WO2007005813A3 - Inorganic semiconductive films and methods therefor - Google Patents

Inorganic semiconductive films and methods therefor Download PDF

Info

Publication number
WO2007005813A3
WO2007005813A3 PCT/US2006/025953 US2006025953W WO2007005813A3 WO 2007005813 A3 WO2007005813 A3 WO 2007005813A3 US 2006025953 W US2006025953 W US 2006025953W WO 2007005813 A3 WO2007005813 A3 WO 2007005813A3
Authority
WO
WIPO (PCT)
Prior art keywords
inorganic semiconductive
methods therefor
semiconductive films
films
inorganic
Prior art date
Application number
PCT/US2006/025953
Other languages
French (fr)
Other versions
WO2007005813A2 (en
Inventor
David Punsalan
John Thompson
Original Assignee
Hewlett Packard Development Co
David Punsalan
John Thompson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co, David Punsalan, John Thompson filed Critical Hewlett Packard Development Co
Priority to EP06786206A priority Critical patent/EP1900016A2/en
Publication of WO2007005813A2 publication Critical patent/WO2007005813A2/en
Publication of WO2007005813A3 publication Critical patent/WO2007005813A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Abstract

Inorganic semiconductive films are made by depositing a suitable precursor sustance upon a substrate (S20), irradiating the precursor substance with electromagnetic radiation to form a nascent film (S30), and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film (S40).
PCT/US2006/025953 2005-07-02 2006-06-29 Inorganic semiconductive films and methods therefor WO2007005813A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06786206A EP1900016A2 (en) 2005-07-02 2006-06-29 Inorganic semiconductive films and methods therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/173,521 2005-07-02
US11/173,521 US7695998B2 (en) 2005-07-02 2005-07-02 Methods for making and using high-mobility inorganic semiconductive films

Publications (2)

Publication Number Publication Date
WO2007005813A2 WO2007005813A2 (en) 2007-01-11
WO2007005813A3 true WO2007005813A3 (en) 2007-05-03

Family

ID=37589974

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/025953 WO2007005813A2 (en) 2005-07-02 2006-06-29 Inorganic semiconductive films and methods therefor

Country Status (4)

Country Link
US (1) US7695998B2 (en)
EP (1) EP1900016A2 (en)
TW (1) TWI399810B (en)
WO (1) WO2007005813A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208401B2 (en) * 2004-03-12 2007-04-24 Hewlett-Packard Development Company, L.P. Method for forming a thin film
WO2008097117A1 (en) * 2007-02-05 2008-08-14 Universidade Nova De Lisboa ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS
JP5215158B2 (en) * 2007-12-17 2013-06-19 富士フイルム株式会社 Inorganic crystalline alignment film, method for manufacturing the same, and semiconductor device
KR101025701B1 (en) 2008-09-17 2011-03-30 연세대학교 산학협력단 Composition of oxide semiconductor ink, oxide semiconductor film using the same, and fabrication thereof
KR101669953B1 (en) * 2010-03-26 2016-11-09 삼성전자 주식회사 Oxide thin film and method of forming the oxide thin film and an electronic device including the oxide thin film
KR101420289B1 (en) 2010-04-15 2014-07-17 패컬티 오브 사이언스 앤드 테크놀로지 유니버시티 오브 뉴 리스본 Semiconductor device and method for manufacturing the same
US9053937B2 (en) 2010-04-15 2015-06-09 Electronics And Telecommunications Research Institute Semiconductor device and method of manufacturing the same
WO2011149118A1 (en) * 2010-05-24 2011-12-01 연세대학교 산학협력단 Forming method and crystallization method for an oxide semiconductor thin film using a liquid-phase process, and a method for forming semiconductor elements by using the same
JP5871263B2 (en) 2011-06-14 2016-03-01 富士フイルム株式会社 Method for producing amorphous oxide thin film
KR101920711B1 (en) 2012-01-16 2018-11-22 삼성전자주식회사 Thin film patterning method and manufacturing method of semiconductor device using the same
JP6014243B2 (en) 2012-04-16 2016-10-25 コレア エレクトロニクス テクノロジー インスティテュート Method for producing oxide thin film
US20150279671A1 (en) * 2014-03-28 2015-10-01 Industry-Academic Cooperation Foundation, Yonsei University Method for forming oxide thin film and method for fabricating oxide thin film transistor employing germanium doping
GB2528908A (en) * 2014-08-04 2016-02-10 Isis Innovation Thin film semiconductor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5630872A (en) * 1994-12-09 1997-05-20 Mitsubishi Materials Corporation Formation of thin-film patterns of a metal oxide
US20020053320A1 (en) * 1998-12-15 2002-05-09 Gregg M. Duthaler Method for printing of transistor arrays on plastic substrates
EP1324398A2 (en) * 2001-12-12 2003-07-02 National Institute of Advanced Industrial Science and Technology Metal oxide semiconductor thin film and method of producing the same
WO2004094328A1 (en) * 2003-04-17 2004-11-04 Johnson Matthey Public Limited Company Coating compositions
US20060166537A1 (en) * 2005-01-27 2006-07-27 Thompson John O Method of making a patterned metal oxide film

