WO2007021701A3 - Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor - Google Patents

Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor Download PDF

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Publication number
WO2007021701A3
WO2007021701A3 PCT/US2006/030944 US2006030944W WO2007021701A3 WO 2007021701 A3 WO2007021701 A3 WO 2007021701A3 US 2006030944 W US2006030944 W US 2006030944W WO 2007021701 A3 WO2007021701 A3 WO 2007021701A3
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WO
WIPO (PCT)
Prior art keywords
trench
dielectric
field effect
effect transistor
gate field
Prior art date
Application number
PCT/US2006/030944
Other languages
French (fr)
Other versions
WO2007021701A2 (en
Inventor
Robert Herrick
Dean E Probst
Fred Session
Original Assignee
Fairchild Semiconductor
Robert Herrick
Dean E Probst
Fred Session
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor, Robert Herrick, Dean E Probst, Fred Session filed Critical Fairchild Semiconductor
Priority to AT0934506A priority Critical patent/AT504736A2/en
Priority to CN2006800287698A priority patent/CN101238581B/en
Priority to KR1020087005785A priority patent/KR101221242B1/en
Priority to JP2008526148A priority patent/JP5075823B2/en
Priority to DE112006002077.3T priority patent/DE112006002077B4/en
Publication of WO2007021701A2 publication Critical patent/WO2007021701A2/en
Publication of WO2007021701A3 publication Critical patent/WO2007021701A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Abstract

A shielded gate trench FET is formed as follows. A trench (202) is formed in a silicon region of a first conductivity type (204), the trench (202) including a shield electrode (208) insulated from the silicon region (204) by a shield dielectric (206). An inter-poly dielectric (IPD) (214) including a layer of thermal oxide (210) and a layer of conformal dielectric (212) is formed along an upper surface of the shield electrode (208). A gate dielectric (216) lining at least upper trench sidewalls (202) is formed. A gate electrode (218) is formed in the trench such that the gate electrode is insulated from the shield electrode by the IPD.
PCT/US2006/030944 2005-08-09 2006-08-04 Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor WO2007021701A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT0934506A AT504736A2 (en) 2005-08-09 2006-08-04 STRUCTURE AND METHOD FOR FORMING AN INTER POLY DIELECTRIC SYSTEM IN A FIELD EFFECT TRANSISTOR WITH SHIELDED GATE
CN2006800287698A CN101238581B (en) 2005-08-09 2006-08-04 Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor
KR1020087005785A KR101221242B1 (en) 2005-08-09 2006-08-04 Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor
JP2008526148A JP5075823B2 (en) 2005-08-09 2006-08-04 Structure and manufacturing method of interpoly insulating film in shield gate field effect transistor.
DE112006002077.3T DE112006002077B4 (en) 2005-08-09 2006-08-04 Method of forming an inter-poly dielectric field effect transistor and shielded gate field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/201,400 2005-08-09
US11/201,400 US7385248B2 (en) 2005-08-09 2005-08-09 Shielded gate field effect transistor with improved inter-poly dielectric

Publications (2)

Publication Number Publication Date
WO2007021701A2 WO2007021701A2 (en) 2007-02-22
WO2007021701A3 true WO2007021701A3 (en) 2007-09-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/030944 WO2007021701A2 (en) 2005-08-09 2006-08-04 Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor

Country Status (9)

Country Link
US (2) US7385248B2 (en)
JP (1) JP5075823B2 (en)
KR (1) KR101221242B1 (en)
CN (2) CN101238581B (en)
AT (1) AT504736A2 (en)
DE (1) DE112006002077B4 (en)
MY (1) MY141412A (en)
TW (1) TWI417963B (en)
WO (1) WO2007021701A2 (en)

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US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9577089B2 (en) 2010-03-02 2017-02-21 Vishay-Siliconix Structures and methods of fabricating dual gate devices

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