WO2007041089A3 - Organometallic compounds and methods of use thereof - Google Patents

Organometallic compounds and methods of use thereof Download PDF

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Publication number
WO2007041089A3
WO2007041089A3 PCT/US2006/037414 US2006037414W WO2007041089A3 WO 2007041089 A3 WO2007041089 A3 WO 2007041089A3 US 2006037414 W US2006037414 W US 2006037414W WO 2007041089 A3 WO2007041089 A3 WO 2007041089A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
precursor compounds
organometallic precursor
layer
methods
Prior art date
Application number
PCT/US2006/037414
Other languages
French (fr)
Other versions
WO2007041089A2 (en
Inventor
David W Peters
David M Thompson
Original Assignee
Praxair Technology Inc
David W Peters
David M Thompson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/501,075 external-priority patent/US7547796B2/en
Application filed by Praxair Technology Inc, David W Peters, David M Thompson filed Critical Praxair Technology Inc
Priority to EP06804151A priority Critical patent/EP1954704A2/en
Priority to JP2008533510A priority patent/JP2009510074A/en
Publication of WO2007041089A2 publication Critical patent/WO2007041089A2/en
Publication of WO2007041089A3 publication Critical patent/WO2007041089A3/en
Priority to IL190226A priority patent/IL190226A/en

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L41/00—Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
    • H04L41/50—Network service management, e.g. ensuring proper service fulfilment according to agreements
    • H04L41/508—Network service management, e.g. ensuring proper service fulfilment according to agreements based on type of value added network service under agreement
    • H04L41/5096—Network service management, e.g. ensuring proper service fulfilment according to agreements based on type of value added network service under agreement wherein the managed service relates to distributed or central networked applications
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L41/00—Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
    • H04L41/50—Network service management, e.g. ensuring proper service fulfilment according to agreements
    • H04L41/5003—Managing SLA; Interaction between SLA and QoS
    • H04L41/5009—Determining service level performance parameters or violations of service level contracts, e.g. violations of agreed response time or mean time between failures [MTBF]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L41/00—Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
    • H04L41/50—Network service management, e.g. ensuring proper service fulfilment according to agreements
    • H04L41/5061—Network service management, e.g. ensuring proper service fulfilment according to agreements characterised by the interaction between service providers and their network customers, e.g. customer relationship management
    • H04L41/507—Filtering out customers affected by service problems
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L67/00—Network arrangements or protocols for supporting network services or applications
    • H04L67/50—Network services
    • H04L67/535—Tracking the activity of the user
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L69/00—Network arrangements, protocols or services independent of the application payload and not provided for in the other groups of this subclass
    • H04L69/30—Definitions, standards or architectural aspects of layered protocol stacks
    • H04L69/32—Architecture of open systems interconnection [OSI] 7-layer type protocol stacks, e.g. the interfaces between the data link level and the physical level
    • H04L69/322—Intralayer communication protocols among peer entities or protocol data unit [PDU] definitions
    • H04L69/329—Intralayer communication protocols among peer entities or protocol data unit [PDU] definitions in the application layer [OSI layer 7]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L41/00—Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks
    • H04L41/50—Network service management, e.g. ensuring proper service fulfilment according to agreements
    • H04L41/5032—Generating service level reports

Abstract

This invention relates to organometallic precursor compounds represented by the formula (Cp(R')x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
PCT/US2006/037414 2005-09-29 2006-09-26 Organometallic compounds and methods of use thereof WO2007041089A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06804151A EP1954704A2 (en) 2005-09-29 2006-09-26 Organometallic compounds and methods of use thereof
JP2008533510A JP2009510074A (en) 2005-09-29 2006-09-26 Organometallic compounds and methods of use thereof
IL190226A IL190226A (en) 2005-09-29 2008-03-17 Organometallic compounds

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US72180805P 2005-09-29 2005-09-29
US60/721,808 2005-09-29
US11/501,075 US7547796B2 (en) 2005-09-29 2006-08-09 Organometallic compounds, processes for the preparation thereof and methods of use thereof
US11/501,075 2006-08-09

Publications (2)

Publication Number Publication Date
WO2007041089A2 WO2007041089A2 (en) 2007-04-12
WO2007041089A3 true WO2007041089A3 (en) 2007-06-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/037414 WO2007041089A2 (en) 2005-09-29 2006-09-26 Organometallic compounds and methods of use thereof

Country Status (3)

