WO2007040676A2 - Electron beam induced resonance - Google Patents
Electron beam induced resonance Download PDFInfo
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- WO2007040676A2 WO2007040676A2 PCT/US2006/023280 US2006023280W WO2007040676A2 WO 2007040676 A2 WO2007040676 A2 WO 2007040676A2 US 2006023280 W US2006023280 W US 2006023280W WO 2007040676 A2 WO2007040676 A2 WO 2007040676A2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/0903—Free-electron laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/953—Detector using nanostructure
- Y10S977/954—Of radiant energy
Definitions
- This disclosure relates to resonance induced in ultra-small metal-layer
- Electromagnetic radiation is produced by the motion of electrically charged
- Electromagnetic radiation is essentially
- electromagnetic waves The term can also refer to the emission and propagation of such
- Electromagnetic radiation falls into
- Electromagnetic radiation for electron oscillation or excitation at the frequency desired. Electromagnetic radiation
- electromagnetic radiation at a desired frequency become generally smaller and harder to
- Klystrons are a type of linear beam microwave tube.
- klystron is shown by way of example in Figure l(a). In the late 1930s, a klystron
- klystron 100 is shown as a high- vacuum device with a cathode 102 that emits a well-
- the cavities are sized and designed to
- the electron bunches are formed when an oscillating electric field causes
- the electron stream to be velocity modulated so that some number of electrons increase in
- the induced current can then generate
- a TWT includes a source of electrons that travels
- Backwards wave devices are also known and differ from TWTs in that they
- a backwards wave device uses the concept of a backward group velocity with a
- Backward wave devices could be amplifiers or oscillators.
- Magnetrons are another type of well-known resonance cavity structure
- each magnetron includes an anode, a cathode, a particular wave
- Figure l(b) shows an exemplary magnetron 112.
- the cathode 118 is in the center of the magnetron, as
- the cathode Absent a magnetic field, the cathode would send electrons directly outward toward the anode portions forming the tube 114. With a magnetic field present and in
- the bunching and unbunching electrons set up a
- klystron 120 is shown in Figure l(c). There, the cathode 122 emits electrons toward the
- the reflex klystron 120 has
- the electron beam is modulated (as in other klystrons)
- the electron beam is not terminated at an output cavity
- radio and microwave levels up to, for example, GHz levels
- visible light radiation in the range of 400 Terahertz - 750 Terahertz is not
- the bunched electron beam passes the opening of the
- the energy of the light is bound to the surface and
- plasmons can propagate beneath the surface, although they are typically not energetically
- the free electron laser includes a charged particle
- the accelerator injects a
- the undulator periodically modulates in space the
- An optical cavity is defined
- optical gain per passage exceeds the light losses that occur in the optical cavity.
- electrons are deflected by image charges in the grating at a frequency in the visible spectrum.
- the effect may be a single electron event, but some
- the beam current is generally, but not
- the grating must exceed the wavelength of light.
- the apparent object of this is to create coherent
- Koops, et al. describe a given standard electron beam
- the diffraction grating has a length of approximately 1 mm to 1 cm, with
- the device resonance matches the system resonance with resulting higher
- the interaction can provide a transfer of
- photoconductor For example, photoconductor
- semiconductor devices use the absorption process to receive the electromagnetic wave
- extrinsic photoconductor devices operate having transitions across forbidden-
- absorption coefficient A point where the absorption
- the absorption coefficient decreases rapidly is called a cutoff wavelength.
- the absorption coefficient is
- GaAs arsenide
- silicon (Si) can absorb
- the device can work to couple the electromagnetic wave's energy only over a particular
- Coupled Device an intrinsic photoconductor device — can successfully be
- certain extrinsic semiconductors devices can provide for coupling energy at increasing
- Raman spectroscopy is a well-known means to measure the characteristics
- nano-sized features of the substrate cause variation in the intensity and shape of the local
- Drachev et al. describe a Raman imaging and sensing device employing nanoantennas.
- the antennas are metal structures deposited onto a surface.
- the structures are
- the radiation excites a plasmon in the antennas that
- the micro resonant structure can be used for visible light
- micro-resonance structures can rival semiconductor devices in size
- non-semiconductor illuminators such as incandescent, fluorescent, or other
- Those applications can include displays for personal or commercial use,
- illumination for private display such as on computers
- Ultra-small resonant structures that emit at frequencies such as a few tens of
- terahertz can penetrate walls, making them invisible to a transceiver, which is
- the ability to penetrate walls can also be IPC T/U SOB / ' S BS B O used for imaging objects beyond the walls, which is also useful in, for example, security
- X-ray frequencies can also be produced for use in medicine, diagnostics,
- Terahertz radiation from ultra-small resonant structures can be used in many of the following reasons:
- radiation can be coherent and is non-ionizing.
- the frequency of the radiation can be high enough to produce visible light of any
- the devices may be tunable to obtain
- the present devices are easily integrated onto even an existing silicon microchip and can
- Figure l(a) shows a prior art example klystron.
- Figure l(b) shows a prior art example magnetron.
- Figure l(c) shows a prior art example reflex klystron.
- Figure l(d) depicts aspects of the Smith-Pufcell theory. [ CT/ " USOB/ 53E! 80l
- Figure 2 is schematic representation of an example embodiment of the
- Figure 3 is another schematic representation of certain parameters
- Figure 4 is a microscopic photograph of an example light-emitting comb
- Figure 5 is a microscopic photograph of a series of example light-emitting
- Figure 6 is a microscopic photograph of a series of example light-emitting
- Figure 7 is a microscopic photograph of a side view of example series of
- Figure 10 is an example substrate pattern used for testing the effect of comb
- Figure 11 is a microscopic photograph of a side view of an example comb
- Figure 12 is a microscopic photograph of a series of frequency sensitive
- Figure 13 is a graph showing example intensity and wavelength versus
- Figure 14 is a graph showing intensity versus post length for the series of
- Figures 15 and 16 are microscopic photographs of dual rows of comb teeth
- Figure 17 is an example substrate with example dual rows of comb teeth
- Figures 18-20 are further examples of dual rows of comb teeth.
- Figures 21-24 are further examples of dual rows of C-shaped structures.
- the metal need not be a contiguous layer, but can be a series of elements
- the metal with the individual elements can be
- the substrate they can be on a silver layer on top of the substrate, for example). That is,
- the posts may be etched or plated in a manner so a small layer of conductor remains » CT/usoe/B35eo beneath, between and connecting the posts.
- the posts can be conductively
- the metal can be silver, although other metal conductors and even
- dielectrics are envisioned as well.
- a charged particle beam such as an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron beam 12 produced by an electron
- the metal posts 14 include individual post members 15a, 15b,...15n. The number of post
- members 15a...15n can be as few as one and as many as the available real estate permits.
- the post members and/or cavities resonate when the electron beam
- That resonance is supplementing system resonance, namely the resonance that occurs
- the second peak and is also responsible for amplifying the intensity of the system
- ⁇ is the frequency of the resonance
- L is the period of the grating
- n is a constant
- ⁇ is related to the speed of the electron beam
- ⁇ is the angle of diffraction of the electron.
