WO2007027169A3 - Method of manufacturing silicon topological capacitors - Google Patents

Method of manufacturing silicon topological capacitors Download PDF

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Publication number
WO2007027169A3
WO2007027169A3 PCT/US2005/030715 US2005030715W WO2007027169A3 WO 2007027169 A3 WO2007027169 A3 WO 2007027169A3 US 2005030715 W US2005030715 W US 2005030715W WO 2007027169 A3 WO2007027169 A3 WO 2007027169A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing silicon
topological
capacitors
topological capacitors
fabricate
Prior art date
Application number
PCT/US2005/030715
Other languages
French (fr)
Other versions
WO2007027169A2 (en
Inventor
Shinzo Onishi
L C Langebrake
Original Assignee
Univ South Florida
Shinzo Onishi
L C Langebrake
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ South Florida, Shinzo Onishi, L C Langebrake filed Critical Univ South Florida
Priority to PCT/US2005/030715 priority Critical patent/WO2007027169A2/en
Priority to US11/679,580 priority patent/US7829409B2/en
Publication of WO2007027169A2 publication Critical patent/WO2007027169A2/en
Publication of WO2007027169A3 publication Critical patent/WO2007027169A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/01—Form of self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer

Abstract

In accordance with the present invention, a novel method to fabricate topological capacitors (65) is provided. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements (67) and non-conductive element groups.
PCT/US2005/030715 2004-08-27 2005-08-30 Method of manufacturing silicon topological capacitors WO2007027169A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/US2005/030715 WO2007027169A2 (en) 2005-08-30 2005-08-30 Method of manufacturing silicon topological capacitors
US11/679,580 US7829409B2 (en) 2004-08-27 2007-02-27 Method of manufacturing silicon topological capacitors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2005/030715 WO2007027169A2 (en) 2005-08-30 2005-08-30 Method of manufacturing silicon topological capacitors

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/679,580 Continuation US7829409B2 (en) 2004-08-27 2007-02-27 Method of manufacturing silicon topological capacitors

Publications (2)

Publication Number Publication Date
WO2007027169A2 WO2007027169A2 (en) 2007-03-08
WO2007027169A3 true WO2007027169A3 (en) 2009-04-16

Family

ID=37809307

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/030715 WO2007027169A2 (en) 2004-08-27 2005-08-30 Method of manufacturing silicon topological capacitors

Country Status (2)

Country Link
US (1) US7829409B2 (en)
WO (1) WO2007027169A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2255376B1 (en) * 2008-02-20 2013-09-04 Nxp B.V. Method of manufacturing an ultra-high-density capacity comprising pillar-shaped capacitors formed on both sides of a substrate
CN103337380B (en) * 2013-04-11 2016-06-01 北京大学 A kind of novel silicon base super capacitor and making method thereof
US9412806B2 (en) 2014-06-13 2016-08-09 Invensas Corporation Making multilayer 3D capacitors using arrays of upstanding rods or ridges
KR101963285B1 (en) * 2017-04-26 2019-03-28 삼성전기주식회사 Capacitor and board having the same
US11329125B2 (en) * 2018-09-21 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including trench capacitor
JP7314001B2 (en) * 2019-09-20 2023-07-25 株式会社東芝 capacitor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959322A (en) * 1993-10-07 1999-09-28 Samsung Electronics Co., Ltd. Isolated SOI memory structure with vertically formed transistor and storage capacitor in a substrate
US6569734B2 (en) * 1998-09-29 2003-05-27 Texas Instruments Incorporated Method for two-sided fabrication of a memory array

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830978A (en) 1987-03-16 1989-05-16 Texas Instruments Incorporated Dram cell and method
US5103276A (en) 1988-06-01 1992-04-07 Texas Instruments Incorporated High performance composed pillar dram cell
US5006909A (en) 1989-10-30 1991-04-09 Motorola, Inc. Dram with a vertical capacitor and transistor
US5065273A (en) 1990-12-04 1991-11-12 International Business Machines Corporation High capacity DRAM trench capacitor and methods of fabricating same
KR0151197B1 (en) 1994-11-21 1998-10-01 문정환 Semconductor device & its manufacturing method
US5821142A (en) 1996-04-08 1998-10-13 Vanguard International Semiconductor Method for forming a capacitor with a multiple pillar structure
KR100209212B1 (en) 1996-10-22 1999-07-15 김영환 Semiconductor device and manufacture thereof
US5929477A (en) 1997-01-22 1999-07-27 International Business Machines Corporation Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array
DE19718721C2 (en) * 1997-05-02 1999-10-07 Siemens Ag DRAM cell arrangement and method for its production
TW388123B (en) 1997-09-02 2000-04-21 Tsmc Acer Semiconductor Mfg Co Method of producing DRAM capacitance and structure thereof
US5981350A (en) 1998-05-29 1999-11-09 Micron Technology, Inc. Method for forming high capacitance memory cells
US6137128A (en) 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
DE19845004C2 (en) 1998-09-30 2002-06-13 Infineon Technologies Ag DRAM cell arrangement and method for its production
US5977579A (en) 1998-12-03 1999-11-02 Micron Technology, Inc. Trench dram cell with vertical device and buried word lines
JP2003031686A (en) 2001-07-16 2003-01-31 Sony Corp Semiconductor storage device and its manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959322A (en) * 1993-10-07 1999-09-28 Samsung Electronics Co., Ltd. Isolated SOI memory structure with vertically formed transistor and storage capacitor in a substrate
US6569734B2 (en) * 1998-09-29 2003-05-27 Texas Instruments Incorporated Method for two-sided fabrication of a memory array

Also Published As

Publication number Publication date
US7829409B2 (en) 2010-11-09
WO2007027169A2 (en) 2007-03-08
US20100118465A1 (en) 2010-05-13

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