WO2007015951A2 - Semiconductor structures formed on substrates and methods of manufacturing the same - Google Patents
Semiconductor structures formed on substrates and methods of manufacturing the same Download PDFInfo
- Publication number
- WO2007015951A2 WO2007015951A2 PCT/US2006/028270 US2006028270W WO2007015951A2 WO 2007015951 A2 WO2007015951 A2 WO 2007015951A2 US 2006028270 W US2006028270 W US 2006028270W WO 2007015951 A2 WO2007015951 A2 WO 2007015951A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- doped silicon
- substrate
- etch stop
- initial substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 176
- 239000004065 semiconductor Substances 0.000 title claims abstract description 174
- 238000000034 method Methods 0.000 title claims abstract description 158
- 238000004519 manufacturing process Methods 0.000 title description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 114
- 230000008569 process Effects 0.000 claims abstract description 108
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 57
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000003486 chemical etching Methods 0.000 claims abstract description 12
- 238000002513 implantation Methods 0.000 claims abstract 2
- 239000002210 silicon-based material Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 238000012545 processing Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- -1 hydrogen ions Chemical class 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000002195 soluble material Substances 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 210000000746 body region Anatomy 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910003638 H2SiF6 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008523983A JP2009503853A (en) | 2005-07-25 | 2006-07-19 | Semiconductor structure formed on a substrate and method of manufacturing the same |
DE112006001943T DE112006001943T5 (en) | 2005-07-25 | 2006-07-19 | Semiconductor structures formed on substrates and methods for manufacturing the same |
AT0928306A AT504591A2 (en) | 2005-07-25 | 2006-07-19 | SUBSTRATE SEMICONDUCTOR SEMICONDUCTOR STRUCTURES AND METHOD FOR MANUFACTURING THEM |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/189,163 | 2005-07-25 | ||
US11/189,163 US7635637B2 (en) | 2005-07-25 | 2005-07-25 | Semiconductor structures formed on substrates and methods of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007015951A2 true WO2007015951A2 (en) | 2007-02-08 |
WO2007015951A3 WO2007015951A3 (en) | 2007-08-16 |
Family
ID=37679616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/028270 WO2007015951A2 (en) | 2005-07-25 | 2006-07-19 | Semiconductor structures formed on substrates and methods of manufacturing the same |
Country Status (8)
Country | Link |
---|---|
US (2) | US7635637B2 (en) |
JP (1) | JP2009503853A (en) |
KR (1) | KR20080042833A (en) |
CN (1) | CN101233603A (en) |
AT (1) | AT504591A2 (en) |
DE (1) | DE112006001943T5 (en) |
TW (1) | TW200710991A (en) |
WO (1) | WO2007015951A2 (en) |
Families Citing this family (21)
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US7635637B2 (en) * | 2005-07-25 | 2009-12-22 | Fairchild Semiconductor Corporation | Semiconductor structures formed on substrates and methods of manufacturing the same |
CN100474642C (en) * | 2005-10-27 | 2009-04-01 | 晶能光电(江西)有限公司 | Indium gallium aluminium nitrogen semi-conductor luminous element containing metallic chromium substrate and manufacturing method thereof |
US7768075B2 (en) * | 2006-04-06 | 2010-08-03 | Fairchild Semiconductor Corporation | Semiconductor die packages using thin dies and metal substrates |
US8101500B2 (en) * | 2007-09-27 | 2012-01-24 | Fairchild Semiconductor Corporation | Semiconductor device with (110)-oriented silicon |
US7951688B2 (en) * | 2007-10-01 | 2011-05-31 | Fairchild Semiconductor Corporation | Method and structure for dividing a substrate into individual devices |
DE102008006745B3 (en) * | 2008-01-30 | 2009-10-08 | Siltronic Ag | Method for producing a semiconductor structure |
JP2010045123A (en) * | 2008-08-11 | 2010-02-25 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same |
US8039877B2 (en) * | 2008-09-09 | 2011-10-18 | Fairchild Semiconductor Corporation | (110)-oriented p-channel trench MOSFET having high-K gate dielectric |
US8237195B2 (en) * | 2008-09-29 | 2012-08-07 | Fairchild Semiconductor Corporation | Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate |
US20110147796A1 (en) * | 2009-12-17 | 2011-06-23 | Infineon Technologies Austria Ag | Semiconductor device with metal carrier and manufacturing method |
CN102110605B (en) * | 2009-12-24 | 2012-06-06 | 北大方正集团有限公司 | Method and device for manufacturing insulated gate bipolar transistor (IGBT) chip |
US8525260B2 (en) * | 2010-03-19 | 2013-09-03 | Monolithic Power Systems, Inc. | Super junction device with deep trench and implant |
US8242013B2 (en) * | 2010-03-30 | 2012-08-14 | Alpha & Omega Semiconductor Inc. | Virtually substrate-less composite power semiconductor device and method |
TWI414069B (en) * | 2011-01-05 | 2013-11-01 | Anpec Electronics Corp | Power transistor with low interface of low Miller capacitor and its making method |
US9887283B2 (en) * | 2013-05-10 | 2018-02-06 | Alpha And Omega Semiconductor Incorporated | Process method and structure for high voltage MOSFETs |
KR20160130538A (en) * | 2015-05-04 | 2016-11-14 | 이태복 | Apparatus and method for manufacturing a ultra thin device |
KR102388994B1 (en) | 2016-03-22 | 2022-04-22 | 실텍트라 게엠베하 | Combined laser treatment of a solid body to be split |
CN107275197A (en) | 2016-04-08 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
EP3551373A1 (en) * | 2016-12-12 | 2019-10-16 | Siltectra GmbH | Method for thinning solid body layers provided with components |
US11796737B2 (en) * | 2020-08-10 | 2023-10-24 | GenXComm, Inc. | Co-manufacturing of silicon-on-insulator waveguides and silicon nitride waveguides for hybrid photonic integrated circuits |
CN112967982B (en) * | 2020-09-10 | 2022-04-19 | 重庆康佳光电技术研究院有限公司 | Transfer substrate, manufacturing method of transfer substrate, chip transfer method and display panel |
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- 2006-07-19 KR KR1020087003930A patent/KR20080042833A/en not_active Application Discontinuation
- 2006-07-19 AT AT0928306A patent/AT504591A2/en not_active Application Discontinuation
- 2006-07-19 WO PCT/US2006/028270 patent/WO2007015951A2/en active Application Filing
- 2006-07-19 CN CNA200680027419XA patent/CN101233603A/en active Pending
- 2006-07-19 DE DE112006001943T patent/DE112006001943T5/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
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CN101233603A (en) | 2008-07-30 |
AT504591A2 (en) | 2008-06-15 |
KR20080042833A (en) | 2008-05-15 |
DE112006001943T5 (en) | 2008-05-29 |
US7635637B2 (en) | 2009-12-22 |
JP2009503853A (en) | 2009-01-29 |
US20100052046A1 (en) | 2010-03-04 |
US20070020884A1 (en) | 2007-01-25 |
WO2007015951A3 (en) | 2007-08-16 |
TW200710991A (en) | 2007-03-16 |
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