WO2007024807A3 - Apparatus and methods for spectrum based monitoring of chemical mechanical polishing - Google Patents

Apparatus and methods for spectrum based monitoring of chemical mechanical polishing Download PDF

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Publication number
WO2007024807A3
WO2007024807A3 PCT/US2006/032659 US2006032659W WO2007024807A3 WO 2007024807 A3 WO2007024807 A3 WO 2007024807A3 US 2006032659 W US2006032659 W US 2006032659W WO 2007024807 A3 WO2007024807 A3 WO 2007024807A3
Authority
WO
WIPO (PCT)
Prior art keywords
spectrum based
spectrum
endpoint
chemical mechanical
methods
Prior art date
Application number
PCT/US2006/032659
Other languages
French (fr)
Other versions
WO2007024807A9 (en
WO2007024807A2 (en
Inventor
Dominic J Benvegnu
Jeffrey Drue David
Bogdan Swedek
Harry Q Lee
Lakshmanan Karuppiah
Original Assignee
Applied Materials Inc
Dominic J Benvegnu
Jeffrey Drue David
Bogdan Swedek
Harry Q Lee
Lakshmanan Karuppiah
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/213,674 external-priority patent/US7226339B2/en
Priority claimed from US11/261,742 external-priority patent/US7406394B2/en
Priority to KR1020137008961A priority Critical patent/KR101423579B1/en
Priority to CN2006800304049A priority patent/CN101242931B/en
Priority to KR1020137008965A priority patent/KR101398567B1/en
Priority to KR1020087006475A priority patent/KR101324644B1/en
Application filed by Applied Materials Inc, Dominic J Benvegnu, Jeffrey Drue David, Bogdan Swedek, Harry Q Lee, Lakshmanan Karuppiah filed Critical Applied Materials Inc
Priority to JP2008528048A priority patent/JP5534672B2/en
Priority to KR1020147029677A priority patent/KR101593927B1/en
Priority to KR1020137008968A priority patent/KR101398570B1/en
Priority to KR1020147002129A priority patent/KR101521414B1/en
Publication of WO2007024807A2 publication Critical patent/WO2007024807A2/en
Publication of WO2007024807A3 publication Critical patent/WO2007024807A3/en
Publication of WO2007024807A9 publication Critical patent/WO2007024807A9/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

Apparatus and methods for spectrum based monitoring of chemical mechanical polishing, including spectrum based endpointing, spectrum based polishing rate adjustment, flushing a top surface of an optical head (53), or a pad (30) with a window. The spectrum-based endpointing uses a reference spectrum which is empirically selected for particular spectrum based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum based endpoint logic. The polishing endpoint can be determined using a difference trace or a sequence of index values. The flushing system creates a laminar gas flow across the top surface of the optical head (53). The vacuum nozzle (308) and vacuum sources (312) are configured so that the flow of gas is laminar. The window includes a soft plastic portion and a crystalline or glass like portion. The spectrum based polishing rate adjustment includes obtaining spectra for different zones on a substrate.
PCT/US2006/032659 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing WO2007024807A2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020147002129A KR101521414B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR1020137008968A KR101398570B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
CN2006800304049A CN101242931B (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR1020137008965A KR101398567B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR1020087006475A KR101324644B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR1020137008961A KR101423579B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
JP2008528048A JP5534672B2 (en) 2005-08-22 2006-08-21 Apparatus and method for spectrum-based monitoring of chemical mechanical polishing
KR1020147029677A KR101593927B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US71068205P 2005-08-22 2005-08-22
US60/710,682 2005-08-22
US11/213,674 US7226339B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/213,674 2005-08-26
US11/213,344 US7764377B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/213,675 US7306507B2 (en) 2005-08-22 2005-08-26 Polishing pad assembly with glass or crystalline window
US11/213,344 2005-08-26
US11/213,675 2005-08-26
US11/261,742 US7406394B2 (en) 2005-08-22 2005-10-28 Spectra based endpointing for chemical mechanical polishing
US11/261,742 2005-10-28
US74776806P 2006-05-19 2006-05-19
US60/747,768 2006-05-19

Publications (3)

Publication Number Publication Date
WO2007024807A2 WO2007024807A2 (en) 2007-03-01
WO2007024807A3 true WO2007024807A3 (en) 2007-07-12
WO2007024807A9 WO2007024807A9 (en) 2009-09-03

Family

ID=37560902

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/032659 WO2007024807A2 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing

Country Status (4)

Country Link
JP (1) JP5534672B2 (en)
KR (1) KR101324644B1 (en)
TW (1) TWI366872B (en)
WO (1) WO2007024807A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11847776B2 (en) 2020-06-29 2023-12-19 Applied Materials, Inc. System using film thickness estimation from machine learning based processing of substrate images

