WO2007047055A3 - Reaction chamber with opposing pockets for gas injection and exhaust - Google Patents

Reaction chamber with opposing pockets for gas injection and exhaust Download PDF

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Publication number
WO2007047055A3
WO2007047055A3 PCT/US2006/037818 US2006037818W WO2007047055A3 WO 2007047055 A3 WO2007047055 A3 WO 2007047055A3 US 2006037818 W US2006037818 W US 2006037818W WO 2007047055 A3 WO2007047055 A3 WO 2007047055A3
Authority
WO
WIPO (PCT)
Prior art keywords
exhaust
reaction chamber
gas injection
quartz chamber
opposing pockets
Prior art date
Application number
PCT/US2006/037818
Other languages
French (fr)
Other versions
WO2007047055A2 (en
Inventor
Joseph Yudovsky
Robert C Cook
Yeong K Kim
Alexander Tam
Maitreyee Mahajani
Adam A Brailove
Steve G Ghanayem
Original Assignee
Applied Materials Inc
Joseph Yudovsky
Robert C Cook
Yeong K Kim
Alexander Tam
Maitreyee Mahajani
Adam A Brailove
Steve G Ghanayem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Joseph Yudovsky, Robert C Cook, Yeong K Kim, Alexander Tam, Maitreyee Mahajani, Adam A Brailove, Steve G Ghanayem filed Critical Applied Materials Inc
Publication of WO2007047055A2 publication Critical patent/WO2007047055A2/en
Publication of WO2007047055A3 publication Critical patent/WO2007047055A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Abstract

The present invention generally provides a batch processing chamber having a quartz chamber, at least one heater block, an inject assembly coupled to one side of the quartz chamber, and an exhaust assembly coupled to an opposite side of the quartz chamber. In one embodiment, the inject assembly is independently temperature controlled. In another embodiment, at least one temperature sensor is disposed outside the quartz chamber.
PCT/US2006/037818 2005-10-13 2006-09-27 Reaction chamber with opposing pockets for gas injection and exhaust WO2007047055A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/249,555 US20070084406A1 (en) 2005-10-13 2005-10-13 Reaction chamber with opposing pockets for gas injection and exhaust
US11/249,555 2005-10-13

Publications (2)

Publication Number Publication Date
WO2007047055A2 WO2007047055A2 (en) 2007-04-26
WO2007047055A3 true WO2007047055A3 (en) 2007-10-25

Family

ID=37946990

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/037818 WO2007047055A2 (en) 2005-10-13 2006-09-27 Reaction chamber with opposing pockets for gas injection and exhaust

Country Status (5)

Country Link
US (1) US20070084406A1 (en)
KR (1) KR100993028B1 (en)
CN (1) CN1949458B (en)
TW (1) TW200745382A (en)
WO (1) WO2007047055A2 (en)

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US20090004405A1 (en) * 2007-06-29 2009-01-01 Applied Materials, Inc. Thermal Batch Reactor with Removable Susceptors
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US7921803B2 (en) * 2007-09-21 2011-04-12 Applied Materials, Inc. Chamber components with increased pyrometry visibility
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JP5226082B2 (en) 2007-12-20 2013-07-03 アプライド マテリアルズ インコーポレイテッド Thermal reactor with improved gas flow distribution
FR2930561B1 (en) * 2008-04-28 2011-01-14 Altatech Semiconductor DEVICE AND METHOD FOR CHEMICAL TREATMENT IN STEAM PHASE.
US20100117309A1 (en) 2008-11-13 2010-05-13 Applied Materials, Inc. Sealing apparatus for a process chamber
JP5730496B2 (en) * 2009-05-01 2015-06-10 株式会社日立国際電気 Heat treatment apparatus, semiconductor device manufacturing method, and substrate processing method
US8950470B2 (en) * 2010-12-30 2015-02-10 Poole Ventura, Inc. Thermal diffusion chamber control device and method
JP2012195565A (en) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc Substrate processing apparatus, substrate processing method, and manufacturing method of semiconductor device
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TW201246297A (en) * 2011-04-07 2012-11-16 Veeco Instr Inc Metal-organic vapor phase epitaxy system and process
CN103160799A (en) * 2011-12-19 2013-06-19 同方威视技术股份有限公司 Neutron-sensitive coating film and forming method thereof
CN102680464A (en) * 2012-05-21 2012-09-19 力合科技（湖南）股份有限公司 Reaction detecting device
US9493874B2 (en) * 2012-11-15 2016-11-15 Cypress Semiconductor Corporation Distribution of gas over a semiconductor wafer in batch processing
KR102106969B1 (en) * 2013-02-26 2020-05-08 삼성디스플레이 주식회사 Apparatus and methods for heat-treating substrate
TWI470105B (en) * 2013-06-03 2015-01-21 Adpv Technology Ltd Gas Reaction Continuous Cavity and Gas Reaction
CN103646902A (en) * 2013-11-26 2014-03-19 上海华力微电子有限公司 Gas injection tube for optimizing semiconductor processing conditions
KR102162366B1 (en) * 2014-01-21 2020-10-06 우범제 Apparatus for removing fume
KR102381816B1 (en) * 2014-02-14 2022-04-04 어플라이드 머티어리얼스, 인코포레이티드 Upper dome with injection assembly
US10752991B2 (en) 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
JP6856576B2 (en) 2018-05-25 2021-04-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing equipment, semiconductor equipment manufacturing methods and programs
CN110767569A (en) * 2018-07-26 2020-02-07 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor heat treatment equipment
CN108854332B (en) * 2018-08-24 2023-12-05 重庆市荣冠科技有限公司 Temperature conduction device and gas filtering device
FI129577B (en) * 2019-06-28 2022-05-13 Beneq Oy An atomic layer deposition apparatus
JP7438399B2 (en) * 2020-08-03 2024-02-26 アプライド マテリアルズ インコーポレイテッド batch heat treatment chamber
KR20220156911A (en) * 2020-08-03 2022-11-28 어플라이드 머티어리얼스, 인코포레이티드 Wafer Edge Temperature Calibration in Batch Thermal Process Chambers
KR102444786B1 (en) * 2021-12-23 2022-09-19 주식회사 에이치피에스피 High Pressure Chamber to Improve Cooling Efficiency

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Also Published As

Publication number Publication date
CN1949458A (en) 2007-04-18
CN1949458B (en) 2011-08-24
US20070084406A1 (en) 2007-04-19
WO2007047055A2 (en) 2007-04-26
KR100993028B1 (en) 2010-11-08
TW200745382A (en) 2007-12-16
KR20080068701A (en) 2008-07-23

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