WO2007001316A3 - Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same - Google Patents

Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same Download PDF

Info

Publication number
WO2007001316A3
WO2007001316A3 PCT/US2005/024189 US2005024189W WO2007001316A3 WO 2007001316 A3 WO2007001316 A3 WO 2007001316A3 US 2005024189 W US2005024189 W US 2005024189W WO 2007001316 A3 WO2007001316 A3 WO 2007001316A3
Authority
WO
WIPO (PCT)
Prior art keywords
schottky barrier
field effect
effect transistor
junction field
fabricating
Prior art date
Application number
PCT/US2005/024189
Other languages
French (fr)
Other versions
WO2007001316A8 (en
WO2007001316A2 (en
WO2007001316A9 (en
Inventor
Michael S Mazzola
Joseph N Merrett
Original Assignee
Semisouth Lab Inc
Univ Mississippi
Michael S Mazzola
Joseph N Merrett
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Lab Inc, Univ Mississippi, Michael S Mazzola, Joseph N Merrett filed Critical Semisouth Lab Inc
Priority to JP2007523591A priority Critical patent/JP5105476B2/en
Priority to KR1020077003004A priority patent/KR101187084B1/en
Priority to AU2005333516A priority patent/AU2005333516B2/en
Priority to CA002576960A priority patent/CA2576960A1/en
Priority to AT05858028T priority patent/ATE536635T1/en
Priority to EP05858028A priority patent/EP1779435B8/en
Publication of WO2007001316A2 publication Critical patent/WO2007001316A2/en
Publication of WO2007001316A8 publication Critical patent/WO2007001316A8/en
Publication of WO2007001316A3 publication Critical patent/WO2007001316A3/en
Publication of WO2007001316A9 publication Critical patent/WO2007001316A9/en
Priority to HK07109128.9A priority patent/HK1101257A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Abstract

A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
PCT/US2005/024189 2004-07-08 2005-07-08 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same WO2007001316A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2007523591A JP5105476B2 (en) 2004-07-08 2005-07-08 Monolithic vertical junction field effect transistor and Schottky barrier diode manufactured from silicon carbide, and manufacturing method thereof
KR1020077003004A KR101187084B1 (en) 2004-07-08 2005-07-08 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
AU2005333516A AU2005333516B2 (en) 2004-07-08 2005-07-08 Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same
CA002576960A CA2576960A1 (en) 2004-07-08 2005-07-08 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
AT05858028T ATE536635T1 (en) 2004-07-08 2005-07-08 MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE MADE OF SILICON CARBIDE AND PRODUCTION METHOD THEREOF
EP05858028A EP1779435B8 (en) 2004-07-08 2005-07-08 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
HK07109128.9A HK1101257A1 (en) 2004-07-08 2007-08-22 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58588104P 2004-07-08 2004-07-08
US60/585,881 2004-07-08

Publications (4)

Publication Number Publication Date
WO2007001316A2 WO2007001316A2 (en) 2007-01-04
WO2007001316A8 WO2007001316A8 (en) 2007-03-08
WO2007001316A3 true WO2007001316A3 (en) 2007-04-19
WO2007001316A9 WO2007001316A9 (en) 2007-05-31

Family

ID=37595552

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/024189 WO2007001316A2 (en) 2004-07-08 2005-07-08 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same

Country Status (11)