- the space width s (shown in Figure 3) and post width (1-s) indicates that the space width s
- period length 1 have relevance to the center frequency of the resultant radiation.
- metal layer is silver.
- the metal is pulse plated to provide the posts 14 shown.
- the post length is about 698nm.
- the space width, s is about
- the post and space width, 1, is about 155nm.
- multiple colors of visible light can be produced by directing an injected
- the result could be a mixed, multiple wavelength light.
- micro- structure Because the rows are only about a few micrometers or less apart,
- Figure 7 illustrates a side view of a set of rows of posts. As shown, each
- first row is 123nm, while the space of the fourth row is 57nm. Depths and lengths can
- Each of the rows can exhibit different post geometries (although there are no
- the post elements 14 do not necessarily have to have
- substrate can resemble a comb with a backbone connecting all of the teeth, as in Figure 4,
- the posts can be connected by
- the posts have period length 1 of 213 nm, a post width (I - s) of 67.6 nm and a height
- Figures 8 and 9 illustrate still further example geometries of non-backboned
- the posts numbers of the posts, sequences of the posts, and arrangements of the posts can be any number of the posts, numbers of the posts, sequences of the posts, and arrangements of the posts.
- metal or other conductive layers of different types can be employed. As described
- Figure 12 illustrates anther set of post rows (similar to Figure 10). The
- Figures 15-17 are still further example configurations of the rows of posts
- Each row can have posts of the same geometry or each row can have posts of different dimensions
- Figure 17 is a substrate with some two row embodiments, as in Figures 15
- geometries of posts geometries of rows, orientations of posts and rows, kinds of posts,
- Figures 21-24 show still further example resonant structures by
- structures are not in the form of straight posts (as in Figure 1), but are instead C-shaped
- Figure 21 also illustrates a device that exhibits higher order of harmonics
- the period of the repeating Cs is less than the wavelength of
- the Cs is 117nm. The distance from the end of one arm of a big-C to the other arm of the
- each big-C arm is about 515nm.
- Figure 22 illustrates a double rowed, single-C embodiment in which offset
- period of the repeating arms is about 427nm.
- runs is about 40nm.
- the width of the C is about 122nm.
- Figure 23 illustrates a number of example light-producing embodiments
- Figure 24 is a hybrid of the Cs
- the posts and C-arms have a period of
- hermetic sealing techniques can be employed to ensure the vacuum condition remains
- the conductive structures described herein are preferably comprised of
- silver but may be any conductive metal or may be any non-metallic conductor such as an
- Dielectrics are also envisioned as layer materials in the alternative to
Abstract
We describe an ultra-small structure that produces visible light of varying frequency, from a single metallic layer. In one example, a row of metallic posts are etched or plated on a substrate according to a particular geometry. When a charged particle beam passed close by the row of posts, the posts and cavities between them cooperate to resonate and produce radiation in the visible spectrum (or even higher). A plurality of such rows of different geometries can be etched or plated from a single metal layer such that the charged particle beam will yield different visible light frequencies (i.e., different colors) using different ones of the rows.
Description
ELECTRONBEAMINDUCEDRESONANCE
Copyright Notice
[0001] A portion of the disclosure of this patent document contains material which is subject to copyright or mask work protection. The copyright or mask work owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent file or records, but otherwise reserves all copyright or mask work rights whatsoever.
Related Applications
[0002] This application is related to and claims priority from U.S. Patent
Application No. __/__,___, [atty. docket 2549-0003], titled "Ultra-Small Resonating Charged Particle Beam Modulator," and filed September 30, 2005, the entire contents of which are incorporated herein by reference. This application is related to U.S. Patent Application No. 10/917,511, filed on August 13, 2004, entitled "Patterning Thin Metal Film by Dry Reactive Ion Etching," and to U.S. Application No. 11/203,407, filed on August 15, 2005, entitled "Method Of Patterning Ultra-Small Structures," and to U.S. Application No. _/__,___ [Atty. Docket 2549-0058], titled "Structures And Methods For Coupling Energy From An Electromagnetic Wave," filed on even date herewith, all of which are commonly owned with the present application at the time of filing, and the entire contents of each of which are incorporated herein by reference.
Field Of Invention
[0003] This disclosure relates to resonance induced in ultra-small metal-layer
structures by a charged particle beam.
Atty. Docket 25 -0 59 / UB OG/ E 3 Eu S O
INTRODUCTIONANDBACKGROUND
Electromagnetic Radiation & Waves
[0004] Electromagnetic radiation is produced by the motion of electrically charged
particles. Oscillating electrons produce electromagnetic radiation commensurate in
frequency with the frequency of the oscillations. Electromagnetic radiation is essentially
energy transmitted through space or through a material medium in the form of
electromagnetic waves. The term can also refer to the emission and propagation of such
energy. Whenever an electric charge oscillates or is accelerated, a disturbance
characterized by the existence of electric and magnetic fields propagates outward from it.
This disturbance is called an electromagnetic wave. Electromagnetic radiation falls into
categories of wave types depending upon their frequency, and the frequency range of
such waves is tremendous, as is shown by the electromagnetic spectrum in the following
chart (which categorizes waves into types depending upon their frequency):
type (e.g., radio, microwave, etc.) depends upon the ability to create a structure suitable
for electron oscillation or excitation at the frequency desired. Electromagnetic radiation
at radio frequencies, for example, is relatively easy to generate using relatively' large or
even somewhat small structures.
Electromagnetic Wave Generation
[0006] There are many traditional ways to produce high-frequency radiation in
ranges at and above the visible spectrum, for example, up to high hundreds of Terahertz.
There are also many traditional and anticipated applications that use such high frequency
radiation. As frequencies increase, however, the kinds of structures needed to create the
electromagnetic radiation at a desired frequency become generally smaller and harder to
manufacture. We have discovered ultra-small-scale devices that obtain multiple different
frequencies of radiation from the same operative layer.
[0007] Resonant structures have been the basis for much of the presently known
high frequency electronics. Devices like klystrons and magnetrons had electronics that
moved frequencies of emission up to the megahertz range by the 1930s and 1940s. By
around 1960, people were trying to reduce the size of resonant structures to get even
higher frequencies, but had limited success because the Q of the devices went down due
to the resistivity of the walls of the resonant structures. At about the same time, Smith
and Purcell saw the first signs that free electrons could cause the emission of
electromagnetic radiation in the visible range by running an electron beam past a
P C T/* IJl S O B / H 3 iΞ 3 O diffraction grating. Since then, there has been much speculation as to what the physical
basis for the Smith-Purcell radiation really is.
[0008] We have shown that some of the theory of resonant structures applies to
certain nano structures that we have built. It is assumed that at high enough frequencies,
plasmons conduct the energy as opposed to the bulk transport of electrons in the material,
although our inventions are not dependent upon such an explanation. Under that theory,
the electrical resistance decreases to the point where resonance can effectively occur
again, and makes the devices efficient enough to be commercially viable.
[0009] Some of the more detailed background sections that follow provide
background for the earlier technologies (some of which are introduced above), and
provide a framework for understanding why the present inventions are so remarkable
compared to the present state-of-the-art.
