WO2006136929A3 - High colour diamond layer - Google Patents

High colour diamond layer Download PDF

Info

Publication number
WO2006136929A3
WO2006136929A3 PCT/IB2006/001694 IB2006001694W WO2006136929A3 WO 2006136929 A3 WO2006136929 A3 WO 2006136929A3 IB 2006001694 W IB2006001694 W IB 2006001694W WO 2006136929 A3 WO2006136929 A3 WO 2006136929A3
Authority
WO
WIPO (PCT)
Prior art keywords
diamond layer
high colour
impurity atom
atom type
diamond
Prior art date
Application number
PCT/IB2006/001694
Other languages
French (fr)
Other versions
WO2006136929A2 (en
Inventor
Stephen David Williams
Daniel James Twitchen
Philip Maurice Martineau
Geoffrey Alan Scarsbrook
Ian Friel
Original Assignee
Element Six Ltd
Donald Heather June
Stephen David Williams
Daniel James Twitchen
Philip Maurice Martineau
Geoffrey Alan Scarsbrook
Ian Friel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0512728.7A external-priority patent/GB0512728D0/en
Priority to US11/917,908 priority Critical patent/US7964280B2/en
Priority to CA2607202A priority patent/CA2607202C/en
Priority to AT06755960T priority patent/ATE535630T1/en
Priority to EP06755960A priority patent/EP1920080B1/en
Priority to AU2006260656A priority patent/AU2006260656A1/en
Application filed by Element Six Ltd, Donald Heather June, Stephen David Williams, Daniel James Twitchen, Philip Maurice Martineau, Geoffrey Alan Scarsbrook, Ian Friel filed Critical Element Six Ltd
Priority to KR1020077029720A priority patent/KR101307032B1/en
Priority to JP2008517624A priority patent/JP5457028B2/en
Priority to CN2006800277003A priority patent/CN101248210B/en
Publication of WO2006136929A2 publication Critical patent/WO2006136929A2/en
Publication of WO2006136929A3 publication Critical patent/WO2006136929A3/en
Priority to IL187010A priority patent/IL187010A/en
Priority to HK08112725.9A priority patent/HK1121199A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/006—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A method of producing a CVD diamond layer having a high colour, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.
PCT/IB2006/001694 2005-06-22 2006-06-22 High colour diamond layer WO2006136929A2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
CN2006800277003A CN101248210B (en) 2005-06-22 2006-06-22 High colour diamond
CA2607202A CA2607202C (en) 2005-06-22 2006-06-22 High colour diamond layer
AT06755960T ATE535630T1 (en) 2005-06-22 2006-06-22 INTENSIVE COLORED DIAMOND
EP06755960A EP1920080B1 (en) 2005-06-22 2006-06-22 High colour diamond
AU2006260656A AU2006260656A1 (en) 2005-06-22 2006-06-22 High colour diamond layer
US11/917,908 US7964280B2 (en) 2005-06-22 2006-06-22 High colour diamond layer
KR1020077029720A KR101307032B1 (en) 2005-06-22 2006-06-22 High colour diamond layer
JP2008517624A JP5457028B2 (en) 2005-06-22 2006-06-22 High color diamond layer
IL187010A IL187010A (en) 2005-06-22 2007-10-30 High colour diamond
HK08112725.9A HK1121199A1 (en) 2005-06-22 2008-11-21 High colour diamond layer

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0512728.7 2005-06-22
GBGB0512728.7A GB0512728D0 (en) 2005-06-22 2005-06-22 High colour diamond
US69937405P 2005-07-15 2005-07-15
US60/699,374 2005-07-15

Publications (2)

Publication Number Publication Date
WO2006136929A2 WO2006136929A2 (en) 2006-12-28
WO2006136929A3 true WO2006136929A3 (en) 2007-03-15

Family

ID=36803755

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2006/001694 WO2006136929A2 (en) 2005-06-22 2006-06-22 High colour diamond layer

Country Status (11)

Country Link
US (1) US7964280B2 (en)
EP (2) EP2253733B1 (en)
JP (2) JP5457028B2 (en)
KR (1) KR101307032B1 (en)
AU (1) AU2006260656A1 (en)
CA (1) CA2607202C (en)
GB (1) GB2428690B (en)
HK (1) HK1121199A1 (en)
IL (1) IL187010A (en)
RU (2) RU2415204C2 (en)
WO (1) WO2006136929A2 (en)

Cited By (1)

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US8110041B2 (en) 2002-09-06 2012-02-07 Daniel James Twitchen Coloured diamond

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