Country Link
US (2) US7294860B2 (en)
EP (1) EP1779435B8 (en)
JP (2) JP5105476B2 (en)
KR (1) KR101187084B1 (en)
CN (1) CN100565908C (en)
AT (1) ATE536635T1 (en)
AU (1) AU2005333516B2 (en)
CA (1) CA2576960A1 (en)
HK (1) HK1101257A1 (en)
NZ (1) NZ552391A (en)
WO (1) WO2007001316A2 (en)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4719472B2 (en) * 2005-01-06 2011-07-06 株式会社日立製作所 Silicon carbide static induction transistor
JP4935160B2 (en) * 2006-04-11 2012-05-23 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
US8269262B2 (en) * 2006-05-02 2012-09-18 Ss Sc Ip Llc Vertical junction field effect transistor with mesa termination and method of making the same
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US8415737B2 (en) * 2006-06-21 2013-04-09 Flextronics International Usa, Inc. Semiconductor device with a pillar region and method of forming the same
US7541640B2 (en) * 2006-06-21 2009-06-02 Flextronics International Usa, Inc. Vertical field-effect transistor and method of forming the same
US7663183B2 (en) * 2006-06-21 2010-02-16 Flextronics International Usa, Inc. Vertical field-effect transistor and method of forming the same
SE532625C2 (en) * 2007-04-11 2010-03-09 Transic Ab Semiconductor component in silicon carbide
EP2058854B1 (en) * 2007-11-07 2014-12-03 Acreo Swedish ICT AB A semiconductor device
US20090179297A1 (en) * 2008-01-16 2009-07-16 Northrop Grumman Systems Corporation Junction barrier schottky diode with highly-doped channel region and methods
US7560325B1 (en) * 2008-04-14 2009-07-14 Semisouth Laboratories, Inc. Methods of making lateral junction field effect transistors using selective epitaxial growth
US8269263B2 (en) * 2008-05-12 2012-09-18 Vishay-Siliconix High current density power field effect transistor
US20090321784A1 (en) * 2008-06-25 2009-12-31 Great Wall Semiconductor Corporation Semiconductor Device and Method of Forming Lateral Power MOSFET with Integrated Schottky Diode on Monolithic Substrate
US7974119B2 (en) 2008-07-10 2011-07-05 Seagate Technology Llc Transmission gate-based spin-transfer torque memory unit
US8120072B2 (en) 2008-07-24 2012-02-21 Micron Technology, Inc. JFET devices with increased barrier height and methods of making same
US8232585B2 (en) 2008-07-24 2012-07-31 Micron Technology, Inc. JFET devices with PIN gate stacks
JP5326405B2 (en) * 2008-07-30 2013-10-30 株式会社デンソー Wide band gap semiconductor device
US9030867B2 (en) 2008-10-20 2015-05-12 Seagate Technology Llc Bipolar CMOS select device for resistive sense memory
US7936580B2 (en) 2008-10-20 2011-05-03 Seagate Technology Llc MRAM diode array and access method
US7936583B2 (en) 2008-10-30 2011-05-03 Seagate Technology Llc Variable resistive memory punchthrough access method
KR20110099006A (en) 2008-11-05 2011-09-05 세미사우스 래보러토리즈, 인크. Vertical junction field effect transistors having sloped sidewalls and method of making
US7825478B2 (en) 2008-11-07 2010-11-02 Seagate Technology Llc Polarity dependent switch for resistive sense memory
US8178864B2 (en) 2008-11-18 2012-05-15 Seagate Technology Llc Asymmetric barrier diode
US8203869B2 (en) 2008-12-02 2012-06-19 Seagate Technology Llc Bit line charge accumulation sensing for resistive changing memory
US8481372B2 (en) 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same
US8278691B2 (en) 2008-12-11 2012-10-02 Micron Technology, Inc. Low power memory device with JFET device structures
US7915704B2 (en) * 2009-01-26 2011-03-29 Freescale Semiconductor, Inc. Schottky diode
CN101847635B (en) * 2009-03-27 2012-03-21 立锜科技股份有限公司 Integrated element of junction transistor and Schottky diode
AU2010262784A1 (en) * 2009-06-19 2012-02-02 Power Integrations, Inc. Vertical junction field effect transistors and diodes having graded doped regions and methods of making
US8338255B2 (en) 2009-06-19 2012-12-25 Ss Sc Ip, Llc Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation
US8159856B2 (en) 2009-07-07 2012-04-17 Seagate Technology Llc Bipolar select device for resistive sense memory