Microwaves
[0010] As previously introduced, microwaves were first generated in so-called
"klystrons" in the 1930s by the Varian brothers. Klystrons are now well-known
structures for oscillating electrons and creating electromagnetic radiation in the
microwave frequency. The structure and operation of klystrons has been well-studied
and documented and will be readily understood by the artisan. However, for the purpose
of background, the operation of the klystron will be described at a high level, leaving the
particularities of such devices to the artisan's present understanding.
;;;" C T/ U S O IB ,/ 532 B O
[0011] Klystrons are a type of linear beam microwave tube. A basic structure of a
klystron is shown by way of example in Figure l(a). In the late 1930s, a klystron
structure was described that involved a direct current stream of electrons within a vacuum
cavity passing through an oscillating electric field. In the example of Figure l(a), a
klystron 100 is shown as a high- vacuum device with a cathode 102 that emits a well-
focused electron beam 104 past a number of cavities 106 that the beam traverses as it
travels down a linear tube 108 to anode 103. The cavities are sized and designed to
resonate at or near the operating frequency of the tube. The principle, in essence,
involves conversion of the kinetic energy in the beam, imparted by a high accelerating
voltage, to microwave energy. That conversion takes place as a result of the amplified
RF (radio frequency) input signal causing the electrons in the beam to "bunch up" into
so-called "bunches" (denoted 110) along the beam path as they pass the various cavities
106. These bunches then give up their energy to the high-level induced RF fields at the
output cavity.
[0012] The electron bunches are formed when an oscillating electric field causes
the electron stream to be velocity modulated so that some number of electrons increase in
speed within the stream and some number of electrons decrease in speed within the
stream. As the electrons travel through the drift tube of the vacuum cavity the bunches
that are formed create a space-charge wave or charge-modulated electron beam. As the
electron bunches pass the mouth of the output cavity, the bunches induce a large current,
much larger than the input current. The induced current can then generate
electromagnetic radiation.
Traveling Wave Tubes
[0013] Traveling wave tubes (TWT) - first described in 1942 - are another well-
known type of linear microwave tube. A TWT includes a source of electrons that travels
the length of a microwave electronic tube, an attenuator, a helix delay line, radio
frequency (RF) input and output, and an electron collector. In the TWT, an electrical
current was sent along the helical delay line to interact with the electron stream.
Backwards Wave Devices
[0014] Backwards wave devices are also known and differ from TWTs in that they
use a wave in which the power flow is opposite in direction from that of the electron
beam. A backwards wave device uses the concept of a backward group velocity with a
forward phase velocity. In this case, the RF power comes out at the cathode end of the
device. Backward wave devices could be amplifiers or oscillators.
Magnetrons
[0015] Magnetrons are another type of well-known resonance cavity structure
developed in the 1920s to produce microwave radiation. While their external
configurations can differ, each magnetron includes an anode, a cathode, a particular wave
tube and a strong magnet. Figure l(b) shows an exemplary magnetron 112. In the
example magnetron 112 of Figure l(b), the anode is shown as the (typically iron) external
structure of the circular wave tube 114 and is interrupted by a number of cavities 116
interspersed around the tube 114. The cathode 118 is in the center of the magnetron, as
shown. Absent a magnetic field, the cathode would send electrons directly outward
toward the anode portions forming the tube 114. With a magnetic field present and in
parallel to the cathode, electrons emitted from the cathode take a circular path 118 around
the tube as they emerge from the cathode and move toward the anode. The magnetic
field from the magnet (not shown) is thus used to cause the electrons of the electron beam
to spiral around the cathode, passing the various cavities 116 as they travel around the
tube. As with the linear klystron, if the cavities are tuned correctly, they cause the
electrons to bunch as they pass by. The bunching and unbunching electrons set up a
resonant oscillation within the tube and transfer their oscillating energy to an output
cavity at a microwave frequency.
Reflex Klystron
[0016] Multiple cavities are not necessarily required to produce microwave
radiation. In the reflex klystron, a single cavity, through which the electron beam is
passed, can produce the required microwave frequency oscillations. An example reflex
klystron 120 is shown in Figure l(c). There, the cathode 122 emits electrons toward the
reflector plate 124 via an accelerator grid 126 and grids 128. The reflex klystron 120 has
a single cavity 130. In this device, the electron beam is modulated (as in other klystrons)
by passing by the cavity 130 on its way away from the cathode 122 to the plate 124.
Unlike other klystrons, however, the electron beam is not terminated at an output cavity,
but instead is reflected by the reflector plate 124. The reflection provides the feedback
necessary to maintain electron oscillations within the tube.
■■»cτ/ysoe/Ξ3Eeo
[0017] In each of the resonant cavity devices described above, the characteristic
frequency of electron oscillation depends upon the size, structure, and tuning of the
resonant cavities. To date, structures have been discovered that create relatively low
frequency radiation (radio and microwave levels), up to, for example, GHz levels, using
these resonant structures. Higher levels of radiation are generally thought to be
prohibitive because resistance in the cavity walls will dominate with smaller sizes and
will not allow oscillation. Also, using current techniques, aluminum and other metals
cannot be machined down to sufficiently small sizes to form the cavities desired. Thus,
for example, visible light radiation in the range of 400 Terahertz - 750 Terahertz is not
known to be created by klystron-type structures.
[0018] U.S. Patent No. 6,373, 194 to Small illustrates the difficulty in obtaining
small, high-frequency radiation sources. Small suggests a method of fabricating a micro-
magnetron. In a magnetron, the bunched electron beam passes the opening of the
resonance cavity. But to realize an amplified signal, the bunches of electrons must pass
the opening of the resonance cavity in less time than the desired output frequency. Thus
at a frequency of around 500 THz, the electrons must travel at very high speed and still
remain confined. There is no practical magnetic field strong enough to keep the electron
spinning in that small of a diameter at those speeds. Small recognizes this issue but does
not disclose a solution to it.
[0019] Surface plasmons can be excited at a metal dielectric interface by a
monochromatic light beam. The energy of the light is bound to the surface and
propagates as an electromagnetic wave. Surface plasmons can propagate on the surface
. ... CTZ USOBZEiIB EBO of a metal as well as on the interface between a metal and dielectric material. Bulk
plasmons can propagate beneath the surface, although they are typically not energetically
favored.
[0020] Free electron lasers offer intense beams of any wavelength because the
electrons are free of any atomic structure. In U.S. Patent No. 4,740,973, Madey et al
disclose a free electron laser. The free electron laser includes a charged particle
accelerator, a cavity with a straight section and an undulator. The accelerator injects a
relativistic electron or positron beam into said straight section past an undulator mounted
coaxially along said straight section. The undulator periodically modulates in space the
acceleration of the electrons passing through it inducing the electrons to produce a light
beam that is practically collinear with the axis of undulator. An optical cavity is defined
by two mirrors mounted facing each other on either side of the undulator to permit the
circulation of light thus emitted. Laser amplification occurs when the period of said
circulation of light coincides with the period of passage of the electron packets and the
optical gain per passage exceeds the light losses that occur in the optical cavity.
