WO2007001848A3 - High refractive index fluids with low absorption for immersion lithography - Google Patents
High refractive index fluids with low absorption for immersion lithography Download PDFInfo
- Publication number
- WO2007001848A3 WO2007001848A3 PCT/US2006/023081 US2006023081W WO2007001848A3 WO 2007001848 A3 WO2007001848 A3 WO 2007001848A3 US 2006023081 W US2006023081 W US 2006023081W WO 2007001848 A3 WO2007001848 A3 WO 2007001848A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- immersion lithography
- refractive index
- high refractive
- low absorption
- solvent
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Abstract
An immersion lithography fluid, including a solvent, and at least one additive soluble in the solvent, in which the immersion lithography fluid has a refractive index greater than the refractive index of the solvent at a selected wavelength and the immersion lithography fluid is acceptable for use in immersion lithography. In one embodiment, the immersion lithography fluid includes an ionic liquid. In one embodiment, an immersion lithography system including an optical surface, a wafer support for holding a workpiece, and the immersion lithography fluid disposed between the optical surface and the workpiece and contacting at least a portion of the optical surface.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69374805P | 2005-06-24 | 2005-06-24 | |
US60/693,748 | 2005-06-24 | ||
US73591205P | 2005-11-10 | 2005-11-10 | |
US60/735,912 | 2005-11-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007001848A2 WO2007001848A2 (en) | 2007-01-04 |
WO2007001848A3 true WO2007001848A3 (en) | 2007-06-28 |
Family
ID=37309341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/023081 WO2007001848A2 (en) | 2005-06-24 | 2006-06-13 | High refractive index fluids with low absorption for immersion lithography |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2007001848A2 (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2051940C1 (en) * | 1993-06-22 | 1996-01-10 | Производственное объединение "Новосибирский приборостроительный завод" | Immersion liquid |
US20050042554A1 (en) * | 2003-07-28 | 2005-02-24 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
WO2005050324A2 (en) * | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
WO2005062351A1 (en) * | 2003-12-19 | 2005-07-07 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
EP1557721A2 (en) * | 2004-01-23 | 2005-07-27 | Air Products And Chemicals, Inc. | Immersion lithography fluids |
WO2005074606A2 (en) * | 2004-02-03 | 2005-08-18 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
EP1610180A2 (en) * | 2004-06-09 | 2005-12-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
WO2006003373A2 (en) * | 2004-07-01 | 2006-01-12 | The Boc Group Plc | Immersion photolithography system |
-
2006
- 2006-06-13 WO PCT/US2006/023081 patent/WO2007001848A2/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2051940C1 (en) * | 1993-06-22 | 1996-01-10 | Производственное объединение "Новосибирский приборостроительный завод" | Immersion liquid |
US20050042554A1 (en) * | 2003-07-28 | 2005-02-24 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
WO2005050324A2 (en) * | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
WO2005062351A1 (en) * | 2003-12-19 | 2005-07-07 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
EP1557721A2 (en) * | 2004-01-23 | 2005-07-27 | Air Products And Chemicals, Inc. | Immersion lithography fluids |
WO2005074606A2 (en) * | 2004-02-03 | 2005-08-18 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
EP1610180A2 (en) * | 2004-06-09 | 2005-12-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
WO2006003373A2 (en) * | 2004-07-01 | 2006-01-12 | The Boc Group Plc | Immersion photolithography system |
Also Published As
Publication number | Publication date |
---|---|
WO2007001848A2 (en) | 2007-01-04 |
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