US8158964B2 (en) 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
WO2011025973A1 (en) * 2009-08-28 2011-03-03 Microsemi Corporation Silicon carbide dual-mesa static induction transistor
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
JP2013530527A (en) 2010-05-25 2013-07-25 エスエス エスシー アイピー、エルエルシー Self-aligned semiconductor device with reduced gate-source leakage under reverse bias and fabrication method
IT1401754B1 (en) 2010-08-30 2013-08-02 St Microelectronics Srl INTEGRATED ELECTRONIC DEVICE AND ITS MANUFACTURING METHOD.
IT1401755B1 (en) 2010-08-30 2013-08-02 St Microelectronics Srl INTEGRATED ELECTRONIC DEVICE WITH VERTICAL CONDUCTION AND ITS MANUFACTURING METHOD.
IT1401756B1 (en) * 2010-08-30 2013-08-02 St Microelectronics Srl INTEGRATED ELECTRONIC DEVICE WITH ON-BOARD TERMINATION STRUCTURE AND ITS MANUFACTURING METHOD.
JP2012124268A (en) * 2010-12-07 2012-06-28 Nippon Inter Electronics Corp Semiconductor device
US8648426B2 (en) 2010-12-17 2014-02-11 Seagate Technology Llc Tunneling transistors
US8519410B1 (en) 2010-12-20 2013-08-27 Microsemi Corporation Silicon carbide vertical-sidewall dual-mesa static induction transistor
US8664048B2 (en) 2010-12-28 2014-03-04 Northrop Grummen Systems Corporation Semiconductor devices with minimized current flow differences and methods of same
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US8513083B2 (en) 2011-08-26 2013-08-20 Globalfoundries Inc. Methods of forming an anode and a cathode of a substrate diode by performing angled ion implantation processes
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8749015B2 (en) 2011-11-17 2014-06-10 Avogy, Inc. Method and system for fabricating floating guard rings in GaN materials
US9224828B2 (en) * 2011-10-11 2015-12-29 Avogy, Inc. Method and system for floating guard rings in gallium nitride materials
US8871600B2 (en) 2011-11-11 2014-10-28 International Business Machines Corporation Schottky barrier diodes with a guard ring formed by selective epitaxy
KR101499835B1 (en) * 2012-11-30 2015-03-10 (주)페가테크 Current Regulative Diode Device And Manufacturing Method Thereof, Cell Type Array Device Of Current Regulative
TWI521718B (en) 2012-12-20 2016-02-11 財團法人工業技術研究院 Integrated device including junction barrier schottky diode embedded in mosfet cell array
JP2014187086A (en) * 2013-03-22 2014-10-02 Toshiba Corp Semiconductor device
JP6271197B2 (en) * 2013-09-20 2018-01-31 株式会社東芝 Semiconductor device and manufacturing method thereof
US9148139B2 (en) * 2014-01-13 2015-09-29 United Silicon Carbide, Inc. Monolithically integrated cascode switches
KR101786664B1 (en) 2015-12-11 2017-10-18 현대자동차 주식회사 Semiconductor device and method manufacturing the same
KR101896332B1 (en) 2016-12-13 2018-09-07 현대자동차 주식회사 Semiconductor device and method manufacturing the same
CN107946352B (en) * 2017-09-20 2023-10-24 重庆中科渝芯电子有限公司 Ohmic contact and Schottky contact super barrier rectifier and manufacturing method thereof
US10276667B1 (en) * 2018-05-31 2019-04-30 Silanna Asia Pte Ltd High voltage breakdown tapered vertical conduction junction transistor
CN111081754A (en) * 2018-10-19 2020-04-28 宁波比亚迪半导体有限公司 Groove type MOS structure Schottky diode and preparation method thereof
CN111199972B (en) * 2018-11-16 2023-05-16 比亚迪半导体股份有限公司 Integrated cascade device and preparation method thereof
US11031472B2 (en) 2018-12-28 2021-06-08 General Electric Company Systems and methods for integrated diode field-effect transistor semiconductor devices
CN109509706B (en) * 2018-12-29 2023-05-02 重庆伟特森电子科技有限公司 Preparation method of silicon carbide diode and silicon carbide diode
CN110998861B (en) * 2019-10-18 2022-03-22 香港应用科技研究院有限公司 Power transistor and method of manufacturing the same
CN111129155A (en) * 2019-12-25 2020-05-08 重庆伟特森电子科技有限公司 Preparation method of low-gate-drain capacitance silicon carbide DI-MOSFET
CN111293176B (en) * 2020-02-25 2021-04-20 电子科技大学 GaN longitudinal reverse conducting junction field effect transistor
CN111341850A (en) * 2020-03-16 2020-06-26 电子科技大学 GaN longitudinal reverse conducting junction field effect transistor