Smith-Purcell
[0021] Smith-Purcell radiation occurs when a charged particle passes close to a
periodically varying metallic surface, as depicted in Figure l(d).
[0022] Known Smith-Purcell devices produce visible light by passing an electron
beam close to the surface of a diffraction grating. Using the Smith-Purcell diffraction
grating, electrons are deflected by image charges in the grating at a frequency in the
visible spectrum. In some cases, the effect may be a single electron event, but some
devices can exhibit a change in slope of the output intensity versus current. In Smith-
Purcell devices, only the energy of the electron beam and the period of the grating affect
the frequency of the visible light emission. The beam current is generally, but not
always, small. Vermont Photonics notice an increase in output with their devices above a
certain current density limit. Because of the nature of diffraction physics, the period of
the grating must exceed the wavelength of light.
[0023] Koops, et al, U.S. Patent No. 6,909,104, published November 30, 2000, (§
102(e) date May 24, 2002) describe a miniaturized coherent terahertz free electron laser
using a periodic grating for the undulator (sometimes referred to as the wiggler). Koops
et al. describe a free electron laser using a periodic structure grating for the undulator
(also referred to as the wiggler). Koops proposes using standard electronics to bunch the
electrons before they enter the undulator. The apparent object of this is to create coherent
terahertz radiation. In one instance, Koops, et al. describe a given standard electron beam
source that produces up to approximately 20,000 volts accelerating voltage and an
electron beam of 20 microns diameter over a grating of 100 to 300 microns period to
achieve infrared radiation between 100 and 1000 microns in wavelength. For terahertz
radiation, the diffraction grating has a length of approximately 1 mm to 1 cm, with
grating periods of 0.5 to 10 microns, "depending on the wavelength of the terahertz
radiation to be emitted." Koops proposes using standard electronics to bunch the
electrons before they enter the undulator.
[0024] Potylitsin, "Resonant Diffraction Radiation and Smith-Purcell Effect," 13
April 1998, described an emission of electrons moving close to a periodic structure
treated as the resonant diffraction radiation. Potylitsin' s grating had "perfectly
conducting strips spaced by a vacuum gap."
[0025] Smith-Purcell devices are inefficient. Their production of light is weak
compared to their input power, and they cannot be optimized. Current Smith-Purcell
devices are not suitable for true visible light applications due at least in part to their
inefficiency and inability to effectively produce sufficient photon density to be detectible
without specialized equipment.
[0026] We realized that the Smith-Purcell devices yielded poor light production
efficiency. Rather than deflect the passing electron beam as Smith-Purcell devices do,
we created devices that resonated at the frequency of light as the electron beam passes by.
In this way, the device resonance matches the system resonance with resulting higher
output. Our discovery has proven to produce visible light (or even higher or lower
frequency radiation) at higher yields from optimized ultra-small physical structures.
Coupling Energy From Electromagnetic Waves
[0027] Coupling energy from electromagnetic waves in the terahertz range from
0.1 THz (about 3000 microns) to 700 THz (about 0.4 microns) is finding use in numerous
new applications. These applications include improved detection of concealed weapons
and explosives, improved medical imaging, finding biological terror materials, better
TV' U S Oi IB /'Ei! 3EiISO characterization of semiconductors; and broadening the available bandwidth for wireless
communications.
[0028] In solid materials the interaction between an electromagnetic wave and a
charged particle, namely an electron, can occur via three basic processes: absorption,
spontaneous emission and stimulated emission. The interaction can provide a transfer of
energy between the electromagnetic wave and the electron. For example, photoconductor
semiconductor devices use the absorption process to receive the electromagnetic wave
and transfer energy to electron-hole pairs by band-to-band transitions. Electromagnetic
waves having an energy level greater than a material's characteristic binding energy can
create electrons that move when connected across a voltage source to provide a current.
In addition, extrinsic photoconductor devices operate having transitions across forbidden-
gap energy levels use the absorption process (S .M., Sze, "Semiconductor Devices
Physics and Technology," 2002).
[0029] A measure of the energy coupled from an electromagnetic wave for the
material is referred to as an absorption coefficient. A point where the absorption
coefficient decreases rapidly is called a cutoff wavelength. The absorption coefficient is
dependant on the particular material used to make a device. For example, gallium
arsenide (GaAs) absorbs electromagnetic wave energy from about 0.6 microns and has a
cutoff wavelength of about 0.87 microns. In another example, silicon (Si) can absorb
energy from about 0.4 microns and has a cutoff wavelength of about 1.1 microns. Thus,
the ability to transfer energy to the electrons within the material for making the device is
a function of the wavelength or frequency of the electromagnetic wave. This means the
device can work to couple the electromagnetic wave's energy only over a particular
segment of the terahertz range. At the very high end of the terahertz spectrum a Charge
Coupled Device (CCD) — an intrinsic photoconductor device — can successfully be
employed. If there is a need to couple energy at the lower end of the terahertz spectrum
certain extrinsic semiconductors devices can provide for coupling energy at increasing
wavelengths by increasing the doping levels.
Surface Enhanced Raman Spectroscopy (SERS)
[0030] Raman spectroscopy is a well-known means to measure the characteristics
of molecule vibrations using laser radiation as the excitation source. A molecule to be
analyzed is illuminated with laser radiation and the resulting scattered frequencies are
collected in a detector and analyzed.
[0031] Analysis of the scattered frequencies permits the chemical nature of the
molecules to be explored. Fleischmann et al. (M. Fleischmann, P. J. Hendra and A. J.
McQuillan, Chem. Phys. Lett, 1974, 26, 163) first reported the increased scattering
intensities that result from Surface Enhanced Raman Spectroscopy (SERS), though
without realizing the cause of the increased intensity.
[0032] In SERS, laser radiation is used to excite molecules adsorbed or deposited
onto a roughened or porous metallic surface, or. a surface having metallic nano-sized
features or structures. The largest increase in scattering intensity is realized with surfaces
with features that are 10-100 nm in size. Research into the mechanisms of SERS over the
past 25 years suggests that both chemical and electromagnetic factors contribute to the
C T,,-" IJ S OB /' E 3 iΞ 8 O enhancing the Raman effect. {See, e.g., A. Campion and P. Kambhampati, Chem. Soc.
Rev., 1998, 27 241.)
[0033] The electromagnetic contribution occurs when the laser radiation excites
plasmon resonances in the metallic surface structures. These plasmons induce local
fields of electromagnetic radiation which extend and decay at the rate defined by the
dipole decay rate. These local fields contribute to enhancement of the Raman scattering
at an overall rate of E4.
[0034] Recent research has shown that changes in the shape and composition of
nano-sized features of the substrate cause variation in the intensity and shape of the local
fields created by the plasmons. Jackson and Halas (J.B. Jackson and NJ. Halas, PNAS,
2004, 101 17930) used nano-shells of gold to tune the plasmon resonance to different
frequencies.
[0035] Variation in the local electric field strength provided by the induced
plasmon is known in SERS-based devices. In U.S. Patent application 2004/0174521 Al,
Drachev et al. describe a Raman imaging and sensing device employing nanoantennas.