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
WO2008103964A2 (en) * 2007-02-23 2008-08-28 Applied Materials, Inc. Using spectra to determine polishing endpoints
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
US7967661B2 (en) 2008-06-19 2011-06-28 Micron Technology, Inc. Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture
US8439723B2 (en) 2008-08-11 2013-05-14 Applied Materials, Inc. Chemical mechanical polisher with heater and method
US8414357B2 (en) 2008-08-22 2013-04-09 Applied Materials, Inc. Chemical mechanical polisher having movable slurry dispensers and method
KR101668675B1 (en) * 2008-09-04 2016-10-24 어플라이드 머티어리얼스, 인코포레이티드 Adjusting polishing rates by using spectrographic monitoring of a substrate during processing
JP5774482B2 (en) * 2008-10-27 2015-09-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Goodness of fit in spectral monitoring of substrates during processing
US8751033B2 (en) * 2008-11-14 2014-06-10 Applied Materials, Inc. Adaptive tracking spectrum features for endpoint detection
JP5583137B2 (en) * 2008-11-26 2014-09-03 アプライド マテリアルズ インコーポレイテッド Using optical metrology for feedback and feedforward process control
KR101956838B1 (en) * 2009-11-03 2019-03-11 어플라이드 머티어리얼스, 인코포레이티드 Endpoint method using peak location of spectra contour plots versus time
JP5728239B2 (en) 2010-03-02 2015-06-03 株式会社荏原製作所 Polishing monitoring method, polishing method, polishing monitoring apparatus, and polishing apparatus
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
TWI496661B (en) * 2010-04-28 2015-08-21 Applied Materials Inc Automatic generation of reference spectra for optical monitoring
KR101907965B1 (en) * 2010-05-05 2018-10-16 어플라이드 머티어리얼스, 인코포레이티드 Dynamically or adaptively tracking spectrum features for endpoint detection
US8834229B2 (en) 2010-05-05 2014-09-16 Applied Materials, Inc. Dynamically tracking spectrum features for endpoint detection
US20110281510A1 (en) * 2010-05-12 2011-11-17 Applied Materials, Inc. Pad Window Insert
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
JP2012019114A (en) * 2010-07-08 2012-01-26 Tokyo Seimitsu Co Ltd Polishing end point detection system and polishing end point detection method
JP5612945B2 (en) 2010-07-23 2014-10-22 株式会社荏原製作所 Method and apparatus for monitoring progress of substrate polishing
TWI478259B (en) * 2010-07-23 2015-03-21 Applied Materials Inc Tracking spectrum features in two dimensions for endpoint detection
US8954186B2 (en) * 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
KR101602544B1 (en) * 2010-11-18 2016-03-10 캐보트 마이크로일렉트로닉스 코포레이션 Polishing pad comprising transmissive region
JP5980476B2 (en) 2010-12-27 2016-08-31 株式会社荏原製作所 Polishing apparatus and polishing method
US8547538B2 (en) * 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
WO2012148716A2 (en) * 2011-04-28 2012-11-01 Applied Materials, Inc. Varying coefficients and functions for polishing control
JP5715034B2 (en) * 2011-11-30 2015-05-07 株式会社東京精密 Polishing method by polishing apparatus
US9289875B2 (en) * 2012-04-25 2016-03-22 Applied Materials, Inc. Feed forward and feed-back techniques for in-situ process control
US9221147B2 (en) * 2012-10-23 2015-12-29 Applied Materials, Inc. Endpointing with selective spectral monitoring
JP6060308B2 (en) * 2013-03-15 2017-01-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Dynamic control of residue clearing using in situ profile control (ISPC)
US10012494B2 (en) * 2013-10-25 2018-07-03 Applied Materials, Inc. Grouping spectral data from polishing substrates
JP7197999B2 (en) 2018-05-11 2022-12-28 キオクシア株式会社 polishing equipment and polishing pads
KR102586252B1 (en) * 2018-07-06 2023-10-11 주식회사 케이씨텍 Device and method for detecting thickness of silicon oxide film on wafer
KR20210052559A (en) 2018-09-24 2021-05-10 어플라이드 머티어리얼스, 인코포레이티드 Machine vision as input to the CMP process control algorithm
SG10202012033VA (en) * 2019-12-10 2021-07-29 Ebara Corp Polishing method and polishing apparatus