CN111599856B (en) * 2020-05-27 2022-06-21 南京大学 Double-channel enhanced quasi-vertical structure GaN-based JFET and preparation method thereof
CN111933711B (en) * 2020-08-18 2022-08-23 电子科技大学 SBD integrated super-junction MOSFET
CN112420694B (en) * 2020-11-06 2023-06-23 电子科技大学 Reversible conduction silicon carbide JFET power device integrated with reverse Schottky freewheel diode
WO2024064146A1 (en) * 2022-09-21 2024-03-28 Schottky Lsi, Inc. Front-end-of-line (feol) and middle-of-line (mol) of planar scmos fabrication processes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
US5550397A (en) * 1993-02-16 1996-08-27 Lucent Technologies Inc. Metal oxide semiconductor transistors having a polysilicon gate electrode with nonuniform doping in source-drain direction
US20030042538A1 (en) * 2001-08-29 2003-03-06 Rajesh Kumar Silicon carbide power device having protective diode and method for manufacturing silicon carbide power device having protective diode
US6624082B2 (en) * 1998-07-13 2003-09-23 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US550397A (en) * 1895-11-26 Head-clamp for banjos
US4969027A (en) * 1988-07-18 1990-11-06 General Electric Company Power bipolar transistor device with integral antisaturation diode
US4967243A (en) * 1988-07-19 1990-10-30 General Electric Company Power transistor structure with high speed integral antiparallel Schottky diode
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
US5264713A (en) * 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US6097046A (en) * 1993-04-30 2000-08-01 Texas Instruments Incorporated Vertical field effect transistor and diode
JPH10341025A (en) * 1997-06-06 1998-12-22 Toyota Central Res & Dev Lab Inc Vertical junction type field effect transistor
EP0992067A1 (en) * 1997-06-09 2000-04-12 Siemens Aktiengesellschaft Power converter and the use thereof
DE19925233A1 (en) * 1998-06-08 1999-12-09 Siemens Ag Semiconductor structure, e.g. a Schottky diode, p-n diode or MOSFET, has low contact resistance, temperature stable ohmic contacts
EP1204145B1 (en) * 2000-10-23 2011-12-28 Panasonic Corporation Semiconductor element
JP5020436B2 (en) * 2001-03-09 2012-09-05 新日本製鐵株式会社 Field effect transistor
EP1428248B1 (en) * 2001-07-12 2011-11-23 Mississippi State University Method of making transistor topologies in silicon carbide through the use of selective epitaxy
JP2003068760A (en) * 2001-08-29 2003-03-07 Denso Corp Silicon carbide semiconductor device and manufacturing method thereof
US6841812B2 (en) * 2001-11-09 2005-01-11 United Silicon Carbide, Inc. Double-gated vertical junction field effect power transistor
DE10161139B4 (en) * 2001-12-12 2004-07-15 Siced Electronics Development Gmbh & Co. Kg Semiconductor structure with Schottky diode for reverse operation
US6693308B2 (en) * 2002-02-22 2004-02-17 Semisouth Laboratories, Llc Power SiC devices having raised guard rings
JP4153811B2 (en) * 2002-03-25 2008-09-24 株式会社東芝 High breakdown voltage semiconductor device and manufacturing method thereof
US6855970B2 (en) * 2002-03-25 2005-02-15 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor device
JP2004134547A (en) * 2002-10-10 2004-04-30 Hitachi Ltd Semiconductor device
KR20050084685A (en) * 2002-11-25 2005-08-26 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same
US7199442B2 (en) * 2004-07-15 2007-04-03 Fairchild Semiconductor Corporation Schottky diode structure to reduce capacitance and switching losses and method of making same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
US5550397A (en) * 1993-02-16 1996-08-27 Lucent Technologies Inc. Metal oxide semiconductor transistors having a polysilicon gate electrode with nonuniform doping in source-drain direction
US6624082B2 (en) * 1998-07-13 2003-09-23 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US20030042538A1 (en) * 2001-08-29 2003-03-06 Rajesh Kumar Silicon carbide power device having protective diode and method for manufacturing silicon carbide power device having protective diode