The antennas are metal structures deposited onto a surface. The structures are
illuminated with laser radiation. The radiation excites a plasmon in the antennas that
enhances the Raman scatter of the sample molecule.
[0036] The electric field intensity surrounding the antennas varies as a function of
distance from the antennas, as well as the size of the antennas. The intensity of the local
electric field increases as the distance between the antennas decreases.
C T/" 1,1 S O B / Ξ 3 ≡ S O Advantages & Benefits [0037] Myriad benefits and advantages can be obtained by a ultra-small resonant
structure that emits varying electromagnetic radiation at higher radiation frequencies such
as infrared, visible, UV and X-ray. For example, if the varying electromagnetic radiation
is in a visible light frequency, the micro resonant structure can be used for visible light
applications that currently employ prior art semiconductor light emitters (such as LCDs,
LEDs, and the like that employ electroluminescence or other light-emitting principals). If
small enough, such micro-resonance structures can rival semiconductor devices in size,
and provide more intense, variable, and efficient light sources. Such micro resonant
structures can also be used in place of (or in some cases, in addition to) any application
employing non-semiconductor illuminators (such as incandescent, fluorescent, or other
light sources). Those applications can include displays for personal or commercial use,
home or business illumination, illumination for private display such as on computers,
televisions or other screens, and for public display such as on signs, street lights, or other
indoor or outdoor illumination. Visible frequency radiation from ultra-small resonant
structures also has application in fiber optic communication, chip-to-chip signal coupling,
other electronic signal coupling, and any other light-using applications.
[0038] Applications can also be envisioned for ultra-small resonant structures that
emit in frequencies other than in the visible spectrum, such as for high frequency data
carriers. Ultra-small resonant structures that emit at frequencies such as a few tens of
terahertz can penetrate walls, making them invisible to a transceiver, which is
exceedingly valuable for security applications. The ability to penetrate walls can also be
IPC T/U SOB /'S BS B O used for imaging objects beyond the walls, which is also useful in, for example, security
applications. X-ray frequencies can also be produced for use in medicine, diagnostics,
security, construction or any other application where X-ray sources are currently used.
Terahertz radiation from ultra-small resonant structures can be used in many of the
known applications which now utilize x-rays, with the added advantage that the resulting
radiation can be coherent and is non-ionizing.
[0039] The use of radiation per se in each of the above applications is not new.
But, obtaining that radiation from particular kinds of increasingly small ultra-small
resonant structures revolutionizes the way electromagnetic radiation is used in electronic
and other devices. For example, the smaller the radiation emitting structure is, the less
"real estate" is required to employ it in a commercial device. Since such real estate on a
semiconductor, for example, is expensive, an ultra-small resonant structure that provides
the myriad application benefits of radiation emission without consuming excessive real
estate is valuable. Second, with the kinds of ultra-small resonant structures that we
describe, the frequency of the radiation can be high enough to produce visible light of any
color and low enough to extend into the terahertz levels (and conceivably even petahertz
or exahertz levels with additional advances). Thus, the devices may be tunable to obtain
any kind of white light transmission or any frequency or combination of frequencies
desired without changing or stacking "bulbs," or other radiation emitters (visible or
invisible).
[0040] Currently, LEDs and Solid State Lasers (SSLs) cannot be integrated onto
silicon (although much effort has been spent trying). Further, even when LEDs and SSLs
are mounted on a wafer, they produce only electromagnetic radiation at a single color.
The present devices are easily integrated onto even an existing silicon microchip and can
produce many frequencies of electromagnetic radiation at the same time.
[0041] There is thus a need for a device having a single layer basic construction
that can couple energy from an electromagnetic wave over the full terahertz portion of the
electromagnetic spectrum.
GLOSSARY [0042] As used throughout this document:
[0043] The phrase "ultra-small resonant structure" shall mean any structure of any
material, type or microscopic size that by its characteristics causes electrons to resonate at
a frequency in excess of the microwave frequency.
[0044] The term "ultra-small" within the phrase "ultra-small resonant structure"
shall mean microscopic structural dimensions and shall include so-called "micro"
structures, "nano" structures, or any other very small structures that will produce
resonance at frequencies in excess of microwave frequencies.
DESCRIPTION OF PRESENTLY PREFERRED EXAMPLES OF THE INVENTION [0045] Figure l(a) shows a prior art example klystron.
[0046] Figure l(b) shows a prior art example magnetron.
[0047] Figure l(c) shows a prior art example reflex klystron.
[0048] Figure l(d) depicts aspects of the Smith-Pufcell theory.
[CT/"USOB/ 53E! 80l
[0049] Figure 2 is schematic representation of an example embodiment of the
invention;
[0050] Figure 3 is another schematic representation of certain parameters
associated with light emission from exemplary embodiments of the present invention;
[0051] Figure 4 is a microscopic photograph of an example light-emitting comb
structure;
[0052] Figure 5 is a microscopic photograph of a series of example light-emitting
comb structures;
[0053] Figure 6 is a microscopic photograph of a series of example light-emitting
comb structures;
[0054] Figure 7 is a microscopic photograph of a side view of example series of
comb structures;
[0055] Figures 8 and 9 are closer version microscopic photographs of example
light-emitting comb structures;
[0056] Figure 10 is an example substrate pattern used for testing the effect of comb
length variations;
[0057] Figure 11 is a microscopic photograph of a side view of an example comb
structure;
[0058] Figure 12 is a microscopic photograph of a series of frequency sensitive
comb structures;
[0059] Figure 13 is a graph showing example intensity and wavelength versus
finger length for some of the series of comb teeth of Figure 10;
[0060] Figure 14 is a graph showing intensity versus post length for the series of
comb teeth of Figure 10;
[0061] Figures 15 and 16 are microscopic photographs of dual rows of comb teeth;
[0062] Figure 17 is an example substrate with example dual rows of comb teeth
and single rows of comb teeth;
[0063] Figures 18-20 are further examples of dual rows of comb teeth; and
[0064] Figures 21-24 are further examples of dual rows of C-shaped structures.
[0065] As shown in Figure 2, a single layer of metal, such as silver or other thin
metal, is produced with the desired pattern or otherwise processed to create a number of
individual resonant elements. Although sometimes referred to herein as a "layer" of
metal, the metal need not be a contiguous layer, but can be a series of elements
individually present on a substrate. The metal with the individual elements can be
produced by a variety of methods, such as by pulse plating, depositing or etching.
Preferred methods for doing so are described in co-pending U.S. Application No.
10/917,571, filed on August 13, 2004, entitled "Patterning Thin Metal Film by Dry
Reactive Ion Etching," and in co-pending U.S. Application No. 11/203,407, filed on
August 15, 2005, entitled "Method of Patterning Ultra-small Structures."
[0066] The etching does not need to remove the metal between posts all the way
down to the substrate level, nor does the plating have to place the metal posts directly on
the substrate (they can be on a silver layer on top of the substrate, for example). That is,
the posts may be etched or plated in a manner so a small layer of conductor remains
»CT/usoe/B35eo beneath, between and connecting the posts. Alternatively, the posts can be conductively
isolated from each other by removing the entire metal layer between the posts. In one
embodiment, the metal can be silver, although other metal conductors and even
dielectrics are envisioned as well.