Country Link
JP (1) JP2009510074A (en)
MY (1) MY158548A (en)
WO (1) WO2007041089A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9127351B2 (en) 2005-10-27 2015-09-08 Asm International N.V. Enhanced thin film deposition
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153831B2 (en) * 2006-09-28 2012-04-10 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
KR102216575B1 (en) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. Titanium aluminum and tantalum aluminum thin films
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (en) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. Formation of SiOC thin films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
JP7249952B2 (en) 2017-05-05 2023-03-31 エーエスエム アイピー ホールディング ビー．ブイ． Plasma-enhanced deposition process for controlled formation of oxygen-containing thin films
KR20200007823A (en) 2017-05-16 2020-01-22 에이에스엠 아이피 홀딩 비.브이. Selective PEALD of Oxide on Dielectric
KR20190065962A (en) 2017-12-04 2019-06-12 에이에스엠 아이피 홀딩 비.브이. UNIFORM DEPOSITION OF SiOC ON DIELECTRIC AND METAL SURFACES

Citations (6)

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Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
JPH05209272A (en) * 1991-12-20 1993-08-20 Nec Corp Method for growing tungsten film
WO2003050323A1 (en) * 2001-12-07 2003-06-19 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
WO2004095557A1 (en) * 2003-01-27 2004-11-04 Tokyo Electron Limited Semiconductor device
JP2005069726A (en) * 2003-08-28 2005-03-17 Mitsubishi Materials Corp Method for evaluating organometal compound
US20060121307A1 (en) * 2004-10-22 2006-06-08 Tokyo Electron Limited Film deposition method

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JP2006148089A (en) * 2004-10-22 2006-06-08 Tokyo Electron Ltd Deposition method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
JPH05209272A (en) * 1991-12-20 1993-08-20 Nec Corp Method for growing tungsten film
WO2003050323A1 (en) * 2001-12-07 2003-06-19 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
WO2004095557A1 (en) * 2003-01-27 2004-11-04 Tokyo Electron Limited Semiconductor device
JP2005069726A (en) * 2003-08-28 2005-03-17 Mitsubishi Materials Corp Method for evaluating organometal compound
US20060121307A1 (en) * 2004-10-22 2006-06-08 Tokyo Electron Limited Film deposition method

Non-Patent Citations (7)

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Title
CAMANYES, SANTIAGO ET AL: "Theoretical Study of the Hydrogen Exchange Coupling in the Metallocene Trihydride Complexes [(C5H5)2MH3]n+ (M = Mo, W, n = 1; M = Nb, Ta, n = 0)", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY , 118(19), 4617-21 CODEN: JACSAT; ISSN: 0002-7863, 1996, XP002427863 *
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; TSUNENARI, KINJI: "Chemical vapor phase growth of tungsten film", XP002427868, retrieved from STN Database accession no. 120:20202 *
GIRLING, REUBEN B. ET AL: "Vibrational spectra of terminal metal hydrides: solution and matrix-isolation studies of [(.eta.-C5H5)2MHn]x+ (M = Re, Mo, W, Nb, Ta; n = 1-3; x = 0, 1)", INORGANIC CHEMISTRY , 25(1), 31-6 CODEN: INOCAJ; ISSN: 0020-1669, 1986, XP002427864 *
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LOKSHIN, B. V. ET AL: "Spectroscopy of unstable complexes of organometallic compounds with small molecules at low temperatures", JOURNAL OF MOLECULAR STRUCTURE , 222(1-2), 11-20 CODEN: JMOSB4; ISSN: 0022-2860, 1990, XP002427865 *
SCHROCK, R.R. ET AL.: "Multiple Metal-Carbon bonds. 7. Preparation and characterization of Ta (eta5-C5H5)2(CH2)(CH3), a Study of its Decomposition, and some simple Reactions", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 100, no. 8, 1978, pages 2389 - 2399, XP002427862 *
SPEE, C. I. M. A. ET AL: "Tungsten deposition by organometallic chemical vapor deposition with organotungsten precursors", MATERIALS SCIENCE & ENGINEERING, B: SOLID-STATE MATERIALS FOR ADVANCED TECHNOLOGY , B17(1-3), 108-11 CODEN: MSBTEK; ISSN: 0921-5107, 1993, XP002427866 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9127351B2 (en) 2005-10-27 2015-09-08 Asm International N.V. Enhanced thin film deposition
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9111749B2 (en) 2013-03-14 2015-08-18 Asm Ip Holdings B.V. Silane or borane treatment of metal thin films
US9236247B2 (en) 2013-03-14 2016-01-12 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9583348B2 (en) 2013-03-14 2017-02-28 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films

Also Published As

Publication number Publication date
JP2009510074A (en) 2009-03-12
MY158548A (en) 2016-10-14
WO2007041089A2 (en) 2007-04-12

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