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2877588B2 (en) * 1991-10-28 1999-03-31 ローム株式会社 Pattern formation method of metal oxide thin film
GB9611582D0 (en) * 1996-06-04 1996-08-07 Thin Film Technology Consultan 3D printing and forming of structures
JPH10237078A (en) * 1996-10-14 1998-09-08 Dainippon Printing Co Ltd Metal complex solution, photosensitive metal complex solution and formation of metal oxide film
US5942376A (en) * 1997-08-14 1999-08-24 Symetrix Corporation Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films
CA2306384A1 (en) * 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
GB2330331B (en) 1997-10-14 2002-04-10 Patterning Technologies Ltd Method of forming a circuit element on a surface
GB2376565B (en) 1997-10-14 2003-02-05 Patterning Technologies Ltd Method of forming an electronic device
FR2775914B1 (en) * 1998-03-13 2000-04-21 Saint Gobain Vitrage METHOD FOR DEPOSITING LAYERS BASED ON METAL OXIDE (S)
JP2001282139A (en) * 2000-01-27 2001-10-12 Sharp Corp Active matrix substrate and method for manufacturing the same as well as liquid crystal display device
JP2001312222A (en) * 2000-02-25 2001-11-09 Sharp Corp Active matrix board and its manufacturing method, and display device and image pickup device using the board
AU2002359654B2 (en) * 2001-12-11 2006-08-24 The Procter & Gamble Company Process for making pre-formed objects
US7291782B2 (en) * 2002-06-22 2007-11-06 Nanosolar, Inc. Optoelectronic device and fabrication method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5630872A (en) * 1994-12-09 1997-05-20 Mitsubishi Materials Corporation Formation of thin-film patterns of a metal oxide
US20020053320A1 (en) * 1998-12-15 2002-05-09 Gregg M. Duthaler Method for printing of transistor arrays on plastic substrates
EP1324398A2 (en) * 2001-12-12 2003-07-02 National Institute of Advanced Industrial Science and Technology Metal oxide semiconductor thin film and method of producing the same
WO2004094328A1 (en) * 2003-04-17 2004-11-04 Johnson Matthey Public Limited Company Coating compositions
US20060166537A1 (en) * 2005-01-27 2006-07-27 Thompson John O Method of making a patterned metal oxide film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
OHYAMA ET AL: "Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 306, no. 1, August 1997 (1997-08-01), pages 78 - 85, XP005256761, ISSN: 0040-6090 *

Also Published As

Publication number Publication date
US20070003877A1 (en) 2007-01-04
US7695998B2 (en) 2010-04-13
EP1900016A2 (en) 2008-03-19
TWI399810B (en) 2013-06-21
WO2007005813A2 (en) 2007-01-11
TW200703511A (en) 2007-01-16

Similar Documents

Publication Publication Date Title
WO2007005813A3 (en) Inorganic semiconductive films and methods therefor
TW200721524A (en) Method of releasing high temperature films and/or devices from metallic substrates
EP1849593A4 (en) Gas-barrier film, process for producing gas-barrier film, resin base with the gas-barrier film for organic electroluminescent element, and organic electroluminescent element
WO2009130229A3 (en) An article and a method of making an article
GB0613784D0 (en) Gravure plate, method for forming light emitting layer or hole injection layer using the same, and organic light emitting device
TWI346253B (en) Antireflection film composition, patterning process and substrate using the same
WO2007127371A3 (en) Patterned microwave susceptor
WO2015116297A3 (en) Sequential processing with vapor treatment of thin films of organic-inorganic perovskite materials
WO2009076322A3 (en) Methods and devices for processing a precursor layer in a group via environment
WO2008081904A1 (en) Engraved plate and base material having conductor layer pattern using the engraved plate
WO2006015328A3 (en) Pulse thermal processing of functional materials using directed plasma arc
WO2007057664A3 (en) A method of patterning a thin film
TW200643064A (en) Transparent film and method for manufacturing the same, polarized plate and image display device
TW200746441A (en) Manufacturing method of thin film transistor and thin film transistor, and display
JP2010532559A5 (en)
WO2007051994A3 (en) Nanoparticle and nanocomposite films
EP2168933A4 (en) Oxide sinter, process for producing the same, target, and transparent conductive film and transparent conductive substrate both obtained from the target
EP2251342A4 (en) Fused ring compound, method for producing the same, polymer, organic thin film containing the compound and/or the polymer, and organic thin film device and organic thin film transistor each comprising the organic thin film
TW200730583A (en) Siloxane resin composition and the method for manufacturing the same
WO2007095171A3 (en) Absorbing film
EP1743915A4 (en) Oriented film, process for producing the same and laminate thereof
JP2009538761A5 (en)
WO2009028314A1 (en) Semiconductor device manufacturing method
TW200737589A (en) Electronic device and antenna structure thereof
GR1006042B (en) Method for making a mikroarray.

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2006786206

Country of ref document: EP