download PDF

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Publication number
WO2006125192A3
WO2006125192A3 PCT/US2006/019605 US2006019605W WO2006125192A3 WO 2006125192 A3 WO2006125192 A3 WO 2006125192A3 US 2006019605 W US2006019605 W US 2006019605W WO 2006125192 A3 WO2006125192 A3 WO 2006125192A3
Authority
WO
WIPO (PCT)
Prior art keywords
line
pixel cell
transparent conductive
interconnect line
transistor
Prior art date
Application number
PCT/US2006/019605
Other languages
French (fr)
Other versions
WO2006125192A2 (en
Inventor
David Wells
Original Assignee
Micron Technology Inc
David Wells
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, David Wells filed Critical Micron Technology Inc
Priority to EP06770758A priority Critical patent/EP1886346A2/en
Priority to JP2008512567A priority patent/JP2008541491A/en
Priority to CN2006800172196A priority patent/CN101180730B/en
Publication of WO2006125192A2 publication Critical patent/WO2006125192A2/en
Publication of WO2006125192A3 publication Critical patent/WO2006125192A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing

Abstract

The invention relates to an imaging device having a pixel cell with a transparent conductive material interconnect line for focusing incident light onto a photosensor and providing an electrical connection to pixel circuitry, and the method of making the same. The pixel cell comprises a photosensor (12a, 12b), a transfer transistor (TX), a floating diffusion (18), a reset transistor (RST), a source follower transistor (34) and a row select transistor (26, SEL). The transparent interconnect line (111) could be any interconnect line used in the pixel circuitry, for example Vaa-pix line, charge transfer line, reset control signal line, row select line or supply voltage line. The transparent conductive material is a semiconducting oxide of a material selected from the group consisting of tin, indium, zinc and cadmium.
PCT/US2006/019605 2005-05-19 2006-05-19 An imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell WO2006125192A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06770758A EP1886346A2 (en) 2005-05-19 2006-05-19 An imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell
JP2008512567A JP2008541491A (en) 2005-05-19 2006-05-19 Imaging device comprising a pixel cell having a transparent conductive coupling line and method for making the pixel cell
CN2006800172196A CN101180730B (en) 2005-05-19 2006-05-19 An imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/132,179 US7355222B2 (en) 2005-05-19 2005-05-19 Imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell
US11/132,179 2005-05-19

Publications (2)

Publication Number Publication Date
WO2006125192A2 WO2006125192A2 (en) 2006-11-23
WO2006125192A3 true WO2006125192A3 (en) 2007-02-08

Family

ID=37311374

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/019605 WO2006125192A2 (en) 2005-05-19 2006-05-19 An imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell

Country Status (7)

Country Link
US (2) US7355222B2 (en)
EP (1) EP1886346A2 (en)
JP (1) JP2008541491A (en)
KR (1) KR100970331B1 (en)
CN (1) CN101180730B (en)
TW (1) TWI312575B (en)
WO (1) WO2006125192A2 (en)

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US7642582B2 (en) * 2007-09-06 2010-01-05 International Business Machines Corporation Imagers having electrically active optical elements
US7661077B2 (en) * 2007-09-06 2010-02-09 International Business Machines Corporation Structure for imagers having electrically active optical elements
US7531373B2 (en) * 2007-09-19 2009-05-12 Micron Technology, Inc. Methods of forming a conductive interconnect in a pixel of an imager and in other integrated circuitry
US20090184638A1 (en) * 2008-01-22 2009-07-23 Micron Technology, Inc. Field emitter image sensor devices, systems, and methods
KR20090102046A (en) 2008-03-25 2009-09-30 기아자동차주식회사 Damping device for door latch assembly of automobile
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Also Published As

Publication number Publication date
WO2006125192A2 (en) 2006-11-23
EP1886346A2 (en) 2008-02-13
KR100970331B1 (en) 2010-07-15
US7355222B2 (en) 2008-04-08
US20060261342A1 (en) 2006-11-23
TWI312575B (en) 2009-07-21
KR20080027261A (en) 2008-03-26
US7829361B2 (en) 2010-11-09
CN101180730B (en) 2010-12-15
TW200713572A (en) 2007-04-01
CN101180730A (en) 2008-05-14
JP2008541491A (en) 2008-11-20
US20080143859A1 (en) 2008-06-19

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