[0067] A charged particle beam, such as an electron beam 12 produced by an
electron microscope, cathode, or any other electron source 10 and passing closely by a
series of appropriately-sized structures, causes the electrons in the structures to resonate
and produce visible light. In Figure 2, resonance occurs within the metal posts 14 and in
the spaces between the metal posts 14 on a substrate and with the passing electron beam.
The metal posts 14 include individual post members 15a, 15b,...15n. The number of post
members 15a...15n can be as few as one and as many as the available real estate permits.
We note that theoretically the present resonance effect can occur in as few as only a
single post, but from our practically laboratory experience, we have not measured
radiation from either a one post or two post structure. That is, more than two posts have
been used to create measurable radiation using current instrumentation.
[0068] The spaces between the post members 15 a, 15b, ...15n (Figure 2) create
individual cavities. The post members and/or cavities resonate when the electron beam
12 passes by them. By choosing different geometries of the posts and resonant cavities,
and the energy (velocity) of the electron beam, one can produce visible light (or non-
visible EMR) of a variety of different frequencies (for example, a variety of different
colors in the case of visible emissions) from just a single patterned metal layer.
C T/ U S O G /" iS 3 ig S O
[0069] That resonance is occurring can be seen in Figure 14. There, the average
results of a set of experiments in which the photon radiation from an example of the
present invention was plotted (in the y-axis, labeled "counts" of photons, and measured
by a photo multiplier tube as detected current pulses) versus the length of the length of
the posts 14 that are resonating (in the x-axis, labeled as "finger length"). The intensity
versus finger length average plot shows two peaks (and in some experimental results, a
third peak was perhaps, though not conclusively, present) of radiation intensity at
particular finger lengths. We conclude that certain finger lengths produce more intensity
at certain multiple lengths due to the resonance effect occurring within the post 14 itself.
[0070] For completeness, the substrate used in the above finger length resonance
tests is shown in Figure 10. There, the lines of posts in the vertical direction correspond
to posts of different length from "0" length to 700nm length. As described in more detail
below, the experiment is conducted by passing an electron beam near the rows of posts
and generally perpendicular to them (that is, the electron beam passes vertically with
respect to Figure 10). The specifications for the experiment were: a period between
posts of 156nm, a 15kV beam energy from an electron microscope at 90 degrees to the
length of the posts. In that test, a continuous conductive silver substrate layer was
beneath the posts. When we repeated the tests, we found that there was some variation in
terms of actual intensities seen by the different finger lengths, which we attribute to slight
variations in the proximity of the electron beam to the post runs, but the resonance effect
was generally apparent in each case.
■C T/ySOB / E 3ΞE*O
[0071] Notably, the resonance effect described in Figure 14 appears to occur in the
individual posts themselves. That is, it appears that we are recording an effect that occurs
from oscillations that are on the surface (including perhaps within) the posts themselves.
That resonance is supplementing system resonance, namely the resonance that occurs
between adjacent posts. Although these theories do not limit our inventions, we believe
that the supplemental resonance occurring within the posts is amplifying the system
resonance such that new, substantial levels of intensity are being recognized. As the
electron beam passes by the posts, charged particles in the posts begin to resonate
between adjacent posts. That resonance produces electromagnetic radiation-and is
predominantly responsible for the first peak in Figure 14. What we have now seen is that
we can, by choosing finger length, demonstrate further resonance within the fingers
themselves (as opposed to between adjacent fingers) that is predominantly responsible for
the second peak and is also responsible for amplifying the intensity of the system
resonance. We have seen, for example, that without system resonance, then the electron
beam cannot be made intense enough to excite the in-post resonance to a detectible level.
But, with the system resonance, both the system resonance and the in-post resonance
excite the others to further excitation.
[0072] We have also detected with angle periodic structures that running the beam
one way over the angled teeth produces an effective output while running the beam the
other way decreases the output dramatically.
[0073] We have also detected that, unlike the general theory on Smith-Purcell,
which states that frequency is only dependant on period and electron beam characteristics
(such as beam intensity), some of the frequencies of our detected beam change with the
finger length. Thus, as shown in Figure 13, the frequency of the electromagnetic wave
produced by the system on a row of 220nm fingers (posts) has a recorded intensity and
wavelength greater than at the lesser shown finger lengths. With Smith-Purcell, the
frequency is related to the period of the grating (recalling that Smith-Purcell is produced
by a diffraction grating) and beam intensity according to:
where λ is the frequency of the resonance, L is the period of the grating, n is a constant, β is related to the speed of the electron beam, and θ is the angle of diffraction of the electron. [0074] It is reasonable to suggest, that if the other modes are aligned to the
operating frequency, the Q of the device will be improved. A sweep of the duty cycle of
the space width s (shown in Figure 3) and post width (1-s) indicates that the space width s
and period length 1 have relevance to the center frequency of the resultant radiation. By
sweeping the geometries d, 1, and s of Figure 3 and the length of the posts (shown in
Figure 2 and variously at Figure 10), at given electron velocity v and current density,
while evaluating the characteristic harmonics during each sweep, one can ascertain a
predictable design model and equation set for a particular metal layer type and
construction. With such, a series of posts can be constructed that output substantial EMR
in the visible spectrum (or higher) and which can be optimized based on alterations of the
geometry, electron velocity and density, and metal type.
[0075] Using the above-described sweeps, one can also find the point of maximum
Q for given posts 14 as shown in Figure 14. Additional options also exist to widen the
F" C T/ U S O IB /Ξ! 3 iΞ 8 O bandwidth or even have multiple frequency points on a single device. Such options
include irregularly shaped posts and spacing, series arrays of non-uniform periods,
asymmetrical post orientation, multiple beam configurations, etc.
[0076] Some example geometries are described herein and are shown in the
associated figures. Those geometries do not limit the present inventions, but are
described in order to provide illustrative examples of geometries that work for the
intended purpose. In Figure 3, an example representation of our posts is shown with
dimensional variables labeled for clarity. As described above, in our devices, for
example, as the post length d was swept in length, the intensity of the radiation was
oscillatory in nature, aligning very near to the second and third harmonic lengths.
[0077] In Figure 4, a microscopic photograph depicts a set of actual single metal-
layer posts, of the kind generally referred to in Figure 3. In the Figure 4 example, the
metal layer is silver. The metal is pulse plated to provide the posts 14 shown. The posts
may be constructed according to the techniques described in the applications identified
above under "Related Applications."
[0078] In Figure 4, the post length is about 698nm. The space width, s, is about
51.5nm. The post and space width, 1, is about 155nm. The electron beam runs
perpendicular to the length of the posts and spaces, as shown in Figure 2. Unlike a
Smith-Purcell device, the resultant radiation from a structure such as shown in Figure 4 is
actually intense enough to be visible to the human eye without the use of a relativistic
electron beam. Another example set of the structures of Figure 4 in which the post length
was altered to determine the effect on harmonic lengths is shown in Figure 5. There, four
=»CT/ USOB/ia358O different example post lengths are shown, 303 nm, 349 nm, 373 run, and 396 nm. The
example of Figure 5 realizes harmonic oscillation aligning near the second and third
harmonic lengths
[0079] As described previously, by altering the combined length, period 1, spaces
s, and post members 15a...15n, the center frequency of the radiation changes. It is thus
valuable to size a row of posts 14 such that a desired frequency of visible light is emitted
when the charged particle beam is passed near it. Figure 6 illustrates an alternative
example embodiment in which we produce a variety of frequencies by modifying the post
lengths in multiple rows of differently configured posts. By etching, plating or otherwise
producing multiple rows of posts, each of which is tuned to a produce a different
frequency, multiple colors of visible light can be produced by directing an injected
charged particle beam parallel and close to appropriate ones of the rows.