Also Published As

Publication number Publication date
US7416929B2 (en) 2008-08-26
US20080003731A1 (en) 2008-01-03
KR101187084B1 (en) 2012-09-28
CN101103464A (en) 2008-01-09
EP1779435B1 (en) 2011-12-07
AU2005333516A8 (en) 2008-09-25
AU2005333516A1 (en) 2007-02-15
US7294860B2 (en) 2007-11-13
JP5105476B2 (en) 2012-12-26
EP1779435A2 (en) 2007-05-02
WO2007001316A8 (en) 2007-03-08
AU2005333516B2 (en) 2011-04-21
EP1779435B8 (en) 2012-03-07
CA2576960A1 (en) 2007-01-04
NZ552391A (en) 2010-04-30
HK1101257A1 (en) 2007-10-12
WO2007001316A2 (en) 2007-01-04
US20060011924A1 (en) 2006-01-19
JP2013008996A (en) 2013-01-10
WO2007001316A9 (en) 2007-05-31
KR20070062969A (en) 2007-06-18
EP1779435A4 (en) 2007-10-24
CN100565908C (en) 2009-12-02
JP2008506274A (en) 2008-02-28
ATE536635T1 (en) 2011-12-15

Similar Documents

Publication Publication Date Title
WO2007001316A3 (en) Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
WO2004097944A3 (en) Silicon carbide mosfets with integrated antiparallel junction barrier schottky free wheeling diodes and methods of fabricating same
US10950719B2 (en) Seminconductor device with spreading layer
Chen et al. Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT
Deboy et al. Si, SiC and GaN power devices: An unbiased view on key performance indicators
US9087704B2 (en) Semiconductor devices and methods of manufacturing the semiconductor device
US8269263B2 (en) High current density power field effect transistor
ATE375008T1 (en) FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD
WO2004066397A3 (en) Rugged fred and fabrication
WO2007018578A3 (en) Vertical-channel junction fets having buried gates
US20150084063A1 (en) Semiconductor device with a current spreading layer
US20150116031A1 (en) Semiconductor Device and Integrated Apparatus Comprising the same
US10121907B2 (en) Planar triple-implanted JFET
Ren et al. A novel 700 V monolithically integrated Si-GaN cascoded field effect transistor
Chen et al. Decoupling of forward and reverse turn-on threshold voltages in Schottky-type p-GaN gate HEMTs
WO2019085752A1 (en) Power mosfet device
Ritenour et al. Performance of 15 mm2 1200 V normally-off SiC VJFETs with 120 A saturation current
WO2011056391A3 (en) High-drive current mosfet
Lyu et al. GaN on engineered bulk silicon power integration platform with avalanche capability enabled by built-in Si PN junctions
Wei et al. GaN power integration technology and its future prospects
CN102970019B (en) Solid relay of single chip integrated power semiconductor device
Björk et al. 1200V SiC JFET in Cascode Light configuration: comparison versus Si and SiC based switches
Häberlen et al. 95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses
KR102241012B1 (en) Diode embedded semiconductor device
CN105977301A (en) Internal gate type MOS

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2007523591

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 552391

Country of ref document: NZ

WWE Wipo information: entry into national phase

Ref document number: 2576960

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 200580023029.0

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Ref document number: DE

WWE Wipo information: entry into national phase

Ref document number: 2005858028

Country of ref document: EP

Ref document number: 2005333516

Country of ref document: AU

WWE Wipo information: entry into national phase

Ref document number: 1020077003004

Country of ref document: KR

ENP Entry into the national phase

Ref document number: 2005333516

Country of ref document: AU

Date of ref document: 20050708

Kind code of ref document: A

WWP Wipo information: published in national office

Ref document number: 2005333516

Country of ref document: AU

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 2005858028

Country of ref document: EP