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183001A (en) * 1998-12-10 2000-06-30 Okamoto Machine Tool Works Ltd Polish end-point detecting method for wafer and chemical-mechanical polishing device used for the same
WO2000054935A1 (en) * 1999-03-18 2000-09-21 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
JP2000310512A (en) * 1999-04-28 2000-11-07 Hitachi Ltd Method and device for measuring film thickness of thin film and method and device for manufacturing thin film device using the same
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
WO2001072470A1 (en) * 2000-03-29 2001-10-04 Nikon Corporation Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program
JP2001287159A (en) * 2000-04-05 2001-10-16 Nikon Corp Surface condition measuring method and measuring device, polishing machine, and semiconductor device manufacturing method
EP1176631A1 (en) * 1999-12-27 2002-01-30 Nikon Corporation Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device
US20020155789A1 (en) * 2001-04-20 2002-10-24 Bibby Thomas F.A. Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
JP2002359217A (en) * 2001-05-31 2002-12-13 Omron Corp Method and device for detecting polishing end point
US20030022400A1 (en) * 2001-07-27 2003-01-30 Hitachi, Ltd. Method and apparatus for measuring thickness of thin film and device manufacturing method using same
US20030053042A1 (en) * 2001-08-28 2003-03-20 Charles Chen Method and apparatus for optical endpoint detection during chemical mechanical polishing
US20030153246A1 (en) * 2002-01-17 2003-08-14 Mukesh Desai In-situ endpoint detect for non-transparent polishing member
US20030184732A1 (en) * 2002-03-29 2003-10-02 Lam Research System and method of broad band optical end point detection for film change indication
WO2004035265A1 (en) * 2002-10-17 2004-04-29 Ebara Corporation Polishing state monitoring apparatus and polishing apparatus and method
JP2005159203A (en) * 2003-11-28 2005-06-16 Hitachi Ltd Thickness measuring method and its instrument, polishing rate calculating method, and cpm processing method and its apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3832198B2 (en) * 2000-06-16 2006-10-11 日本電気株式会社 Method and apparatus for detecting end point of polishing of semiconductor wafer
JP2004165473A (en) * 2002-11-14 2004-06-10 Seiko Epson Corp Cmp device, cmp method, semiconductor device and its manufacturing method
US20050026542A1 (en) 2003-07-31 2005-02-03 Tezer Battal Detection system for chemical-mechanical planarization tool

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US20010039064A1 (en) * 1998-05-21 2001-11-08 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
JP2000183001A (en) * 1998-12-10 2000-06-30 Okamoto Machine Tool Works Ltd Polish end-point detecting method for wafer and chemical-mechanical polishing device used for the same
WO2000054935A1 (en) * 1999-03-18 2000-09-21 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
JP2000310512A (en) * 1999-04-28 2000-11-07 Hitachi Ltd Method and device for measuring film thickness of thin film and method and device for manufacturing thin film device using the same
US20030205664A1 (en) * 1999-05-20 2003-11-06 Hiroyuki Abe Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program
EP1176631A1 (en) * 1999-12-27 2002-01-30 Nikon Corporation Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device
WO2001072470A1 (en) * 2000-03-29 2001-10-04 Nikon Corporation Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program
JP2001287159A (en) * 2000-04-05 2001-10-16 Nikon Corp Surface condition measuring method and measuring device, polishing machine, and semiconductor device manufacturing method
US20020155789A1 (en) * 2001-04-20 2002-10-24 Bibby Thomas F.A. Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
JP2002359217A (en) * 2001-05-31 2002-12-13 Omron Corp Method and device for detecting polishing end point
US20030022400A1 (en) * 2001-07-27 2003-01-30 Hitachi, Ltd. Method and apparatus for measuring thickness of thin film and device manufacturing method using same
US20030053042A1 (en) * 2001-08-28 2003-03-20 Charles Chen Method and apparatus for optical endpoint detection during chemical mechanical polishing
US20030153246A1 (en) * 2002-01-17 2003-08-14 Mukesh Desai In-situ endpoint detect for non-transparent polishing member
US20030184732A1 (en) * 2002-03-29 2003-10-02 Lam Research System and method of broad band optical end point detection for film change indication
WO2004035265A1 (en) * 2002-10-17 2004-04-29 Ebara Corporation Polishing state monitoring apparatus and polishing apparatus and method
JP2005159203A (en) * 2003-11-28 2005-06-16 Hitachi Ltd Thickness measuring method and its instrument, polishing rate calculating method, and cpm processing method and its apparatus

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 200043, Derwent World Patents Index; AN 2000-486550, XP002413682 *
DATABASE WPI Week 200106, Derwent World Patents Index; AN 2001-046948, XP002414056 *
DATABASE WPI Week 200234, Derwent World Patents Index; AN 2002-296553, XP002413767 *
DATABASE WPI Week 200313, Derwent World Patents Index; AN 2003-133199, XP002413766 *
DATABASE WPI Week 200541, Derwent World Patents Index; AN 2005-400726, XP002413780 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11847776B2 (en) 2020-06-29 2023-12-19 Applied Materials, Inc. System using film thickness estimation from machine learning based processing of substrate images

Also Published As

Publication number Publication date
TW201103085A (en) 2011-01-16
KR101324644B1 (en) 2013-11-01
WO2007024807A9 (en) 2009-09-03
WO2007024807A2 (en) 2007-03-01
KR20080042895A (en) 2008-05-15
JP2009505847A (en) 2009-02-12
TWI366872B (en) 2012-06-21
JP5534672B2 (en) 2014-07-02

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