WO2007002370A3 - Media for writing highly resolved domains - Google Patents

Media for writing highly resolved domains Download PDF

Info

Publication number
WO2007002370A3
WO2007002370A3 PCT/US2006/024436 US2006024436W WO2007002370A3 WO 2007002370 A3 WO2007002370 A3 WO 2007002370A3 US 2006024436 W US2006024436 W US 2006024436W WO 2007002370 A3 WO2007002370 A3 WO 2007002370A3
Authority
WO
WIPO (PCT)
Prior art keywords
overcoat
media
phase change
current
change material
Prior art date
Application number
PCT/US2006/024436
Other languages
French (fr)
Other versions
WO2007002370A2 (en
Inventor
Yevgeny Vasilievich Anoikin
Donald Edward Adams
Zhaohui Fan
Original Assignee
Nanochip Inc
Yevgeny Vasilievich Anoikin
Donald Edward Adams
Zhaohui Fan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/177,550 external-priority patent/US20070041237A1/en
Application filed by Nanochip Inc, Yevgeny Vasilievich Anoikin, Donald Edward Adams, Zhaohui Fan filed Critical Nanochip Inc
Priority to EP06785407A priority Critical patent/EP1899976A4/en
Priority to JP2008518420A priority patent/JP2009501435A/en
Publication of WO2007002370A2 publication Critical patent/WO2007002370A2/en
Publication of WO2007002370A3 publication Critical patent/WO2007002370A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/06—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electrical capacitance; Record carriers therefor
    • G11B9/061—Record carriers characterised by their structure or form or by the selection of the material; Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B9/063—Record carriers characterised by their structure or form or by the selection of the material; Apparatus or processes specially adapted for the manufacture of record carriers characterised by the selection of the material
    • G11B9/065—Additional layers for lubrication, wear protection or elimination of electrostatic charges of the interface between record carrier and head
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10—Digital recording or reproducing
    • G11B20/12—Formatting, e.g. arrangement of data block or words on the record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/08—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure

Abstract

Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure.
PCT/US2006/024436 2005-06-24 2006-06-23 Media for writing highly resolved domains WO2007002370A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP06785407A EP1899976A4 (en) 2005-06-24 2006-06-23 Media for writing highly resolved domains
JP2008518420A JP2009501435A (en) 2005-06-24 2006-06-23 Medium for writing highly decomposed domains

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US69395005P 2005-06-24 2005-06-24
US60/693,950 2005-06-24
US11/177,550 2005-07-08
US11/177,550 US20070041237A1 (en) 2005-07-08 2005-07-08 Media for writing highly resolved domains

Publications (2)

Publication Number Publication Date
WO2007002370A2 WO2007002370A2 (en) 2007-01-04
WO2007002370A3 true WO2007002370A3 (en) 2009-04-23

Family

ID=37595854

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/024436 WO2007002370A2 (en) 2005-06-24 2006-06-23 Media for writing highly resolved domains

Country Status (4)

Country Link
EP (1) EP1899976A4 (en)
JP (1) JP2009501435A (en)
KR (1) KR20080034895A (en)
WO (1) WO2007002370A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101416879B1 (en) 2008-10-06 2014-08-07 삼성전자주식회사 Operation method of non-volatile memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060291271A1 (en) * 2005-06-24 2006-12-28 Nanochip, Inc. High density data storage devices having servo indicia formed in a patterned media
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US7367119B2 (en) * 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938655B2 (en) * 1979-05-14 1984-09-18 日本放送協会 semiconductor disk memory device
JP2003178419A (en) * 2001-12-12 2003-06-27 Fuji Photo Film Co Ltd Recording medium
US6985377B2 (en) * 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060291271A1 (en) * 2005-06-24 2006-12-28 Nanochip, Inc. High density data storage devices having servo indicia formed in a patterned media
US7367119B2 (en) * 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1899976A4 *

Also Published As

Publication number Publication date
WO2007002370A2 (en) 2007-01-04
EP1899976A4 (en) 2009-12-16
JP2009501435A (en) 2009-01-15
KR20080034895A (en) 2008-04-22
EP1899976A2 (en) 2008-03-19

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