[0080] Indeed, we can envision a row of posts having varying lengths within the
row itself, such that different frequencies of radiation are excited by different ones or
combinations of posts. The result could be a mixed, multiple wavelength light.
[0081] Different frequency outputs can also be obtained by directing multiple
charged particle beams at different rows of posts etched from or plated on the same metal
layer. Thus, one can obtain any color of visible light from a single layer metal nano- or
micro- structure. Because the rows are only about a few micrometers or less apart,
directing multiple electron beams simultaneously at different ones of the rows could also
mix the visible light to yield to the human eye essentially any color frequency in the
visible spectrum. The breadth and sensitivity of color options available in such a system
CT/' U SO G / ΪG* 3 E O O is limited only by the number and geometries of the rows, and the number of electron
beam sources available to stimulate the rows into resonance.
[0082] Figure 7 illustrates a side view of a set of rows of posts. As shown, each
row has a different geometry to produce a different radiation. Various period, space
distances, and depths are shown. The lengths of the posts, a dimension clearly shown in
the example of Figure 6, are not clearly identifiable in Figure 7. In Figure 7, the period
of the second row is 210nm while the period of the third row is 175nm. The space of the
first row is 123nm, while the space of the fourth row is 57nm. Depths and lengths can
also be varied. Each of the rows can exhibit different post geometries (although there
may be reasons for including some or all rows of duplicate geometries).
[0083] As shown in Figure 6, the post elements 14 do not necessarily have to have
the backbone portion connecting the posts, as shown in Figure 4. The posts on the
substrate can resemble a comb with a backbone connecting all of the teeth, as in Figure 4,
or can resemble be just the teeth without the comb backbone, as in Figure 6. Each post
can also be freestanding and physically unconnected to adjacent posts except by the
portion of metal layer remaining beneath the posts or by the substrate if the metal layer is
completely removed from around the posts. Alternatively, the posts can be connected by
remaining metal layer in the form of the backbone shown in Figure 3 or by a top layer
shown in Figure 11, or by a connecting conductive substrate beneath the posts. In Figure
11, the posts have period length 1 of 213 nm, a post width (I - s) of 67.6 nm and a height
(d) of 184 nm. The posts are covered by a layer of silver, which can provide
advantageous — though not necessary — coupling between the posts (such coupling can
also or alternatively be provided by contiguous metal layer left beneath the posts).
[0084] Figures 8 and 9 illustrate still further example geometries of non-backboned
posts 14 are shown. In each case, just two rows are shown, although any number of rows
can be employed, from one to any. The number of rows is limited by available real estate
on the substrate, except that multiple substrates can also be employed proximate (side-by-
side or atop) each other. The specific dimensions shown in Figures 8 and 9, like the other
examples described herein are just illustrative and not limiting. Sizes and geometries of
the posts, numbers of the posts, sequences of the posts, and arrangements of the posts can
also be changed and remain within the concepts of the present inventions.
[0085] When the backbone is removed, for certain wavelengths, radiation can emit
from both sides of the device. Depending on the spacing and the XY-dimensions of the
post members, it may be possible that there is a blocking mode that negates the photon
emission from that side. The emissions are thus altered by the presence/absence of the
backbone, but the existence of resonance remains.
[0086] The direction of the radiation can also be adjusted. We have noted that
radiation has been detected outwardly from the row (essentially parallel to the long
dimension of the posts and spaces), as well as upwardly (relative, for example, to the
plane of Figure 6). It thus appears that some directionality can be advantageously
employed for the radiation's initial direction.
[0087] Given that plasmon velocity is material dependent, it can be advantageous
to build devices using conductive materials other than silver. We expect that less
conductive materials would have a lower emission wavelength due to the slower plasmon
velocity. Similarly, more conductive material would have higher emission wavelengths.
Thus, metal or other conductive layers of different types can be employed. As described
above, we envision single metal or alloy layers of different row geometries producing
different frequencies. We also envision different metal layer types with the same or
different row geometries to produce different frequencies.
[0088] Figure 12 illustrates anther set of post rows (similar to Figure 10). The
rows in Figure 12 have no backbones on the posts. As can be seen, the different rows are
formed of a common metal layer and have different lengths so as to produce different
frequencies and intensities of radiation when a charge particle beam passes close to (and
generally parallel to) a selected row.
[0089] Figures 15-17 are still further example configurations of the rows of posts
14. In Figures 15 and 16, two rows are provided in proximity, so an electron beam 12
can be passed between the two rows, exciting resonance in each row simultaneously.
Each row can have posts of the same geometry or each row can have posts of different
geometries. Further, as between the two rows, the geometries of the posts can be entirely
the same, some different, or entirely different. If the rows have uniform posts within the
row and different posts as between the two rows, then the different rows produce
different wavelengths of radiation from a common electron beam.
[0090] With the two row embodiments of Figures 15-16, detectable light output
was increased at least 20% (the increase is likely much more than 20% due to the
inability to detect light going in undetected directions from the two rows.
»C T/ U S O B / E BB 80
[0091] Figure 17 is a substrate with some two row embodiments, as in Figures 15
and.16, with other single row and multiple row example embodiments. In Figure 17, the
dual row embodiments on the left side produced light of two different colors. Figures 18-
20 show some additional details of the dual row embodiments. It is worth noting that
simultaneous dual frequency outputs from two rows, like those shown in Figure 18-20,
are not realized with devices operating according to diffraction theory, such as Smith-
Purcell devices.
[0092] As should be understood from these descriptions, there is a wide variety of
geometries of posts, geometries of rows, orientations of posts and rows, kinds of posts,
kinds of metal, kinds of substrates, backbones, electron beam characteristics and other
criteria that we envision within the framework of our inventions. We envision within our
inventions deviations from the above criteria, whether or not specifically described
herein. For example, Figures 21-24 show still further example resonant structures by
which an electron beam can pass to induce resonance in and between. In Figure 21, the
structures are not in the form of straight posts (as in Figure 1), but are instead C-shaped
cavities which can form a type of waveguide. The electron beam passes down the middle
of the facing Cs, perpendicular to the arms of the Cs. As in Figure 1, the electron beam
induces resonance in the structures, both within the structures (including surface
resonance) and among the structures (system resonance) to produce electromagnetic
radiation at superior intensities and optimizable wavelengths.
