WO2007005618A3 - High performance organic thin film transistor - Google Patents

High performance organic thin film transistor Download PDF

Info

Publication number
WO2007005618A3
WO2007005618A3 PCT/US2006/025598 US2006025598W WO2007005618A3 WO 2007005618 A3 WO2007005618 A3 WO 2007005618A3 US 2006025598 W US2006025598 W US 2006025598W WO 2007005618 A3 WO2007005618 A3 WO 2007005618A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
thin film
film transistor
semiconducting material
organic thin
Prior art date
Application number
PCT/US2006/025598
Other languages
French (fr)
Other versions
WO2007005618A2 (en
Inventor
Yang Yang
Chih-Wei Chu
Sheng-Han Li
Original Assignee
Univ California
Yang Yang
Chih-Wei Chu
Sheng-Han Li
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Yang Yang, Chih-Wei Chu, Sheng-Han Li filed Critical Univ California
Publication of WO2007005618A2 publication Critical patent/WO2007005618A2/en
Publication of WO2007005618A3 publication Critical patent/WO2007005618A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Abstract

An organic thin film transistor has a gate electrode on which a gate insulator is formed, a layer of organic semiconducting material formed on the gate insulator and a source electrode and a drain electrode formed on the layer of organic semiconducting material. The source and/or drain electrode have a layer of transition-metal oxide formed on the organic semiconducting material and a layer of metal formed on the layer of transition-metal oxide. A method of producing an organic thin film transistor includes providing a gate electrode on which a gate insulator is formed, forming a layer of semiconducting material on the gate insulator, and forming a source electrode and a drain electrode on the layer of organic semiconducting material. Forming the source electrode and/or drain electrode include forming a layer of transition metal oxide on the organic semiconducting material and forming a layer of metal on the layer of transition- metal oxide.
PCT/US2006/025598 2005-06-30 2006-06-30 High performance organic thin film transistor WO2007005618A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69551305P 2005-06-30 2005-06-30
US60/695,513 2005-06-30

Publications (2)

Publication Number Publication Date
WO2007005618A2 WO2007005618A2 (en) 2007-01-11
WO2007005618A3 true WO2007005618A3 (en) 2007-03-22

Family

ID=37605044

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/025598 WO2007005618A2 (en) 2005-06-30 2006-06-30 High performance organic thin film transistor

Country Status (1)

Country Link
WO (1) WO2007005618A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2486202A (en) 2010-12-06 2012-06-13 Cambridge Display Tech Ltd Adhesion layer for solution-processed transition metal oxides on inert metal contacts of organic thin film transistors.
CN102222767A (en) * 2011-06-23 2011-10-19 康佳集团股份有限公司 Organic thin-film transistor
CN112635102A (en) * 2020-12-04 2021-04-09 华南理工大学 Composite conductive film, preparation method thereof and thin film transistor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155566A (en) * 1990-03-27 1992-10-13 Kabushiki Kaisha Toshiba Organic thin film element
US5946551A (en) * 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
US6180956B1 (en) * 1999-03-03 2001-01-30 International Business Machine Corp. Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
US6855949B2 (en) * 2001-10-01 2005-02-15 Koninklijke Philips Electronics N.V. Composition, method and electronic device
US6864396B2 (en) * 2001-09-27 2005-03-08 3M Innovative Properties Company Substituted pentacene semiconductors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155566A (en) * 1990-03-27 1992-10-13 Kabushiki Kaisha Toshiba Organic thin film element
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
US5946551A (en) * 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
US6180956B1 (en) * 1999-03-03 2001-01-30 International Business Machine Corp. Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
US6864396B2 (en) * 2001-09-27 2005-03-08 3M Innovative Properties Company Substituted pentacene semiconductors
US6855949B2 (en) * 2001-10-01 2005-02-15 Koninklijke Philips Electronics N.V. Composition, method and electronic device

Also Published As

Publication number Publication date
WO2007005618A2 (en) 2007-01-11

Similar Documents

Publication Publication Date Title
WO2003058723A1 (en) Organic thin-film transistor and manufacturing method thereof
TW200727492A (en) Organic thin film transistor array panel
WO2009038606A3 (en) Transparent nanowire transistors and methods for fabricating same
EP1341241A3 (en) Organic thin-film transistor and manufacturing method for the same
WO2006025609A3 (en) Thin film transistor and its manufacturing method
TW200644224A (en) Semiconductor device and method for manufacturing the same
EP1770788A3 (en) Semiconductor device having oxide semiconductor layer and manufacturing method thereof
TW200734780A (en) Display device and manufacturing method therefor
WO2005050713A3 (en) High-voltage transistors on insulator substrates
JP2007096055A5 (en)
TW200729570A (en) Transistor, organic semiconductor device, and method for manufacturing the transistor or device
TW200633074A (en) A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
TW200735371A (en) Thin film transistor substrate and thin film transistor substrate manufacturing method
WO2009088588A3 (en) Methods for fabricating pmos metal gate structures
TW200705668A (en) Thin film transistor substrate and manufacturing method thereof
WO2008099528A1 (en) Display device and method for manufacturing display device
TW200610206A (en) Organic thin film transistor and substrate including the same
TW200638548A (en) Thin film transistor array panel and manufacturing method thereof
TWI266360B (en) An integrated circuit device, microelectronic device and method of fabricating the same
TW200709430A (en) Method for forming a thin-film transistor
EP1548840A4 (en) Organic thin-film transistor and method for manufacturing organic thin-film transistor
EP1780815A3 (en) Organic thin film transistor and manufacturing method thereof
TW200711140A (en) Thin film transistor substrate and method for fabricating the same
SG147439A1 (en) Semiconductor device with doped transistor
TW200745710A (en) Organic transistor and method for manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06774356

Country of ref document: EP

Kind code of ref document: A2