[0093] Figure 21 also illustrates a device that exhibits higher order of harmonics
by alternating "half-stubs" between the full stubs. The same kind of idea in which half-
::;"C T / U S O B / E!! 3 Ξ Θ O stubs are alternated with full stubs can be incorporated into any of the other embodiments
(such as the several post embodiments) described earlier in this document. In the case of
Figure 21, the half-stubs are actually half-Cs nestled into the full-Cs, with the electron
beam passing near and perpendicular to the arms of each. Resonance occurs within each
C, between the nestled and nestling Cs, and between adjacent large Cs. As in previously
described embodiments, the period of the repeating Cs is less than the wavelength of
light, so the light is not being diffracted because the period spacing is so small that the
arms of the Cs (or in the case of the posts, the ends of the posts) appear essentially as a
solid "surface" to the wave. In the case of Figure 21, the period of the respective arms of
the Cs is 117nm. The distance from the end of one arm of a big-C to the other arm of the
same big-C is about 797nm (i.e., it can be greater than the wavelength of light) The
length of each big-C arm is about 515nm.
[0094] Figure 22 illustrates a double rowed, single-C embodiment in which offset,
facing Cs are provided with the electron beam running between them. As shown, the
period of the repeating arms is about 427nm. The space within which the electron beam
runs is about 40nm. The width of the C is about 122nm. The entire length of two facing
Cs and the space between is 802nm.
[0095] Figure 23 illustrates a number of example light-producing embodiments,
including nestled-C embodiments and post embodiments. Figure 24 is a hybrid of the Cs
and posts, in which a post is nestled into each C. The posts and C-arms have a period of
about 225nm, with a spacing between the arms of adjacent Cs of about 83nm. Again, the
electron runs down the middle slit to induce resonance in the proximate posts and ends of
the C-arms.
[0096] All of the structures described operate under vacuum conditions. Our
invention does not require any particular kind of evacuation structure. Many known
hermetic sealing techniques can be employed to ensure the vacuum condition remains
during a reasonable lifespan of operation. We anticipate that the devices can be operated
in a pressure up to atmospheric pressure if the mean free path of the electrons is longer
than the device length at the operating pressure.
[0097] The conductive structures described herein are preferably comprised of
silver, but may be any conductive metal or may be any non-metallic conductor such as an
ionic conductor. Dielectrics are also envisioned as layer materials in the alternative to
conductive layers, or in combination with them.
[0098] We have thus described electron beam induced resonance that can be used
to produce visible light of optimized frequencies from a single metal layer. Such devices
have application in such fields as ultra high-speed data communications and in any light
producing application.
[0099] The various devices and their components described herein may be
manufactured using the methods and systems described in related U.S. Patent Application
No. 10/917,511, filed on August 13, 2004, entitled "Patterning Thin Metal Film by Dry
Reactive Ion Etching," and U.S. Application No. 11/203,407, filed on August 15, 2005,
entitled "Method Of Patterning Ultra-Small Structures," both of which are commonly
owned with the present application at the time of filing, and the entire contents of each of
have been incorporated herein by reference.
[00100] Thus are described electron beam induced resonance and methods and
devices for making and using same. While the invention has been described in
connection with what is presently considered to be the most practical and preferred
embodiment, it is to be understood that the invention is not to be limited to the disclosed
embodiment, but on the contrary, is intended to cover various modifications and
equivalent arrangements included within the spirit and scope of the appended claims.
Claims
1. A series of one or more structures arranged in a continuum on a single
substrate to emit electromagnetic radiation at a output wavelength, the series having a
period between the structures less than the wavelength of the emitted electromagnetic
radiation, the series emitting said electromagnetic radiation when a charged particle beam
is directed generally along and proximate the series of structures.
2. A series according to claim 1, wherein the structures have a length to
induce resonance on the surface of, or within, the structures as the charged particle beam
passes the structures to emit said electromagnetic radiation.
3. A series according to claim 2, wherein the structures have a length to
induce resonance among the respective structures as the charged particle beam passes the
structures to emit said electromagnetic radiation.
4. A series of structures according to claim 1, wherein the series is a first
series, and further including:
a second series of structures geometrically different from the first series and
5. A series of structures according to claim 1, wherein the series is a first
series, and further including:
a plurality of series of one or more structures geometrically different from the first
series and arranged on a common substrate in respective and different continuums to emit
electromagnetic radiation at one or more different frequencies than the first series when
said charged particle beam is directed generally along and proximate the plurality any of
the series of structures.
6. A series according to claim 5, wherein each one of the plurality of
additional series of structures is geometrically different from every other series of one or
more structures.
7. A series according to claim 6, wherein each of the plurality of additional
series of one or more structures emits electromagnetic radiation at a frequency different
from every other series of one or more structures.
8. A series according to claim 1, wherein the structures are posts.
. ,
,,,u r .,.„„. ,, „
9...... J..,..p;.A,se|ieβ-§<jCiQ-jding to claim 1, wherein the structures are arms of C-shaped
structures.
10. A series according to claim I5 wherein the structures are arms of nested C-
shaped structures.
11. A series according to claim 1, wherein the structures are arms of C-shaped
structures and nested posts.
12. Periodic structures arranged in rows on a single substrate and having at
least two different structure geometries inducing electromagnetic radiation in at least two
different frequencies corresponding at least in part to the two different structure
geometries when a charged particle beam is directed generally along the structures.
13. Periodic structures according to claim 12, wherein two of the rows having
the at least two different structure geometries are proximate to one another such that a
common charged particle beam simultaneously induces the electromagnetic radiation
from both rows.
14. Periodic structures according to claim 13, wherein the structures are offset,
facing C-shaped structures. P if T ■'■'" IM ' il B^WH^W^^^ according t0 claim H wherein the C-shaped structures are nested.
16. Periodic structures according to claim 12, wherein the electromagnetic
radiation is in the visible light spectrum.
17. Periodic structures according to claim 12, wherein a periodicity of each of
the periodic structures is less than the wavelength of the electromagnetic radiation
induced thereby.
18. Periodic structures according to claim 12, wherein the structures are posts
arranged on a substrate.
19. Periodic structures according to claim 12, wherein the structures in a given
row are conductively connected to one another.
20. Periodic structures according to claim 12, wherein the structures are
composed of one from the group of: metals, alloys, non-metallic conductors and
dielectrics.
21. A method of producing electromagnetic radiation, comprising the steps of: p jj J- / ij ptffiβφig gsjtøfp@iodic structures on a substrate, the set of structures having an
arm length in a direction generally parallel to the plane of the substrate;
directing a beam of charged particles near and perpendicular to the arm length of
said structures so as to induce resonance in the structures and thereby emit
electromagnetic radiation at a particular wavelength greater than a period of said periodic
structures.
22. A series according to claim 1, wherein the structures are composed of one
from the group of: metals, alloys, non-metallic conductors and dielectrics.
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US11/238,991 US7791290B2 (en) | 2005-09-30 | 2005-09-30 | Ultra-small resonating charged particle beam modulator |
US11/243,477 | 2005-10-05 | ||
US11/243,477 US7626179B2 (en) | 2005-09-30 | 2005-10-05 | Electron beam induced resonance |
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US20070075907A1 (en) | 2007-04-05 |
US20060216940A1 (en) | 2006-09-28 |
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US7758739B2 (en) | 2010-07-20 |
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